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Samsung 9100 Pro 1 TB

1 TB
Capacity
Samsung Presto
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor
The Samsung 9100 Pro is a solid-state drive in the M.2 2280 form factor, launched on February 25th, 2025. It is available in capacities ranging from 1 TB to 8 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung 9100 Pro interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the Presto (S4LY027) from Samsung, a DRAM cache chip is available. Samsung has installed 236-layer TLC NAND flash on the 9100 Pro, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 114 GB. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The 9100 Pro is rated for sequential read speeds of up to 14,700 MB/s and 13,300 MB/s write; random IO reaches 1850K IOPS for read and 2600K for writes.
At its launch, the SSD was priced at 173 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB 4 TB 8 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Feb 25th, 2025
Price at Launch: 173 USD
Part Number: MZ-VAP1T0
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown

Controller

Manufacturer: Samsung
Name:
Presto (S4LY027)
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Architecture: ARM 32-bit Cortex-R8
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 5 nm
Flash Channels: 8 @ 2,400 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V8
Type: TLC
Technology: 236-layer
Speed: 2400 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 89 mm²
(11.5 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Read Time (tR): 40 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 4.0 ms
Die Read Speed: 1600 MB/s
Die Write Speed: 164 MB/s
Page Size: 16 KB

DRAM Cache

Type: LPDDR4X
Name: Samsung
Capacity: 1024 MB
(1x 1024 MB)

Performance

Sequential Read: 14,700 MB/s
Sequential Write: 13,300 MB/s
Random Read: 1,850,000 IOPS
Random Write: 2,600,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 114 GB
(108 GB Dynamic
+ 6 GB Static)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

NAND Die:

Samsung lists the die as able to do 184 MB/s with an average of 347 µs tPROG, but it does manage to deliver 164 MB/s.
Also states an average of 1640 MB/s read speeds per each die.

Mar 19th, 2025 15:54 EDT change timezone

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