SK Hynix Inc. announced that it has developed the world's highest density 16 GB (Gigabytes) of NVDIMM (Non Volatile DIMM) based on 4 Gb (Gigabit) DDR4 using its advanced 20 nm class technology.

This NVDIMM is able to send DRAM data to NAND Flash whose density is two times bigger than the DRAM in a unanticipated power loss by combining DRAM, NAND Flash and the module controller in a single module. Therefore, it is feasible to save and restore data safely as well as performing on the same level with general DDR4 modules. This new product works at 2133 Mbps and with a 64-bit I/O it processes up to 17 GB of data per second running at 1.2V.

Japanese memory maker Century Micro announced its entry-level DDR4 ECC registered memory modules. Compatible with Intel Xeon E5-2600 v3 and Core i7-5000 HEDT processors, the modules come in density of 8 GB (model: CD8G-D4RE2133L82), making up single-module and four-module (32 GB) kits. The CD8G-D4RE2133L82 complies with JEDEC specifications, and runs at DDR4-2133 MHz speeds, with a module voltage of 1.2V, and timings of 15-15-15. The module features an 8-layer PCB, and appears to use DRAM chips made by SK Hynix. The modules will start selling in a couple of weeks from now.

Wanna build a Haswell-E HEDT build on the "cheap?" Then this could make it to your list. ADATA is ready with its no-frills Premier line of DDR4 memory modules, which are sold in single-module packs of 4 GB and 8 GB. The modules stick to JEDEC specifications of DDR4-2133 MHz (PC4-17000), with CAS latencies of 15T, and voltage of 1.2 Volt. The modules use DRAM chips made by SK Hynix. Inclusive of all taxes, the 4 GB module is priced at the equivalent of $75 USD in Japan; and the 8 GB module goes for the equivalent of $150.

The shipment performances of Smartphones, Tablets, and Notebooks were relatively weak in the first quarter due to seasonality. As a result of the entire NAND Flash market's oversupply in 1Q 2014, the branded suppliers' Q1 revenues saw a 6.6% drop compared to the previous quarter, and slid to approximately US$ 7,244 million, according to Sean Yang, Assistant Vice President at DRAMeXchange, the memory and storage research division of TrendForce.

Looking at the branded supplier revenue ranking, Samsung managed to retain its lead in the market with approximately US$ 2,175 million in sales, but saw its market share dip slightly to 30.0%; Toshiba came in second with a revenue total of US$ 1,548 million and an improved market share of 21.4%; SanDisk ended up in third place with US$ 1,367 million in revenue, while Micron came in fourth with US$ 1,050 million; Affected by its capacity allocations, SK Hynix's revenues slid to approximately US$ 594 million, resulting in market share of 8.2%.

Violin Memory, Inc., a leading provider of all-flash storage arrays and appliances delivering application solutions for the enterprise, today announced that it has entered into a definitive agreement to sell its PCIe product line to SK hynix Inc. for approximately $23 million in cash and the assumption of certain liabilities totaling $0.5 million. This sale is consistent with the Company's previously announced plan to review strategic alternatives for its PCIe flash memory card business in order to focus on markets where Violin has proven technology leadership and significant growth opportunities.

The sale of the PCIe product line will include its Velocity PCIe card family, consisting of PCIe-related intellectual property, and certain fixed assets. Under the agreement, SK hynix will extend offers of employment to members of the PCIe development team. The purchase price is subject to a downward adjustment to the extent certain conditions are not satisfied. Closing of the transaction, which is subject to customary closing conditions, is expected to occur by the end of June.

SK Hynix Inc. announced that it has developed the world's first highest density of 128 GB (Gigabytes) module based on 8 Gb(Gigabit) DDR4 using its advanced 20 nm class technology.

This module has double density compared to existing 64 GB by taking advantage of TSV(Through Silicon Via) technology. This new product works at 2133 Mbps and with a 64-bit I/O it processes up to 17 GB of data per second. It also runs at ultra low-voltage of 1.2V which does at lower voltage than 1.35V of existing DDR3.

SanDisk Corporation, a global leader in flash storage solutions, today announced that it has filed a civil lawsuit against Korea's SK Hynix, Inc., SK Hynix America and related entities in Santa Clara Superior Court. The lawsuit seeks damages, an injunction and other remedies against Hynix for trade secret misappropriation under California's Uniform Trade Secret Act. Additionally, SanDisk has submitted a criminal complaint with the Tokyo Metropolitan Police Department against a former employee.

These actions relate to the theft of trade secrets related to NAND flash technology by a former engineer of SanDisk who left the company in 2008 to work for SK Hynix. This engineer is alleged to have illegally taken SanDisk's proprietary technical information and to have subsequently provided it to SK Hynix. Tokyo Metropolitan Police today announced the arrest of the former employee, who worked at SanDisk's joint venture manufacturing facility in Yokkaichi, Japan. SanDisk has been and continues to cooperate with law enforcement in their investigation.

Toshiba Corporation today announced that it has brought a civil suit against Korea's SK Hynix Inc. at the Tokyo District Court, under Japan's Unfair Competition Prevention Act. The suit seeks damages for the wrongful acquisition and use of Toshiba's proprietary technical information related to NAND flash memory, which Toshiba pioneered in 1987 and now jointly develops and produces with SanDisk Corporation of the U.S.

Toshiba filed the suit on learning that a former employee of SK Hynix has been arrested in Japan for alleged criminal infringement of the Unfair Competition Prevention Act. The employee formerly worked for SanDisk in a NAND flash memory development project conducted in partnership with Toshiba at Yokkaichi Operations, Toshiba's flash memory technology development and mass production base in Mie prefecture, Japan. The employee is alleged to have illegally taken Toshiba's proprietary technical information in 2008, and to have subsequently provided it to SK Hynix.

SK Hynix Inc. announced that it has developed the world's first 8 Gb (Gigabit) LPDDR4 (Low Power DDR4) using its advanced 20 nm class technology. LPDDR4 is the next generation mobile DRAM interface on the process of standardization which features ultrahigh speed and low power consumption.

This new product works at 3200 Mbps and ultra low-voltage of 1.1V which runs two times faster than 1600 Mbps and does at lower voltage than 1.2V of existing LPDDR3. The Company has been strengthening its cooperation with the customers for the standardization of this new mobile DRAM by providing the samples of LPDDR4 to major customers and SoC(System on Chip) companies.

PowerColor may have been the first AMD add-in board vendor to launch a custom-design Radeon R9 290X graphics card with its R9 290X LCS, which is basically an AMD reference PCB with a factory-fitted EKWB FC-R9-290X water-block; but its air-cooled non-reference cards have been nowhere in sight, until now. PowerColor posted these pictures of the Radeon R9 290X PCS+, its premium factory-overclocked and air-cooled graphics card based on AMD's flagship GPU. The company's Radeon R9 290 (non-X) PCS+ is expected to look identical.

Pictures reveal the card's PCB to be largely based on AMD's reference design, perhaps with variations on the choice of components. PowerColor has a knack of splurging on expensive, high-quality components on its PCBs (think International Rectifier and Coilworks VRM components, Samsung and SK Hynix memory chips, etc.), and we expect a similar treatment for the R9 290X PCS+. The two-slot cooling solution featured on this card is making its debut with it. It features a network of aluminium fin stacks to which heat is fed by copper heat pipes, and which are ventilated by a trio of 80 mm fans. PowerColor didn't reveal clock speeds, launch date, or pricing.

Here's the first picture of the PCB under the hood of MSI's Radeon R9 290X Gaming OC graphics card, which was unveiled in Japan, over the weekend, and which was detailed in a slightly older article. It turns out that MSI will use the same board design (including the back-plate) on both the R9 290X Gaming OC and the R9 290 Gaming OC, both of which have been put up for pre-order by Canadian e-tailer NCIX. The R9 290X Gaming OC is priced at $699 CAD including taxes (US $660); while the R9 290 Gaming OC is priced at $529.99 CAD including taxes (US $500).

The PCB itself is a slight variation of MSI on AMD's reference design. The layout is identical, but there are subtle differences in component choices MSI made. For example, it ditches Coiltronics-made chokes for MagicTech. Appears to use SK Hynix made memory chips (instead of Elpida on a vast majority of retail R9 290 series boards), etc. It also appears to retain dual-BIOS. According to NCIX, both cards will feature untouched memory clock speeds of 5.00 GHz, yielding memory bandwidth of 320 GB/s, but feature 5-7 percent overclocks on the GPU. The R9 290 Gaming OC features GPU clock speeds (possibly PowerTune boost) of up to 1000 MHz (vs. 948 MHz reference), while the R9 290X Gaming OC features 1040 MHz.

SK Hynix Inc. announced that it has started full-scale mass production of 16 nm 64 Gb (Gigabit) MLC (Multi Level Cell) NAND Flash, which uses the industry's thinnest process technology.

SK Hynix has been mass producing its 1st version of the world's first 16 nm NAND Flash since June and recently has started to mass produce the 2nd version which is more cost competitive due to its smaller chip size. In consequence, the Company geared up for strengthening its competitiveness in NAND Flash.

SK Hynix Inc. announced that it has developed 6 Gb (Gigabit) LPDDR3 (Low Power DDR3) using its 20 nm class process technology. This product is a high-performance mobile memory solution that features low power consumption and high-density, which is ideal for next generation premium mobile devices.

Four 6 Gb LPDDR3 products can be stacked up and realize a high density of maximum 3 GB (Gigabytes, 24 Gb) solution in a single package. In consequence, this package reduces the operating power as well as the standby current by 30% and the height of the package becomes thin compared to the Company's 4 Gb-based one. In addition, it works at ultra low-voltage of 1.2V thus it satisfies low power consumption which mobile applications demand.

SK Hynix Inc. announced it established a research and development (or 'R&D') center 'SK Hynix Flash Solutions Taiwan Ltd.'. The Company will strengthen global R&D competence and customer support by adding the R&D center in Taiwan.

The Taiwan R&D center will focus on intensifying its competence in development of high value added NAND Flash memory products. The center is located in Hsinchu, the hub of Taiwan IT industry, so it is expected to become a base of the technology support for Chinese and Taiwanese clients.

A massive fire broke out this afternoon (local time), at a SK Hynix production facility in Wuxi, China. At this moment, pictures and videos of the fire are swarming through local social networks, and there are no official announcements by either the local authorities, or the company itself. Incidentally, this isn't the first fire accident at an SK Hynix manufacturing facility, a Korea-based fab suffered one in February 2008. The facility hit by fire is rumored to be one that handles packaging (placing bumped dies inside ceramic or plastic shells, and labeling them). If the extant of damage to the facility is high, it might affect NAND flash prices more than DRAM, since the company recently prioritized NAND flash over DRAM for the facility.