Capacity: | 960 GB |
---|---|
Variants: | 240 GB 480 GB 960 GB 1.9 TB 3.8 TB |
Overprovisioning: | 129.9 GB / 14.5 % |
Production: | End-of-life |
Released: | Apr 10th, 2018 |
Part Number: | MZ7KH960HAJR-00005 |
Market: | Enterprise |
Form Factor: | 2.5" |
---|---|
Interface: | SATA 6 Gbps |
Protocol: | AHCI |
Power Draw: |
1.4 W (Idle) 2.4 W (Avg) 2.9 W (Max) |
Manufacturer: | Samsung |
---|---|
Name: | MJX Maru (S4LR030) |
Architecture: | ARM 32-bit Cortex R4 |
Core Count: | Triple-Core |
Frequency: | 1,000 MHz |
Foundry: | Samsung FinFET |
Process: | 14 nm |
Flash Channels: | 8 @ 800 MT/s |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V4 |
Type: | MLC |
Technology: | 64-layer |
Speed: | 800 MT/s .. 1400 MT/s |
Capacity: | 4 chips @ 2 Tbit |
Topology: | Charge Trap |
Dies per Chip: | 8 dies @ 256 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
71 per NAND String
90.1% Vertical Efficiency |
Page Size: | 16 KB |
Block Size: | 512 Pages |
Plane Size: | 2048 Blocks |
Type: | LPDDR4-1866 |
---|---|
Name: | SAMSUNG |
Capacity: |
1024 MB
(1x 1024 MB) |
Sequential Read: | 540 MB/s |
---|---|
Sequential Write: | 520 MB/s |
Random Read: | 97,000 IOPS |
Random Write: | 29,000 IOPS |
Endurance: | 5256 TBW |
Warranty: | 5 Years |
MTBF: | 2.0 Million Hours |
Drive Writes Per Day (DWPD): | 3.0 |
Write Cache: | N/A |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | Yes |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Controller:Controller Clock speed: Up to 1 GHz. |