Capacity: | 1 TB (1000 GB) |
---|---|
Overprovisioning: | 92.7 GB / 10.0 % |
Production: | Active |
Released: | Sep 2021 |
Part Number: | PC005 Active-1TB |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
---|---|
Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.3 |
Power Draw: | Unknown |
Manufacturer: | Silicon Motion |
---|---|
Name: | SM2262ENG |
Architecture: | ARM 32-bit Cortex R5 |
Core Count: | Dual-Core |
Frequency: | 625 MHz |
Foundry: | TSMC |
Process: | 28 nm |
Flash Channels: | 8 @ 800 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | YMTC |
---|---|
Name: | Xtacking 1.0 |
Part Number: | YMN08TE1B3PC3B |
Type: | TLC |
Technology: | 64-layer |
Speed: | 800 MT/s |
Capacity: | 2 chips @ 4 Tbit |
ONFI: | 4.0 |
Topology: | Charge Trap |
Process: | 40 nm |
Die Size: | 58 mm² (4.4 Gbit/mm²) |
Dies per Chip: | 16 dies @ 256 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
73 per NAND String
87.7% Vertical Efficiency |
Read Time (tR): | 74 µs |
Program Time (tProg): | 760 µs |
Block Erase Time (tBERS): | 9.0 ms |
Die Read Speed: | 432 MB/s |
Die Write Speed: | 42 MB/s |
Endurance: (up to) |
1500 P/E Cycles |
Page Size: | 16 KB |
Block Size: | 1152 Pages |
Plane Size: | 1006 Blocks |
Type: | DDR4-2666 CL19 |
---|---|
Name: | NANYA NT5AD512M16A4-HR |
Capacity: |
1024 MB
(1x 1024 MB) |
Organization: | 8Gx16 |
Sequential Read: | 3,500 MB/s |
---|---|
Sequential Write: | 2,900 MB/s |
Random Read: | 340,000 IOPS |
Random Write: | 360,000 IOPS |
Endurance: | 640 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.4 |
SLC Write Cache: |
approx. 11 GB
(dynamic only) |
Speed when Cache Exhausted: | approx. 750 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
|
Controller:Controller clock speed might vary depending on the drive, from 575 MHz to 650 MHz NAND Die:Array Eficiency of over 90% |