Tuesday, October 10th 2023

Micron Delivers High-Speed 7,200 MT/s DDR5 Memory Using 1β Technology

Micron Technology, Inc., today announced it has extended its industry-leading 1β (1-beta) process node technology with the introduction of 16Gb DDR5 memory. With demonstrated in-system functionality at speeds up to 7,200 MT/s, Micron's 1β DDR5 DRAM is now shipping to all data center and PC customers. Micron's 1β-based DDR5 memory with advanced high-k CMOS device technology, 4-phase clocking and clock-sync provides up to a 50% performance uplift and 33% improvement in performance per watt over the previous generation.

As CPU core counts increase to meet the demands of data center workloads, the need for higher memory bandwidth and capacities grows significantly to overcome the 'memory wall' challenge while optimizing the total cost of ownership for customers. Micron's 1β DDR5 DRAM allows computational capabilities to scale with higher performance enabling applications like artificial intelligence (AI) training and inference, generative AI, data analytics, and in-memory databases (IMDB) across data center and client platforms. The new 1β DDR5 DRAM product line offers current module densities in speeds ranging from 4,800 MT/s up to 7,200 MT/s for use in data center and client applications.
"The high-volume manufacturing and availability of 1β DDR5 DRAM for client and data center platforms signals an important milestone in the industry. Our collaboration with our ecosystem partners and customers will drive faster adoption of these higher-performance memory offerings," said Brian Callaway, corporate vice president of Micron's Core Compute Design Engineering Group.

Micron's 1β technology enables Micron to deliver a broad portfolio of memory-based solutions, including DDR5 RDIMMs and MCRDIMMs using 16Gb, 24Gb and 32Gb DRAM die, LPDDR5X using 16Gb and 24Gb DRAM die, HBM3E and GDDR7. The new Micron 16Gb DDR5 memory offerings will be available through direct sales and channel partners.

Industry Quotes:
"ASUS is a leader in high-performance notebooks for consumer and gaming applications. The transition of the memory subsystem to DDR5 is a key focus area for ASUS," said Y.C. Chen, associate vice president of ASUS. "We are excited to launch our ASUS and ROG notebooks with Micron's 1β DDR5 to provide the superior user experience our customers demand."

"Ampere's Cloud Native Processors paired with Micron's leading 1β DDR5 provide best-in-class compute solutions to deliver the performance, scalability and power efficiency hyperscalers require," said Jeff Wittich, chief product officer at Ampere Computing. "The early integration of Micron's 1β DDR5 at 7,200 MT/s speeds with our AmpereOne platforms will continue to drive advances in AI, machine learning and all high-performance compute applications."

"We are excited to partner with Micron to power next-generation platforms optimized for targeted applications with our industry-leading DDR5, LPDDR5X, GDDR6 and HBM3 IP system solutions and Micron's world-class memory portfolio," said Boyd Phelps, vice president and general manager of the Cadence IP Group. "By leveraging Micron's advanced 1β DDR5 memory, we're able to evaluate and qualify our high-performance DDR5 IP with speeds up to 7,200MT/s."
Source: Micron
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6 Comments on Micron Delivers High-Speed 7,200 MT/s DDR5 Memory Using 1β Technology

#1
Darkmont
Great thing for the data center. Also interested to see how these will do for overclocking. .
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#2
Bwaze
So now we're gonna be beta testers for hardware too?

:p
Posted on Reply
#3
AusWolf
What's a 1β process node?
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#4
JAB Creations
AusWolfWhat's a 1β process node?
Second, I know that "nm" itself is a lot more marketing these days than actual measurement though Micron's term is just flat out BS.
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#6
Patriot
AusWolfWhat's a 1β process node?
I had to scroll back in news to the 1α launch.
www.micron.com/about/blog/2021/january/inside-1a-the-worlds-most-advanced-dram-process-technology?utm_medium=announcement&utm_source=pr&utm_id=1beta
But a funny thing happened a few years ago in the memory world. We stopped talking about exact numbers and started to use terms like 1x, 1y and 1z. For DRAM particularly, the name of the node usually corresponds to the dimension of half of the pitch — the “half-pitch” — of the active area in the memory cell array. As for 1α, you can think of it as the fourth generation of the 10nm class where the half-pitch ranges from 10 to 19nm. As we go from 1x nanometer to 1y, 1z and 1α, this dimension gets smaller and smaller. We started with 1x, but as we continued to shrink and name the next nodes, we hit the end of the roman alphabet. That’s why we switched to the Greek alphabet alpha, beta, gamma and so on.
I take that to mean, this is a 5th gen 10nm product as it still lacks EUV that most 7nm requires... Also, I kind of guessed that based on the 1(x) naming scheme.

Moving back to the current process...
1β represents an advancement of the company’s market leadership cemented with the volume shipment of 1α (1-alpha) in 2021. The node delivers around a 15% power efficiency improvement and more than a 35% bit density improvement1 with a 16Gb per die capacity.
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