Capacity: | 256 GB |
---|---|
Variants: | 256 GB 512 GB 1 TB |
Overprovisioning: | 17.6 GB / 7.4 % |
Production: | Active |
Released: | 2019 |
Price at Launch: | 89 USD |
Part Number: | SDBPNTY-256G |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
---|---|
Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.3 |
Power Draw: |
0.10 W (Idle) 2.0 W (Avg) 3.9 W (Max) |
Manufacturer: | WD |
---|---|
Name: | 20-82-00705-A2 Triton MP28 |
Architecture: | ARM 32-bit |
Core Count: | Triple-Core |
Foundry: | TSMC |
Process: | 28 nm |
Flash Channels: | 8 @ 800 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Toshiba |
---|---|
Name: | BiCS4 |
Type: | TLC |
Technology: | 96-layer |
Speed: | 533 MT/s .. 800 MT/s |
Capacity: | 2 chips @ 1 Tbit |
Toggle: | 3.0 |
Topology: | Charge Trap |
Process: | 19 nm |
Dies per Chip: | 4 dies @ 256 Gbit |
Planes per Die: | 2 |
Decks per Die: | 2 |
Word Lines: |
109 per NAND String
88.1% Vertical Efficiency |
Read Time (tR): | 59 µs |
Program Time (tProg): | 625 µs |
Die Read Speed: | 551 MB/s |
Die Write Speed: | 56 MB/s |
Endurance: (up to) |
1500 P/E Cycles
(3000 in SLC Mode) |
Page Size: | 16 KB |
Block Size: | 1152 Pages |
Plane Size: | 1980 Blocks |
Type: | DDR4 |
---|---|
Name: | Samsung |
Capacity: |
256 MB
(1x 256 MB) |
Sequential Read: | 3,150 MB/s |
---|---|
Sequential Write: | 2,100 MB/s |
Random Read: | 270,000 IOPS |
Random Write: | 280,000 IOPS |
Endurance: | 200 TBW |
Warranty: | 5 Years |
MTBF: | 1.8 Million Hours |
Drive Writes Per Day (DWPD): | 0.4 |
SLC Write Cache: | Yes |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Drive:Data collected from the Manufacturer's Datasheet NAND Die:Read latency tR: 58 µs (ABL) |