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SK Hynix PC801 512 GB

512 GB
Capacity
Aries
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
SSD Controller
Controller
NAND Die
NAND Die
The SK Hynix PC801 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 256 GB to 2 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the SK Hynix PC801 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Aries (ACNS075 PHC633.00S-2) from SK Hynix, a DRAM cache chip is available. SK Hynix has installed 176-layer TLC NAND flash on the PC801, the flash chips are made by SK Hynix. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly, once it is full, writes complete at 770 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The PC801 is rated for sequential read speeds of up to 7,000 MB/s and 4,700 MB/s write; random IOPS reach up to 960K for reads and 1000K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. SK Hynix guarantees an endurance rating of 300 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 256 GB 512 GB 1 TB 2 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: 2022
Part Number: HFS512GEJ9X101N
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.05 W (Idle)
Unknown (Avg)
7.5 W (Max)

Controller

Manufacturer: SK Hynix
Name: Aries (ACNS075 PHC633.00S-2)
Architecture: ARM 32-bit Cortex-R8 + ARM 32-bit Cortex-M7
Core Count: Quad-Core
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V7
Part Number: H25T1TC48CX588
Type: TLC
Technology: 176-layer
Speed: 1600 MT/s
Capacity: 2 chips @ 2 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 47 mm²
(10.9 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Word Lines: 196 per NAND String
89.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 380 µs
Die Read Speed: 1280 MB/s
Die Write Speed: 168 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4224 Pages
Plane Size: 1084 Blocks

DRAM Cache

Type: LPDDR4
Name: SK Hynix H54G26AYRBX256
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 4,700 MB/s
Random Read: 960,000 IOPS
Random Write: 1,000,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes
Speed when Cache Exhausted: approx. 770 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

ARM 32-bit Cortex-R8/M7 (1-core each, for Host) + Cortex-R8 (2-core for FTL)

NAND Die:

Endurance: 1.500 to 3.000 P.E.C.
tPROG withouth Overhead: ~ 380 µs (accounting for ~ 168 MB/s of throughput per die)
tPROG w/ +/- 25% Overhead: ~ 507 µs (accounting for ~ 126 MB/s of throughput per die)
NAND string : H25G9TC18488 NAND MaxPE cycles: 1500 NAND Freq : 1200 Channel number: 4 CE number : 4 Total Bank: 16 Flash Type: TLC Blocks/CE: 1084 Pages/Block: 4224 Page Size
Feb 19th, 2025 20:25 EST change timezone

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