Samsung Electronics Co., Ltd. announced today that it has begun mass producing a new, high-performance SAS-interface solid state drive (SSD) using 10-nanometer (nm) class MLC NAND flash memory.

"With our new SAS SSD, our competitiveness in the enterprise storage SSD market has been strengthened," said Jeeho Baek, vice president, memory marketing, Samsung Electronics. "We are committed to providing storage customers with an exceptionally wide variety of next-generation, high-capacity SSDs in driving the fast-growing enterprise storage SSD market."

The new Samsung SAS SSD - SM1623 - is designed to meet the immediate need of many global customers for cost-effective, high-capacity SSDs. With this release, Samsung has bolstered its SAS (Serial Attached SCSI) SSD line-up targeted at enterprise customers. Samsung's extensive SSD portfolio for the enterprise market covers all available major interfaces, ranging from NVMe (Non-Volatile Memory express) to PCIe (Peripheral Component Interconnect express), and SATA (Serial Advanced Technology Attachment), as well as serial attached SCSI (SAS).

Succeeding the SAS SM1625 SSD, which was introduced in 2012, the new SM1623 has an 800 GB density.

Compared with the SM1625, which was based on 20 nm-class NAND flash, the new 10 nm-class SAS SSD delivers the same level of performance while improving productivity by more than 30 percent. It also supports more than a drive write per day (DWPD). This makes it well-suited for enterprise storage customers seeking SSDs with high endurance, high performance and an optimized TCO.

The SM1623 delivers random read and write speeds of up to 120,000 and 26,000 IOPS (Input/Output Operations per Second) respectively. Its sequential read and write speeds are up to 950 and 520 megabytes per second (MB/s).

In the near future, Samsung plans to introduce next-generation SAS SSDs to further enhance its SAS SSD line-up and add considerably to its presence in the enterprise SSD market.