Wednesday, January 4th 2012
Researchers Develop Breakthrough Field-Effect Transistor (FET) with Graphene
Sweden's Chalmers University researchers demonstrated a graphene-based transistor design that allows more compact RF mixer processing. This could very well be a breakthrough, because it not only allows designing much more compact radio-frequency electronics, but also allows circuits to run faster. This could accelerate the development of Terahertz electronics systems whose applications include radar, radio astronomy, and process monitoring. Its developers have named it G-FET, or Graphene field-effect transistor. An allotrope of carbon, graphene is an honeycomb lattice of carbon atoms on an atomic-scale. It is electrically-symmetrical, giving it the ability to act as electron or hole carrier. This means that a single G-FET can act as an RF mixer without needing the feeding circuits used in current designs.
Sources:
The Register, Chalmers
9 Comments on Researchers Develop Breakthrough Field-Effect Transistor (FET) with Graphene
www.physorg.com/news/2011-12-graphene-intense-laser-pulses.html
I kind of expect the upcoming jumps in computer tech to be relatively like going from vacuum tube transistors to transistors on silicone chips.
Think my favorite story I caught, maybe a few years ago, was the one where they were working on the ability to store data in light itself. After all, light can become more than one form. Fascinating since it made all those sci fi shows with data being stored in glowing crystals/etc, actually not too far off.