Ultrafast Magnetic Reversal Leads the Way for Speedy, Energy-Efficient Memory
Researchers at UC Berkeley and UC Riverside have developed a new, ultrafast method for electrically controlling magnetism in certain metals, a breakthrough that could lead to greatly increased performance and more energy-efficient computer memory and processing technologies. The findings of the group, led by Berkeley electrical engineering and computer sciences (EECS) professor Jeffrey Bokor, are published in a pair of articles in the journals Science Advances (Vol. 3, No. 49, Nov. 3, 2017) and Applied Physics Letters (Vol. III, No. 4, July 24, 2017).
Computers use different kinds of memory technologies to store data. Long-term memory, typically a hard disk or flash drive, needs to be dense in order to store as much data as possible. But the central processing unit (CPU) - the hardware that enables computers to compute - requires its own memory for short-term storage of information while operations are executed. Random Access Memory (RAM) is one example of such short-term memory.
Computers use different kinds of memory technologies to store data. Long-term memory, typically a hard disk or flash drive, needs to be dense in order to store as much data as possible. But the central processing unit (CPU) - the hardware that enables computers to compute - requires its own memory for short-term storage of information while operations are executed. Random Access Memory (RAM) is one example of such short-term memory.