Intel Tuesday unveiled a new portfolio of data-centric solutions consisting of 2nd-Generation Intel Xeon Scalable processors, Intel Optane DC memory and storage solutions, and software and platform technologies optimized to help its customers extract more value from their data. Intel's latest data center solutions target a wide range of use cases within cloud computing, network infrastructure and intelligent edge applications, and support high-growth workloads, including AI and 5G.

Building on more than 20 years of world-class data center platforms and deep customer collaboration, Intel's data center solutions target server, network, storage, internet of things (IoT) applications and workstations. The portfolio of products advances Intel's data-centric strategy to pursue a massive $300 billion data-driven market opportunity.

AMD will launch its 3rd generation Ryzen 3000 Socket AM4 desktop processors in 2019, with a product unveiling expected mid-year, likely on the sidelines of Computex 2019. AMD is keeping its promise of making these chips backwards compatible with existing Socket AM4 motherboards. To that effect, motherboard vendors such as ASUS and MSI began rolling out BIOS updates with AGESA-Combo 0.0.7.x microcode, which adds initial support for the platform to run and validate engineering samples of the upcoming "Zen 2" chips.

At CES 2019, AMD unveiled more technical details and a prototype of a 3rd generation Ryzen socket AM4 processor. The company confirmed that it will implement a multi-chip module (MCM) design even for their mainstream-desktop processor, in which it will use one or two 7 nm "Zen 2" CPU core chiplets, which talk to a 14 nm I/O controller die over Infinity Fabric. The two biggest components of the IO die are the PCI-Express root complex, and the all-important dual-channel DDR4 memory controller. We bring you never before reported details of this memory controller.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm) eight-gigabit (Gb) Double Data Rate 4 (DDR4) DRAM for the first time in the industry. In just 16 months since it began mass producing the 2nd-generation 10nm-class (1y-nm) 8Gb DDR4, development of 1z-nm 8Gb DDR4 without the use of Extreme Ultra-Violet (EUV) processing has pushed the limits of DRAM scaling even further.

As 1z-nm becomes the industry's smallest memory process node, Samsung is now primed to respond to increasing market demands with its new DDR4 DRAM that has more than 20-percent higher manufacturing productivity compared to the previous 1y-nm version. Mass production of the 1z-nm 8Gb DDR4 will begin within the second half of this year to accommodate next-generation enterprise servers and high-end PCs expected to be launched in 2020.

Micron has curiously been releasing client-segment SSDs these recent weeks. The company's main brand was focused on enterprise products, while subsidiary brands Crucial and Ballistix catered to the client-segment. Following up on its late-February launch of the 1300-series client-segment SSDs, Micron unveiled the even faster 2200-series. These drives ditch Silicon Motion-sourced controllers in favor of a new controller Micron designed in-house. Built in the M.2-2280 form-factor with PCI-Express 3.0 x4 interface, taking advantage of the NVMe protocol. This in-house controller is mated with Micron's 64-layer 3D TLC NAND flash, cushioned by its own LPDDR4 DRAM cache.

Available in capacities of 256 GB, 512 GB, and 1 TB, the Micron 2200 is rated to offer sequential transfer rates of up to 3000 MB/s reads, with up to 1600 MB/s writes, up to 240,000 IOPS 4K random reads, and up to 210,000 IOPS 4K random writes, with an endurance rating of 75 TB, 150 TB, and 300 TB, for the 256 GB, 512 GB, and 1 TB variants, respectively. Micron-exclusive features also make their way, such as native power-loss data-protection, and TCG Opal SED. The company hasn't revealed pricing or availability for these drives.

DigiTimes is reporting that three of the major DRAM and Flash players in the industry - Micron, Samsung and SK Hynix - are expected to drop an astonishing 26% sequentially on 1Q19 and 29% YoY for 1Q19. The combined revenue drop for the three DRAM and Flash semiconductor giants comes in the face of seasonality and decreasing prices, and the decline continues an already negative 4Q18, which saw a decrease of 18% sequentially and 26% from a year earlier.

With memory pricing facing a continuous decline in recent times, clients are taking a pondered approach towards ordering from manufacturers - an expectation of future savings being the main factor for this. Demand, however, is expected to pick up in 2H19, due to increased demand from end customers, following price-cuts from manufacturers and improved specifications on end-products.

A report via EETimes slates Intel's own working MRAM (Magnetoresistive Random-Access Memory) is ready for production in high-volume manufacturing. MRAM is a nonvolatile memory technology, meaning that it retains information even if there is a change in powerstate (ie, power loss), meaning that it's more akin to a storage device than to, say, RAM.

But why does MRAM matter, really? Well, MRAM is being developed as a long-term candidate to a universal memory solution, replacing both DRAM (a volatile memory technology) and NAND flash (a nonvolatile one), since node scaling with these technologies is becoming increasingly harder. MRAM promises better-scaling (at the foundry level) processes, with much higher yield rates. The fact that MRAM has been demonstrated to be able to achieve 1 ns settling times, better than the currently accepted theoretical limits for DRAM, and much higher write speeds (as much as thousands of times faster) compared to NAND flash.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD209-5, Low Power Double Data Rate 5 (LPDDR5). LPDDR5 will eventually operate at an I/O rate of 6400 MT/s, 50% higher than that of the first version of LPDDR4, which will significantly boost memory speed and efficiency for a variety of applications including mobile computing devices such as smartphones, tablets, and ultra-thin notebooks. In addition, LPDDR5 offers new features designed for mission critical applications such as automotive. Developed by JEDEC's JC-42.6 Subcommittee for Low Power Memories, LPDDR5 is available for download from the JEDEC website.

With the doubling of memory throughput over the previous version of the standard (LPDDR5 is being published with a data rate of 6400 MT/s, compared to 3200 MT/s for LPDDR4 at its publication in 2014), LPDDR5 promises to have an enormous impact on the performance and capabilities of the next generation of portable electronic devices. To achieve this performance improvement, LPDDR5 architecture was redesigned; moving to 16Banks programmable architecture and multi-clocking architecture.

Advantech, a leading global flash storage and memory solutions provider in the embedded market, announces the industry's most comprehensive lineup of 32GB DDR4 unbuffered DIMM memory. Advantech SQRAM offers single 32GB DRAM modules in various DIMM types including SODIMM, UDIMM, ECC DIMM, and extremely robust Rugged DIMM with guaranteed wide temperature operation for high performance computing in applications such as networking and military.

As the global IoT market gradually embraces big data and edge computing, demand for high data and performance processing is increasing. SQRAM 32 GB unbuffered DIMM memory uses Samsung's 16 Gb 2666 MT/s IC chips for high reliability requirements in mission critical applications. SQRAM 32 GB wide temperature operation (-40~85 °C) Rugged DIMM offers extreme vibration resistance, plus ECC checking to ensure data accuracy.

Remember that story we brought you regarding the United States government, via its Department of Commerce, banning all exports from national companies to China-based Fujian Jinhua Integrated Circuits Ltd? Well, fast-forward three months, and the Financial Times is reporting, citing two sources close to the matter, that the ban has been too much for the company to take, limiting its ability to import needed parts and tools for its DRAM production. This is tough news for a company that was investing towards finishing construction of a $5.7 billion factory in China's Fujian Province.

If the Financial Times is true, this is one potential player in the DRAM market that goes out the proverbial window. The original reasons given by the Department of Commerce for the export ban referred to the company being supported by "likely U.S.-origin technology", reportedly of Micron origin. Well, now it seems as if it isn't being supported at all.

The PC5 DDR5 main memory standard could enter the market by 2020, according to SK Hynix research fellow Kim Dong-Kyun. The first such memory standard will be DDR5-5200, which offers nearly double the bandwidth of DDR4-2666. "We are discussing several concepts of the post DDR5," he said. "One concept is to maintain the current trend of speeding up the data transmission, and another is to combine the DRAM technology with system-on-chip process technologies, such as CPU," he added, without offering any additional information. SK Hynix had in 2018 developed a working prototype of a 16-gigabit (2 GB) DDR5 DRAM chip ticking at 5200 MT/s, at 1.1 Volts. A 64-bit wide memory module made with these chips could offer bandwidth of 41.6 GB/s.

SK Hynix is developing its own innovations that could make its DDR5 chips more advanced than the competition without going off-standard. "We have developed a multi-phase synchronization technology that enables keeping the voltage during a high-speed operation in a chip at a low level by placing multiple phases within the IP circuit, so the power used on each phase is low but the speed is high when combined," Kim said. He also mentioned that development of the DDR6 PC memory standard is already underway, with the design goals of doubling bandwidth and densities over DDR5. Advancements in DRAM are propelled not just by the PC ecosystem, but also handhelds and self-driving car electronics.

Transcend Information Inc., a leading manufacturer of storage and multimedia products, is proud to announce the MTE220S PCIe M.2 Solid-State Drive. This SSD utilizes PCI Express Gen3 x4 interface and is compatible with NVM Express (NVMe) specifications. Utilizing this interface means never-before-seen transfer speeds of 3,500 MB/s read and 2,800 MB/s write are now a reality. Using 3D chips and packing into a M.2 2280 form factor, the MTE220S SSD is the must-have for gaming enthusiasts and high-end applications.

Transcend's MTE220S SSD comes equipped with DDR3 DRAM cache memory. This means that commonly used programs load much faster, and boot time is greatly reduced. Utilizing SLC caching, the MTE220S SSD can reach astonishing read/write speeds of 3,500 MB/s and 2,800 MB/s, respectively, and 4K Random performance is also significantly improved. In addition to speeds, reliability is also enhanced with the Low Density Parity Check code in place.

ASUS today announced that its Z390 motherboards will support a maximum DRAM capacity of 128GB via a UEFI BIOS update that's being rolled out from today on the ASUS support site. ASUS will bring this increased memory support to all Z390 motherboards via additional BIOS updates that will be available soon.

Previously, support for 128GB of DRAM was available only on high-end desktop (HEDT) motherboards with eight DIMM slots, such as the Intel X299 platform. Intel recently updated its memory reference code (MRC), enabling the memory controller in 9th Gen Intel Core processors to increase the supported capacity of each DIMM from 16GB to 32GB, resulting in a total system memory capacity of 128GB when populated with two DIMMs per channel (2DPC) on both memory channels. This increased memory support gives users more flexibility for running memory-intensive applications and tasks.

Intel today unveiled a killer new product with which it hopes to bring about as big a change to mobile computing as Ultrabook did some eight years ago. This effort is a combination of a new mobile computing form-factor codenamed "Project Athena," and an SoC at its heart, codenamed "Lakefield." Put simply, "Lakefield" is a 10 nm SoC that's integrated much in the same way as today's ARM SoCs, which combine IP from various vendors onto a single PoP (package-over-package) Foveros die.

The biggest innovation with "Lakefield" is its hybrid x86 multi-core CPU design, which combines four Atom-class low-power cores, with one Core-class "Sunny Cove" core, in a setup akin to ARM's big.LITTLE. Low-power processing loads are distributed to the smaller cores, while the big core is woken up to deal with heavy loads. The SoC also integrates a Gen 11 iGPU core, partial components to accelerate 802.11ax WLAN, 5G, an PoP DRAM and NVMe storage devices. The reference motherboard based on "Lakefield" is barely larger than an M.2 SSD!

Capellix is an innovation new RGB LED design by Corsair, which has significantly reduced size, power-draw, while offering increased brightness and durability, compared to conventional SMD LEDs. You can read all about these in our older article. The first product to implement Capellix is Corsair's upcoming flagship memory series, the 2019 Dominator Platinum RGB. These modules each feature 12 individually addressable Capellix aRGB LEDs, which take up significantly lower PCB real-estate than SMD LEDs on older generations of Corsair memory modules.

A silicone diffuser puts out light from these diodes through slits along the sides and top of the modules. The LEDs are fully compatible with Corsair iCUE software, in addition to pretty much any addressable-RGB software. The modules themselves feature hand-binned DRAM chips, cooled by die-cast, micro-arc oxidized anodized aluminium heatspreaders. The first of these could be out in February 2019.

TEAMGROUP is proudly announcing the T-FORCE has done to the apex again, work with world's Korean renown overcloker, SAFEDISK, by using the T-FORCE XTREEM DDR4 4500 MHz modules all the way grabbed the world record of SUPER PI 32m calculation, successfully beat all the powerful professional overclockers from HWBOT and all over the world. This excellent performance of T-FORCE XTREEM made the possibility of completion on SUPER PI 32m calculation within 4 minutes and 5 seconds which is unbelievably amazing!

SUPER PI is a significant DRAM module overclocking benching application, also a way to check the overall module specification stability. This time T-FORCE understands need to show the high performance and stability in front of all the users. Thus works with SAFEDISKset up the test environment including T-FORCE XTREEM DDR4 4500 MHz module, Intel Core i9 9900K "Coffee Lake Refresh" CPU and ASUS ROG Maximus IX Apex motherboard. Without a doubt, the world record has been posted at HWBOT and all over the public platform in front of everyone to be the witness of all this awesome performance record from T-FORCE module.

According to a report from DRAMeXchange, a division of market analytics firm TrendForce, contractor pricing of NAND flash products could drop some further 10% entering 2019 and throughout just the first quarter of the next year. Citing higher than expected but output from NAND manufacturers, who managed to ramp up their 64-bit 3D NAND ad higher-than-expected ratios, and with stagnating smartphone demand, channel quantities' increase will lead to dripping (if not cascading) pricing.

As for the trend in the SSD market, DRAMeXchange expects Client SSD contract prices to fall by nearly 10% in 1Q19, a great boon for customers. With global notebook shipments for 1Q19 estimated to decrease by over 15% QoQ, slowing demand for SSDs will lead to decreasing prices matching demand, despite the increasing SSD adoption rate in the PC market and the memory content upgrades. Long story short, enthusiasts: don't do any Christmas shopping for SSDs, barring some amazing deals that do pop up.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of an update to JESD235 High Bandwidth Memory (HBM) DRAM standard. HBM DRAM is used in Graphics, High Performance Computing, Server, Networking and Client applications where peak bandwidth, bandwidth per watt, and capacity per area are valued metrics to a solution's success in the market. The standard was developed and updated with support from leading GPU and CPU developers to extend the system bandwidth growth curve beyond levels supported by traditional discrete packaged memory. JESD235B is available for download from the JEDEC website.

JEDEC standard JESD235B for HBM leverages Wide I/O and TSV technologies to support densities up to 24 GB per device at speeds up to 307 GB/s. This bandwidth is delivered across a 1024-bit wide device interface that is divided into 8 independent channels on each DRAM stack. The standard can support 2-high, 4-high, 8-high, and 12-high TSV stacks of DRAM at full bandwidth to allow systems flexibility on capacity requirements from 1 GB - 24 GB per stack.

GeIL - Golden Emperor International Ltd. - one of the world's leading PC components and peripheral manufacturers today announced the new additions to their SUPER LUCE RGB SYNC Series DDR4 memory. The new modules are available in three capacities and speeds: 4133 MHz 16 GB (8 GB x2) CL19-19-19-39 1.40 V, 3600 MHz 16GB (8 GB x2) CL16-18-18-36 1.35 V, and 3200 MHz 16 GB (8 GB x2) CL14-14-14-34 1.35V

The 4133 MHz 16 GB (8 GB x2) CL19-19-19-39 1.40 V DDR4 kits can be the overclocker's new favorite with support for most ASUS, GIGABYTE, MSI and ASROCK Z390 and Z370 motherboards as well as giving enthusiasts the room to push their systems to the limit without exception. The 3600 MHz 16GB (8 GB x2) CL16-18-18-36 1.35 V DDR4 kits meets the memory needs for any gaming system using the latest Intel platforms and is an excellent solution for first time overclockers. The 3200 MHz 16 GB (8GBx2) CL14-14-14-34 1.35 V DDR4 kits are compatible with both Intel and AMD AM4 platforms and feature a low latency design to enhance performance and offer the most affordable upgrade option for users.

The Chinese State Administration for Market Regulation has been conducting an anti-monopoly investigation of the global Dynamic RAM market. According to an interview of Wu Zenghou (bureau's head) in the Financial Times, this process has found "massive evidence" against the three companies (Samsung, Hynix, and Micron) that are responsible for the vast majority of this segment. "The anti-monopoly investigation into these three companies has made important progress", points out the investigator. On April these three companies were hit with a price-fixing suit on the same matter in the US, and this investigation seems to confirm those reports.

There is even an older precedent, as Samsung and Hynix were fined both by the US Department of Justice in 2005 and by the European Commission in 2010 on price-fixing allegations. The charges now are similar, and if the companies are found guilty, they could face fines of over $2.5 billion. Some analysts suggest this investigation could be part of the trade war between China and the US, with the former trying to get some leverage pushing the Chinese semiconductor company Fujian Jinhua Integrated Circuit as a bigger player on this market. One that, by the way, is being investigated on allegations of misappropriated trade secrets from Micron. Samsung and SK Hynix have accused China DRAM makers of industrial espionage, too.

G.SKILL International Enterprise Co., Ltd., the world's leading manufacturer of extreme performance memory and gaming peripherals, is launching Trident Z Royal series DDR4 RGB memory kits, featuring a patent-pending full-length crystalline light bar upon a polished heatspreader in gold or silver with stunning 8-zone RGB lighting. The patent of the crystalline design on PC components has been applied for across major countries. Available in high-speed specifications, the Trident Z Royal is first available from DDR4-3000MHz to DDR4-4600MHz at launch. With the perfect marriage of RGB lighting and speed, the Trident Z Royal is the ideal memory kit for any high-class system build.

Trident Z Royal is the latest addition to the Trident Z flagship family, featuring a crown jewel design. Meticulously crafted to display just the right amount of light refraction, the crystalline light bar scatters the RGB colors in a magnificent display of LED lighting. Complementing the patented high-class light bar design, polished aluminum heatspreaders of gold or silver colors cools the memory modules in the award-winning classic Trident Z tri-fin design. And to help maintain the pristine shine of the heatspreaders, each Trident Z Royal memory kit comes with a piece of microfiber cloth to let you wipe away fingerprints and dust.

SK Hynix announced that it has developed 16 Gb DDR5 DRAM, the industry's first DDR5 to meet the JEDEC standards. The same 1Ynm process technology used for the recently-developed 1Ynm 8Gb DDR4 DRAM was applied to the new DRAM, giving an industry-leading competitive edge for the Company.

DDR5 is a next-generation DRAM standard that offers ultra-high speed and high density with reduced power consumption as compared to DDR4, for use in data-intensive applications such as big data, artificial intelligence, and machine learning.

Western Digital Corporation, a data infrastructure leader, today announced it is extending the breadth and depth of its data center portfolio into the rapidly evolving in-memory computing market segment. The new Ultrastar DC ME200 Memory Extension Drive is the company's first product that enables customers to better optimize in-memory system capacity/performance for running demanding applications that drive today's real-time analytics and business insights.

"Today's requirement for faster analytics, data processing, cloud services and high-performance computing (HPC) is increasing demand for in-memory computing across a variety of industries, including healthcare, telecommunications and IT, and retail," said Ashish Nadkarni, group vice president, IDC. "By expanding in-memory capacity, the Ultrastar memory drive helps alleviate the high cost of adding extra DRAM, as well as addresses the physical limitations of available DIMM slots, where scaling is either cost-prohibitive or nearly impossible."

SK Hynix Inc. announced that it has developed 1Ynm 8Gb (Gigabits) DDR4 (Double Data Rate 4) DRAM. The productivity of this product is increased by 20% and the power consumption reduced by more than 15%, compared to the previous generation, 1Xnm DRAM. It also supports a data transfer rate of up to 3,200Mbps, which is the fastest data processing speed in DDR4 interface. The Company adopted a '4-Phase Clocking' scheme, which doubles the clock signal to boost data transfer speed and stability.

SK Hynix also introduced its own 'Sense Amp. Control' technology to reduce power consumption and data errors. With this technology, the Company successfully enhanced the performance of the sense amplifier. SK Hynix improved the transistor structure to lower the possibility of data errors, a challenge that accompanies technology shrink. The Company also added a low-power power supply to the circuit to prevent unnecessary power consumption.

Micron Technology, Inc., today announced that it has begun mass production of the industry's highest-capacity and first monolithic 12Gb low-power double data rate 4x (LPDDR4x) DRAM for mobile devices and applications. This latest generation of Micron's LPDDR4 memory brings key improvements in power consumption while maintaining the industry's fastest LPDDR4 clock speeds, thereby delivering advanced performance for next-generation mobile handsets and tablets. In addition, Micron's 12Gb LPDDR4x doubles memory capacity to offer the industry's highest-capacity monolithic LPDDR4 without increasing the footprint compared to the previous generation product.

The exponential increase in usage of compute and data-intensive mobile applications such as artificial intelligence (AI), augmented reality (AR) and 4K video has been accompanied with demands by mobile users to maximize battery life and performance and increase capacity. Next-generation mobile devices that integrate multiple high-resolution cameras and increasingly use AI for image optimization also require higher DRAM capacities to support these features.

As the industry transitions towards deployment of 5G mobile technology, the memory subsystem in mobile handsets will have to support these dramatically higher data rates and the associated processing of data in real-time. New applications built upon 5G technology will also be able to leverage the increased capabilities of the memory subsystem to enable new and immersive user experiences.

A DRAM market pricing watch report from DRAMeXchange, a division of Trendforce, has just outed a prediction for DRAM price drops towards 2019 and into the same year. The report points to already-decreased by 10.14% pricing (US$34.5 in 3Q18 to the current US$31) for 4GB PC DRAM modules in the market, relative to the previous quarter, as a sign for continued drops. 8 GB DRAM module pricing has declined by 10.29%, signaling an increased inventory of those parts.

The report also states that suppliers have just reached the inflection point for oversupply, despite continued efforts from manufacturers to artificially decrease manufacturing to keep a strain on demand. The report further states that "The ASP in the whole DRAM market is forecast to fall by as much as around 20% YoY in 2019, according to DRAMeXchange's latest analysis. After reaching peak profit in 3Q18, DRAM suppliers are now optimizing their costs so that they will have a soft landing in 2019 as prices are marked down every quarter."