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Seagate FireCuda 530 4 TB

4 TB
Capacity
Phison E18
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Seagate FireCuda 530 is a solid-state drive in the M.2 2280 form factor, launched in 2020. It is available in capacities ranging from 500 GB to 4 TB. This page reports specifications for the 4 TB variant. With the rest of the system, the Seagate FireCuda 530 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5018-E18-41 from Phison, a DRAM cache chip is available. Seagate has installed 176-layer TLC NAND flash on the FireCuda 530, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 440 GB, once it is full, writes complete at 4000 MB/s. Copying data out of the SLC cache (folding) completes at 1625 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The FireCuda 530 is rated for sequential read speeds of up to 7,300 MB/s and 6,900 MB/s write; random IOPS reach up to 1000K for reads and 1000K for writes.
At its launch, the SSD was priced at 950 USD. The warranty length is set to five years, which is an excellent warranty period. Seagate guarantees an endurance rating of 5100 TBW, a good value.

Solid-State-Drive

Capacity: 4 TB (4000 GB)
Variants: 500 GB 1 TB 2 TB 4 TB
Overprovisioning: 370.7 GB / 10.0 %
Production: Active
Released: 2020
Price at Launch: 950 USD
Part Number: ZP4000GM30013
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.80 W (Idle)
5.0 W (Avg)
8.7 W (Max)

Controller

Manufacturer: Phison
Name: PS5018-E18-41
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: 8 chips @ 4 Tbit
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: DDR4-2666
Name: SK Hynix H5AN8G6NCJR
Capacity: Unknown
Organization: x16

Performance

Sequential Read: 7,300 MB/s
Sequential Write: 6,900 MB/s
Random Read: 1,000,000 IOPS
Random Write: 1,000,000 IOPS
Endurance: 5100 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.7
SLC Write Cache: approx. 440 GB
(dynamic only)
Speed when Cache Exhausted: approx. 4000 MB/s
Cache Folding Speed: 1625 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

3 main cores using Cortex-R5 clocked at 1000 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. (200 - 300 MHz)

NAND Die:

Endurance in pSLC Mode: 40.000 ~ 60.000 P.E.C.
This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)
Nov 15th, 2024 12:13 EST change timezone

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