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Netac NV5000 500 GB (Kioxia BiCS4)

500 GB
Capacity
Phison E16
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Netac NV5000 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 500 GB variant. With the rest of the system, the Netac NV5000 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5016-E16-32 from Phison, a DRAM cache chip is available. Netac has installed 96-layer TLC NAND flash on the NV5000, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The NV5000 is rated for sequential read speeds of up to 5,000 MB/s and 2,500 MB/s write; random IOPS reach up to 450K for reads and 550K for writes.
At its launch, the SSD was priced at 110 USD. The warranty length is set to five years, which is an excellent warranty period. Netac guarantees an endurance rating of 350 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 500 GB
Variants: 500 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 46.3 GB / 10.0 %
Production: Active
Released: 2022
Price at Launch: 110 USD
Part Number: NT01NV5000-500G-E4X
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5016-E16-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 733 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: Unknown
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4
Capacity: 512 MB

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 2,500 MB/s
Random Read: 450,000 IOPS
Random Write: 550,000 IOPS
Endurance: 350 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

2 main cores using Cortex-R5 clocked at 733 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at 200MHz ~ 300MHz for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Nov 7th, 2024 12:33 EST change timezone

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