Drive:
MX100 uses small SMDs Ceramic capacitors, which do not provide full protection from host power failures, but instead protect the data at rest. (backup circuitry that merely protects the existing data from corruption)
Meaning that the NAND mapping table as well as any in-flight user data are still vulnerable to sudden power losses.
Supports R.A.I.N. - (Redundant Array of Independent NAND) is also included to protect against page/block level failures and the parity ratio remains at 127:1 similar to the M550 (i.e. one bit of parity is generated for every 127 bits of user data).
NAND Die:
• Organization
– Page size x8: 18,526 bytes (16,384 + 1872 bytes)
– Block size: 512 pages (8192K + 608K bytes)
– Plane size: 2 planes x 1048 blocks per plane
– Device size: 128Gb: 2096 blocks;
256Gb: 4192 blocks;
512Gb: 8384 blocks;
1Tb: 16,768 blocks
2Tb: 33,536 blocks
• NV-DDR2 I/O performance
– Up to NV-DDR2 timing mode 6
– Clock rate: 6ns (NV-DDR2)
– Read/write throughput per pin: 333 MT/s
• NV-DDR I/O performance
– Up to NV-DDR timing mode 5
– Clock rate: 10ns (NV-DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
– tRC/tWC: 20ns (MIN)
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 115μs (MAX)
– Program page: 1600μs (TYP)
– Erase block: 3ms (TYP)