Hynix forms one of the top-tier DRAM manufacturers. On Sunday, the company made it official that its new 1 Gb (128 MB) DDR3 memory chip built on the new 40 nm silicon fabrication process, will enter mass production by the third quarter, and be available to manufacturers soon after. The chip (model: H5TQ1G83CFR) operates with a top-speed of 2,133 Mbps, at a wide range of voltage.

Using the three-dimensional transistor technology, the company has stepped-up productivity by more than 50% over its current DRAM chips built on the 50 nm process. The new technology is said to minimize electric leakages and reduces overall power consumption of the DRAM chip. The new 1Gb memory chip meets Intel's DDR3 DRAM specification compliance and the memory module will be examined for certification by Intel.