Samsung Electronics, one of the largest manufacturers of DRAM and NAND flash memory, is poised to increase its production of DRAM. The company is bolstered by expansion of two of its DRAM manufacturing plants, located in Hwasung and Pyeongtaek, South Korea. The company is re-purposing a portion of its 2D NAND flash line at its Hwasung plant to produce DRAM. The new production line will begin its output from Q1-2018. The Pyeongtaek plant has been seeing similar activity where DRAM manufacturing clean-rooms are being built on the plant's second floor.

It's only in the second half of 2018 when end-users could expect Samsung's increased DRAM output to have any effect on prices of PC memory. The PC industry is not the only consumer of DRAM, as a larger share of it is consumed by the mobile industry (smartphones, tablets). DRAM inventories have been under tremendous strain over the past three quarters, which have forced PC memory prices to surge by 80-100 percent and beyond.

DRAMeXchange, a division of TrendForce, has come forward with the expected announcement that DRAM output in 2018 likely won't be enough to fully satisfy supply. This has been the case for some time now. However, what started with simple insufficient output that could contain the explosion of DRAM capacity in smartphones seems to now be turning into a conscious decision by the three top memory manufacturers. Samsung, Micron, and SK Hynix are seemingly setting output at a lower than required level so as to artificially inflate pricing due to low supply. TrendForce themselves say so, in that these suppliers "(...) have opted to slow down their capacity expansions and technology migrations so that they can keep next year's prices at the same high level as during this year's second half. Doing so will also help them to sustain a strong profit margin."

DRAM production is expected to increase by 19,6% in 2018; however, this ratio is lower than the expected growth in demand, which is being pegged at 20,6%. This means 2018 is likely to see increased constraint in the supply channels (whereas 2018 was actually expected to see a slight relief in supply issues). This means that pricing will either stabilize or tend to increase from current levels. To be fair, semiconductor production isn't as simple as hitting a "increase production by 10x" button; reports say that all three players are contending with insufficient room to expand output on their production lines, and getting a new production facility online isn't a trivial effort - neither in funds, nor on time. However... All involved companies would much rather keep prices as they are than see them being brought down by oversupply.

Kingston Technology Company, Inc., a world leader in memory storage products and technology solutions, announces tomorrow that it celebrates its 30th year in the business as an innovative technology hardware provider for computers and devices. Kingston was co-founded on October 17, 1987, by CEO John Tu and COO David Sun. The two co-founders continue to guide the company and remain very active in day-to-day operations.

The entrepreneurial spirit of both owners and the success of the company have been recognized globally through the years. Kingston's core tenets of respect, loyalty, flexibility and integrity have created an exemplary corporate culture - one that guides its relationships with customers, partners and vendors, and to which Kingston owes its success. The company continues to be the largest supplier of DRAM modules among non-semiconductor manufacturers and a leading maker of Flash memory products - especially SSDs - where it has become a dominant force among consumers and organizations alike looking to upgrade existing systems and data centers.

Kingston manufactured just one product when it started in 1987 and has steadily and strategically evolved as a company by controlling as much of the production cycle as possible - from initial wafer processing through finished product - for both DRAM and Flash. The company has done this through expansion, strategic investments, partnerships and adapting to industry needs as early as possible.

ADATA Technology, a leading manufacturer of highperformance DRAM modules and NAND Flash products,today launched industrial-grade ISDD336 SD cards and IUDD336 microSD cards. Diversifying ADATA offerings for industrial storage, all models feature wide temperature tolerance as well as shock, vibration, and humidity resistance well beyond consumer product ratings. ISDD336 and IUDD336 cards utilize durable and long-lasting 3D MLC NAND Flash, and are fully compliant with SD 3.0/SPI specifications, making them reliable choices for embedded systems. Performance across the board reaches 95MB/s read and 90MB/s write. Customers can choose ISDD336 SD cards in 16GB to 256GB capacities, and IUDD336 microSD cards in 16GB to 128GB capacities.

ADATA continues to increase its focus on industrial-grade products, with more offerings for users. As the SD standard has clear advantages for industrial customers thanks to its compact form factor, durability, and low power requirements, ADATA strives to provide more choice in the SD space. Thus, ISDD336 cards arrive in SD form factor while IUDD336 cards deliver the same quality and performance in microSD.

CORSAIR, a world leader in PC components high-performance gaming hardware and enthusiast memory, today announced its fastest ever kit of DDR4 memory, VENGEANCE LPX 16GB (2x8GB) 4,600MHz. Co-developed with leading motherboard manufacturer ASRock and its X299 OC Formula motherboard, this latest addition to the CORSAIR range of VENGEANCE LPX memory takes Intel XMP 2.0 performance on the Intel X299 platform and Intel Core X-Series Processors to new heights, able to achieve 4,600MHz with just a single setting.

Built using hand-sorted industry-leading Samsung B-die IC's and running performance timings of CL19-26-26-46 at 1.5V, VENGEANCE LPX 4,600MHz is ready for enthusiasts, overclockers or those who simply demand the very fastest components, to push their system's performance to the limit. High-speed memory doesn't stop at 16GB and CORSAIR also leads the way when it comes to high-speed DDR4 at a wide range of capacities. With more Intel XMP certified kits than every other DRAM manufacturer combined, you'll find record setting kits of VENGEANCE LPX at 32GB (4x8GB) 4,133MHz, 64GB (8x8GB) at 4,200MHz, 32GB (2x16GB) at 4,000MHz and for those who need the maximum in speed and capacity, 128GB (8x16GB) at 3,800MHz.

ADATA Technology, a leading manufacturer of highperformance DRAM modules and NAND Flash products,today launched the industrial-grade IMSS314 3D NAND SSD. Available in 3D MLC (32GB/64GB) and 3D TLC (128GB/256GB/512GB), the new model uses the compact mSATA form factor and SATA 6Gps connectivity. It has been purpose-designed for onsite deployment with industrial, enterprise, and organizational users. It offers speeds up to 500MB/s read and 400MB/s write, and can easily tolerate a wide temperature range, extreme shocks, vibration, and humidity. The IMSS314 delivers highly reliable and durable embedded storage for applications where speed and responsiveness are important. The availability of more affordable 3D TLC versions caters to users that prioritize large capacities, and stays true to the ADATA pledge of providing more options.

Intel is preparing to expand its Skull Canyon line of high-performance NUC compact desktops, with new models based on its upcoming "Coffee Lake-U" silicon. The company is preparing variants based on 28W TDP Core i3, Core i5, and Core i7 ultra-low power processors, and 300-series chipset. The Core i3 based parts offer 4-core/4-thread CPU configuration, while the Core i5 and Core i7 ones offer 4-core/8-thread configurations. One of these could even feature a large onboard graphics core cushioned by on-package eDRAM L4 cache. The three "Coffee Lake-U" based NUCs could be released in Q2-2018, which is quite a wait.

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash products,today launched the industrial-grade ICFS314 CFast storage card. Designed for demanding applications and harsh or high traffic environments, the ICFS314 uses 3D MLC NAND to increase durability and longevity. As a CFast 2.0 product, it delivers data in the SATA III (6Gbps) protocol, capable of 550MB/s read and 520MB/s write (more than twice CFast 1.0 speeds). The ICFS314 consumes just over 2W, making it exceedingly power efficient, and is available in a wide range of capacities from 32GB to 512GB.

The shift to more efficient, higher density, and longer lasting 3D NAND is well under way in SSDs. Enterprise and industrial users now also have the option of benefitting from 3D NAND advantages on CompactFlash/CFast products, such as the ICFS314. Stacked or layered NAND improves on its planar predecessor in every way, from speed to lifespan. The ICFS314 arrives in up to 512GB of meticulously-sorted 3D MLC NAND.

The DRAM industry is experiencing an acute shortage of various classes of GDDR memory (graphics DDR), which could affect graphics card prices come Holiday. Supplier quotes for various graphics memory components have risen by as much as 30.8% in August, from an average of USD $6.50 in July, to $8.50. Top graphics memory suppliers Samsung and SK Hynix have committed a bulk of their inventories to manufacturers of servers and mobile handsets, which triggered the price rally. Samsung is the largest supplier of graphics memory, with a 55 percent market-share, followed by SK Hynix at 35 percent, and Micron Technology at 10 percent.

DRAM prices began to rise in the second half of 2016 and have maintained a strong upward momentum through the first half of 2017, according to data from DRAMeXchange, a division of TrendForce. The average contract price of PC DRAM modules rose by nearly 40% sequentially in the first quarter to US$24 and then by more than 10% sequentially in the second quarter to US$27. Furthermore, the average contract price of PC DRAM modules increased by about 4.6% between this June and July. DRAMeXchange's price forecast for this year's second half indicates and steady and incremental gains as the general trend in the DRAM market.

Around one year ago, GALAX introduced their Gamer DDR4 memory kits, which counted with LED illumination - these were not RGB parts, mind you, and instead, you had to choose between either Red, Green or Blue LEDs with matching color lid. But the times, they are a-changing, and nowadays, pure LED illumination isn't enough: gamers want permanent customization ability, so they can keep cycling kaleidoscopic colors around them at a whim.What the GALAX Gamer III line-up does well is that their RGB prowess comes absent of any unsightly extra cables for separate RGB power; like the G.Skill Trident Z, these make do without any extra wiring. However, where these fall short is on frequency and timings. It's almost as if the added LEDs reduce DRAM performance, since these kits will (at least for now) only be available in 2666 MHz frequency kits with CL 15... Which, for a company such as GALAX, with its over the top GPUs, seems slightly anemic. GALAX has yet to announce which motherboard manufacturers will support RGB controls, pricing, or actual availability dates (so, all the important bits.)

ADATA Technology, a leading manufacturer of highperformance DRAM modules and NAND Flash products,today launched industrial-grade ISSS314 solid state drives in 3D MLC and 3D TLC versions. All models can withstand a wide temperature range, extreme shocks and vibrations, as well as humidity to meet the needs of industrial users. Using hardened and carefully sorted components, ISSS314 SSDs consume just 2.5W to lower operating costs while providing speedy 560 MB/s read and 520 MB/s write. They are offered in 3D MLC and 3D TLC NAND plus capacities ranging from 32GB to 512 GB in order to better cover and serve as many budgets and needs as possible.

The increased durability and power efficiency of stacked NAND Flash compared to older planar NAND offers very appealing advantages in applications that require non-stop and long term use. The ISSS314 range has an MTBF of 2 million hours, which is 25% more than comparable 2D NAND drives. At the same time, they consume just 2.5W per drive while reaching 512 GB in capacity. Modest power draw translates into major electricity savings over the life of the drive, especially in large installations where many units are needed. Across the range, ISSS314 drives reach 560 MB/s read and 520 MB/s write.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is increasing the production volume of its 8-gigabyte (GB) High Bandwidth Memory-2 (HBM2) to meet growing market needs across a wide range of applications including artificial intelligence, HPC (high-performance computing), advanced graphics, network systems and enterprise servers.

"By increasing production of the industry's only 8GB HBM2 solution now available, we are aiming to ensure that global IT system manufacturers have sufficient supply for timely development of new and upgraded systems," said Jaesoo Han, executive vice president, Memory Sales & Marketing team at Samsung Electronics. "We will continue to deliver more advanced HBM2 line-ups, while closely cooperating with our global IT customers."

ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash products, today announced that its upcoming XPG SPECTRIX D40 RGB DDR4 has been certified compatible with ASUS AURA Sync software. This allows users of ASUS motherboards to personalize the RGB lighting elements built into D40 modules with choice of color range, lighting sequence, and more. SPECTRIX D40 modules have been optimized for the Intel X299 platform with a starting speed of 2666MHz. They are also compatible with AMD AM4 motherboards. Designed for gamers, overclockers, and case modders, SPECTRIX D40 DDR4 modules provide more options and customization features and support the trend towards builds that incorporate sophisticated RGB and LED.

Graphene has been hailed for some time now as the next natural successor to silicon, today's most used medium for semiconductor technology. However, even before such more exotic solutions to current semiconductor technology are employed (and we are still way off that future, at least when it comes to mass production), engineers and researchers seem to be increasing their focus in one specific part of computing: internal communication between components.

Typically, communication between a computer's Central Processing Unit (CPU) and a system's memory (usually DRAM) have occurred through a bus, which is essentially a communication highway between data stored in the DRAM, and the data that the CPU needs to process/has just finished processing. The fastest CPU and RAM is still only as fast as the bus, and recent workloads have been increasing the amount of data to be processed (and thus transferred) by orders of magnitude. As such, engineers have been trying to figure out ways of increasing communication speed between the CPU and the memory subsystem, as it is looking increasingly likely that the next bottlenecks in HPC will come not through lack of CPU speed or memory throughput, but from a bottleneck in communication between those two.

If you didn't already know, semiconductor production plants are some of the most aseptic locations you can usually find deployed around the world (remember those pictures of engineers wearing full-body suits and face masks?) As is often the case with cutting edge technology, there is usually no place for variable conditions; precision-level manufacturing requires the most stable, predictable working and manufacturing conditions that can possibly be achieved. When something goes wrong, say, when the nitrogen gas dispensing system of a major semiconductor manufacturing facility acts up and releases uncalibrated amounts of gas, things can go very wrong, very quickly.

That is exactly what happened with Micron's Fab 2 in Taiwan. Fab 2 was a result of Micron's Inotera acquisition, and production from this fab accounts for around 5.5% of the global DRAM supply (125,000 wafers per month) Due to the nitrogen gas dispenser malfunction, both wafers and equipment were contaminated, which Trendforce says reduced Inotera's production capability by 60,000 wafers. Now, granted, Micron has already officially come out and say that this was all a "minor accident" which "had no impact" on business. However, one has to consider that Fab 2 mainly specializes in production of LPDDR4 memory, which is essentially used in mobile phone environments - Apple being the company's biggest consumer of DRAM chips. With iPhone 8 production supposedly in full swing, if I were Micron, I would certainly prefer to take a bite out of my DRAM supplies than admit production capacity reduction and shortages to such a partner. If Apple were to take its business elsewhere, Micron would be hard-pressed to find another customer of that caliber.

ADATA Technology, a leading manufacturer of high performance DRAM modules, NAND Flash products, and mobile accessories today launched the HD710 Pro durable external hard drive alongside an addition to the best-selling HD650 range. The HD710 Pro improves on its HD710 predecessor by exceeding IP68 dust and waterproofing plus military-grade shock resistance. It enhances the safeguarding of stored data against accidents, damage, and the rigors of active lifestyles, and is available in four colors. The HD710 Pro offers up to 4TB capacity. The refreshed HD650 arrives in a stylish light blue over black color scheme, also providing 4TB capacity - a new milestone for unpowered USB external hard drives. Together, these two new USB 3.1 models bolster the ADATA external hard drive portfolio, giving consumers more choice.

DRAM prices have been high for quite some time now, due to a general increased demand over a slowly improving supply capability from manufacturers. Pricing of DRAM has been increasing (to the tune that if I wanted to double my memory capacity, I would have to pay double of what I paid a mere 11 months ago.) NAND pricing has been affected as well, with newer technologies such as 3D NAND not having a relevant impact on end user pricing as was expected, since tight supply and growing demand means process-level savings are dwarfed by the increasing prices on the balance of supply and demand.

Most of our woes can be traced back to high-end smartphones, which make use of up to 6 GB of RAM and have copious amounts of NAND memory. Now, reports are coming in that due to the iPhone 8's impending launch, supply is even tighter, with several firms being either unable to secure the amount of Ram they are looking for, or having to order in significant advance (futures speculation anyone?) Reuters is reporting that some clients have moved to 6-month supply agreements for their DRAM and NAND purchases, accepting higher prices than the customary quarterly or monthly deals, to make sure they get enough memory chips for their products.

Patriot took the opportunity to tease an upcoming line of LED-lighted DRAM modules. Details on these were extremely scarce (actually, nonexistent), which could mean that Patriot is either playing its cards extremely close to its chest, or that specifications haven't been finalized as of yet. However, it seems the final design for the modules is, and that's what Patriot was proud enough to show. However, I think it's a given that these are DDR4 modules.

I have to say I really like the design on these heat-spreaders; they're both understated and bold, which isn't that much of a frequent combination. Expect more details on these memory sticks to come in the coming months.

GeIL showed off its AMD Ryzen-optimized EVO-X AMD Edition DDR4 memory, with integrated RGB LED lighting. The modules feature Ryzen-friendly DRAM chips (although we're not sure if they're Samsung b-die), coupled with an SPD profile that's readable by prominent third-party one-click optimization standards such as ASUS DOCP, MSI A-XMP, and XMP-translation. The modules have been tested for stability in sustaining their advertised clocks and timings on motherboards of various brands.

The RGB LED lighting on the EVO-X series supports various RGB LED control software such as ASUS/ASRock Aura Sync, MSI Mystic Light RGB, BIOSTAR Vivid LED DJ, and GIGABYTE RGB Fusion. You can also manually set the color and brightness physically on the module itself, using a slider button-set called "Sliding Hot Switch." The EVO-X AMD Edition runs at DDR4-3466 MHz, with timings of 16-18-18-38. They are available in module densities of 8 GB, and in dual-channel kits of 16 GB. The modules are available in white and black heatspreader colors. The company could launch quad-channel kits in the wake of the Ryzen Threadripper TR4 platform.

You've probably heard of AMD's AGESA updates by now - the firmware updates that are ironing out the remaining kinks in AMD's Ryzen platform, which really could have used a little more time in the oven before release. However, kinks have been disappearing, the platform has been maturing and evolving, and AMD has been working hard in improving the experience for consumers and enthusiasts alike. As a brief primer, AGESA is responsible for initializing AMD x86-64 processors during boot time, acting as something of a "nucleus" for the BIOS of your motherboard. Motherboard vendors take the core capabilities of AGESA updates and build on them with their own "secret sauce" to create the BIOS that ultimately populate your motherboard of choice. The process of cooking up BIOS updates built on the new AGESA will vary from manufacturer to manufacturer, but AMD's Robert Hallock says you should be seeing BIOSes based on this version halfway through the month of June - if your vendor isn't already providing a Beta version of some kind.

This new AGESA update code, version 1.0.0.6, should be just up the alley of enthusiasts, however, in that it adds a grand total of 26 new parameters for memory configuration, improving the compatibility and reliability of DRAM, especially for memory that does not follow the industry-standard JEDEC specifications (e.g. faster than 2667, manual overclocking, or XMP2 profiles). Below you'll find the 26 parameters that were introduced.

TechPowerUp and G.Skill Memory bring you three more reasons to take the AMD Ryzen leap, with the "Game Faster with Flare X" Giveaway. Up for grabs are three G.Skill Flare X 16 GB (2x 8GB) dual-channel DDR4-3200 memory kits, which are based on Samsung b-die DRAM chips, and are recommended by AMD for the best performance on its Ryzen series desktop processors. The Flare X series kits are renowned for reliably sustaining DDR4-3200 speeds on Ryzen machines, which have a direct impact on their performance, since DRAM clock is synced with the clock speed of the Infinity Fabric interconnect between the two CCX quad-core units on Ryzen processors. The giveaway is open worldwide.For more information, and to participate, visit this page.

Early on in Intel's 3D XPoint teasers and announcements, the company planned to have this memory integrated not only as a system cache solution or SSD replacement, but also as a potential substitute for DRAM memory. The objective: to revolutionize the amount of DRAM memory a given system can carry, at a much lower price per GB, with a somewhat acceptable performance penalty. Intel describes the current DRAM implementation as too small, too expensive, and too unstable (read: data loss on power loss) to continue being on top of the memory food chain. This is where the 3D Xpoint DIMM implementation can bear fruits, by offering significantly higher amounts of storage at much lower pricing, while keeping attractive bandwidth and latency performance. DRAM will still be used for system-critical operations and booting, albeit in lower capacities, and will be used side by side with these 3D XPoint DIMM slots, which will take in the bulk of the work.

This kind of usage for Intel's 3D XPoint also delivers an interesting side-effect: since this memory is persistent (which means that data isn't lost when the power is turned off,) interruption or loss of power won't erase the work in memory. At the same time, this means that this kind of DRAM-substitute memory requires some security precautions DRAM doesn't, since anyone with direct physical access to the stick could just remove one and take it with all the data inside. Even though a 2018 time to market seems a little to optimistic, considering all the changes this implementation would require from adopters, the technology is definitely promising enough to tempt users to make the jump.

South Korean DRAM and NAND flash giant SK Hynix updated its product catalog to feature its latest GDDR6 memory, besides HBM2. The company had April announced its first GDDR6 memory products. The first GDDR6 memory chips by SK Hynix come in 8 Gb (1 gigabyte) densities, and data-rates of 14 Gbps and 12 Gbps, with DRAM voltages of 1.35V. The company is giving away small quantities of these chips for product development, mass production will commence soon, and bulk availability is slated for Q4-2017. This would mean actual products implementing these chips could be available only by very-late Q4 2017, or Q1-2018.

A graphics card with 14 Gbps GDDR6 memory across a 256-bit memory bus (8 chips) features 448 GB/s of memory bandwidth. A card with 384-bit (12 chips), should have 672 GB/s at its disposal. Likewise, the 12 Gbps memory chips offer 384 GB/s in 256-bit (8-chip) setups, and 576 GB/s in 384-bit (12-chip) setups. Meanwhile, SK Hynix also updated its HBM2 catalog to feature a 32 Gb (4 gigabyte) HBM2 stack, with a clock speed of 1.60 Gbps. The 2.00 Gbps stack which featured in the Q4-2016 version of this catalog is no longer available. At 1.60 Gbps, a GPU with four stacks has 819.2 GB/s of memory bandwidth. A chip with two stacks, such as the purported "Vega 10" prototype that has made several media appearances, hence has 409.6 GB/s.

Samsung could be on the verge of a historic dethroning of Intel as the dominant chipmaker in the IC world, if a recent report from IC Insights is to be believed. The report shows Samsung actually exceeding Intel's semiconductor sales in 2Q 2017, no doubt spurred on by mobile market growth and the proliferation of ARM based SOCs manufactured by Samsung.

Intel has held the dominant position for nearly a quarter century as its x86 architecture powered most PCs and notebooks/netbooks since 1993. The number of components they sell is not just limited to CPUs either: Intel is a provider of chips for everything from networking to thermal sensors, for Samsung to compete with such a giant in the semiconductor market at all (let alone exceed their sales) is quite a feat indeed.