Multiple hardware versions found.
Performance could vary due to unannounced flash/controller changes.
Capacity: | 250 GB |
---|---|
Variants: | 120 GB 250 GB 500 GB 1 TB 2 TB |
Hardware Versions: | |
Overprovisioning: | 23.2 GB / 10.0 % |
Production: | End-of-life |
Released: | Dec 8th, 2014 |
Price at Launch: | 150 USD |
Part Number: | MZ-75E250 |
Market: | Consumer |
Form Factor: | 2.5" |
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Interface: | SATA 6 Gbps |
Protocol: | AHCI |
Power Draw: |
0.05 W (Idle) 3.7 W (Avg) 4.4 W (Max) |
Manufacturer: | Samsung |
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Name: | MGX (S4LN062X01) |
Architecture: | ARM 32-bit Cortex R4 |
Core Count: | Dual-Core |
Frequency: | 550 MHz |
Foundry: | Samsung |
Process: | 32 nm |
Flash Channels: | 8 |
Chip Enables: | 8 |
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V2 |
Part Number: | K9OKGY8S7C-CCK0 |
Type: | TLC |
Technology: | 32-layer |
Speed: | 533 MT/s .. 1000 MT/s |
Capacity: | 2 chips @ 1 Tbit |
Topology: | Charge Trap |
Process: | 40 nm |
Die Size: | 69 mm² (1.9 Gbit/mm²) |
Dies per Chip: | 8 dies @ 128 Gbit |
Planes per Die: | 1 |
Decks per Die: | 1 |
Word Lines: |
39 per NAND String
82.1% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 700 µs |
Block Erase Time (tBERS): | 3500 ms |
Die Write Speed: | 50 MB/s |
Endurance: (up to) |
7000 P/E Cycles
(20500 in SLC Mode) |
Page Size: | 16 KB |
Block Size: | 384 Pages |
Plane Size: | 2732 Blocks |
Type: | LPDDR2-1066 |
---|---|
Name: | SAMSUNG K4E4E164EE-SGCE |
Capacity: |
512 MB
(1x 512 MB) |
Organization: | 4Gx16 |
Sequential Read: | 540 MB/s |
---|---|
Sequential Write: | 520 MB/s |
Random Read: | 97,000 IOPS |
Random Write: | 88,000 IOPS |
Endurance: | 75 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.2 |
SLC Write Cache: |
approx. 3 GB
(static only) |
Speed when Cache Exhausted: | approx. 300 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Drive:Rev 2: SAMSUNG V3 V-NAND 48-Layers Controller:Could be 4 or 8 Channels NAND Die:tPROG with overhead: 700 µs (Avg 45.7 MB/s per die) |