Thursday, May 29th 2008
Intel and Micron First to Deliver Sub-40nmNAND Flash Memory Device
Today Intel Corporation and Micron Technology introduced the industry's first sub-40 nanometer (nm) NAND memory device, unveiling a 34nm 32 gigabit (Gb) multi-level cell chip. This process technology was jointly developed by Intel and Micron and manufactured by the companies' NAND flash joint venture, IM Flash Technologies (IMFT). It is the smallest NAND process geometry on the market. The 32 Gb NAND chip is the only monolithic device at this density that fits into a standard 48-lead thin small-outline package (TSOP), providing a cost-effective path to higher densities in existing applications. Shipments of customer samples begin in June and mass production is expected during the second half of this year calendar.
"This new 32 Gb device provides the best bit storage density available in the industry," said Brian Shirley, vice president of Micron's Memory Group. "Together with our partners at Intel, we're proud to have now taken the lead in production process technology."
"The introduction of 34nm process technology highlights IMFT's rapid progress and moves us to the forefront of NAND process technology," said Pete Hazen, director of marketing, Intel NAND Products Group. "These advancements will expand the value proposition and accelerate the adoption of solid-state drive (SSD) solutions in computing platforms."
The 34nm 32 Gb chips will be manufactured on 300 millimeter wafers, each producing approximately 1.6 terabytes of NAND. Measuring just 172mmІ, less than the size of a thumbnail, the 34nm 32 Gb chip will cost-effectively enable high-density solid-state storage in small form factor applications.
Based on the 34nm architecture, Intel and Micron also plan to introduce lower density multi-level cell products including single-level cell products, by the end of this year.
Source:
Intel
"This new 32 Gb device provides the best bit storage density available in the industry," said Brian Shirley, vice president of Micron's Memory Group. "Together with our partners at Intel, we're proud to have now taken the lead in production process technology."
"The introduction of 34nm process technology highlights IMFT's rapid progress and moves us to the forefront of NAND process technology," said Pete Hazen, director of marketing, Intel NAND Products Group. "These advancements will expand the value proposition and accelerate the adoption of solid-state drive (SSD) solutions in computing platforms."
The 34nm 32 Gb chips will be manufactured on 300 millimeter wafers, each producing approximately 1.6 terabytes of NAND. Measuring just 172mmІ, less than the size of a thumbnail, the 34nm 32 Gb chip will cost-effectively enable high-density solid-state storage in small form factor applications.
- A single 32 Gb chip could store more than 2,000 high-resolution digital photos or hold up to 1,000 songs on a personal music player.
- Two 8-die stacked packages would realize 64 gigabytes (GBs) of storage, enough for recording anywhere from eight to 40 hours of high-definition video in a digital camcorder.
Based on the 34nm architecture, Intel and Micron also plan to introduce lower density multi-level cell products including single-level cell products, by the end of this year.
5 Comments on Intel and Micron First to Deliver Sub-40nmNAND Flash Memory Device
Looks like at the end of 2008 we will get affordable SSD. Can't wait.