SanDisk Corporation, a global leader in flash memory storage solutions, today announced it has begun customer sampling of flash memory products based on its industry-leading 1Ynm process technology, which represents its second generation 19 nanometer (nm) manufacturing technology. SanDisk's achievement of this breakthrough in semiconductor manufacturing takes its memory cell size from 19nm-by-26nm to 19nm-by-19.5nm, delivering a 25 percent reduction of the memory cell area and allowing SanDisk to continue leading the industry in building smaller, more powerful flash memory products.

SanDisk's second-generation 19nm memory die uses the most sophisticated flash memory technology node to-date, including advanced process innovations and cell-design solutions. SanDisk's All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability. In addition, SanDisk's three bits per cell X3 technology, implemented in the second-generation 19nm node will deliver the lowest-cost flash solutions to address multiple growing end-markets for flash memory.

Building on its leadership in multi-level cell (MLC) technology, SanDisk Corporation today announced that it will begin mass-production of the world's first high performance 4-bits-per-cell (X4) flash memory. Using 43-nanometer (nm) process technology, this breakthrough enables 64-gigabit (Gb) memory in a single die - the highest capacity in the industry and suitable for the most demanding storage applications. SanDisk has also produced an advanced X4 controller, which is necessary to effectively manage the complexities and performance requirements of X4 memory. The X4 memory chip combines with the X4 controller chip in a multi-chip package (MCP) to provide a complete, integrated and low-cost storage solution.