Micron has achieved a significant advancement of the HBM4 architecture, which will stack 12 DRAM dies (12-Hi) to provide 36 GB of capacity per package. According to company representatives, initial engineering samples are scheduled to ship to key partners in the coming weeks, paving the way for full production in early 2026. The HBM4 design relies on Micron's established 1β ("one-beta") process node for DRAM tiles, in production since 2022, while it prepares to introduce EUV-enabled 1γ ("one-gamma") later this year for DDR5. By increasing the interface width from 1,024 to 2,048 bits per stack, each HBM4 chip can achieve a sustained memory bandwidth of 2 TB/s, representing a 20% efficiency improvement over the existing HBM3E standard.

NVIDIA and AMD are expected to be early adopters of Micron's HBM4. NVIDIA plans to integrate these memory modules into its upcoming Rubin-Vera AI accelerators in the second half of 2026. AMD is anticipated to incorporate HBM4 into its next-generation Instinct MI400 series, with further information to be revealed at the company's Advancing AI 2025 conference. The increased capacity and bandwidth of HBM4 will address growing demands in generative AI, high-performance computing, and other data-intensive applications. Larger stack heights and expanded interface widths enable more efficient data movement, a critical factor in multi-chip configurations and memory-coherent interconnects. As Micron begins mass production of HBM4, major obstacles to overcome will be thermal performance and real-world benchmarks, which will determine how effectively this new memory standard can support the most demanding AI workloads.

Micron Technology, Inc. (Nasdaq: MU), announced today that it is shipping qualification samples of the world's first 1γ (1-gamma) node-based low-power double data rate 5X (LPDDR5X) memory, designed to accelerate AI applications on flagship smartphones. Delivering the industry's fastest LPDDR5X speed grade of 10.7 gigabits per second (Gbps), combined with up to a 20% power savings, Micron LPDDR5X transforms smartphones with faster, smoother mobile experiences and longer battery life - even when executing data-intensive workloads such as AI-powered translation or image generation.

To meet the industry's increasing demand for compact solutions for next-generation smartphone designs, Micron's engineers have shrunk the LPDDR5X package size to offer the industry's thinnest package of 0.61 millimeters, making it 6% thinner compared to competitive offerings, and representing a 14% height reduction from the previous generation. The small form factor unlocks more possibilities for smartphone manufacturers to design ultrathin or foldable smartphones.

Micron at the 2025 International CES showed us product that hint at the company planning a strong comeback to the client and PC-DIY market segments. The company's Crucial brand is already a high-volume player in the client segment, but the company never really approached the enthusiast segment. Products like the company's new T705 Pro and P510 NVMe SSDs, and DDR5 Pro Overclocking memory, seek to change this. We begin our tour with PC memory, and the DDR5 Pro OC CUDIMMs. Crucial has jumped onto the CKD bandwagon, introducing memory modules and kits that come with DDR5-6400 out of the box, but which are geared for manual overclocking to take advantage of the 1β DRAM chips underneath (hence the name).

The company also showed us their first DDR5 CSODIMM suitable for the next generation of notebooks with HX-segment processors. This module comes with a CKD and a DDR5-6400 JEDEC-standard SPD profile out of the box. Lastly, there's the Micron-branded LPCAMM2, which comes in speeds of up to LPDDR5X-8533, and is suitable for the next generation of ultraportables.

At the beginning of this year, MSI announced the pioneering support for a memory capacity of 192 GB. Today, we are proud to unveil an even greater milestone - MSI motherboards now support memory capacities of up to 256 GB for 4 DIMMs motherboards and 128 GB for 2 DIMMs motherboards. This significant enhancement empowers DIY enthusiasts with unparalleled flexibility to optimize multitasking capabilities and ensures a seamless computing experience.

This accomplishment underscores the strong collaboration between MSI and leading memory brands to achieve enhanced performance and remarkable milestones. The partnered memory for this achievement is Kingston FURY Renegade DDR5 memory, offering an impressive 64 GB capacity per module. Built on Micron's industry-leading 1β (1-beta) technology, enables new capacities not seen before for dual channel PCs.

Micron Technology, Inc., today announced it has extended its industry-leading 1β (1-beta) process node technology with the introduction of 16Gb DDR5 memory. With demonstrated in-system functionality at speeds up to 7,200 MT/s, Micron's 1β DDR5 DRAM is now shipping to all data center and PC customers. Micron's 1β-based DDR5 memory with advanced high-k CMOS device technology, 4-phase clocking and clock-sync provides up to a 50% performance uplift and 33% improvement in performance per watt over the previous generation.

As CPU core counts increase to meet the demands of data center workloads, the need for higher memory bandwidth and capacities grows significantly to overcome the 'memory wall' challenge while optimizing the total cost of ownership for customers. Micron's 1β DDR5 DRAM allows computational capabilities to scale with higher performance enabling applications like artificial intelligence (AI) training and inference, generative AI, data analytics, and in-memory databases (IMDB) across data center and client platforms. The new 1β DDR5 DRAM product line offers current module densities in speeds ranging from 4,800 MT/s up to 7,200 MT/s for use in data center and client applications.

Although DRAM is using much less refined production processes compared to the latest processors and GPUs, all the major manufacturers are continuing to shrink their manufacturing nodes step by step. Part of the reason for this, is that a node shrink doesn't have the same improvements for DRAM as it does for most types of field-effect transistors or FETs, which are mostly used for making processor logic of some kind. SK Hynix is now said to have entered the partner verification process of its 5th gen 1β DRAM, to make sure its latest 1x nm DRAM is compatible with major applications. In SK Hynix's case this should roughly translate to a 12 nm process node.

According to Chosun Media in Korea, Intel will take part in this verification, with Intel having finished verification of SK Hynix's 4th gen 1α DRAM for its 4th gen Xeon Scalable processor. Initially, SK Hynix's 5th gen 1β DRAM will be targeting server applications, so it's likely it will be tested for compatibility with the same platforms from Intel, among others. The new 1β DRAM is said to increase efficiency by more than 40 percent, although the publication didn't mention if this is power efficiency or something else. The 1β DRAM from SK Hynix, as well as Samsung—who announced its 1β DRAM in December 2022—are made using an EUV lithography process and the two Korean DRAM makers are the only two makers of DRAM that are using EUV so far.

Micron Technology, Inc., announced today that it is shipping qualification samples of its 1β (1-beta) DRAM technology to select smartphone manufacturers and chipset partners and has achieved mass production readiness with the world's most advanced DRAM technology node. The company is debuting its next generation of process technology on its low-power double data rate 5X (LPDDR5X) mobile memory, delivering top speed grades of 8.5 gigabits (Gb) per second. The node delivers significant gains across performance, bit density and power efficiency that will have sweeping market benefits. Beyond mobile, 1β delivers the low-latency, low-power, high-performance DRAM that is essential to support highly responsive applications, real-time services, personalization and contextualization of experiences, from intelligent vehicles to data centers.

The world's most advanced DRAM process node, 1β represents an advancement of the company's market leadership cemented with the volume shipment of 1α (1-alpha) in 2021. The node delivers around a 15% power efficiency improvement and more than a 35% bit density improvement with a 16Gb per die capacity. "The launch of our 1-beta DRAM signals yet another leap forward for memory innovation, brought to life by our proprietary multi-patterning lithography in combination with leading-edge process technology and advanced materials capabilities," said Scott DeBoer, executive vice president of technology and products at Micron. "In delivering the world's most advanced DRAM technology with more bits per memory wafer than ever before, this node lays the foundation to usher in a new generation of data-rich, intelligent and energy-efficient technologies from the edge to the cloud."