At the 2019 Flash Memory Summit, Realtek announced a slew of new Flash memory controllers targeting a diversity of devices, spanning from USB flash drives to USB external SSDs, M.2/U.2 NVMe internal SSDs. Leading the pack is the RTS5771, the company's new flagship NVMe SSD controller that features a PCI-Express 4.0 x4 host interface, 8 NAND Flash channels with up to 1,200 MT/s speeds per channel, NVMe 1.3, and DRAM cache. This becomes the third PCIe gen 4.0-capable client-segment NVMe SSD controller after the Phison E16 and the Marvell 88SS132x.

The RTS5765DL is its cost-effective sibling, which has PCI-Express 3.0 x4 host interface, just 4 NAND Flash channels, and is DRAM-less, allowing manufacturers to design cost-effective SSDs. It still has 1,200 MT/s bandwidth per channel, so drives that implement it can offer sequential speeds similar to premium drives from the previous generation. The new RTL9210 is a bridge chip that converts USB 3.1 gen 2 (10 Gbps) to PCI-Express 3.0 x2, ideal for cost-effective external NVMe SSDs. The controller also features an integrated RGB LED logic, so drive designers can bling up their creations.

SK Hynix Inc. announced today that it has developed HBM2E DRAM product with the industry's highest bandwidth. The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity compared to the previous HBM2. SK Hynix's HBM2E supports over 460 GB (Gigabyte) per second bandwidth based on the 3.6 Gbps (gigabits-per-second) speed performance per pin with 1,024 data I/Os (Inputs/Outputs). Through utilization of the TSV (Through Silicon Via) technology, a maximum of eight 16-gigabit chips are vertically stacked, forming a single, dense package of 16 GB data capacity.

SK Hynix's HBM2E is an optimal memory solution for the fourth Industrial Era, supporting high-end GPU, supercomputers, machine learning, and artificial intelligence systems that require the maximum level of memory performance. Unlike commodity DRAM products which take on module package forms and mounted on system boards, HBM chip is interconnected closely to processors such as GPUs and logic chips, distanced only a few µm units apart, which allows even faster data transfer.

Samsung Electronics, Ltd., has taken its leadership position in the memory market a step further today by announcing support of the Samsung PM1733 PCIe Gen4 Solid State Drive (SSD) and high density RDIMM and LRDIMM dynamic random access memory (DRAM) for the AMD EPYC 7002 Generation Processors. AMD launched the 2nd Gen AMD EPYC processor in San Francisco yesterday.

"AMD has listened to the needs of its customers in developing the 2nd Gen AMD EPYC processors and has worked closely with us to integrate the best of our cutting-edge memory and storage products," said Jinman Han, senior VP of Memory Product Planning, Samsung Electronics. "With these new datacenter processors, AMD is providing customers with a processor that enables a new standard for the modern datacenter."

SK Hynix Inc. announced today that its DRAM and Enterprise SSD (eSSD) solutions, including the up-to-date 1Y nm 8 Gb DDR4 DRAM, have been fully tested and validated with the new AMD EPYC 7002 Generation Processors, which were unveiled during AMD's launch event on August 7. The Company has worked closely with AMD to provide memory solutions fully compatible with the 2nd Gen AMD EPYC Processors, targeting high performance data centers.

The SK Hynix DDR4 DRAM supports the maximum speed of 3200 Mbps of the 2nd Gen EPYC Processors, which will increase memory performance more than 20% compared to the 1st Gen AMD EPYC Processors. The Company's various DDR4 DRAM solutions, based on the 1Xnm and 1Y nm technology with density of 8 Gb and 16 Gb, have been fully tested and validated with the 2nd Gen EPYC Processors. SK Hynix provides high-density DIMMs with density over 64 GB to support up to 64 cores per socket in the 2nd Gen EPYC.

SK Hynix also provides a full line-up of SATA and PCIe from 480 GB to 8 TB, which have also been validated and tested with the 2nd Gen EPYC. SK Hynix's eSSD solutions are optimized for the latest data center's read-intensive and mixed workload environment.

Greenliant is now sampling its SATA 6Gb/s NANDrive EX Series ball grid array (BGA) solid state drives (SSDs) to customers that require superior data retention and high program-erase (P/E) cycles. Designed with Greenliant's EnduroSLC Technology, SATA 6 Gb/s NANDrive EX Series SSDs are capable of performing 50K, 100K and industry-leading 250K+ P/E cycles. EnduroSLC Technology substantially enhances data retention and extends write endurance of 1-bit-per-cell (SLC) SSDs with advanced hardware ECC capabilities and NAND flash management algorithms.

Developed with Greenliant's DRAM-less controller, SATA 6 Gb/s NANDrive has enhanced power loss data protection and offers four times the performance over the previous generation of SATA NANDrive products. SATA 6 Gb/s SSDs support Native Command Queuing (NCQ) up to 32 commands and use advanced NAND management techniques to optimize the device's performance during its lifetime. With faster read/write speeds and available in a wide range of capacities (2 GB - 128 GB), SATA 6 Gb/s NANDrive EX Series is ideal for high-performance computing, industrial, transportation, video and networking applications.

Marvell today released the industry's lowest power PCIe Gen4 NVMe solid-state drive (SSD) controller portfolio. Marvell's newest SSD controllers are designed to meet the need for lower power and higher performance in next-generation data centers and edge devices as artificial intelligence (AI) and 5G gain momentum. This breakthrough technology delivers unparalleled performance in an ultra-compact footprint, leveraging the company's complex system-on-chip (SoC) design expertise and groundbreaking storage IP to help data center, notebook, tablet, gaming and edge computing platform architects advance their solutions for the highly distributed data era.

"Marvell's latest family of storage controllers has been architected to optimally address edge computing and data center pain points of power-performance and capacity-performance," said Nigel Alvares, vice president of marketing for the Flash Business Unit at Marvell Semiconductor, Inc. "With today's launch, we're once again demonstrating Marvell's leadership in storage, delivering the industry's first 4-Channel PCIe Gen4 NVMe SSD controllers with the industry's lowest power consumption that will help revolutionize SSD solutions for the data economy."

SK hynix Inc. today announced financial results for its second quarter 2019 ended on June 30, 2019. The consolidated second quarter revenue was 6.45 trillion won while the operating profit amounted to 638 billion won and the net income 537 billion won. Operating margin for the quarter was 10% and net margin was 8%.

As demand recovery did not meet expectations and price declines were steeper than expected, the revenue and the operating profit in the second quarter fell by 5% and 53%, respectively, quarter-over-quarter (QoQ). DRAM bit shipments increased by 13% QoQ as the Company actively responded to the mobile and PC DRAM markets, where demand growth was relatively high. However, DRAM prices remained weak and the average selling price dropped by 24%. For NAND Flash, the bit shipments increased by 40% QoQ because of demand recovery due to price declines, while the average selling price decreased by 25%.

Prices of DRAM shot up by 20 percent as Japan put in place export curbs that restrict high-technology exports to South Korea, and as Toshiba recovers from a power blackout that temporarily halted production. This could impact prices of end-user products such as PC memory modules, or consumer electronics, such as smartphones, in the coming weeks, as inventories either dry up, or are marked-up at various stages of the supply-chain. The memory industry is inter-dependent between fabrication and packaging units spread across South Korea, Japan, and Taiwan.

Memory and flash industry observer DRAMeXchange reported that spot-pricing of 8-gigabit DDR4 DRAM chips, which is used as a benchmark for DRAM pricing as a whole, closed at USD $3.74 at the end of trading on Friday (19/07). It's up 14.6 percent week-over-week, and 23 percent up pricing as on 5th July. An industry observer who spoke with KBS World notes that the recent hikes are not directly infuenced by the trade-spat between Japan and Korea, but rather a power blackout experienced at a Toshiba DRAM manufacturing facility last month. The observer noted that if the trade-spat affects production at Samsung Electronics or SK Hynix, DRAM prices could "skyrocket."

CORSAIR, a world leader in PC gaming peripherals and enthusiast components, today announced the addition of 32 GB modules to its range of VENGEANCE LPX high-performance DDR4 memory, allowing PC builders to equip their systems with more DDR4 memory than ever before. VENGEANCE LPX has long been a premiere choice for custom PC builders looking for high frequencies and ambitious overclocks, and that tradition continues with the launch of 32 GB modules - the first time that such a capacity of premium DRAM has been made widely available to consumers in a standard size DDR4 module.

The new modules feature the same craftsmanship and quality that CORSAIR customers expect from the VENGEANCE LPX name. Thoroughly tested for wide compatibility with most current DDR4 motherboards, designed for high-performance overclocking with a pure aluminium heatspreader, and available in multiple colors to match your system's look, VENGEANCE LPX 32 GB DDR4 modules set the standard for enthusiast memory. Launching in frequencies of 2,400 MHz and 2,666 MHz in kits of 1x, 2x,4x and 8x modules, or 3,000 MHz in kits of 1x and 2x modules, you'll be sure to find a configuration to fit your custom PC and take its memory capacity up to 128 GB on mainstream 4-DIMM slot, and up to 256 GB on high-end desktop 8-DIMM slot motherboards.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 12-gigabit ( Gb) LPDDR5 mobile DRAM, which has been optimized for enabling 5G and AI features in future smartphones. The new mobile memory comes just five months after announcing mass production of the 12 GB LPDDR4X, further reinforcing the company's premium memory lineup. Samsung also plans to start mass producing 12-gigabyte (GB) LPDDR5 packages later this month, each combining eight of the 12 Gb chips, in line with growing demand for higher smartphone performance and capacity from premium smartphone manufacturers.

"With mass production of the 12 Gb LPDDR5 built on Samsung's latest second-generation 10-nanometer (nm) class process, we are thrilled to be supporting the timely launch of 5G flagship smartphones for our customers worldwide," said Jung-bae Lee, executive vice president of DRAM Product & Technology, Samsung Electronics. "Samsung remains committed to rapidly introducing next-generation mobile memory technologies that deliver greater performance and higher capacity, as we continue to aggressively drive growth of the premium memory market."

G.SKILL International Enterprise Co., Ltd., the world's leading manufacturer of extreme performance memory and gaming peripherals, is thrilled to announce the launch of Trident Z Neo DDR4 memory series for the latest AMD Ryzen 3000 series CPUs on AMD X570 platform. Featuring optimized specifications for the new AMD platform, a new sleek dual-tone heatspreader design, and fully customizable RGB lighting, the Trident Z Neo memory series is the ideal DDR4 DRAM for your next AMD gaming system or workstation.

Optimized Performance for AMD Ryzen 3000: Computer systems with AMD Ryzen processors are known for its performance scaling with memory speed, and Trident Z Neo is engineered to achieve optimal performance with the latest AMD Ryzen 3000 series processors on AMD X570 motherboards. Under the latest AMD Ryzen 3000 series platform, DDR4 memory frequency support has increased by leaps and bounds, allowing the X570 chipset platform to run an unprecedented memory speed record of DDR4-5774MHz- the fastest memory speed ever achieved on an AMD platform under extreme liquid nitrogen cooling - as seen in the following CPU-Z validation screenshot with the MSI MEG X570 GODLIKE motherboard.

ADATA Technology (Taiwan Stock Exchange: 3260.TWO), a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories announces that it has upgraded the endurance rating of its industrial-grade 3D TLC solid state drives (SSD) to 3K P/E cycles, bringing their endurance, reliability, and stability up to par with 2D MLC SSDs. Combined with their ability to operate in a wide range of temperatures (-40° C to 85° C), they are excellent solutions that provide the durability and consistency required by applications such as Artificial Intelligence, Internet of Things (IoT), Intelligent Transportation Systems, surveillance systems, data centers, network operations, defense systems, and energy exploration.

The continual improvements in NAND Flash design and manufacturing, as well as the ever-changing demands of the market, have driven 3D NAND to become a popular memory solution across many industries. Despite its growing prominence, 3D NAND has had two major deficiencies, namely the ability to operate in extreme temperatures and achieve higher endurance ratings. To fill this gap, ADATA has upgraded its industrial-grade 3D TLC SSDs to an endurance rating of 3K P/E cycles, which makes them comparable to 2D MLC SSDs. At the same, ADATA 3D TLC SSDs are also designed to operate in a wide temperature range (-40° C to 85° C), delivering a memory solution that is long-lasting, robust, and reliable.

Trendforce, via its market analysis division DRAMeXchange, announced yesterday that it expected DRAM pricing to fall even more than previously estimated. The motive behind this is Huawei's ban following the US-China trade war, which will limit Huawei's ability to deliver its server and, especially, smartphone products. With companies being banned from trading with the Chinese firm, a voracious consumer of the US-tied DRAM production has just evaporated without a trace. This means increasing inventories amidst a freeze in demand due to uncertainty in the overall markets, which will obviously tip the supply-demand balance.

This has led TrendForce to officially adjust its outlook for 3Q DRAM prices from its original prediction of a 10% decline to a widened 10-15% decline, with an additional 10% decline in the fourth quarter. And of course, after prices hit rock bottom, they can only go up, which is why DRAMeXchange expects prices can only increase - and DRAM manufacturers' outlook improve - come 2020. Gear up for those DRAM upgrades this year, folks.

Last year, with the introduction of the Intel Z390 chipset, there was a spate of so-called "double capacity DIMMs" or DC DIMMs, tall memory modules with two rows of DRAM chips, which added up to 32 GB per DIMM. You needed a Z390 platform and a 9th generation Core processor that supported up to 128 GB of memory, to use these things. With the introduction of 16 Gb DDR4 DRAM chips by both Micron and Samsung, JEDEC-compliant 32 GB unbuffered DIMMs of standard height are finally possible, and ADATA put together the first of these, shown off at Computex 2019.

The AD4U2666732GX16 is a 32-gigabyte dual-rank unbuffered DIMM made using 16 Gb chips supplied by Micron Technology. The modules tick at JEDEC-standard DDR4-2666 speeds, at a module voltage of 1.2 Volts. ADATA didn't disclose timings. The 16 Gb DRAM chips are made by Micron in an advanced (3rd generation) 10 nm-class silicon fabrication process to achieve the desired transistor-density. 32 GB DIMMs are expected to hit critical-mass in 2H-2019/2020, with the advent of AMD's 3rd generation Ryzen "Matisse," and Intel's "Ice Lake-S" desktop processors. Memory manufacturers are also expected to put out speedy and highly-compatible single-rank 16-gigabyte DIMMs using 16 Gb chips, which could finally make 32 GB dual-channel the mainstream memory configuration, moving up from half a decade of 2x 8 GB.

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today announces that launch of the XPG SPECTRIX S40G RGB gaming SSD. With sustained read/write speeds of up to 3500/3000MB per second, customizable RGB lighting, and a slew of performance enhancing features, the XPG SPECTRIX S40G is a no brainer for those seeking amazing performance and exceptional reliability.

The S40G supports the NVMe standard and utilizes the high-speed PCIe Gen3 x4 interface to let users enjoy sustained read/write speeds of up to 3500/3000 MB per second. What's more, sporting next-generation 3D Flash memory it offers a leap forward in capacity, efficiency, and durability. Also with the M.2 2280 specification, it supports the latest Intel and AMD platforms. These capabilities make the S40G ideally suited for gamers, PC enthusiasts, overclockers, and graphics professionals. User can customize the SSD's look with programmable RGB lighting effects. They can set up patterns, pulse speed, lighting intensity, and more. Control is a snap with XPG's RGB control software.

Intel was the historic leader in silicon manufacturing and sales from 1993 through 2016, the year it lost its lead to Samsung. The issue wasn't so much to do with Intel, but more to do with market demands at the time - if you'll remember, it was the time of booming DRAM pricing alongside the smartphone demand increase that propagated stiff competition and manufacturers trying to outgun one another in the form of specs. The DRAM demand - and its ridiculous prices, at the time - propelled Samsung towards the top spot in terms of revenue, leaving Intel in the dust.

However, with the decrease in DRAM pricing following the reduce in smartphone demand and increased manufacturing capabilities of semiconductor manufacturers, which flooded the market with product that is being more slowly digested, has led to the drop of the previously-inflated Dram pricing, thus hitting Samsung's revenues enough for Intel to again become "top dog" in the silicon manufacturing world - even as the company struggles with its 10 nm rollout and faced supply issues of their own. As IC Insights puts it, "Intel replaced Samsung as the number one quarterly semiconductor supplier in 4Q18 after losing the lead spot to Samsung in 2Q17. (...) With the collapse of the DRAM and NAND flash markets over the past year, a complete switch has occurred, with Samsung having 23% more total semiconductor sales than Intel in 1Q18 but Intel having 23% more semiconductor sales than Samsung just one year later in 1Q19!".

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today announces that the XPG Overclocking Lab (XOCL) has overclocked the SPECTRIX D60G RGB DDR4 memory module to a frequency of 5634 MT/s, a new record. The previous record was 5608 MT/s. The milestone was achieved with an Intel Core i9 chipset and MSI MPG Z390I GAMING EDGE AC motherboard in an LN2-cooled configuration. The results have been certified and published on HWBOT.

The D60G is built with high-quality chips and a metal heat sink for excellent signal integrity, reliability, and stability, which effectively extends the lifespan of the memory module. What's more, Intel Extreme Memory (XMP) 2.0 profiles make overclocking a snap and enhance system stability. Instead of adjusting individual parameters in BIOS, users can do it right through their PC's operating system.

AMD's 3rd generation Ryzen (3000-series) processors will overcome a vast number of memory limitations faced by older Ryzen chips. With Zen 2, the company decided to separate the memory controller from the CPU cores into a separate chip, called "IO die". Our resident Ryzen memory guru Yuri "1usmus" Bubliy, author of DRAM Calculator for Ryzen, found technical info that confirms just how much progress AMD has been making.

The third generation Ryzen processors will be able to match their Intel counterparts when it comes to memory overclocking. In the Zen 2 BIOS, the memory frequency options go all the way up to "DDR4-5000", which is a huge increase over the first Ryzens. The DRAM clock is still linked to the Infinity Fabric (IF) clock domain, which means at DDR4-5000, Infinity Fabric would tick at 5000 MHz DDR, too. Since that rate is out of reach for IF, AMD has decided to add a new 1/2 divider mode for their on-chip bus. When enabled, it will run Infinity Fabric at half the DRAM actual clock (eg: 1250 MHz for DDR4-5000).

Apacer releases an all-new DDR4 desktop PC gaming memory with ultra-wide angle RGB lighting effects, built specifically for desktop gaming, overclocking and MOD enthusiasts. Designed with unique RGB lighting, high-class aluminum alloy heat sink, and based on the world's best industrial memory module and storage technologies, this state-of-the-art memory solution uses ICs that were meticulously selected for high gaming requirements and supports Intel XMP 2.0 for one-button overclocking. NOX RGB DDR4 has a mysterious, minimalist design for top gamers to unleash mysterious forces and enjoy ultimate gaming and overclocking experiences.

Apacer NOX RGB DDR4 uses unique ultra-wide angle RGB lighting effects featuring exquisitely carved lighting bar with natural, flowing RGB colors displayed in full view. NOX RGB DDR4 is certified by the software of major motherboard manufacturers such as ASUS AURA sync, GIGABYTE RGB Fusion, MSI Mystic Light Sync and ASRock Polychrome Sync. The RGB memory light effects can be easily controlled and synchronized with system lights, so that gamers have the freedom to configure light designs according to personal preferences to display unique styles, completely making your rig truly yours in bright fashion, day or night.

Yuri "1usmus" Bubliy, who practically wrote the book on AMD Ryzen memory overclocking, presents DRAM Calculator for Ryzen v1.5.0, the latest version of the most powerful tool available to help you overclock memory on PCs powered by AMD Ryzen processors. The biggest feature-addition is MEMBench, a new internal memory benchmark that tests performance of your machine's memory sub-system, and can be used to test the stability of your memory overclock. Among the other feature-additions include the "Compare Timings" button, which gives you a side-by-side comparison of your machine's existing settings, with what's possible or the settings you've arrived at using the app.

Motherboards vary by memory slot topology, and DRAM Calculator for Ryzen can now be told what topology your board has, so it can better tune settings such as procODT and RTT. The author also de-cluttered the main screen to improve ease of use. Among the under-the-hood changes are improved SoC voltage prediction for each generation of Ryzen. The main timing calculation and prediction algorithms are improved with the addition of the likes of GDM prediction. Also added is support for 4-DIMM system configurations. A bug in which the imported HTML profiles were automatically assumed to be specific to Samsung b-die mode. A number of minor changes were made, detailed in the change-log below.

DOWNLOAD: DRAM Calculator for Ryzen by 1usmus

PATRIOT , a global leader in performance memory, SSDs, gaming peripherals, and flash storage solutions, today has announced the release of their latest Signature Premium series line of DDR4 UDIMM memory, which are Non-ECC unbuffered memory designed to deliver outstanding quality, rock solid stability and great performance expected by today's mainstream PC builder.

Signature Premium DDR4 memory provides a wide range of capacities allowing the builder to choose from a variety of speeds and capacities starting with 4GB single modules up to 32GB dual channel kits. The minimalist heat spreader design offers great heat dissipation and is made from high-purity aluminum. Signature Premium DDR4 series modules offer reliability to those who upgrade or build systems for work or business and are cost effective too.

SK Hynix Inc. today announced that it held a ceremony celebrating the completion of an expanded fabrication plant (or 'C2F') in Wuxi, China, on April 18th. C2F is an expansion of the existing DRAM production line, C2, in Wuxi. The Company decided to expand its production line in 2016 in order to solve the shortage of production space due to technology migration. About 500 people attended the ceremony, including Li Xiaomin, Party Secretary of Wuxi, Guo Yuanqiang, Vice Governor of Jiangsu, Choi Youngsam, Consul-General in Shanghai, Lee Seok-hee, Chief Executive Officer of SK Hynix, and representatives of clients and business partners.

SK Hynix signed a contract with Wuxi City, Jiangsu Province, China, in 2004 to establish a local factory and completed the production line (C2) in 2006 to start producing DRAM. C2 is the Company's first 300mm FAB and has played a major role in SK Hynix's growth to date. However, with technology scaling, the number of processes has increased and the equipment has become larger, which led to the shortage of the cleanroom space. SK Hynix, therefore, has invested a total of 950 billion KRW from June 2017 to April 2019 to secure additional production space.

SK Hynix Inc. today announced financial results for its first quarter 2019 ended on March 31, 2019. The consolidated first quarter revenue was 6.77 trillion won while the operating profit amounted to 1.37 trillion won and the net income 1.1 trillion won. Operating margin for the quarter was 20% and net margin was 16%.

Because of a faster-than-expected price decline and lower shipments due to slowing memory demand, the revenue and the operating profit in the first quarter fell by 32% and 69%, respectively, quarter-over-quarter (QoQ). Due to seasonal slowdown and conservative server purchases, DRAM bit shipments decreased by 8% QoQ. The average selling price dropped by 27%. For NAND Flash, the average selling price decreased by 32% due to high inventory levels and intensifying competition among suppliers. The bit shipments declined by 6% QoQ.

HyperX, the gaming division of Kingston Technology, Inc., today announced the release of two new high speed Predator DDR4 memory kits in 4266 MHz and 4600 MHz frequency versions. The new frequency options will be available as 8GB modules in kits of two and include a black aluminum heat spreader and black PCB to complement the look of the latest PC builds by system builders and DIY PC enthusiasts.

"The HyperX team is excited to offer Predator DDR4 for the next generation of PC enthusiasts who want the best performance from their systems," said Kristy Ernt, DRAM business manager, HyperX. "As HyperX continues to support the world of gaming and esports, the community sees us as a trusted leader for high speed memory in the gaming hardware industry."

Samsung Electronics Q1-2019 preliminary reads like a horror story to investors, as the company posted its worst drop in operating-profit in over four years. Operating income fell 60 percent in the quarter ending March 2019, to about USD $5.5 billion, beating Bloomberg analysts who had predicted a 56 percent drop. Sluggish sales to IoT major Amazon, smartphone major Apple, and other handset makers, compounded by swelling inventory in the supply chain, has triggered sharp drops in DRAM prices that were offsetting critically low NAND flash prices. Demand for Samsung SoCs (application processors) is also on the decline.

Samsung is betting heavily on the success of its Galaxy S10 family of smartphones to recover from losses faced in the three component markets. Prices of DRAM prices fell 22 percent YoY, and NAND flash continues to slide by roughly that much, at 23 percent. NAND flash prices have been on a continuous decline over the past 3 years. DRAM prices, on the other hand, rallied in that period, and it's only now that it posted its first price-drop since 2016. NAND flash prices are expected to slide further down, as oversupply and failure of newer technologies like QLC taking off, hurt NAND flash manufacturers.