Intel has unveiled some interesting advances in semiconductor manufacturing at the International Solid-State Circuits Conference (ISSCC), showcasing the capabilities of its highly anticipated Intel 18A process technology. The presentation highlighted significant improvements in SRAM bit cell density. The PowerVia system, coupled with RibbonFET (GAA) transistors, is at the heart of Intel's node. The company demonstrated solid progress with their high-performance SRAM cells, achieving a reduction from 0.03 µm² in Intel 3 to 0.023 µm² in Intel 18A. High-density cells showed similar improvement, shrinking to 0.021 µm². These advancements represent scaling factors of 0.77 and 0.88 respectively, which are significant achievements in SRAM technology, once thought to be done with scaling benefits.

Implementing PowerVia technology is an Intel-first approach to addressing voltage drops and interference in processor logic areas. Using an "around the array" scheme, Intel strategically applies PowerVias to I/O, control, and decoder elements while optimizing bit cell design without a frontal power supply. The macro bit density of 38.1 MBit/mm² achieved by Intel 18A puts the company in a strong competitive position. While TSMC reported matching figures with their N2 process, Intel's comprehensive approach with 18A, combining PowerVia and GAA transistors, could challenge Smausng and TSMC, with long-term aspirations to compete for premium clients currently served by TSMC, including giants like NVIDIA, Apple, and AMD.

During its first post-Western Digital spinoff investor day, SanDisk showed something it has been working on to tackle the AI sector. High-bandwidth flash (HBF) is a new memory architecture that combines 3D NAND flash storage with bandwidth capabilities comparable to high-bandwidth memory (HBM). The HBF design stacks 16 3D NAND BiCS8 dies using through-silicon vias, with a logic layer enabling parallel access to memory sub-arrays. This configuration achieves 8 to 16 times greater capacity per stack than current HBM implementations. A system using eight HBF stacks can provide 4 TB of VRAM to store large AI models like GPT-4 directly on GPU hardware. The architecture breaks from conventional NAND design by implementing independently accessible memory sub-arrays, moving beyond traditional multi-plane approaches. While HBF surpasses HBM's capacity specifications, it maintains higher latency than DRAM, limiting its application to specific workloads.

SanDisk has not disclosed its solution for NAND's inherent write endurance limitations, though using pSLC NAND makes it possible to balance durability and cost. The bandwidth of HBF is also unknown, as the company hasn't put out details yet. SanDisk Memory Technology Chief Alper Ilkbahar confirmed the technology targets read-intensive AI inference tasks rather than latency-sensitive applications. The company is developing HBF as an open standard, incorporating mechanical and electrical interfaces similar to HBM to simplify integration. Some challenges remain, including NAND's block-level addressing limitations and writing endurance constraints. While these factors make HBF unsuitable for gaming applications, the technology's high capacity and throughput characteristics align with AI model storage and inference requirements. SanDisk has announced plans for three generations of HBF development, indicating a long-term commitment to the technology.

Samsung Electronics today reported financial results for the fourth quarter and the fiscal year 2024. The Company posted KRW 75.8 trillion in consolidated revenue and KRW 6.5 trillion in operating profit in the quarter ended December 31, 2024. For the full year, it reported KRW 300.9 trillion in annual revenue and KRW 32.7 trillion in operating profit.

Although fourth quarter revenue and operating profit decreased on a quarter-on-quarter (QoQ) basis, annual revenue reached the second-highest on record, surpassed only in 2022. Meanwhile, operating profit was down KRW 2.7 trillion QoQ, due to soft market conditions especially for IT products, and an increase in expenditures including R&D. In the first quarter of 2025, while overall earnings improvement may be limited due to weakness in the semiconductors business, the Company aims to pursue growth through increased sales of smartphones with differentiated AI experiences, as well as premium products in the Device eXperience (DX) Division.

Montage Technology today announced that it has successfully sampled its Gen 2 Multiplexed Rank Registering Clock Driver (MRCD) and Multiplexed Rank Data Buffer (MDB) chipset to leading global memory manufacturers. Designed for DDR5 Multiplexed Rank DIMM (MRDIMM), this new chipset supports data rates up to 12800 MT/s, delivering exceptional memory performance for next-generation computing platforms.

The release comes at a crucial time, as AI and big data analytics drive increasing demands for memory bandwidth in data centers. MRDIMM technology has emerged as a key solution to address this challenge, particularly as server processors continue to increase in core count.

Transcend Information Inc. (Transcend), a global leader in storage solutions, is proud to announce its new DDR5 6400 CUDIMM DRAM modules. Designed specifically for gamers, content creators, DIY PC enthusiasts, and demanding professionals, these modules offer enhanced performance and stability to meet varying speed and capacity requirements. Optimized from standard DIMMs, CUDIMMs include a Client Clock Driver (CKD) for stable and efficient operation, making them ideal for high-performance desktop systems that require greater bandwidth and reliability.

With data transfer rates of up to 6400 MT/s, Transcend's DDR5 6400 DRAM modules significantly boost gaming performance, video editing smoothness, and large file processing speeds. Whether you are tackling the latest AAA gaming titles, editing high-resolution videos, or multitasking across multiple applications, these modules keep your system running smoothly even under extreme load and deliver an exceptional user experience. Plus, built-in on-die Error Correction Code (ECC) technology ensures data integrity, safeguarding important files, game progress, and creative content.

TrendForce's latest research report highlights that the NAND Flash industry will continue to face dual pressure from weak demand and oversupply in 2025. In response, manufacturers including Micron, Kioxia/SanDisk, Samsung, and SK hynix/Solidigm have similar plans to cut production—a move that could accelerate industry consolidation in the long term.

TrendForce reports that NAND Flash manufacturers are primarily implementing production cuts by lowering utilization rates and delaying process upgrades. These actions are driven by three major factors:

Numem, an innovator focused on accelerating memory for AI workloads, will be at the upcoming Chiplet Summit to showcase its high-performance solutions. By accelerating the delivery of data via new memory subsystem designs, Numem solutions are re-architecting the hierarchy of AI memory tiers to eliminate the bottlenecks that negatively impact power and performance.

The rapid growth of AI workloads and AI Processor/GPUs are exacerbating the memory bottleneck caused by the slowing performance improvements and scalability of SRAM and DRAM - presenting a major obstacle to maximizing system performance. To overcome this, there is a pressing need for intelligent memory solutions that offer higher power efficiency and greater bandwidth, coupled with a reevaluation of traditional memory architectures.

Thermaltake, a leading PC DIY brand for premium hardware solutions, proudly launches today at CES 2025 the TOUGHRAM XG RGB D5 7200 MT/s 32 GB (16 GB x2), now equipped with the latest CKD (Client Clock Driver) technology. This new addition to Thermaltake's high-performance DDR5 memory lineup integrates advanced technology with a sleek design, offering an exceptional solution for PC enthusiasts and professionals. With CKD technology, the TOUGHRAM XG RGB D5 Memory ensures superior signal integrity, improved power efficiency, and enhanced overclocking stability, delivering consistent performance under the most demanding workloads. Ideal for gaming, creative projects, and AI-driven applications, this memory module is engineered to exceed the expectations of modern high-performance computing.

"Thermaltake is committed to redefining the limits of DRAM memory technology to meet the evolving needs of gamers and professionals," said Kenny Lin, CEO of Thermaltake. "The TOUGHRAM XG RGB D5 with CKD technology exemplifies our dedication to delivering cutting-edge solutions that offer superior speed, stability, and customization; whether for serious gamers, creators, or even AI development, this memory sets a new benchmark in high-performance computing."

Corsair today announced a bounty of new hardware for PC builders and content creators, ranging from new power supplies and cases to new storage and memory offerings. In addition to all-new hardware such as the XENEON EDGE 14.5" Touchscreen, EX400U USB4 External SSD, DOMINATOR TITANIUM Wave Accessory Kit, and Corsair Custom Lab memory, there are also updates to the distinguished RMe and HXi power supplies featuring boosted capabilities for next-gen GPUs. Finally, the revamped 5000T Series of mid-tower cases introduces support for reverse-connector motherboards, making them the perfect showcase for super-clean builds.

New hardware announcements:

• XENEON EDGE 14.5" LCD Touchscreen
• RMe Series (2025) Power Supplies
• 5000T Series Mid-Tower Cases
• HXi Series (2025) Power Supplies
• EX400U USB4 External SSD
• Corsair Custom Lab DRAM
• DOMINATOR TITANIUM Wave Accessory Kit

Thermal Grizzly's Thermal Putty offers a premium alternative to traditional thermal pads. It is electrically non-conductive, easy to apply, and functions as a flexible gap filler that compensates for height differences. This makes it an ideal replacement for thermal pads in graphics cards. Graphics cards are typically equipped with thermal pads of varying heights from the factory. When replacing these pads or upgrading to a GPU water cooler, matching replacement pads are necessary.

TG Thermal Putty can compensate for height differences from 0.2 to 3.0 mm, making it a versatile solution. Thermal Putty can be applied in two ways. Firstly, it can be applied over large areas using the included spatulas. Alternatively, it can be applied manually (gloves are recommended). When applied by hand, small beads can be shaped to fit the specific contact surfaces (e.g., VRAM, SMD).

Marvell Technology, Inc., a leader in data infrastructure semiconductor solutions, today announced that it has pioneered a new custom HBM compute architecture that enables XPUs to achieve greater compute and memory density. The new technology is available to all of its custom silicon customers to improve the performance, efficiency and TCO of their custom XPUs. Marvell is collaborating with its cloud customers and leading HBM manufacturers, Micron, Samsung Electronics, and SK hynix to define and develop custom HBM solutions for next-generation XPUs.

HBM is a critical component integrated within the XPU using advanced 2.5D packaging technology and high-speed industry-standard interfaces. However, the scaling of XPUs is limited by the current standard interface-based architecture. The new Marvell custom HBM compute architecture introduces tailored interfaces to optimize performance, power, die size, and cost for specific XPU designs. This approach considers the compute silicon, HBM stacks, and packaging. By customizing the HBM memory subsystem, including the stack itself, Marvell is advancing customization in cloud data center infrastructure. Marvell is collaborating with major HBM makers to implement this new architecture and meet cloud data center operators' needs.

Kioxia Corporation, a world leader in memory solutions, today announced the development of OCTRAM (Oxide-Semiconductor Channel Transistor DRAM), a new type of 4F2 DRAM, comprised of an oxide-semiconductor transistor that has a high ON current, and an ultra-low OFF current, simultaneously. This technology is expected to realize a low power DRAM by bringing out the ultra-low leakage property of the InGaZnO transistor. This was first announced at the IEEE International Electron Devices Meeting (IEDM) held in San Francisco, CA on December 9, 2024. This achievement was jointly developed by Nanya Technology and Kioxia Corporation. This technology has the potential to lower power consumption in a wide range of applications, including AI and post-5G communication systems, and IoT products.

The OCTRAM utilizes a cylinder-shaped InGaZnO vertical transistor (Fig.1) as a cell transistor. This design enables the adaptation of a 4F2 DRAM, which offers significant advantages in memory density compared to the conventional silicon-based 6F2 DRAM.

During the prestigious IEDM 2024 conference, NVIDIA presented its vision for the future AI accelerator design, which the company plans to chase after in future accelerator iterations. Currently, the limits of chip packaging and silicon innovation are being stretched. However, future AI accelerators might need some additional verticals to gain the required performance improvement. The proposed design at IEDM 24 introduces silicon photonics (SiPh) at the center stage. NVIDIA's architecture calls for 12 SiPh connections for intrachip and interchip connections, with three connections per GPU tile across four GPU tiles per tier. This marks a significant departure from traditional interconnect technologies, which in the past have been limited by the natural properties of copper.

Perhaps the most striking aspect of NVIDIA's vision is the introduction of so-called "GPU tiers"—a novel approach that appears to stack GPU components vertically. This is complemented by an advanced 3D stacked DRAM configuration featuring six memory units per tile, enabling fine-grained memory access and substantially improved bandwidth. This stacked DRAM would have a direct electrical connection to the GPU tiles, mimicking the AMD 3D V-Cache on a larger scale. However, the timeline for implementation reflects the significant technological hurdles that must be overcome. The scale-up of silicon photonics manufacturing presents a particular challenge, with NVIDIA requiring the capacity to produce over one million SiPh connections monthly to make the design commercially viable. NVIDIA has invested in Lightmatter, which builds photonic packages for scaling the compute, so some form of its technology could end up in future NVIDIA accelerators

Global sales of total semiconductor manufacturing equipment by original equipment manufacturers (OEMs) are forecast to set a new industry record, reaching $113 billion in 2024, growing 6.5% year-on-year, SEMI announced today in its Year-End Total Semiconductor Equipment Forecast - OEM Perspective at SEMICON Japan 2024. Semiconductor manufacturing equipment growth is expected to continue in the following years, reaching new records of $121 billion in 2025 and $139 billion in 2026, supported by both the front-end and back-end segments.

"Three consecutive years of projected growth in investments in semiconductor manufacturing reflect the vital role our industry plays in underpinning the global economy and advancing technology innovation," said Ajit Manocha, SEMI president and CEO. "Since our July 2024 forecast, the outlook for 2024 semiconductor equipment sales has brightened, especially with stronger-than-expected investments from China and in AI-related sectors. Together with our forecast extension through 2026, it highlights the robust growth drivers across segments, applications, and regions."

The Biden administration is set to announce new, targeted restrictions on China's semiconductor industry, focusing primarily on emerging chip manufacturing equipment companies rather than broad industry-wide limitations. According to Bloomberg, these new restrictions are supposed to take effect on Monday. The new rules will specifically target two manufacturing facilities owned by Semiconductor Manufacturing International Corp. (SMIC) and will add select companies to the US Entity List, restricting their access to American technology. However, most of Huawei's suppliers can continue their operations, suggesting a more mild strategy. The restrictions will focus on over 100 emerging Chinese semiconductor equipment manufacturers, many of which receive government funding. These companies are developing tools intended to replace those currently supplied by industry leaders such as ASML, Applied Materials, and Tokyo Electron.

The moderated approach comes after significant lobbying efforts from American semiconductor companies, who argued that stricter restrictions could disadvantage them against international competitors. Major firms like Applied Materials, KLA, and Lam Research voiced concerns about losing market share to companies in Japan and the Netherlands, where similar but less stringent export controls are in place. Notably, Japanese companies like SUMCO are already seeing the revenue impacts of Chinese independence. Lastly, the restrictions will have a limited effect on China's memory chip sector. The new measures will not directly affect ChangXin Memory Technologies (CXMT), a significant Chinese DRAM manufacturer capable of producing high-bandwidth memory for AI applications.

Samsung Electronics today announced new leadership for the next phase of the Company's growth and to strengthen its future competitiveness, focusing on the semiconductor business.

Young Hyun Jun, Vice Chairman and Head of Device Solutions (DS) Division, was named CEO and will also become the Head of Memory Business and Samsung Advanced Institute of Technology. Jinman Han was promoted to President and will become the Head of Foundry Business, while Seok Woo Nam will become Chief Technology Officer of Foundry Business, a newly-created position.

TrendForce's latest investigations reveal that the global DRAM industry revenue reached US$26.02 billion in 3Q24, marking a 13.6% QoQ increase. The rise was driven by growing demand for DDR5 and HBM in data centers, despite a decline in LPDDR4 and DDR4 shipments due to inventory reduction by Chinese smartphone brands and capacity expansion by Chinese DRAM suppliers. ASPs continued their upward trend from the previous quarter, with contract prices rising by 8% to 13%, further supported by HBM's displacement of conventional DRAM production.

Looking ahead to 4Q24, TrendForce projects a QoQ increase in overall DRAM bit shipments. However, the capacity constraints caused by HBM production are expected to have a weaker-than-anticipated impact on pricing. Additionally, capacity expansions by Chinese suppliers may prompt PC OEMs and smartphone brands to aggressively deplete inventory to secure lower-priced DRAM products. As a result, contract prices for conventional DRAM and blended prices for conventional DRAM and HBM are expected to decline.

Microsoft has announced its new Azure HBv5 virtual machines, featuring unique custom hardware made by AMD. CEO Satya Nadella made the announcement during Microsoft Ignite, introducing a custom-designed AMD processor solution that achieves remarkable performance metrics. The new HBv5 virtual machines deliver an extraordinary 6.9 TB/s of memory bandwidth, utilizing four specialized AMD processors equipped with HBM3 technology. This represents an eightfold improvement over existing cloud alternatives and a staggering 20-fold increase compared to previous Azure HBv3 configurations. Each HBv5 virtual machine boasts impressive specifications, including up to 352 AMD EPYC "Zen4" CPU cores capable of reaching 4 GHz peak frequencies. The system provides users with 400-450 GB of HBM3 RAM and features doubled Infinity Fabric bandwidth compared to any previous AMD EPYC server platform. Given that each VM had four CPUs, this yields 88 Zen 4 cores per CPU socket, with 9 GB of memory per core.

The architecture includes 800 Gb/s of NVIDIA Quantum-2 InfiniBand connectivity and 14 TB of local NVMe SSD storage. The development marks a strategic shift in addressing memory performance limitations, which Microsoft identifies as a critical bottleneck in HPC applications. This custom design particularly benefits sectors requiring intensive computational resources, including automotive design, aerospace simulation, weather modeling, and energy research. While the CPU appears custom-designed for Microsoft's needs, it bears similarities to previously rumored AMD processors, suggesting a possible connection to the speculated MI300C chip architecture. The system's design choices, including disabled SMT and single-tenant configuration, clearly focus on optimizing performance for specific HPC workloads. If readers can recall, Intel also made customized Xeons for AWS and their needs, which is normal in the hyperscaler space, given they drive most of the revenue.

Samsung Electronics today reported financial results for the third quarter ended Sept. 30, 2024. The Company posted KRW 79.1 trillion in consolidated revenue, an increase of 7% from the previous quarter, on the back of the launch effects of new smartphone models and increased sales of high-end memory products. Operating profit declined to KRW 9.18 trillion, largely due to one-off costs, including the provision of incentives in the Device Solutions (DS) Division. The strength of the Korean won against the U.S. dollar resulted in a negative impact on company-wide operating profit of about KRW 0.5 trillion compared to the previous quarter.

In the fourth quarter, while memory demand for mobile and PC may encounter softness, growth in AI will keep demand at robust levels. Against this backdrop, the Company will concentrate on driving sales of High Bandwidth Memory (HBM) and high-density products. The Foundry Business aims to increase order volumes by enhancing advanced process technologies. Samsung Display Corporation (SDC) expects the demand of flagship products from major customers to continue, while maintaining a quite conservative outlook on its performance. The Device eXperience (DX) Division will continue to focus on premium products, but sales are expected to decline slightly compared to the previous quarter.

Innodisk, a leading global AI solution provider, announces its DDR5 6400 DRAM series, featuring the industry's largest 64 GB single-module capacity. This 6400 series is purpose-built for data-intensive applications in AI, telehealth, and edge computing, where high performance at the edge is crucial. Available in versatile form factors, including CUDIMM, CSODIMM, and RDIMM, the series delivers unmatched speed, stability, and capacity to meet the rigorous demands of modern edge AI and industrial applications.

The DDR5 6400 series delivers a data transfer rate of 6400 MT/s, offering a 14% boost in speed over previous generations and doubling the maximum capacity to 64 GB. These enhancements make it an optimal choice for applications like Large Language Models (LLMs), generative AI, autonomous vehicles, and mixed reality, which require high-speed, reliable data processing in real time.

TrendForce reports that the focus on HBM products in the DRAM industry is increasingly turning attention toward advanced packaging technologies like hybrid bonding. Major HBM manufacturers are considering whether to adopt hybrid bonding for HBM4 16hi stack products but have confirmed plans to implement this technology in the HBM5 20hi stack generation.

Hybrid bonding offers several advantages when compared to the more widely used micro-bumping. Since it does not require bumps, it allows for more stacked layers and can accommodate thicker chips that help address warpage. Hybrid-bonded chips also benefit from faster data transmission and improved heat dissipation.

Kingston Technology Company, Inc., a world leader in memory products, announced the upcoming release of Kingston FURY Renegade DDR5 CUDIMMs, compatible with Intel's new 800-series chipset (formerly codenamed Arrow Lake). Intel's 800-series chipset is the first platform to utilize Clock Drivers on CUDIMMs (Clocked Unbuffered Dual Inline Memory Modules). At 6400 MT/s DDR5, JEDEC mandates the inclusion of a Client Clock Driver (CKD) on UDIMMs and SODIMMs. This component buffers and redrives the clock signal from the processor, enhancing signal integrity to the module. To distinguish these advanced modules from standard DDR5 UDIMMs and SODIMMs, JEDEC has designated them as CUDIMMs and CSODIMMs, respectively.

Kingston FURY Renegade RGB and non-RGB CUDIMM modules start at an overclocked speed of 8400 MT/s and are available as 24 GB single modules and 48 GB dual channel kits. Since CUDIMMs and UDIMMs share the same 288-pin connector, Kingston FURY UDIMMs with XMP and EXPO profiles are also compatible with Intel 800-series motherboards. However, it's recommended to verify compatibility through the motherboard manufacturer's QVL (Qualified Vendor List) or by checking the Kingston Configurator for supported speeds and capacities.

Kioxia Corporation, a world leader in memory solutions, today announced that the company's research papers have been accepted for presentation at IEEE International Electron Devices Meeting (IEDM) 2024, a prestigious international conference to be held in San Francisco, USA, from December 7th to 11th.

Kioxia is committed to the research and development of semiconductor memory, which is indispensable for the advancement of AI and the digital transformation of society. Beyond its state-of-the-art three-dimensional (3D) flash memory technology BiCS FLASH, Kioxia excels at research in emerging memory solutions. The company is constantly striving to meet the needs for future computing and storage systems with innovative memory products.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced upcoming raw card designs currently in development in JEDEC's JC-45 Committee for DRAM Modules in collaboration with the JC-40 and JC-42 Committees. These raw card memory device standards are intended for use in client computing applications such as laptops and desktops and will be supported by related appendix specifications. The forthcoming raw cards will also complement two DDR5 Clock Driver standards published earlier this year: JESD323: DDR5 Clocked Unbuffered Dual Inline Memory Module (CUDIMM) Common Specification and JESD324: DDR5 Clocked Small Outline Dual Inline Memory Module (CSODIMM) Common Specification.

Integrating a Clock Driver (CKD) into a DDR5 DIMM provides numerous advantages, particularly in memory stability and performance, and enhances signal integrity and reliability at high speeds. By regenerating the clock signal locally on the DIMM, a CKD ensures stable operation even at elevated clock speeds. With a DDR5 CKD, DIMM data rates can be increased from 6400 Mbps to 7200 Mbps in the initial version of the standard, and targeting up to 9200 Mbps in future versions.

Advantech, a global leader in embedded computing, is excited to announce the release of the SQRAM CXL 2.0 Type 3 Memory Module. Compute Express Link (CXL) 2.0 is the next evolution in memory technology, providing memory expansion with a high-speed, low-latency interconnect designed to meet the demands of large AI Training and HPC clusters. CXL 2.0 builds on the foundation of the original CXL specification, introducing advanced features such as memory sharing, and expansion, enabling more efficient utilization of resources across heterogeneous computing environments.

Memory Expansion via E3.S 2T Form Factor
Traditional memory architectures are often limited by fixed allocations, which can result in underutilized resources and bottlenecks in data-intensive workloads. With the E3.S form factor, based on the EDSFF standard, the CXL 2.0 Memory Module overcomes these limitations, allowing for dynamic resource management. This not only improves performance but reduces costs by maximizing existing resources.