Tuesday, January 4th 2022

GIGABYTE Reveals the Best Featured B660 and H610 Motherboards

GIGABYTE TECHNOLOGY Co. Ltd, a leading manufacturer of motherboards, graphics cards, and hardware solutions, today announced the B660 and H610 motherboards which deliver formidable and flexible platform to users. Featuring up to 16+1+1 phases DrMOS VRM design with each phase holding up to 60 amps and fully covered thermal design, GIGABYTE B660 and H610 lineup can perfectly support the latest 12th Gen Intel Core processors. The two memory configuration of DDR4 and DDR5 with exciting XMP functions delivers remarkable performance, as well as superior storage performance, expansions, and flexible network, GIGABYTE B660 and H610 lineup brings incredible performance beyond users' expectation.

Started from B560 chipsets, Intel brought into the memory overclocking feature to the latest B660 chipset with support of both DDR4 and DDR5 which earned user's favor on B-series. To enable stable power for CPU under high-speed operation and to enhance XMP overclocking on memory, GIGABYTE B660 AORUS and GAMING series motherboards adopt up to 16+1+1 power phases with 60 Amp each phase. AORUS lineup also equip full-covered heatsink and 5 W/mK thermal pad for advanced heat dissipation and improved stability on VRM area.
GIGABYTE B660 motherboards continue the support of DDR4 and DDR5 from Z690 chipset. Enhanced by the exclusive layout design, DDR4 supportive models can reach impressive speed of 5600 MHz*, while DDR5 models benefit from the new memory architecture to provide high power efficiency, low latency, and low power consumption. In addition, GIGABYTE B660 DDR5 motherboards level up several advanced features from the Z690 lineup. The "DDR5 Unlocked Voltage" feature can unlock the adjustment range of DDR5 memory native voltage, which allows users to reach higher memory clock with more stability. Moreover, the BIOS setting is correspondingly optimized to a new level, which "DDR5 Auto Booster" can boost native frequency of DDR5 from 4800 MHz to 5000 MHz with a simple click and automatically boost your memories after Windows loaded. This allows the performance improvements exert in real computing usage. "DDR5 XMP Booster" allows users to choose quickly from multiple built-in and pre-tuned memory overclocking profiles. "XMP 3.0 User Profile" enables users to create and burn in XMP profiles on their own to unleash the extreme performance of memories. Enhanced by above all, GIGABYTE B660 DDR5 motherboards memory frequency can be boosted to XMP 6000 MHz.

For users who plan to improve system performance by reinforce the access speed of storage devices, GIGABYTE B660 AORUS, GAMING M-ATX, and above models integrate two sets of PCIe 4.0 M.2 slots with least one thermal guard. This design not only extract maximum performance at 7000 MB/s of the latest PCIe 4.0 controller SSD, but users can also improve access speed by configuring RAID.

As for connectivity, GIGABYTE B660 AORUS, and GAMING series motherboards equip with 2.5Gb Ethernet and 802.11ax WiFi 6/ 802.11ac network for the most flexible network. With proper configuration, users can enjoy hassle-free, high bandwidth network during the online battle or network storage. When it comes to external expansion, GIGABYTE select B660 motherboards adopt USB 3.2 Gen2x2 Type C of 20 Gbps and front USB 3.2 Gen 2 Type-C design provides a faster and more efficient transmission speed of external storages.

GIGABYTE B660 and H610 motherboards have launched in the market. Along with Z690 motherboards, the robust GIGABYTE Intel 600 lineup is the ultimate choice of high-end and gaming desktops.
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3 Comments on GIGABYTE Reveals the Best Featured B660 and H610 Motherboards

#1
Prima.Vera
btarunrwhile DDR5 models benefit from the new memory architecture to provide high power efficiency, low latency, and low power consumption.
low latency for DDR5? Is this a joke? :laugh: :laugh: :laugh:
Posted on Reply
#3
Wirko
Lest someone order a wrong board, new H61 and H67 motherboards are still on sale.
Posted on Reply
Dec 25th, 2024 14:28 EST change timezone

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