China's semiconductor industry is seeking independence in every sector of its industry, with an emphasis of homemade products for domestic use, especially government facilities, where usage of homegrown products is most desirable. According to the report of China Securities Journal, Chinese firm has started production of DRAM memory.

A company named ChangXin Memory Technology, founded in 2016 to boost domestic silicon production, on Monday started production of DRAM memory, aiming to directly replace the current supply of foreign memory from companies like Micron, SK Hynix and Samsung. Being build using 18 nm technology which ChangXin calls "10-nanometer class" node, this DRAM chip isn't too far behind offers from competitors it tries to replace. Micron, Samsung and SK Hynix use 12, 14, and 16 nm nodes for production of their DRAM chips, so Chinese efforts so far are very good. The company promises to produce around 120.000 wafers per month and plans to deliver first chips by the end of this year.

SK hynix Inc. announced today the launch of its "Gold S31" solid-state drive (SSD). Gold S31 (SATA III - first generation) is the first of the Company's new SuperCore series of consumer SSDs, an internal drive lineup based on SK hynix's core technology. With its speed and reliability, SK hynix's Gold S31 will be a perfect choice for all PC users, particularly for gamers, designers, and content creators. Gold S31 pushes the limits on high-performance SSDs, providing users the next level of speed with sequential read speeds up to 560 MB/s, as well as superior quality, reliability, and five-year warranty.

The 2.5-inch drive supports the SATA III interface based on 3D NAND Flash technology, and is now available in 1 TB, 500 GB and 250 GB capacities on Amazon US. All key components in Gold S31, from NAND Flash and built-in controller to DRAM and firmware, were designed and produced by SK hynix. The in-house components are built for robust performance and reliability.

SK Hynix Inc. announced today that it has developed HBM2E DRAM product with the industry's highest bandwidth. The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity compared to the previous HBM2. SK Hynix's HBM2E supports over 460 GB (Gigabyte) per second bandwidth based on the 3.6 Gbps (gigabits-per-second) speed performance per pin with 1,024 data I/Os (Inputs/Outputs). Through utilization of the TSV (Through Silicon Via) technology, a maximum of eight 16-gigabit chips are vertically stacked, forming a single, dense package of 16 GB data capacity.

SK Hynix's HBM2E is an optimal memory solution for the fourth Industrial Era, supporting high-end GPU, supercomputers, machine learning, and artificial intelligence systems that require the maximum level of memory performance. Unlike commodity DRAM products which take on module package forms and mounted on system boards, HBM chip is interconnected closely to processors such as GPUs and logic chips, distanced only a few µm units apart, which allows even faster data transfer.

SK Hynix Inc. announced today that its DRAM and Enterprise SSD (eSSD) solutions, including the up-to-date 1Y nm 8 Gb DDR4 DRAM, have been fully tested and validated with the new AMD EPYC 7002 Generation Processors, which were unveiled during AMD's launch event on August 7. The Company has worked closely with AMD to provide memory solutions fully compatible with the 2nd Gen AMD EPYC Processors, targeting high performance data centers.

The SK Hynix DDR4 DRAM supports the maximum speed of 3200 Mbps of the 2nd Gen EPYC Processors, which will increase memory performance more than 20% compared to the 1st Gen AMD EPYC Processors. The Company's various DDR4 DRAM solutions, based on the 1Xnm and 1Y nm technology with density of 8 Gb and 16 Gb, have been fully tested and validated with the 2nd Gen EPYC Processors. SK Hynix provides high-density DIMMs with density over 64 GB to support up to 64 cores per socket in the 2nd Gen EPYC.

SK Hynix also provides a full line-up of SATA and PCIe from 480 GB to 8 TB, which have also been validated and tested with the 2nd Gen EPYC. SK Hynix's eSSD solutions are optimized for the latest data center's read-intensive and mixed workload environment.

SK Hynix Inc. announced today that it has developed and starts mass-producing the world's first 128-Layer 1 Tb (Terabit) TLC (Triple-Level Cell) 4D NAND Flash, only eight months after the Company announced the 96-Layer 4D NAND Flash last year.

The 128-Layer 1 Tb NAND chip offers the industry's highest vertical stacking with more than 360 billion NAND cells, each of which stores 3 bits, per one chip. To achieve this, SK Hynix applied innovative technologies, such as "ultra-homogeneous vertical etching technology," "high-reliability multi-layer thin-film cell formation technology," and ultra-fast low-power circuit design, to its own 4D NAND technology.

SK hynix Inc. today announced financial results for its second quarter 2019 ended on June 30, 2019. The consolidated second quarter revenue was 6.45 trillion won while the operating profit amounted to 638 billion won and the net income 537 billion won. Operating margin for the quarter was 10% and net margin was 8%.

As demand recovery did not meet expectations and price declines were steeper than expected, the revenue and the operating profit in the second quarter fell by 5% and 53%, respectively, quarter-over-quarter (QoQ). DRAM bit shipments increased by 13% QoQ as the Company actively responded to the mobile and PC DRAM markets, where demand growth was relatively high. However, DRAM prices remained weak and the average selling price dropped by 24%. For NAND Flash, the bit shipments increased by 40% QoQ because of demand recovery due to price declines, while the average selling price decreased by 25%.

Prices of DRAM shot up by 20 percent as Japan put in place export curbs that restrict high-technology exports to South Korea, and as Toshiba recovers from a power blackout that temporarily halted production. This could impact prices of end-user products such as PC memory modules, or consumer electronics, such as smartphones, in the coming weeks, as inventories either dry up, or are marked-up at various stages of the supply-chain. The memory industry is inter-dependent between fabrication and packaging units spread across South Korea, Japan, and Taiwan.

Memory and flash industry observer DRAMeXchange reported that spot-pricing of 8-gigabit DDR4 DRAM chips, which is used as a benchmark for DRAM pricing as a whole, closed at USD $3.74 at the end of trading on Friday (19/07). It's up 14.6 percent week-over-week, and 23 percent up pricing as on 5th July. An industry observer who spoke with KBS World notes that the recent hikes are not directly infuenced by the trade-spat between Japan and Korea, but rather a power blackout experienced at a Toshiba DRAM manufacturing facility last month. The observer noted that if the trade-spat affects production at Samsung Electronics or SK Hynix, DRAM prices could "skyrocket."

SK hynix Inc. announced today that it has developed and started mass-producing the world's first 128-Layer 1 Tb (Terabit) TLC (Triple-Level Cell) 4D NAND Flash, only eight months after the Company announced the 96-Layer 4D NAND Flash last year.

The 128-Layer 1 Tb NAND chip offers the industry's highest vertical stacking with more than 360 billion NAND cells, each of which stores 3 bits, per one chip. To achieve this, SK hynix applied innovative technologies, such as "ultra-homogeneous vertical etching technology," "high-reliability multi-layer thin-film cell formation technology," and ultra-fast low-power circuit design, to its own 4D NAND technology.

The new product provides the industry's highest density of 1 Tb for TLC NAND Flash. A number of companies including SK hynix have developed 1 Tb QLC (Quad-Level Cell) NAND products, but SK hynix is the first to commercialize the 1 Tb TLC NAND Flash. TLC accounts for more than 85% of the NAND Flash market with excellent performance and reliability.

SK hynix Inc. announced today that it launched a new low-power Non-Volatile Memory express (NVMe) Enterprise SSD (eSSD) with the 72-layer TLC 3D NAND flash that offers best-in-class performance for power as well as Quality of Service. The product features an in-house NVMe controller on top of the 72-layer 3D NAND technology currently in mass production. With the launch, SK hynix has established itself as a memory producer that designs, develops, and mass-produces all key components, from NAND and DRAM to controllers, in-house, for not only Client but also Enterprise applications.

Meanwhile, power consumption of datacenters is an increasingly important concern in terms of energy and environmental preservation, as their footprint grows amid rising enterprise demand for cloud, Artificial Intelligence (AI), and Machine Learning (ML). As datacenters are expected to account for one-fifth of the world's energy consumption in 2025, low-power components that enable datacenter energy efficiency are expected to only grow in importance.

A report from DigiTimes pits NAND manufacturers as accelerating their 120/128 layer 3D NAND technologies, aiming for volume production as early as 2020. Even as SK Hynix has begun sampling its 96-layer 4D NAND flash in March, Toshiba and Western Digital already had plans to introduce 128-layer technology, built on a TLC (Triple Level Cell) process technology so as to increase density while avoiding yield issues present with current QLC (Quad Level Cell) implementations.

The decision to accelerate deployment of the next generation of NAND comes from the fact that the market still faces an oversupply of NAND flash, mostly driven by the mature process of 64-layer NAND technology. With new technologies, higher ASPs and lower production scales are sustainable, which should enable supply to reduce enough so as to increase pricing of NAND-based technologies - and allow manufacturers to somewhat reset asking prices for new NAND chips.

SK Hynix Inc., announced today that it has delivered samples of new 1Tb (Terabit) QLC (Quadruple Level Cell) product to major SSD (Solid State Drive) Controller companies. The Company applied its own QLC technology to its world's first 96-Layer "CTF (Charge Trap Flash) based 4D (Four-Dimensional) NAND Flash (or 4D NAND)." SK Hynix intends to expand its NAND portfolio to 96-layer-based 1Tb QLC products in time for the QLC market opening and strengthen its responsiveness to the next-generation high-density memory market.

QLC stores four bits of data in one NAND cell, allowing higher density compared to TLC (Triple Level Cell) that stores three bits per cell. Using QLC, it is possible to develop high-density products with cost competitiveness. SK Hynix is able to secure the industry's top-level cost competitiveness through this product, which has reduced the area to less than 90% of the existing 3D-based QLC products.

SK Hynix Inc. today announced that it held a ceremony celebrating the completion of an expanded fabrication plant (or 'C2F') in Wuxi, China, on April 18th. C2F is an expansion of the existing DRAM production line, C2, in Wuxi. The Company decided to expand its production line in 2016 in order to solve the shortage of production space due to technology migration. About 500 people attended the ceremony, including Li Xiaomin, Party Secretary of Wuxi, Guo Yuanqiang, Vice Governor of Jiangsu, Choi Youngsam, Consul-General in Shanghai, Lee Seok-hee, Chief Executive Officer of SK Hynix, and representatives of clients and business partners.

SK Hynix signed a contract with Wuxi City, Jiangsu Province, China, in 2004 to establish a local factory and completed the production line (C2) in 2006 to start producing DRAM. C2 is the Company's first 300mm FAB and has played a major role in SK Hynix's growth to date. However, with technology scaling, the number of processes has increased and the equipment has become larger, which led to the shortage of the cleanroom space. SK Hynix, therefore, has invested a total of 950 billion KRW from June 2017 to April 2019 to secure additional production space.

SK Hynix Inc. today announced financial results for its first quarter 2019 ended on March 31, 2019. The consolidated first quarter revenue was 6.77 trillion won while the operating profit amounted to 1.37 trillion won and the net income 1.1 trillion won. Operating margin for the quarter was 20% and net margin was 16%.

Because of a faster-than-expected price decline and lower shipments due to slowing memory demand, the revenue and the operating profit in the first quarter fell by 32% and 69%, respectively, quarter-over-quarter (QoQ). Due to seasonal slowdown and conservative server purchases, DRAM bit shipments decreased by 8% QoQ. The average selling price dropped by 27%. For NAND Flash, the average selling price decreased by 32% due to high inventory levels and intensifying competition among suppliers. The bit shipments declined by 6% QoQ.

The latest analysis of the PC DRAM market from DRAMeXchange, a division of TrendForce, finds that most contracts are now monthly deals rather than quarterly deals, with February even seeing a most unusual, large down-correction in prices. The current quarterly decline dropped from the originally projected 25% to nearly 30%, resulting in the sharpest decline in a single season since 2011.

DRAMeXchange points out that, according to the most recent market observations, inventory levels have kept climbing ever since overall contract prices dropped in the fourth quarter of last year, and most DRAM suppliers are currently holding around a whopping six weeks' worth of inventory (wafer banks included). Meanwhile, Intel's low-end CPU supply shortage is expected to last until the end of 3Q19, and PC-OEMs are unable to carry out the consumption of DRAM chips under demand suppression. The overall market has thus entered freefall, meaning that large reductions in prices aren't going to be effective in driving sales. The excessively high inventory will continue to cause down-corrections in prices this year if demand doesn't make a strong comeback.

DigiTimes is reporting that three of the major DRAM and Flash players in the industry - Micron, Samsung and SK Hynix - are expected to drop an astonishing 26% sequentially on 1Q19 and 29% YoY for 1Q19. The combined revenue drop for the three DRAM and Flash semiconductor giants comes in the face of seasonality and decreasing prices, and the decline continues an already negative 4Q18, which saw a decrease of 18% sequentially and 26% from a year earlier.

With memory pricing facing a continuous decline in recent times, clients are taking a pondered approach towards ordering from manufacturers - an expectation of future savings being the main factor for this. Demand, however, is expected to pick up in 2H19, due to increased demand from end customers, following price-cuts from manufacturers and improved specifications on end-products.

GlobalFoundries is looking to be sold lock-stock-and-barrel by its investors, after heavily downsizing and parting with some of its Singapore-based assets recently. Once promising to lead the market with 7 nm and 5 nm advancements, the company crashed out of the sub-10 nm race, making AMD, its biggest customer, look for 7 nm supplies from TSMC. GlobalFoundries is the world's third largest semiconductor foundry service provider, with an 8.4 percent market share, behind TSMC and Samsung. Intel doesn't offer manufacturing services, as its fabs are fully dedicated to manufacturing its own products.

GlobalFoundries's main investor is Abu Dhabi-based Mubadala Technology, which holds a 90 percent stake in the company. Korean semiconductor companies Samsung and SK Hynix are reportedly in the foray to buy out GlobalFoundries, as it would give them a turnkey presence in the US, with its Upstate New York facilities. The company is unlikely to entertain bids from Chinese companies, as CFIUS would likely block the sale. "Global Foundries is unlikely to be bought by a Chinese company such as SMIC in that the U.S. government is keeping China in check in various industries," said an industry insider, adding, "The most potential candidates include South Korean companies such as Samsung Electronics and SK Hynix, and Samsung Electronics can increase its share in the market to 23 percent at once if it takes over Global Foundries."

The PC5 DDR5 main memory standard could enter the market by 2020, according to SK Hynix research fellow Kim Dong-Kyun. The first such memory standard will be DDR5-5200, which offers nearly double the bandwidth of DDR4-2666. "We are discussing several concepts of the post DDR5," he said. "One concept is to maintain the current trend of speeding up the data transmission, and another is to combine the DRAM technology with system-on-chip process technologies, such as CPU," he added, without offering any additional information. SK Hynix had in 2018 developed a working prototype of a 16-gigabit (2 GB) DDR5 DRAM chip ticking at 5200 MT/s, at 1.1 Volts. A 64-bit wide memory module made with these chips could offer bandwidth of 41.6 GB/s.

SK Hynix is developing its own innovations that could make its DDR5 chips more advanced than the competition without going off-standard. "We have developed a multi-phase synchronization technology that enables keeping the voltage during a high-speed operation in a chip at a low level by placing multiple phases within the IP circuit, so the power used on each phase is low but the speed is high when combined," Kim said. He also mentioned that development of the DDR6 PC memory standard is already underway, with the design goals of doubling bandwidth and densities over DDR5. Advancements in DRAM are propelled not just by the PC ecosystem, but also handhelds and self-driving car electronics.

The Chinese State Administration for Market Regulation has been conducting an anti-monopoly investigation of the global Dynamic RAM market. According to an interview of Wu Zenghou (bureau's head) in the Financial Times, this process has found "massive evidence" against the three companies (Samsung, Hynix, and Micron) that are responsible for the vast majority of this segment. "The anti-monopoly investigation into these three companies has made important progress", points out the investigator. On April these three companies were hit with a price-fixing suit on the same matter in the US, and this investigation seems to confirm those reports.

There is even an older precedent, as Samsung and Hynix were fined both by the US Department of Justice in 2005 and by the European Commission in 2010 on price-fixing allegations. The charges now are similar, and if the companies are found guilty, they could face fines of over $2.5 billion. Some analysts suggest this investigation could be part of the trade war between China and the US, with the former trying to get some leverage pushing the Chinese semiconductor company Fujian Jinhua Integrated Circuit as a bigger player on this market. One that, by the way, is being investigated on allegations of misappropriated trade secrets from Micron. Samsung and SK Hynix have accused China DRAM makers of industrial espionage, too.

SK Hynix announced that it has developed 16 Gb DDR5 DRAM, the industry's first DDR5 to meet the JEDEC standards. The same 1Ynm process technology used for the recently-developed 1Ynm 8Gb DDR4 DRAM was applied to the new DRAM, giving an industry-leading competitive edge for the Company.

DDR5 is a next-generation DRAM standard that offers ultra-high speed and high density with reduced power consumption as compared to DDR4, for use in data-intensive applications such as big data, artificial intelligence, and machine learning.

SK Hynix Inc. announced that it has developed 1Ynm 8Gb (Gigabits) DDR4 (Double Data Rate 4) DRAM. The productivity of this product is increased by 20% and the power consumption reduced by more than 15%, compared to the previous generation, 1Xnm DRAM. It also supports a data transfer rate of up to 3,200Mbps, which is the fastest data processing speed in DDR4 interface. The Company adopted a '4-Phase Clocking' scheme, which doubles the clock signal to boost data transfer speed and stability.

SK Hynix also introduced its own 'Sense Amp. Control' technology to reduce power consumption and data errors. With this technology, the Company successfully enhanced the performance of the sense amplifier. SK Hynix improved the transistor structure to lower the possibility of data errors, a challenge that accompanies technology shrink. The Company also added a low-power power supply to the circuit to prevent unnecessary power consumption.

SK Hynix today launched the world's first 96-Layer 512Gb CTF (Charge Trap Flash) based 4D NAND flash. Don't let the name trick you - it's still based on 3D TLC technology, but SK Hynix has gone and added a 4th dimension due to its pairing of charge trap flash technology in conjunction with PUC (Peri. Under Cell technology.

SK Hynix says that their approach is (obviously) better than the industry-wide 3D Floating Gate approach. The 4D NAND chip design results in a reduction of more than 30% in chip size, and increases bit productivity per wafer by 49% compared to the Company's 72-Layer 512Gb 3D NAND. Moreover, the product has 30% higher write and 25% higher read performance. Also, its data bandwidth is doubled to an industry-leading (in size) 64KB. Data I/O (Input Output) speed reaches 1,200Mbps (Megabits/sec) at 1.2 V.

Solid-state drives are cheaper than ever, thanks to systematic decline in NAND flash prices owing both to oversupply and increases in densities. NAND flash prices have already declined by 50 percent over 2018, according to a DigiTimes report, and will continue to slide through 2019. ADATA chairman Simon Chen commented that NAND flash makers haven't slowed down capacity expansions, and 2019 could witness an even bigger drop in prices than 2018.

Major NAND flash makers such as IMFlash Technology, SK Hynix, Samsung, Western Digital, Toshiba, have already taped out their 96-layer 3D NAND flash products, which could enter volume production in the first half of 2019. This could impact prices of existing swelling inventories of products based on 64-layer NAND flash. In theory, the 96-layer chips introduce 50 percent increases in densities. Adoption of newer technologies such as QLC (4 bits per cell) will expand densities even further. The same report also projects that DRAM prices could largely remain flat throughout 2019. Most NAND flash makers also happen to make DRAM, and could balance their NAND flash losses with DRAM profits.

In a bid to head off investor worries of a potential downturn, Samsung is looking to tighten their belts in regards to the manufacturing of DRAM. In particular, this move is preempted by the expectation of DRAM bit growth to be less than 20% year-over-year, with bit growth being the key measurement for gauging market demand based on the amount of memory produced. Considering the semiconductor industry is known for its up and down cycles, Samsung's preemptive move could stabilize or even drive up the cost of memory coming out of not just them but Micron and SK Hynix as well. This would help keep their profits rolling in, just in case a downturn in demand does take place, but it also means PC enthusiasts will have to deal with memory prices remaining roughly the same or possibly climb higher going forward.

Anthea Lai, an analyst for Bloomberg Intelligence, in Hong Kong made note that "If Samsung does cut its DRAM bit growth, it shows the company is happy with the current oligopoly market structure." Elaborating further, he said that "It prefers keeping supply tight and prices high, rather than taking market share and risking lower prices, therefore chances for DRAM prices to stay strong is higher."

DigiTimes is reporting plans from both Samsung and SK Hynix to slow down their fabrication capacity expansion plans for NAND and DRAM in wake of lower than expected demand projection for the first half of 2019. This move comes at a time where DRM pricing is still extremely prohibitive due to "higher demand than fabrication capacity output" - and we'd already seen the companies base their fabrication expansions on lower than expected demand increases, as a way to artificially keep pricing for the memory commodity high. NAND is another case - price per GB has been dropping like a rock. And now, the companies want to thwart expected lower demand with lower production values.

Samsung, for one, has reportedly put its plans for additional new production capacity for 1ynm DRAM chips at its fabs in Hwaseong and Pyeongtaek on hold. The chip vendor previously planned to build an additional 30,000 wafers monthly for DRAM memory starting the third quarter of 2018, the sources said - but is now looking to reduce that number to keep pricing from bottoming out. Sk Hynix is also reported to have slowed down its projected production, but details are scarcer on that side of the fence. All in all, it seems that whether there is demand or not, seeing DRAM prices falling to their previous levels is a dream in both name and, not paradoxically, reality.

3D NAND flash revolutionized flash storage as it used the third dimension (height) to stack multiple NAND flash layers, resulting in infinitesimally smaller footprint and reduced costs. SK Hynix believes that a "4-dimensional" NAND flash package is possible. Don't worry, such a stack doesn't look like a tesseract. Conventional 3D NAND flash relies on stacks of charge-trap flash (CTF) cells spatially located alongside its periphery block (which is responsible for wiring out each of the layers of the CTF stack). On a 2-D plane you'd be spending substrate real-estate on both the CTF and periphery block.

SK Hynix believes that the periphery block can be stacked along with the CTF stack, with microscopic vias wiring up the stack along the periphery, reducing the footprint of each cell stack. 4D stacking will also allow for greater number of CTF stacks per cell. Just to be clear, we're talking about stacks of cell and not stacks of NAND flash dies. The V5 cell-stack in SK Hynix's design entails 4 cells and periphery blocks sandwiched. The first implementation of this technology is a 96-layer 4D NAND flash chip with 512 Gb of capacity and TLC (3 bits per cell) density, although the technology is ready for QLC cells. This 512 Gb chip will begin sampling by the end of 2018, and the company is already working on a 1 Tb chip for 2019.