At the beginning of this year, MSI announced the pioneering support for a memory capacity of 192 GB. Today, we are proud to unveil an even greater milestone - MSI motherboards now support memory capacities of up to 256 GB for 4 DIMMs motherboards and 128 GB for 2 DIMMs motherboards. This significant enhancement empowers DIY enthusiasts with unparalleled flexibility to optimize multitasking capabilities and ensures a seamless computing experience.

This accomplishment underscores the strong collaboration between MSI and leading memory brands to achieve enhanced performance and remarkable milestones. The partnered memory for this achievement is Kingston FURY Renegade DDR5 memory, offering an impressive 64 GB capacity per module. Built on Micron's industry-leading 1β (1-beta) technology, enables new capacities not seen before for dual channel PCs.

Micron Technology, Inc., today announced it has extended its industry-leading 1β (1-beta) process node technology with the introduction of 16Gb DDR5 memory. With demonstrated in-system functionality at speeds up to 7,200 MT/s, Micron's 1β DDR5 DRAM is now shipping to all data center and PC customers. Micron's 1β-based DDR5 memory with advanced high-k CMOS device technology, 4-phase clocking and clock-sync provides up to a 50% performance uplift and 33% improvement in performance per watt over the previous generation.

As CPU core counts increase to meet the demands of data center workloads, the need for higher memory bandwidth and capacities grows significantly to overcome the 'memory wall' challenge while optimizing the total cost of ownership for customers. Micron's 1β DDR5 DRAM allows computational capabilities to scale with higher performance enabling applications like artificial intelligence (AI) training and inference, generative AI, data analytics, and in-memory databases (IMDB) across data center and client platforms. The new 1β DDR5 DRAM product line offers current module densities in speeds ranging from 4,800 MT/s up to 7,200 MT/s for use in data center and client applications.

Although DRAM is using much less refined production processes compared to the latest processors and GPUs, all the major manufacturers are continuing to shrink their manufacturing nodes step by step. Part of the reason for this, is that a node shrink doesn't have the same improvements for DRAM as it does for most types of field-effect transistors or FETs, which are mostly used for making processor logic of some kind. SK Hynix is now said to have entered the partner verification process of its 5th gen 1β DRAM, to make sure its latest 1x nm DRAM is compatible with major applications. In SK Hynix's case this should roughly translate to a 12 nm process node.

According to Chosun Media in Korea, Intel will take part in this verification, with Intel having finished verification of SK Hynix's 4th gen 1α DRAM for its 4th gen Xeon Scalable processor. Initially, SK Hynix's 5th gen 1β DRAM will be targeting server applications, so it's likely it will be tested for compatibility with the same platforms from Intel, among others. The new 1β DRAM is said to increase efficiency by more than 40 percent, although the publication didn't mention if this is power efficiency or something else. The 1β DRAM from SK Hynix, as well as Samsung—who announced its 1β DRAM in December 2022—are made using an EUV lithography process and the two Korean DRAM makers are the only two makers of DRAM that are using EUV so far.

Micron Technology, Inc., announced today that it is shipping qualification samples of its 1β (1-beta) DRAM technology to select smartphone manufacturers and chipset partners and has achieved mass production readiness with the world's most advanced DRAM technology node. The company is debuting its next generation of process technology on its low-power double data rate 5X (LPDDR5X) mobile memory, delivering top speed grades of 8.5 gigabits (Gb) per second. The node delivers significant gains across performance, bit density and power efficiency that will have sweeping market benefits. Beyond mobile, 1β delivers the low-latency, low-power, high-performance DRAM that is essential to support highly responsive applications, real-time services, personalization and contextualization of experiences, from intelligent vehicles to data centers.

The world's most advanced DRAM process node, 1β represents an advancement of the company's market leadership cemented with the volume shipment of 1α (1-alpha) in 2021. The node delivers around a 15% power efficiency improvement and more than a 35% bit density improvement with a 16Gb per die capacity. "The launch of our 1-beta DRAM signals yet another leap forward for memory innovation, brought to life by our proprietary multi-patterning lithography in combination with leading-edge process technology and advanced materials capabilities," said Scott DeBoer, executive vice president of technology and products at Micron. "In delivering the world's most advanced DRAM technology with more bits per memory wafer than ever before, this node lays the foundation to usher in a new generation of data-rich, intelligent and energy-efficient technologies from the edge to the cloud."