Multiple hardware versions found.
Performance could vary due to unannounced flash/controller changes.
Capacity: | 500 GB |
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Variants: | 500 GB 1 TB 2 TB |
Hardware Versions: | |
Overprovisioning: | 46.3 GB / 10.0 % |
Production: | Active |
Released: | 2022 |
Price at Launch: | 110 USD |
Part Number: | NT01NV5000-500G-E4X |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
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Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 1.4 |
Power Draw: | Unknown |
Manufacturer: | Phison |
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Name: | PS5016-E16-32 |
Architecture: | ARM 32-bit Cortex-R5 |
Core Count: | Quad-Core |
Frequency: | 733 MHz |
Foundry: | TSMC |
Process: | 28 nm |
Flash Channels: | 8 @ 800 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Toshiba |
---|---|
Name: | BiCS4 |
Type: | TLC |
Technology: | 96-layer |
Speed: | 800 MT/s |
Capacity: | Unknown |
ONFI: | 4.0 |
Toggle: | 3.0 |
Topology: | Charge Trap |
Process: | 19 nm |
Die Size: | 86 mm² (6.0 Gbit/mm²) |
Planes per Die: | 2 |
Decks per Die: | 2 |
Word Lines: |
109 per NAND String
88.1% Vertical Efficiency |
Read Time (tR): | 58 µs |
Program Time (tProg): | 561 µs |
Die Read Speed: | 551 MB/s |
Die Write Speed: | 57 MB/s |
Endurance: (up to) |
3000 P/E Cycles
(30000 in SLC Mode) |
Page Size: | 16 KB |
Block Size: | 1152 Pages |
Plane Size: | 1822 Blocks |
Type: | DDR4 |
---|---|
Capacity: | 512 MB |
Sequential Read: | 5,000 MB/s |
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Sequential Write: | 2,500 MB/s |
Random Read: | 450,000 IOPS |
Random Write: | 550,000 IOPS |
Endurance: | 350 TBW |
Warranty: | 5 Years |
MTBF: | 2.0 Million Hours |
Drive Writes Per Day (DWPD): | 0.4 |
SLC Write Cache: | Yes |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
This section lists other SSDs in our database using the exact same hardware components |
Controller:2 main cores using Cortex-R5 clocked at 733 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at 200MHz ~ 300MHz for better efficience. NAND Die:Read latency tR: 58 µs (ABL) |