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Samsung 870 EVO 250 GB (V-NAND V6 256Gb)

250 GB
Capacity
Samsung MKX Metis
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Back
Back
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 870 EVO is a solid-state drive in the 2.5" form factor, launched on January 20th, 2021. It is only available in the 250 GB capacity listed on this page. With the rest of the system, the Samsung 870 EVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MKX (Metis S4LR059) from Samsung, a DRAM cache chip is available. Samsung has installed 128-layer TLC NAND flash on the 870 EVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 12 GB, once it is full, writes complete at 300 MB/s. The 870 EVO is rated for sequential read speeds of up to 560 MB/s and 530 MB/s write; random IOPS reach up to 98K for reads and 88K for writes.
At its launch, the SSD was priced at 40 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 150 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 250 GB
Overprovisioning: 23.2 GB / 10.0 %
Production: Active
Released: Jan 20th, 2021
Price at Launch: 40 USD
Part Number: MZ-77E250
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.03 W (Idle)
2.2 W (Avg)
3.5 W (Max)

Controller

Manufacturer: Samsung
Name: MKX (Metis S4LR059)
Architecture: ARM 32-bit Cortex-R4
Core Count: Triple-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Type: TLC
Technology: 128-layer
Speed: 800 MT/s .. 1200 MT/s
Capacity: 1 chip @ 2 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 400 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 84 MB/s
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: Samsung
Capacity: 512 MB
(1x 512 MB)

Performance

Sequential Read: 560 MB/s
Sequential Write: 530 MB/s
Random Read: 98,000 IOPS
Random Write: 88,000 IOPS
Endurance: 150 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 12 GB
(9 GB Dynamic
+ 3 GB Static)
Speed when Cache Exhausted: approx. 300 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Notes

Drive:

Each Die has 2 Planes with 2 sub-planes with 8KB pages.

NAND Die:

This die, in theory should have half the block count per each plane

Nov 20th, 2024 10:24 EST change timezone

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