HyperX, the gaming division of Kingston Technology, Inc., today announced the release of new and updated speeds and capacities for HyperX Predator DDR4 RGB and HyperX FURY DDR4 RGB memory modules and kits. Featuring memory kits up 256 GB and speeds up to 4600MHz1, the Predator DDR4 RGB and FURY DDR4 RGB memory modules are designed to pass rigorous certification test procedures and are Intel XMP certified and AMD certified Ready for Ryzen.

HyperX Predator DDR4 delivers fast frequencies and low latencies with speeds up to 4800MHz1 and latencies from CL12 to CL19. Predator DDR4 utilizes a black aluminium heat spreader and matching black PCB to complement the look of the latest PC builds. Predator memory is available in 8 GB, 16 GB and 32 GB single modules and in kits of two, four, and eight.

PNY Technologies Asia Pacific Limited Technologies, the world's leading brand of extreme performance memory,NAND Flash products and professional/gaming graphic cards is pleased to announce the latest addition of its PC Memory assortment by adding the XLR8 Gaming RGB DDR4 Desktop Memory line-up.

The XLR8 Gaming RGB line provides a dynamic experience for gamers, modders and enthusiasts alike combining RGB customization with overclocking capability, XRL8 RGB DRAM uses selected aluminium alloy heat spreader with state of the art surface finish technique and design, create the extraordinary look and feel.

SK hynix announced that it has started the full-scale mass-production of high-speed DRAM, 'HBM2E', only ten months after the Company announced the development of the new product in August last year. SK hynix's HBM2E supports over 460 GB (Gigabyte) per second with 1,024 I/Os (Inputs/Outputs) based on the 3.6 Gbps (gigabits-per-second) speed performance per pin. It is the fastest DRAM solution in the industry, being able to transmit 124 FHD (full-HD) movies (3.7 GB each) per second. The density is 16 GB by vertically stacking eight 16 Gb chips through TSV (Through Silicon Via) technology, and it is more than doubled from the previous generation (HBM2).

HBM2E boasts high-speed, high-capacity, and low-power characteristics; it is an optimal memory solution for the next-generation AI (Artificial Intelligence) systems including Deep Learning Accelerator and High-Performance Computing, which all require high-level computing performance. Furthermore, it is expected to be applied to the Exascale supercomputer - a high-performance computing system which can perform calculations a quintillion times per second - that will lead the research of next-generation basic and applied science, such as climate changes, bio-medics, and space exploration.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its third quarter of fiscal 2020, which ended May 28, 2020. "Micron's exceptional execution in the fiscal third quarter drove strong sequential revenue and EPS growth, despite challenges in the macro environment," said Micron Technology President and CEO Sanjay Mehrotra. "We are ramping the industry's most advanced DRAM technology into production and have delivered more than 75% of our NAND volume as high-value solutions, supported by record SSD revenue in the quarter. Our portfolio momentum positions us exceedingly well to leverage the long-term growth across our end markets."

2021 is poised to mark a banner year for global fab equipment spending with 24 percent growth to a record US$67.7 billion, 10 percent higher than the previously forecast US$65.7 billion, and all product segments promising solid growth rates, according to the second-quarter 2020 update of the SEMI World Fab Forecast report. Memory fabs will lead worldwide semiconductor segments with US$30 billion in equipment spending, while leading-edge logic and foundry is expected to rank second with US$29 billion in investments.

The 3D NAND memory subsegment will help power the spending spree with a 30 percent jump in investments this year before tacking on 17 percent growth in 2021. DRAM fab investments will surge 50 percent next year after declining 11 percent in 2020, and fab spending on logic and foundry, mainly leading edge, will trace a similar but more muted trajectory, rising 16 percent 2021 after an 11 percent drop this year.

GELID Lumen offers an easy way of adding RGB into your PC. It features the double-side vest heatsink to enhance DRAM cooling and the RGB module with a standard 3-Pin Fan connector that can be attached to any motherboard. The RGB functions are fully automatic and don't require external hardware or software to set lighting modes.

Made of high-grade components, Lumen supports all types and form-factors of DDR2/DDR3/DDR4 RAM modules designed for desktops. It ensures fast installation and perfectly fits high-performance DRAM to boost overclocking capabilities and energize your gaming rig with spectacular RGB lighting.

Micron Technology, Inc., together with Motorola, today announced integration of Micron's low-power DDR5 (LPDDR5) DRAM into Motorola's new motorola edge+ smartphone, bringing the full potential of the 5G experience to consumers. Micron and Motorola worked in close collaboration to enable the edge+ to reach 5G network speeds that require maximum processing power coupled with high bandwidth memory and storage.

With 12 gigabytes (GB) of industry-leading Micron LPDDR5 DRAM memory, motorola edge+ delivers a smooth, lag-free consumer experience. The new phone takes advantage of the faster data speeds and lower latency of 5G to increase the performance of cloud-based applications such as gaming and streaming entertainment.

GDP, a company specializing in the creation of tiny laptops designed for gaming, has just announced the latest addition to its family of tiny notebooks - the GDP Win Max gaming laptop. This model is an 8-inch gaming laptop packing a lot for its size. On the outside, this laptop is equipped with joysticks on both sides, so there is even an option to directly play games using these joysticks instead of the built-in keyboard. The display of the device is an IPS screen that features a 1280×800 resolution, resulting in a 16:10 aspect ratio of the display. What's more important, however, is what is under the hood of the small body.

It is powered by Intel's latest Ice Lake CPU - the Intel Core i5-1035G7. Being a 4 core/ 8 threaded CPU with Gen11 Iris Plus 940 graphics it is accompanied by 16 GB of LPDDR4X RAM and 512 GB SSD. GDP has provided some of the benchmark results of this configuration which you can check out below, however, please take these with a grain of salt. As far as I/O goes, this small laptop is rather well equipped with plenty of ports. There is one Thunderbolt 3 port to connect to external GPU is it is needed. There is one USB Type-C 3.1 Gen2 port and two USB Type-A 3.1 Gen1 ports for the connection of external peripherals. If you wish to connect the laptop to the outside screen, there are options of HDMI, USB Type-C or Thunderbolt 3 ports for connection. A welcome addition to I/O is the inclusion of the RJ45 connector, meaning that if you have access to ethernet you can easily plug it into this laptop.

ADATA, a leading manufacturer of high-performance DRAM modules, NAND Flash products, gaming products, and mobile accessories,today announces the launch of the XPG SPECTRIX D50 DDR4 RGB memory module. Reaching performance of up to 4800 MHz, sporting a maximum capacity of 32 GB, and featuring an elegant geometric design, the XPG SPECTRIX D50 offers immense performance and minimalist styling gamers, overclockers, and PC enthusiasts will appreciate.

Made with only the highest quality chips and PCBs, the XPG D50 provides ultimate stability, reliability, and speeds of up to 4800 MHz. What's more, it supports the latest Intel and AMD platforms. To ensure all that amazing performance inside is protected from impact, the XPG D50 sports a robust heatsink with a wall thickness of nearly 2 mm for excellent durability. The D50 support Intel XMP 2.0 for hassle-free and stable overclocking without the need to go into BIOS.

Due to the impact of the coronavirus on semiconductor supply and demand, worldwide semiconductor revenue is forecast to decline 0.9% in 2020, according to Gartner, Inc. This is down from the previous quarter's forecast of 12.5% growth.

"The wide spread of COVID-19 across the world and the resulting strong actions by governments to contain the spread will have a far more severe impact on demand than initially predicted," said Richard Gordon, research practice vice president at Gartner. "This year's forecast could have been worse, but growth in memory could prevent a steep decline."

Cadence, a fabless semiconductor company focusing on the development of IP solutions and IC design and verification tools, today posted an update regarding their development efforts for the 5th generation of DDR memory which is giving us some insights into the development of a new standard. The new DDR5 standard is supposed to bring better speeds and lower voltages while being more power-efficient. In the Cadence's blog called Breakfast Bytes, one of Cadence's memory experts talked about developments of the new standards and how they are developing the IP for the upcoming SoC solutions. Even though JEDEC, a company developing memory standards, hasn't officially published DDR5 standard specifications, Cadence is working closely with them to ensure that they stay on track and be the first on the market to deliver IP for the new standard.

Marc Greenberg, a Cadence expert for memory solutions was sharing his thoughts in the blog about the DDR5 and how it is progressing. Firstly, he notes that DDR5 is going to feature 4800 MT/s speeds at first. The initial speeds will improve throughout the 12 months when the data transfer rate will increase in the same fashion we have seen with previous generation DDR standards. Mr. Greenberg also shared that the goals of DDR5 are to have larger memory dies while managing latency challenges, same speed DRAM core as DDR4 with a higher speed I/O. He also noted that the goal of the new standard is not the bandwidth, but rather capacity - there should be 24Gb of memory per die initially, while later it should go up to 32Gb. That will allow for 256 GB DIMMs, where each byte can be accessed under 100 ns, making for a very responsive system. Mr. Greenberg also added that this is the year of DDR5, as Cadence is receiving a lot of orders for their 7 nm IP which should go in production systems this year.

Micron Technologies, in the latest earnings report, announced that they will start shipping High-Bandwidth Memory 2 (HBM2) DRAM. Used for high-performance graphics cards, server processors and all kinds of processors, HBM2 memory is wanted and relatively expensive solution, however, when Micron enters the market of its manufacturing, prices, and the market should adjust for the new player. Previously, only SK-Hynix and Samsung were manufacturing the HBM2 DRAM, however, Micron will join them and they will again form a "big-three" pact that dominates the memory market.

Up until now, Micron used to lay all hopes on its proprietary Hybrid Memory Cube (HMC) DRAM type, which didn't gain much traction from customers and it never really took off. Only a few rare products used it, as Fujitsu SPARC64 XIfx CPU used in Fujitsu PRIMEHPC FX100 supercomputer introduced in 2015. Micron announced to suspend works on HMC in 2018 and decided to devote their efforts to GDDR6 and HBM development. So, as a result, we are seeing that they will launch HBM2 DRAM products sometime this year.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has successfully shipped one million of the industry's first 10 nm-class (D1x) DDR4 (Double Date Rate 4) DRAM modules based on extreme ultraviolet (EUV) technology. The new EUV-based DRAM modules have completed global customer evaluations, and will open the door to more cutting-edge EUV process nodes for use in premium PC, mobile, enterprise server and datacenter applications.

"With the production of our new EUV-based DRAM, we are demonstrating our full commitment toward providing revolutionary DRAM solutions in support of our global IT customers," said Jung-bae Lee, executive vice president of DRAM Product & Technology at Samsung Electronics. "This major advancement underscores how we will continue contributing to global IT innovation through timely development of leading-edge process technologies and next-generation memory products for the premium memory market."

Everspin Technologies, Inc., the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM), today announced an amendment of its Spin-transfer Torque (STT-MRAM) joint development agreement (JDA) with GLOBALFOUNDRIES (GF ), the world's leading specialty foundry. Everspin and GF have been partners on 40 nm, 28 nm, and 22 nm STT-MRAM development and manufacturing processes and have now updated their agreement to set the terms for a future project on an advanced 12 nm FinFET MRAM solution. Everspin is in production of discrete STT-MRAM solutions on 40 and 28 nm, including its award winning 1 Gb DDR4 device. GF recently announced it has achieved initial production of embedded MRAM (eMRAM) on its 22FDX platform.

Micron Technology, Inc., today announced it began sampling the industry's first universal flash storage (UFS) multichip package (uMCP) with low-power DDR5 (LPDDR5) DRAM. The uMCP provides high-density and low-power storage designed to fit on slim and compact midrange smartphone designs.

Micron's new uMCP5 packaging builds on the company's innovation and leadership in multichip form factors. Micron uMCPs combine low-power DRAM with NAND and an onboard controller, using 40% less space compared to a two-chip solution. This optimized configuration saves power, reduces memory footprint and enables smaller and more agile smartphone designs.

GLOBALFOUNDRIES (GF ) today announced its embedded magnetoresistive non-volatile memory (eMRAM) on the company's 22 nm FD-SOI (22FDX ) platform has entered production, and GF is working with several clients with multiple production tape-outs scheduled in 2020. Today's announcement represents a significant industry milestone, demonstrating the scalability of eMRAM as a cost-effective option at advanced process nodes for Internet of Things (IoT), general-purpose microcontrollers, automotive, edge-AI (Artificial Intelligence), and other low-power applications.

Designed as a replacement for high-volume embedded NOR flash (eFlash), GF's eMRAM allows designers to extend their existing IoT and microcontroller unit architectures to access the power and density benefits of technology nodes below 28 nm.

Samsung Electronics, the world leader in advanced memory technology, today announced the market launch of 'Flashbolt', its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximize high performance computing (HPC) systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner.

"With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "Samsung will continue to deliver on its commitment to bring truly differentiated solutions as we reinforce our edge in the global memory marketplace."

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today announces the launch of the XPG Hunter DDR4 memory module. Geared toward PC enthusiasts and gamers, the XPG Hunter delivers all the benefits of DDR4 with remarkable performance and efficiency. It supports XMP 2.0 for easy overclocking and offers great stability, making it ideal for performance seekers - gaming to competitive benchmarking. It comes in U-DIMM and SO-DIMM variants to meet the needs of desktop and notebook users alike.

The XPG Hunter modules are made with high-quality chips selected through a strict filtering process. They are equipped with the finest PCBs and pass rigid reliability and compatibility tests to ensure longevity and rugged durability, which are vital for overclocking, gaming, and extreme benchmarking. The modules deliver high-speed performance of up to 3200 MHz and comes with capacities of 4 GB, 8 GB, 16 GB, or 32 GB to meet the needs of diverse users and budgets.

ChangXin Memory Technologies, a Chinese startup founded in 2016 that was formerly known as "Innotron Memory", now claims that it has become China's first and only domestic DRAM supplier. Following the announcement that it started production of domestic DRAM chips, ChangXin is now reportedly shipping its first DRAM wafers. With an output of around 20000 wafers per month, the company is currently building LPDDR4, DDR4 8Gbit chips using the "10-nanometer class" node, which is supposed to be 18 or 19 nm size in reality.

The company expects to double its wafer output to 40000 wafers per month sometime around Q2 of 2020 when additional expansion facilities will start production. ChangXin plans to soon open two more manufacturing facilities to start manufacturing even more wafers, in addition to its Fab 1. So far ChangXin has laid-out plans to start manufacturing DRAM technology based on stack capacitor, which is different from the usual trench capacitor technology few companies are pursuing.

Thermaltake, the leading PC DIY premium brand for Cooling, Gaming Gear and Enthusiast Memory solutions, today announced the release of the Thermaltake TOUGHRAM RGB DDR4 Memory Series which now comes in a white edition along with new frequencies of 3,200 MHz and 3,600 MHz 2x 8 GB. TOUGHRAM is supported by Intel and AMD platforms and features 10-layer PCB construction, 2oz copper inner layers and 10μ gold fingers, the TOUGHRAM RGB white edition is not only visually appealing, but is also high in performance. The TOUGHRAM RGB White Edition is built with premium fine coating that reveals true elegance from inside out.

The TOUGHRAM RGB DDR4 Memory Series 3,200 MHz and 3,600 MHz white edition is now available for pre-order at the TT Premium website. Please refer to the Thermaltake website or contact your local Thermaltake sales or PR representative for more information on pricing for the Thermaltake TOUGHRAM RGB DDR4 3,200 MHz and 3,600 MHz white edition memory kits.

Micron Technology, Inc., today announced a breakthrough in nonvolatile memory technology with the introduction of the world's fastest SSD, the Micron X100 SSD. The Micron X100 SSD is the first solution in a family of products from Micron targeting storage- and memory-intensive applications for the data center. These solutions will leverage the strengths of 3D XPoint technology and usher in a new tier in the memory-to-storage hierarchy with higher capacity and persistence than DRAM, along with higher endurance and performance than NAND.

"Micron's innovative X100 product brings the disruptive potential of 3D XPoint technology to the data center, driving breakthrough performance improvements for applications and enabling entirely new use cases," said Micron Executive Vice President and Chief Business Officer Sumit Sadana. "Micron is the only vertically-integrated provider of DRAM, NAND and 3D XPoint solutions in the world, and this product continues the evolution of our portfolio towards higher value solutions that accelerate artificial intelligence capabilities, drive faster data analytics and create new insights for our customers."

GLOBALFOUNDRIES (GF), the world's leading specialty foundry, announced today at its Global Technology Conference the availability of 12LP+, an innovative new solution for AI training and inference applications. 12LP+ offers chip designers a best-in-class combination of performance, power and area, along with a set of key new features, a mature design and production ecosystem, cost-efficient development and fast time-to-market for high-growth cloud and edge AI applications.

Derived from GF's existing 12nm Leading Performance (12LP) platform, GF's new 12LP+ provides either a 20% increase in performance or a 40% reduction in power requirements over the base 12LP platform, plus a 15% improvement in logic area scaling. A key feature is a high-speed, low-power 0.5 V SRAM bit cell that supports the fast, power-efficient shuttling of data between processors and memory, an important requirement for AI applications in the computing and wired infrastructure markets.

Samsung's B die has been widely known as a good, high performance variant of DRAM memory, loved by overclockers because of its ability to get to a high frequency with relatively low timings. However, B die has been discontinued and now Samsung started offering its replacement in form of the newly developed A die manufactured in 1z nm (1z class) lithography process. Despite the lack of technical details surrounding the new die type, Hardwareluxx has received a tip from its reader about new RAM offering that incorporates A die memory.

The M378A4G43AB2-CVF, as it is called in the listing, is a 32 GB, single dimm DDR4 RAM with operating speed of 2933 MHz and CL21-21-21 timings. This particular offer isn't something to be excited about as the frequency is good, but the timings are quite high for that speed. Given that we don't know where the A die is targeted at, we can speculate that its current aim is at mid-tier systems, where the mediocre performance is okay and the system isn't suffering (performance wise) because of it. Nonetheless this find is quite interesting as it gives first hints at what can we expect in therms of future A die DRAM offerings. Remember, it took some time for B die as well to get to the level of performance we have today, so it is entirely possible that A die will improve and try to aim for greater performance level than it currently has.

Micron Technology, Inc. (Nasdaq: MU), today announced advancements in DRAM scaling, making Micron the first memory company to begin mass production of 16 Gb DDR4 products using 1z nm process technology

"Development and mass production of the industry's smallest feature size DRAM node are a testament to Micron's world-class engineering and manufacturing capabilities, especially at a time when DRAM scaling is becoming extremely complex," said Scott DeBoer, executive vice president of Technology Development for Micron Technology. "Being first to market strongly positions us to continue offering high-value solutions across a wide portfolio of end customer applications."

Thermaltake, the leading PC DIY premium brand for Cooling, Gaming Gear and Enthusiast Memory solutions, today announced the release of Thermaltake WaterRam RGB Liquid Cooling DDR4 Memory 3600 MHz 32 GB, followed by WaterRam RGB 3200 MHz 32 GB & 16 GB, now are all available on the market.

This is the world's first two-way cooling DDR4 memory that offers ultimate flexibility for cooling options, users can either choose liquid cooling or heatsink convection heat dissipation with ease; whilst, enjoying 16.8 M RGB colors across 12 super-bright addressable LEDs for stunning RGB illumination. Built with the highest quality of components to the highest of standards, the WaterRam RGB delivers outstanding gaming performance with stunning RGB lighting effects for effortless sync with 5 V header motherboards from ASUS, GIGABYTE, MSI and AsRock to maximize your RGB ecosystem.