Capacity: | 1.9 TB (1920 GB) |
---|---|
Variants: | 960 GB 1.9 TB 3.8 TB 7.5 TB |
Overprovisioning: | 259.9 GB / 14.5 % |
Production: | Active |
Released: | Feb 2021 |
Part Number: | MZQL21T9HCJR-00A07 |
Market: | Enterprise |
Form Factor: | U.3 |
---|---|
Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 1.4 |
Power Draw: |
3.5 W (Idle) 10.0 W (Avg) 12.5 W (Max) |
Manufacturer: | Samsung |
---|---|
Name: | Elpis (S4LV003) |
Architecture: | ARM 32-bit Cortex-R8 |
Core Count: | 5-Core |
Foundry: | Samsung |
Process: | 8 nm |
Flash Channels: | 8 @ 1,400 MT/s |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V6 |
Part Number: | K9DMGB8J1C-CCK0 |
Type: | TLC |
Technology: | 128-layer |
Speed: | 800 MT/s .. 1200 MT/s |
Capacity: | 8 chips @ 2 Tbit |
Toggle: | 4.0 |
Topology: | Charge Trap |
Dies per Chip: | 8 dies @ 256 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
136 per NAND String
94.1% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 400 µs |
Block Erase Time (tBERS): | 3.5 ms |
Die Read Speed: | 711 MB/s |
Die Write Speed: | 84 MB/s |
Page Size: | 16 KB |
Type: | LPDDR4-3200 |
---|---|
Name: | Samsung K4A4G085WF-BCWE |
Capacity: |
2560 MB
(5x 512 MB) |
Organization: | 4Gx8 |
Sequential Read: | 6,800 MB/s |
---|---|
Sequential Write: | 2,700 MB/s |
Random Read: | 850,000 IOPS |
Random Write: | 130,000 IOPS |
Endurance: | 3504 TBW |
Warranty: | 5 Years |
MTBF: | 2.0 Million Hours |
Drive Writes Per Day (DWPD): | 1.0 |
SLC Write Cache: | Unknown |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | Yes |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
|
Controller:NAND Flash Bus not confirmed, could be higher or slower. NAND Die:This die, in theory should have half the block count per each plane |