Capacity: | 500 GB |
---|---|
Variants: | 250 GB 500 GB 1 TB |
Overprovisioning: | 46.3 GB / 10.0 % |
Production: | End-of-life |
Released: | Aug 2020 |
Price at Launch: | 59 USD |
Part Number: | T253TV500G3C301 |
Market: | Consumer |
Form Factor: | 2.5" |
---|---|
Interface: | SATA 6 Gbps |
Protocol: | AHCI |
Power Draw: |
0.41 W (Idle) 1.8 W (Avg) 3.0 W (Max) |
Manufacturer: | Silicon Motion |
---|---|
Name: | SM2258G |
Architecture: | ARC 32-bit |
Core Count: | Single-Core |
Frequency: | 400 MHz |
Process: | 40 nm |
Flash Channels: | 4 |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Micron |
---|---|
Name: | B17A FortisFlash |
Rebranded: | CHPMG7M9052 (Rebranded by Teamgroup) |
Type: | TLC |
Technology: | 64-layer |
Speed: | 50 MT/s .. 667 MT/s |
Capacity: | 2 chips @ 2 Tbit |
ONFI: | 4.0 |
Topology: | Floating Gate |
Process: | 16 nm |
Die Size: | 108 mm² (4.7 Gbit/mm²) |
Dies per Chip: | 4 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
74 per NAND String
86.5% Vertical Efficiency |
Read Time (tR): | 88 µs |
Program Time (tProg): | 930 µs |
Block Erase Time (tBERS): | 15 ms |
Die Read Speed: | 727 MB/s |
Die Write Speed: | 69 MB/s |
Endurance: (up to) |
3000 P/E Cycles
(40000 in SLC Mode) |
Page Size: | 16 KB |
Block Size: | 2304 Pages |
Plane Size: | 504 Blocks |
Type: | DDR3-1600 CL11 |
---|---|
Name: | SAMSUNG K4B4G1646B-KCK0 |
Capacity: |
512 MB
(1x 512 MB) |
Organization: | 4Gx16 |
Sequential Read: | 560 MB/s |
---|---|
Sequential Write: | 510 MB/s |
Random Read: | 90,000 IOPS |
Random Write: | 80,000 IOPS |
Endurance: | 240 TBW |
Warranty: | 3 Years |
MTBF: | 1.0 Million Hours |
Drive Writes Per Day (DWPD): | 0.4 |
SLC Write Cache: | Yes |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
NAND Die:tPROG with some Overhead: ~ 930µs (Avg) |