Micron Technologies, in the latest earnings report, announced that they will start shipping High-Bandwidth Memory 2 (HBM2) DRAM. Used for high-performance graphics cards, server processors and all kinds of processors, HBM2 memory is wanted and relatively expensive solution, however, when Micron enters the market of its manufacturing, prices, and the market should adjust for the new player. Previously, only SK-Hynix and Samsung were manufacturing the HBM2 DRAM, however, Micron will join them and they will again form a "big-three" pact that dominates the memory market.

Up until now, Micron used to lay all hopes on its proprietary Hybrid Memory Cube (HMC) DRAM type, which didn't gain much traction from customers and it never really took off. Only a few rare products used it, as Fujitsu SPARC64 XIfx CPU used in Fujitsu PRIMEHPC FX100 supercomputer introduced in 2015. Micron announced to suspend works on HMC in 2018 and decided to devote their efforts to GDDR6 and HBM development. So, as a result, we are seeing that they will launch HBM2 DRAM products sometime this year.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has successfully shipped one million of the industry's first 10 nm-class (D1x) DDR4 (Double Date Rate 4) DRAM modules based on extreme ultraviolet (EUV) technology. The new EUV-based DRAM modules have completed global customer evaluations, and will open the door to more cutting-edge EUV process nodes for use in premium PC, mobile, enterprise server and datacenter applications.

"With the production of our new EUV-based DRAM, we are demonstrating our full commitment toward providing revolutionary DRAM solutions in support of our global IT customers," said Jung-bae Lee, executive vice president of DRAM Product & Technology at Samsung Electronics. "This major advancement underscores how we will continue contributing to global IT innovation through timely development of leading-edge process technologies and next-generation memory products for the premium memory market."

Everspin Technologies, Inc., the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM), today announced an amendment of its Spin-transfer Torque (STT-MRAM) joint development agreement (JDA) with GLOBALFOUNDRIES (GF ), the world's leading specialty foundry. Everspin and GF have been partners on 40 nm, 28 nm, and 22 nm STT-MRAM development and manufacturing processes and have now updated their agreement to set the terms for a future project on an advanced 12 nm FinFET MRAM solution. Everspin is in production of discrete STT-MRAM solutions on 40 and 28 nm, including its award winning 1 Gb DDR4 device. GF recently announced it has achieved initial production of embedded MRAM (eMRAM) on its 22FDX platform.

Micron Technology, Inc., today announced it began sampling the industry's first universal flash storage (UFS) multichip package (uMCP) with low-power DDR5 (LPDDR5) DRAM. The uMCP provides high-density and low-power storage designed to fit on slim and compact midrange smartphone designs.

Micron's new uMCP5 packaging builds on the company's innovation and leadership in multichip form factors. Micron uMCPs combine low-power DRAM with NAND and an onboard controller, using 40% less space compared to a two-chip solution. This optimized configuration saves power, reduces memory footprint and enables smaller and more agile smartphone designs.

GLOBALFOUNDRIES (GF ) today announced its embedded magnetoresistive non-volatile memory (eMRAM) on the company's 22 nm FD-SOI (22FDX ) platform has entered production, and GF is working with several clients with multiple production tape-outs scheduled in 2020. Today's announcement represents a significant industry milestone, demonstrating the scalability of eMRAM as a cost-effective option at advanced process nodes for Internet of Things (IoT), general-purpose microcontrollers, automotive, edge-AI (Artificial Intelligence), and other low-power applications.

Designed as a replacement for high-volume embedded NOR flash (eFlash), GF's eMRAM allows designers to extend their existing IoT and microcontroller unit architectures to access the power and density benefits of technology nodes below 28 nm.

Samsung Electronics, the world leader in advanced memory technology, today announced the market launch of 'Flashbolt', its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximize high performance computing (HPC) systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner.

"With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "Samsung will continue to deliver on its commitment to bring truly differentiated solutions as we reinforce our edge in the global memory marketplace."

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today announces the launch of the XPG Hunter DDR4 memory module. Geared toward PC enthusiasts and gamers, the XPG Hunter delivers all the benefits of DDR4 with remarkable performance and efficiency. It supports XMP 2.0 for easy overclocking and offers great stability, making it ideal for performance seekers - gaming to competitive benchmarking. It comes in U-DIMM and SO-DIMM variants to meet the needs of desktop and notebook users alike.

The XPG Hunter modules are made with high-quality chips selected through a strict filtering process. They are equipped with the finest PCBs and pass rigid reliability and compatibility tests to ensure longevity and rugged durability, which are vital for overclocking, gaming, and extreme benchmarking. The modules deliver high-speed performance of up to 3200 MHz and comes with capacities of 4 GB, 8 GB, 16 GB, or 32 GB to meet the needs of diverse users and budgets.

ChangXin Memory Technologies, a Chinese startup founded in 2016 that was formerly known as "Innotron Memory", now claims that it has become China's first and only domestic DRAM supplier. Following the announcement that it started production of domestic DRAM chips, ChangXin is now reportedly shipping its first DRAM wafers. With an output of around 20000 wafers per month, the company is currently building LPDDR4, DDR4 8Gbit chips using the "10-nanometer class" node, which is supposed to be 18 or 19 nm size in reality.

The company expects to double its wafer output to 40000 wafers per month sometime around Q2 of 2020 when additional expansion facilities will start production. ChangXin plans to soon open two more manufacturing facilities to start manufacturing even more wafers, in addition to its Fab 1. So far ChangXin has laid-out plans to start manufacturing DRAM technology based on stack capacitor, which is different from the usual trench capacitor technology few companies are pursuing.

Thermaltake, the leading PC DIY premium brand for Cooling, Gaming Gear and Enthusiast Memory solutions, today announced the release of the Thermaltake TOUGHRAM RGB DDR4 Memory Series which now comes in a white edition along with new frequencies of 3,200 MHz and 3,600 MHz 2x 8 GB. TOUGHRAM is supported by Intel and AMD platforms and features 10-layer PCB construction, 2oz copper inner layers and 10μ gold fingers, the TOUGHRAM RGB white edition is not only visually appealing, but is also high in performance. The TOUGHRAM RGB White Edition is built with premium fine coating that reveals true elegance from inside out.

The TOUGHRAM RGB DDR4 Memory Series 3,200 MHz and 3,600 MHz white edition is now available for pre-order at the TT Premium website. Please refer to the Thermaltake website or contact your local Thermaltake sales or PR representative for more information on pricing for the Thermaltake TOUGHRAM RGB DDR4 3,200 MHz and 3,600 MHz white edition memory kits.

Micron Technology, Inc., today announced a breakthrough in nonvolatile memory technology with the introduction of the world's fastest SSD, the Micron X100 SSD. The Micron X100 SSD is the first solution in a family of products from Micron targeting storage- and memory-intensive applications for the data center. These solutions will leverage the strengths of 3D XPoint technology and usher in a new tier in the memory-to-storage hierarchy with higher capacity and persistence than DRAM, along with higher endurance and performance than NAND.

"Micron's innovative X100 product brings the disruptive potential of 3D XPoint technology to the data center, driving breakthrough performance improvements for applications and enabling entirely new use cases," said Micron Executive Vice President and Chief Business Officer Sumit Sadana. "Micron is the only vertically-integrated provider of DRAM, NAND and 3D XPoint solutions in the world, and this product continues the evolution of our portfolio towards higher value solutions that accelerate artificial intelligence capabilities, drive faster data analytics and create new insights for our customers."

GLOBALFOUNDRIES (GF), the world's leading specialty foundry, announced today at its Global Technology Conference the availability of 12LP+, an innovative new solution for AI training and inference applications. 12LP+ offers chip designers a best-in-class combination of performance, power and area, along with a set of key new features, a mature design and production ecosystem, cost-efficient development and fast time-to-market for high-growth cloud and edge AI applications.

Derived from GF's existing 12nm Leading Performance (12LP) platform, GF's new 12LP+ provides either a 20% increase in performance or a 40% reduction in power requirements over the base 12LP platform, plus a 15% improvement in logic area scaling. A key feature is a high-speed, low-power 0.5 V SRAM bit cell that supports the fast, power-efficient shuttling of data between processors and memory, an important requirement for AI applications in the computing and wired infrastructure markets.

Samsung's B die has been widely known as a good, high performance variant of DRAM memory, loved by overclockers because of its ability to get to a high frequency with relatively low timings. However, B die has been discontinued and now Samsung started offering its replacement in form of the newly developed A die manufactured in 1z nm (1z class) lithography process. Despite the lack of technical details surrounding the new die type, Hardwareluxx has received a tip from its reader about new RAM offering that incorporates A die memory.

The M378A4G43AB2-CVF, as it is called in the listing, is a 32 GB, single dimm DDR4 RAM with operating speed of 2933 MHz and CL21-21-21 timings. This particular offer isn't something to be excited about as the frequency is good, but the timings are quite high for that speed. Given that we don't know where the A die is targeted at, we can speculate that its current aim is at mid-tier systems, where the mediocre performance is okay and the system isn't suffering (performance wise) because of it. Nonetheless this find is quite interesting as it gives first hints at what can we expect in therms of future A die DRAM offerings. Remember, it took some time for B die as well to get to the level of performance we have today, so it is entirely possible that A die will improve and try to aim for greater performance level than it currently has.

Micron Technology, Inc. (Nasdaq: MU), today announced advancements in DRAM scaling, making Micron the first memory company to begin mass production of 16 Gb DDR4 products using 1z nm process technology

"Development and mass production of the industry's smallest feature size DRAM node are a testament to Micron's world-class engineering and manufacturing capabilities, especially at a time when DRAM scaling is becoming extremely complex," said Scott DeBoer, executive vice president of Technology Development for Micron Technology. "Being first to market strongly positions us to continue offering high-value solutions across a wide portfolio of end customer applications."

Thermaltake, the leading PC DIY premium brand for Cooling, Gaming Gear and Enthusiast Memory solutions, today announced the release of Thermaltake WaterRam RGB Liquid Cooling DDR4 Memory 3600 MHz 32 GB, followed by WaterRam RGB 3200 MHz 32 GB & 16 GB, now are all available on the market.

This is the world's first two-way cooling DDR4 memory that offers ultimate flexibility for cooling options, users can either choose liquid cooling or heatsink convection heat dissipation with ease; whilst, enjoying 16.8 M RGB colors across 12 super-bright addressable LEDs for stunning RGB illumination. Built with the highest quality of components to the highest of standards, the WaterRam RGB delivers outstanding gaming performance with stunning RGB lighting effects for effortless sync with 5 V header motherboards from ASUS, GIGABYTE, MSI and AsRock to maximize your RGB ecosystem.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 12-gigabit ( Gb) LPDDR5 mobile DRAM, which has been optimized for enabling 5G and AI features in future smartphones. The new mobile memory comes just five months after announcing mass production of the 12 GB LPDDR4X, further reinforcing the company's premium memory lineup. Samsung also plans to start mass producing 12-gigabyte (GB) LPDDR5 packages later this month, each combining eight of the 12 Gb chips, in line with growing demand for higher smartphone performance and capacity from premium smartphone manufacturers.

"With mass production of the 12 Gb LPDDR5 built on Samsung's latest second-generation 10-nanometer (nm) class process, we are thrilled to be supporting the timely launch of 5G flagship smartphones for our customers worldwide," said Jung-bae Lee, executive vice president of DRAM Product & Technology, Samsung Electronics. "Samsung remains committed to rapidly introducing next-generation mobile memory technologies that deliver greater performance and higher capacity, as we continue to aggressively drive growth of the premium memory market."

Trendforce, via its market analysis division DRAMeXchange, announced yesterday that it expected DRAM pricing to fall even more than previously estimated. The motive behind this is Huawei's ban following the US-China trade war, which will limit Huawei's ability to deliver its server and, especially, smartphone products. With companies being banned from trading with the Chinese firm, a voracious consumer of the US-tied DRAM production has just evaporated without a trace. This means increasing inventories amidst a freeze in demand due to uncertainty in the overall markets, which will obviously tip the supply-demand balance.

This has led TrendForce to officially adjust its outlook for 3Q DRAM prices from its original prediction of a 10% decline to a widened 10-15% decline, with an additional 10% decline in the fourth quarter. And of course, after prices hit rock bottom, they can only go up, which is why DRAMeXchange expects prices can only increase - and DRAM manufacturers' outlook improve - come 2020. Gear up for those DRAM upgrades this year, folks.

Last year, with the introduction of the Intel Z390 chipset, there was a spate of so-called "double capacity DIMMs" or DC DIMMs, tall memory modules with two rows of DRAM chips, which added up to 32 GB per DIMM. You needed a Z390 platform and a 9th generation Core processor that supported up to 128 GB of memory, to use these things. With the introduction of 16 Gb DDR4 DRAM chips by both Micron and Samsung, JEDEC-compliant 32 GB unbuffered DIMMs of standard height are finally possible, and ADATA put together the first of these, shown off at Computex 2019.

The AD4U2666732GX16 is a 32-gigabyte dual-rank unbuffered DIMM made using 16 Gb chips supplied by Micron Technology. The modules tick at JEDEC-standard DDR4-2666 speeds, at a module voltage of 1.2 Volts. ADATA didn't disclose timings. The 16 Gb DRAM chips are made by Micron in an advanced (3rd generation) 10 nm-class silicon fabrication process to achieve the desired transistor-density. 32 GB DIMMs are expected to hit critical-mass in 2H-2019/2020, with the advent of AMD's 3rd generation Ryzen "Matisse," and Intel's "Ice Lake-S" desktop processors. Memory manufacturers are also expected to put out speedy and highly-compatible single-rank 16-gigabyte DIMMs using 16 Gb chips, which could finally make 32 GB dual-channel the mainstream memory configuration, moving up from half a decade of 2x 8 GB.

Thermaltake, the leading PC DIY premium brand for Cooling, Gaming Gear and Enthusiast Memory solutions, proactively participates in the memory market by announcing brand new premium memory products - TOUGHRAM RGB and TOUGHRAM. Besides, the innovative WaterRam RGB Liquid Cooling Memory kit, Thermaltake has expanded its lineup with the clock speed of 3600MHz.

The Thermaltake TOUGHRAM RGB and TOUGHRAM DDR4 Memory lineup is aiming at high performance gaming/overclocking. TOUGHRAM RGB series range from 3000MHz, 3200MHz and 3600MHz. The RGB lighting effects designed for the TOUGHRAM RGB with its addressable RGB lighting settings can be synchronized with the TT AI Voice Control, Amazon Alexa, and Razer Chroma. TOUGHRAM memory series range from 2400MHz to 3000MHz. These two memory series are supported by the TT Premium heatspreader design, which are tightly screened memory ICs that ensure outstanding cooling performance.

G.SKILL International Enterprise Co., Ltd., the world's leading manufacturer of extreme performance memory and gaming peripherals, is showcasing several ultra-high speed and low latency DDR4 memory kits on Intel and AMD platforms at Computex 2019. These live demo systems feature motherboards from ASUS, ASRock, EVGA, Gigabyte, and MSI, as well as multiple memory kits made with Samsung B-die ICs.

DDR4-4000 384GB (32GBx12) - Massive Capacity DDR4 Beast of a Kit

Any experienced overclocker knows two factors that make achieving high-speed RAM more difficult - high module capacity and increased module count. This mystical beast of a memory kit runs at DDR4-4000MHz with an enormously massive total capacity of 384GB with 12 modules of 32GB each. While earlier 32GB modules were constructed with 8Gb components, these modules use higher density 16Gb ICs. This extremely high-capacity, high-performance live demo system is built with the Intel Xeon W-3175X processor and ASUS ROG Dominus Extreme motherboard.

Yuri "1usmus" Bubliy, who practically wrote the book on AMD Ryzen memory overclocking, presents DRAM Calculator for Ryzen v1.5.0, the latest version of the most powerful tool available to help you overclock memory on PCs powered by AMD Ryzen processors. The biggest feature-addition is MEMBench, a new internal memory benchmark that tests performance of your machine's memory sub-system, and can be used to test the stability of your memory overclock. Among the other feature-additions include the "Compare Timings" button, which gives you a side-by-side comparison of your machine's existing settings, with what's possible or the settings you've arrived at using the app.

Motherboards vary by memory slot topology, and DRAM Calculator for Ryzen can now be told what topology your board has, so it can better tune settings such as procODT and RTT. The author also de-cluttered the main screen to improve ease of use. Among the under-the-hood changes are improved SoC voltage prediction for each generation of Ryzen. The main timing calculation and prediction algorithms are improved with the addition of the likes of GDM prediction. Also added is support for 4-DIMM system configurations. A bug in which the imported HTML profiles were automatically assumed to be specific to Samsung b-die mode. A number of minor changes were made, detailed in the change-log below.

DOWNLOAD: DRAM Calculator for Ryzen by 1usmus

PATRIOT , a global leader in performance memory, SSDs, gaming peripherals, and flash storage solutions, today has announced the release of their latest Signature Premium series line of DDR4 UDIMM memory, which are Non-ECC unbuffered memory designed to deliver outstanding quality, rock solid stability and great performance expected by today's mainstream PC builder.

Signature Premium DDR4 memory provides a wide range of capacities allowing the builder to choose from a variety of speeds and capacities starting with 4GB single modules up to 32GB dual channel kits. The minimalist heat spreader design offers great heat dissipation and is made from high-purity aluminum. Signature Premium DDR4 series modules offer reliability to those who upgrade or build systems for work or business and are cost effective too.

SK Hynix Inc. today announced financial results for its first quarter 2019 ended on March 31, 2019. The consolidated first quarter revenue was 6.77 trillion won while the operating profit amounted to 1.37 trillion won and the net income 1.1 trillion won. Operating margin for the quarter was 20% and net margin was 16%.

Because of a faster-than-expected price decline and lower shipments due to slowing memory demand, the revenue and the operating profit in the first quarter fell by 32% and 69%, respectively, quarter-over-quarter (QoQ). Due to seasonal slowdown and conservative server purchases, DRAM bit shipments decreased by 8% QoQ. The average selling price dropped by 27%. For NAND Flash, the average selling price decreased by 32% due to high inventory levels and intensifying competition among suppliers. The bit shipments declined by 6% QoQ.

HyperX, the gaming division of Kingston Technology, Inc., today announced the release of two new high speed Predator DDR4 memory kits in 4266 MHz and 4600 MHz frequency versions. The new frequency options will be available as 8GB modules in kits of two and include a black aluminum heat spreader and black PCB to complement the look of the latest PC builds by system builders and DIY PC enthusiasts.

"The HyperX team is excited to offer Predator DDR4 for the next generation of PC enthusiasts who want the best performance from their systems," said Kristy Ernt, DRAM business manager, HyperX. "As HyperX continues to support the world of gaming and esports, the community sees us as a trusted leader for high speed memory in the gaming hardware industry."

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today announces the launch of the SPECTRIX D60G DDR4 memory module. The XPG SPECTRIX D60G DDR4 memory features a unique dual RGB light diffuser design that gives it the largest RGB surface area of any memory module! What's more, it sports a wide frequency range from 3200-4133MHz and supports Intel XMP 2.0 profiles for easy overclocking.

The D60G sports more RGB lighting per mm² than any other memory module out there, which equates to over 60% of the module's surface area. The fully exposed light diffusers are extra-wide for maximum effect, and combined with a mesmerizing multi-colored flow effect users will outshine their competition! The unique avant-garde styling of the D60G will also turn heads. It includes XPG's signature X-light design with a diamond-inspired, multi-faceted surface that is a cut above the rest.

Samsung Electronics Q1-2019 preliminary reads like a horror story to investors, as the company posted its worst drop in operating-profit in over four years. Operating income fell 60 percent in the quarter ending March 2019, to about USD $5.5 billion, beating Bloomberg analysts who had predicted a 56 percent drop. Sluggish sales to IoT major Amazon, smartphone major Apple, and other handset makers, compounded by swelling inventory in the supply chain, has triggered sharp drops in DRAM prices that were offsetting critically low NAND flash prices. Demand for Samsung SoCs (application processors) is also on the decline.

Samsung is betting heavily on the success of its Galaxy S10 family of smartphones to recover from losses faced in the three component markets. Prices of DRAM prices fell 22 percent YoY, and NAND flash continues to slide by roughly that much, at 23 percent. NAND flash prices have been on a continuous decline over the past 3 years. DRAM prices, on the other hand, rallied in that period, and it's only now that it posted its first price-drop since 2016. NAND flash prices are expected to slide further down, as oversupply and failure of newer technologies like QLC taking off, hurt NAND flash manufacturers.