Micron Technology, Inc., (Nasdaq:MU) today announced results of operations for its first quarter of fiscal 2011, which ended December 2, 2010. For the first quarter, the company had net income attributable to Micron shareholders of $155 million, or $0.15 per diluted share, on net sales of $2.3 billion. The results for the first quarter of fiscal 2011 compare to net income of $342 million, or $0.32 per diluted share, on net sales of $2.5 billion for the fourth quarter of fiscal 2010, and net income of $204 million, or $0.23 per diluted share, on net sales of $1.7 billion for the first quarter of fiscal 2010.

In the company's Memory segment (which excludes Numonyx and other non-reportable segments), revenue from sales of DRAM products was 19 percent lower in the first quarter of fiscal 2011 compared to the fourth quarter of fiscal 2010 due to a 23 percent decrease in average selling prices partially offset by a 5 percent increase in unit sales volume. Revenue from sales of NAND Flash products was up slightly in the first quarter of fiscal 2011 compared to the fourth quarter of fiscal 2010 due to a 20 percent increase in unit sales volume partially offset by a 15 percent decrease in average selling prices. The company's gross margin for its Memory segment was 26 percent in the first quarter of fiscal 2011 compared to 37 percent in the fourth quarter of fiscal 2010, primarily due to the decreases in average selling prices, partially offset by decreases in manufacturing costs.

Numonyx B.V. introduced a set of innovative products today based on the new class of memory technology called phase change memory (PCM). The new devices deliver higher performance, endurance and simplicity for wired and wireless communications, consumer electronics, PCs, and other embedded applications.

The new embedded memory products blend many attributes associated with flash memory, as well as RAM and EEPROM, while delivering new capabilities in a single device. Introduced as the newly branded Numonyx Omneo PCM, today's new products promise up to 300 times faster write speeds and ten times more write endurance than today's flash memory.

Micron Technology, Inc., and Numonyx Holdings B.V. announced today that the companies have signed a definitive agreement under which Micron has agreed to acquire privately held Numonyx in an all-stock transaction valuing Numonyx at approximately $1.27 billion USD.

Under the terms of the agreement, Micron will issue 140 million Micron common shares to Numonyx shareholders, Intel Corporation, STMicroelectronics, N.V. and Francisco Partners. Up to 10 million additional Micron common shares will be issued ratably to Numonyx shareholders to the extent the volume weighted average price of Micron shares for the 20 trading days, ending two days prior to the close of the transaction, ranges between $7.00 and $9.00 per share.

Intel Corporation and Numonyx B.V. announced a key breakthrough in the research of phase change memory (PCM), a new non-volatile memory technology that combines many of the benefits of today's various memory types. For the first time, researchers have demonstrated a 64Mb test chip that enables the ability to stack, or place, multiple layers of PCM arrays within a single die. These findings pave the way for building memory devices with greater capacity, lower power consumption and optimal space savings for random access non-volatile memory and storage applications.

The achievements are a result of an ongoing joint research program between Numonyx and Intel that has been focusing on the exploration of multi-layered or stacked PCM cell arrays. Intel and Numonyx researchers are now able to demonstrate a vertically integrated memory cell - called PCMS (phase change memory and switch). PCMS is comprised of one PCM element layered with a newly used Ovonic Threshold Switch (OTS) in a true cross point array. The ability to layer or stack arrays of PCMS provides the scalability to higher memory densities while maintaining the performance characteristics of PCM, a challenge that is becoming increasingly more difficult to maintain with traditional memory technologies.

Samsung Electronics Co., Ltd. and Numonyx B.V. today announced they are jointly developing market specifications for Phase Change Memory (PCM) products, a next generation memory technology that will help enable makers of feature-rich handsets and mobile applications, embedded systems* and high-end computing devices to meet the increasing performance and power demands for platforms loaded with content and data. Creating common hardware and software compatibility for PCM products should help simplify designs and shorten development time, enabling manufacturers to quickly transition to high-performance, low-power PCM products from both companies.

Phase change memory produces very fast read and write speeds at lower power than conventional NOR and NAND flash memory, and allows for bit alterability normally seen in RAM.

"Our joint efforts with Numonyx will enable a more secure path for introducing PCM into the mobile environment," said SeiJin Kim, vice president, mobile memory technology planning and enabling, Samsung Electronics. "We anticipate that PCM will eventually be a major addition to our family of memory products, one that will nicely compliment our other mobile memory solutions and ultimately increase our leadership in the industry," he added.

Hynix Semiconductor Inc, Numonyx B.V. and Phison Electronics Corp. today announced that they have signed a collaboration agreement to jointly develop controllers for the next generation of managed-NAND solutions based on the newly released JEDEC eMMC 4.4 industry specification. The collaboration is expected to speed the delivery of the industry's most advanced eMMC specification available, helping to manage and simplify high-capacity storage requirements and improve the overall system-level performance of wireless and embedded applications.
Under this agreement, Phison, Hynix and Numonyx will leverage their respective competencies to develop controllers used in combination with a variety of NAND flash products. Phison will exclusively supply the jointly developed controllers to Hynix and Numonyx, which will enhance their respective NAND flash memory solutions portfolio.

Hynix Semiconductor and Numonyx B.V. today announced a five-year agreement to expand its joint development programs for the fast-growing NAND flash memory segment. The companies will broaden NAND product lines and bring future product and technology innovations designed to address challenges facing NAND technology over the next five years.

Intel Corporation today announced that the company has finalized and closed its transaction with STMicroelectronics and Francisco Partners to create a new independent semiconductor company Numonyx B.V. that will design, develop and manufacture NOR and NAND flash memory products. As part of the transaction, Intel has transferred the assets associated with its NOR flash memory business and certain assets related to the company's phase change memory initiatives to Numonyx in exchange for 45.1 percent ownership in Numonyx. ST Microelectronics acquired a 48.6 percent ownership interest in Numonyx. Francisco Partners acquired a 6.3 percent ownership interest in exchange for a cash investment of $150 million.