Report an Error

SanDisk X400 512 GB

512 GB
Capacity
88SS1074
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
PCB Front
The SSD Review
PCB Front
PCB Back
The SSD Review
PCB Back
DRAM
The SSD Review
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The SanDisk X400 was a solid-state drive in the 2.5" form factor, launched on January 5th, 2016, that is no longer in production. It was available in capacities ranging from 512 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the SanDisk X400 interfaces using a SATA 6 Gbps connection. The SSD controller is the 88SS1074 Dean from Marvell, a DRAM cache chip is available. SanDisk has installed 64-layer TLC NAND flash on the X400, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly, once it is full, writes complete at 258 MB/s. The X400 is rated for sequential read speeds of up to 540 MB/s and 520 MB/s write; random IO reaches 93K IOPS for read and 75K for writes.
At its launch, the SSD was priced at 125 USD. The warranty length is set to five years, which is an excellent warranty period. SanDisk guarantees an endurance rating of 160 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: End-of-life
Released: Jan 5th, 2016
Price at Launch: 125 USD
Part Number: SD8SB8U-512G
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.07 W (Idle)
2.9 W (Avg)
4.0 W (Max)

Controller

Manufacturer: Marvell
Name: 88SS1074 Dean
Architecture: ARM 32-bit ARM9/ARMv5
Core Count: Dual-Core
Frequency: 400 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS3
Rebranded: 05479 128G (Rebranded by SanDisk)
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 4 chips @ 1 Tbit
ONFI: 3.2
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 1478 Blocks

DRAM Cache

Type: DDR3L-1866 CL13
Name: Micron MT41K256M16LY-107:N (D9SDD)
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 540 MB/s
Sequential Write: 520 MB/s
Random Read: 93,500 IOPS
Random Write: 75,000 IOPS
Endurance: 160 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: Yes
Speed when Cache Exhausted: approx. 258 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)

Jun 3rd, 2024 06:52 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts