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Western Digital SN7100 1 TB

1 TB
Capacity
Polaris 3
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Western Digital SN7100 is a solid-state drive in the M.2 2280 form factor, launched on November 21st, 2024. It is available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Western Digital SN7100 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Polaris 3 A101-000172-A1 from WD, a DRAM cache is not available. Western Digital has installed 218-layer TLC NAND flash on the SN7100, the flash chips are made by Kioxia. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The SN7100 is rated for sequential read speeds of up to 7,250 MB/s and 6,900 MB/s write; random IOPS reach up to 1000K for reads and 1400K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Nov 21st, 2024
Part Number: WDS100T4X0E
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: WD
Name: Polaris 3 A101-000172-A1
Architecture: ARM Cortex-R
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 4 @ 2,400 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Kioxia
Name: BiCS8
Type: TLC
Technology: 218-layer
Speed: 3600 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 5.1
Topology: Charge Trap
Die Size: 60 mm²
(17.1 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 241 per NAND String
90.5% Vertical Efficiency
Read Time (tR): 40 µs
Die Write Speed: 205 MB/s
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 7,250 MB/s
Sequential Write: 6,900 MB/s
Random Read: 1,000,000 IOPS
Random Write: 1,400,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

This chip is comprised of 8 physical planes (sub planes) with 8KB WLs working as 4 logical planes to keep short BL and WL latency.
tPROG: Could be between 312µs and 624µs

Feb 16th, 2025 22:15 EST change timezone

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