Capacity: | 500 GB |
---|---|
Variants: | 500 GB 1 TB 2 TB |
Overprovisioning: | 46.3 GB / 10.0 % |
Production: | Active |
Released: | Nov 21st, 2024 |
Part Number: | WDS500G4X0E |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
---|---|
Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 1.4 |
Power Draw: | Unknown |
Manufacturer: | WD |
---|---|
Name: | Polaris 3 A101-000103-A1 |
Architecture: | ARM Cortex-R |
Process: | 16 nm |
Flash Channels: | 4 @ 2,400 MT/s |
Chip Enables: | 4 |
Controller Features: |
HMB
(enabled)
|
Manufacturer: | Kioxia |
---|---|
Name: | BiCS6 |
Type: | TLC |
Technology: | 162-layer |
Speed: | 2400 MT/s |
Capacity: | 2 chips @ 2 Tbit |
Topology: | Charge Trap |
Die Size: | 49 mm² (10.4 Gbit/mm²) |
Dies per Chip: | 4 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
170 per NAND String
95.3% Vertical Efficiency |
Read Time (tR): | 65 µs |
Endurance: (up to) |
3000 P/E Cycles |
Page Size: | 16 KB |
Block Size: | 2430 Pages |
Plane Size: | 432 Blocks |
Type: | None |
---|---|
Host-Memory-Buffer (HMB): | 64 MB |
Sequential Read: | 6,800 MB/s |
---|---|
Sequential Write: | 5,800 MB/s |
Random Read: | 760,000 IOPS |
Random Write: | 1,200,000 IOPS |
Endurance: | 300 TBW |
Warranty: | 5 Years |
Drive Writes Per Day (DWPD): | 0.3 |
SLC Write Cache: | Yes |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
NAND Die:Lower Deck: 81 - Strings |