Innodisk, the service-driven flash and DRAM module provider, introduces a brand new DDR4 Mini DIMM DRAM that is fully compliant with ATCA (Advanced Telecom Computing Architecture). Featuring a 228 pin (a mere 0.72" in height) and a capacity of up to 16GB, it is simply the best choice for small, high-speed, large-capacity storage devices.

Innodisk uses original ICs in DDR4 Mini DIMM and has upgraded the transfer speed up to 2400MHz. Its ECC modules are designed to detect and correct single-bit errors that may occur during data storage and transmission. In addition, the DDR4 Mini DIMM series' built-in thermal sensor provides temperature monitoring and system reliability. Innodisk also utilizes value-added conformal coating on the module that protects against moisture, contaminants, dust and acid materials, thus ensuring high-performance operation in harsh environments.

Corsair, a world leader in enthusiast memory, PC hardware and components, is pleased to announce the global availability of its fastest ever Vengeance LPX 128GB, 64GB and 32GB DDR4 kits. Boasting frequencies of up to 3,600MHz, these new XMP 2.0 kits bring high-frequency performance to even the largest capacity DDR4 modules.

Corsair's fastest 128GB DDR4 kit ever, the Vengeance LPX 128GB (4x16GB) 3,000MHz is designed to push Intel's X99 quad-channel platform to the next level, reaching frequencies of 3,000MHz or higher. With full XMP 2.0 support and running at 1.35V with CL16-18-18-36 low latency timings, the kit offers both the massive capacity and high-frequency DDR4 performance required by top-end work stations running the most demanding applications.

Samsung Electronics Co., Ltd., announced today that it is mass producing the industry's first "through silicon via" (TSV) double data rate-4 (DDR4) memory in 128-gigabyte (GB) modules, for enterprise servers and data centers. Following Samsung's introduction of the world-first 3D TSV DDR4 DRAM (64GB) in 2014, the company's new TSV registered dual inline memory module (RDIMM) marks another breakthrough that opens the door for ultra-high capacity memory at the enterprise level. Samsung's new TSV DRAM module boasts the largest capacity and the highest energy efficiency of any DRAM modules today, while operating at high speed and demonstrating excellent reliability.

"We are pleased that volume production of our high speed, low-power 128GB TSV DRAM module will enable our global IT customers and partners to launch a new generation of enterprise solutions with dramatically improved efficiency and scalability for their investment," said Joo Sun Choi, executive vice president, Memory Sales and Marketing, Samsung Electronics. "We will continue to expand our technical cooperation with global leaders in servers, consumer electronics and emerging markets, where consumers can benefit from innovative technology that enhances their productivity and the overall user experience."

HyperX, a division of Kingston Technology Company, Inc., the independent world leader in memory products, today announced the addition of HyperX FURY DDR3L high-performance, low-voltage DIMMs, as well as brand-new HyperX Impact DDR4 SO-DIMMs.

HyperX FURY DDR3L runs at a low 1.35V, meaning less power consumption and less heat. It is available in 1600MHz and 1866MHz frequencies, and comes in 8GB or 16GB dual-channel kits of two as well as 4GB and 8GB modules featuring a stylish asymmetrical heatspreader in black with black PCB for a stand-out system. HyperX FURY DDR3L is fully Plug-and-Play (PnP) enabled for automatic overclocking out of the box and is perfect for entry-level gamers and enthusiasts who want a cost-efficient upgrade for the 6th Generation Intel Core Processors (former codename Skylake-S) and 100 Series Chipset.

Crucial, a leading global brand of memory and storage upgrades, is now sampling Crucial DDR4 2400MT/s 8Gb-based RDIMM, LRDIMM, and ECC UDIMM server modules through its Technology Enablement Program. Engineered to enable higher density modules, 8Gb-based DDR4 memory allows for increased performance, bandwidth, and energy efficiency.

Higher density modules, when combined with the next DDR4 speed increase of 2400MT/s, create greater channel bandwidth and channel density, as well as increased energy efficiency. Ultimately, these benefits provide more value per gigabit than current 4Gb-based offerings. Taken together, the increase in density, bandwidth, and value deliver a lower total cost of ownership for users.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, has announced that its JC-45 Committee has approved the first standards for support of "hybrid" DDR4 memory modules which are defined as modules that plug into standard dual in-line memory module (DIMM) sockets and appear like a DDR4 SDRAM to the system controller, yet contain non-volatile (NV) memories such as NAND Flash on the module. These hybrid module families are referred to as Non-Volatile DIMMs, or NVDIMMs, and they may share the memory channel with other standard DDR4 DIMMs. Publication is expected later this year.

"The introduction of hybrid memory modules into system platform architectures adds new levels of functionality to the computer memory hierarchy," said Mian Quddus, Chairman of JEDEC's JC-45 Committee for Dynamic Random Access Memory (DRAM) Modules. He added, "Non-volatile memory may be used for data persistence, mass storage, and the door is now opened for innovative new applications using the high speed of the DRAM channel. NAND Flash is the first non-volatile memory to be incorporated into the channel; however, the industry is poised for other memory types to be included as well. The framework established by JEDEC is flexible enough to allow for a variety of memories to be included under the 'hybrid' umbrella."

Intel's future enterprise computing business, post-2017, could see a unification of its 2-socket (2S), 4-socket (4S), and >8-socket (8S+) platforms unify into one, codenamed "Purley." The platform will consist of multiple SKUs, but a common socket type (Socket-P), and a new interconnect technology replacing InfiniBand, which will wire the sockets and core-logic across multiple server blades, together. Called Omni-Path Interconnect, the tech appears to be fiber-optic at the physical layer, with extremely thin cables, and bandwidths could start at 100 Gbps, for the first generation. The controller driving it will be codenamed "Storm Lake." The inter-socket communication will be care of a newer 10.4 GT/s UPI interconnect, each socket will feature three such UPI channels. The platform will support up to eight sockets per blade, with more sockets across neighboring blades over Omni-Path.

"Purley" will feature a new platform core-logic, in the form of the "Lewisburg" PCH. It will feature the new DMI3 chipset-bus, which is PCI-Express 3.0 x4 at the physical layer. This chipset will support up to four 10 GbE interfaces. On the processor front, will be as processors based on the "Skylake" micro-architecture. Intel will carve out several silicons based on "Skylake," the biggest one will feature 28 physical CPU cores, with HyperThreading enabling 56 logical CPUs, and for the first time, a six-channel (384-bit wide) DDR4 integrated memory controller, with support for DDR4-2666. On the flip side, this IMC only supports one DIMM per channel (DPC). The 3DPC support from previous platforms is gone. These chips will be built on the 14 nm silicon fab process, and their TDP will range between 45W and 165W, depending on the number of cores and clock speeds.

With 4K-ready media center PCs upon us, Intel decided to equip one of its next-gen NUC (next unit of computing) desktops with one of its most powerful integrated graphics solutions, which can either accelerate 4K video, 1080p to 4K upscaling GPU algorithms (think MadVR), or make for a reasonably fast 720p or 900p gaming machine. The NUC5i7RYH from Intel features a Core i5-5557U processor, which integrates Iris 6100 Graphics. Based on the "Broadwell-GT3" silicon, Iris 6100 offers 48 execution units, between 300 and 1100 MHz GPU core frequency, and an L4 eDRAM cache. A passive cooling solution deals with this 28W TDP chip. Other specs include two DDR3-1866 SO-DIMM slots, supporting up to 16 GB of memory, HDMI 1.4a and DisplayPort 1.2 display-outputs, four USB 3.0 ports, including one high-current port.

SMART Modular Technologies, Inc., a leading designer, manufacturer and supplier of specialty memory and storage solutions, including memory modules, flash memory cards and other memory and solid state storage products, today announced the expansion of its NVDIMM product line with its new 8GB and 16GB DDR4 NVDIMMs available in a single rank, four bit configuration. SMART's full lineup of DDR4 NVDIMMs now include two configurations; a single rank eight bit configuration in 4GB and 8GB densities, and the new 8GB and 16GB options. The new NVDIMMs are targeted for server and storage applications to improve performance.

NVDIMMs transform main DRAM memory into persistent memory resulting in higher performing servers by allowing big data, transaction logs, and other latency and performance-sensitive data to be accessed at DRAM speeds without the risk of data loss. Rather than reading and writing big data or transaction logs to traditional storage media such as SATA SSDs, PCIe NVMe SSDs, or HDDs, they can be written to and read from main memory without the risk of data being lost due to any sudden power loss (SPL) event. Server performance in terms of lower latency, higher IOPS, and greater endurance all increase dramatically with the use of SMART's NVDIMMs.

Transcend Information, Inc. (Transcend), a leading manufacturer of industrial-grade products, is proud to announce the launch of the DDR4 memory module series. The series includes DDR4 2133 MHz UDIMMs, RDIMMs, ECC-DIMMs and ECC SO-DIMMs, which are fully compatible with the latest Intel Xeon E5-2600 v3 server family processor, Haswell-E CPU with X99 chipset and micro servers. Transcend's DDR4 series boasts superior performance, 1.2V ultra-low power consumption, and increased reliability. All these features make it perfect for cloud computing, virtualization, and high-performance computing technologies.

Transcend's DDR4 memory modules are constructed with top-quality DRAM chips that deliver stable performance and durability. With advanced DDR4 technologies, Transcend's DDR4 memory modules utilize higher density components, allowing capacity options ranging from 4GB to 32GB. Offering high speed transmission of 2133MHz and up to 17GB/s of memory bandwidth, Transcend's DDR4 DIMMs comprehensively promote the system performance.

Intel's next-generation NUC (next unit of computing) compact desktop, believed to be based on the company's Core "Broadwell" processor, was spotted on the company website. Pictures reveal that the next NUC could be pocketable, yet have the computing power of a full-blown desktop. The NUC system board features some of the newer connectivity, such as DDR3L SO-DIMM slots, M.2 slots, an mPCIe slot, an additional SATA 6 Gb/s port, and processors from the Core i3 and Core i5-5000 series. Intel could unveil the next-gen NUC in January 2015, likely at CES 2015.

Based on the Intel H97 chipset, Shuttle today launches the XPC Barebone SH97R6, a solution measuring just 20 cm in height and designed for the rapid creation of customised Mini PCs. Motherboard, cooling system and power supply come pre-installed enabling speedy assembly.

The chassis, case cover and front panel are all made from strong lightweight aluminium. Measuring just 33.2 x 21.6 x 19.8 cm (DWH), this model opens up new options for stationary and mobile applications with multiple high-resolution monitors.

Crucial, a leading global brand of memory and storage upgrades, has expanded its DDR4 memory portfolio with LRDIMM and VLP RDIMM modules. Designed to enable next-generation enterprise environments with increased speed, bandwidth, and energy efficiency, Crucial DDR4 load reduced DIMMs (LRDIMMs) and very low profile registered DIMMS (VLP RDIMMs) are available for immediate purchase through select global channel partners.

By utilising a memory buffer chip that helps reduce the electrical load presented to the memory bus, Crucial DDR4 LRDIMMs allow for more DIMMs per channel and are up to 50 percent more energy efficient and deliver up to 50 percent more memory bandwidth than DDR3 LRDIMMs. Furthermore, by using less voltage and standby current, Crucial DDR4 LRDIMMs transmit power in a more efficient manner to the CPU, allowing for additional power savings and lower total cost of ownership.

Samsung Electronics, Ltd. announced today that it has started mass producing the industry's first 64 gigabyte (GB), double data rate-4 (DDR4), registered dual Inline memory modules (RDIMMs) that use three dimensional (3D) "through silicon via" (TSV) package technology. The new high-density, high-performance module will play a key role in supporting the continued proliferation of enterprise servers and cloud-based applications, as well as further diversification of data center solutions.

The new RDIMMs include 36 DDR4 DRAM chips, each of which consists of four 4-gigabit (Gb) DDR4 DRAM dies. The low-power chips are manufactured using Samsung's most advanced 20-nanometer (nm) class* process technology and 3D TSV package technology.

SanDisk Corporation (NASDAQ:SNDK), a global leader in flash storage solutions, today announced broad support for VMware Horizon 6 and Virtual SAN with a series of virtual desktop infrastructure (VDI) and end-user computing (EUC) solutions for Horizon 6, utilizing the award-winning ULLtraDIMM solid state drive (SSD) and Fusion ioMemory.

When coupled with VMware's Horizon 6, ULLtraDIMM and Fusion ioMemory allow customers to deploy high-performance, cost-effective virtual desktop infrastructure solutions and increase virtual desktop density. Additionally, through the combination of solid-state hardware and software technology, SanDisk enables enterprise organizations to select the right deployment option for their environment, providing greater flexibility and reducing barriers to adoption.

Corsair, a leader in high-performance PC hardware, today announced the availability of Corsair Vengeance LPX and Dominator Platinum lines of high-speed DDR4 computer memory. This new generation of memory ushers in a new age of ultrafast computing with optimizations such as increased DRAM bandwidth, higher bus frequencies, lower power usage, and higher reliability.

Corsair Vengeance LPX and Dominator Platinum DDR4 memory kits are validated with motherboard partners (ASUS, ASRock, EVGA, Gigabyte, and MSI) and use the new XMP 2.0 profile to deliver easy, reliable overclocking performance with the upcoming next-generation Intel X99 platforms and Intel Core i7 processors (codenamed Haswell-E). The Vengeance LPX and Dominator Platinum memory kits are supplied with a limited lifetime warranty.

SanDisk Corporation, a global leader in flash storage solutions, and Super Micro Computer, Inc., today announced that the SanDisk ULLtraDIMM solid state drive (SSD), the industry's first enterprise-class, ultra-low latency, memory-channel connected storage solution, will begin shipping in Supermicro's Green SuperServer and SuperStorage platforms. Adding flash storage on the memory bus provides Supermicro with a powerful solution to help customers address growing data center application performance requirements without a significant infrastructure investment.

"The ULLtraDIMM SSD was designed to expand the reach of flash storage throughout the data center and scale to meet the requirements of any enterprise application - no matter how bandwidth or capacity intensive," said John Scaramuzzo, senior vice president and general manager, Enterprise Storage Solutions at SanDisk. "We are very excited to partner with Supermicro in offering this innovative, ultra-low latency storage solution to help their customers accelerate the performance of their cloud, virtualization, HPC and other applications and experience the benefits of a flash-transformed data center."

Traditional PC providers are targeting the upcoming vast wave of replacement of enterprises'equipment caused by termination of Window XP system update service. Besides, a new generation of Internet of Things, cloud-based services and Smart Automation are booming and growing. These have created a great demand for terminal devices, along with the ever-increasing applications.Given the trend of compactness, it is very important that memory module features both simplicity and flexibility, as the storage devices designed for more and more system service resources and for the purpose of thinner hardware appearance.

Apacer, the leading professional manufacturer of memory modules, presented Combo SDIMM in Computex this year. The product derives from an innovative concept and underlines its innovative R&D design that integrates SSD (Solid State Drive) and DRAM on the DRAM Module, adding a new storage choice for principal customers of embedded industrial computer providers. It takes up less motherboard space occupied by storage devices and memory modules. Users can expand SSD storage capacity anytime. Currently Apacer has launched two SSD options, including M.2 NGFF and CFast memory card, both supporting SATA 3.0 (6Gb/s) interface. It is a great breakthrough in storage device field.

Micron Technology, Inc., one of the world's leading providers of advanced semiconductor solutions, today announced the introduction of a monolithic 8 Gb DDR3 SDRAM component, enhancing its leadership position as a diverse memory solutions provider for enterprise applications such as data analytics. This new design is based on Micron's latest-generation 25 nm DRAM manufacturing process.

DDR3 is the mainstream DRAM technology for the enterprise market, and the addition of an 8 Gb monolithic component will enable cost-effective, high-capacity solutions optimized to support large-scale, data-intensive workloads.

I'M Intelligent Memory, a Hong Kong based fabless DRAM manufacturer, announces availability of the world's first 8 Gigabit (Gb) DDR3 components with a single chip-select, doubling the amount of memory per chip compared to other DDR3 DRAM devices on the market. Based on these new 8 Gb components, I'M is also introducing the first 16 Gigabyte (GB) DDR3 UDIMM and SO-DIMM memory modules with optional ECC error-correction.

The JEDEC specification JESD79-3 has always allowed an 8 Gb density for DDR3 memory devices. While most DRAM manufactures are waiting for a 2x nm process to fit such high memory capacity into a single DRAM IC package, I'M has developed its own a revolutionary way to manufacture 8 Gb DDR3 components with single chip-select utilizing existing 30 nm manufacturing technologies.

SMART Modular Technologies, Inc., a leading designer, manufacturer and supplier of specialty memory and storage solutions, including memory modules, flash memory cards and other memory and solid state storage products, has announced today that it has begun shipments in sample quantities of DDR4 memory modules. These samples are for qualification in next generation server, storage and networking applications which are expected to launch later in 2014 through 2015.

Currently, SMART's lineup of available DDR4-2133 1.2V modules includes VLP (Very Low Profile) and standard height RDIMMs up to 16 GB, and ECC SO-DIMMs up to 8 GB. These modules include improved capacity and performance scalability, improved power efficiency, and enhanced system reliability, which are all benefits driving the transition to DDR4.

ADATA Technology Co., Ltd., a leading manufacturer of high-performance DRAM modules and NAND Flash application products, collaborated with AsRock to run a demo system equipped with ADATA's overclocking memory modules and AsRock's motherboard, whose performance reached a breakthrough record. ADATA's XPG series DDR3 3100 memory modules going with AsRock's the latest Z97 OC Formula motherboard and Devil Canyon I7 4790K CPU processor reached the 3400MHz outstanding performance, which will be displaying at ADATA's booth and bring you with an amazing experience.

ADATA XPG Series exclusively designed for overslockers can meet the needs of professional gamers with the ultra-high speed performance and ultra-fast cool down function. At this year's Computex, ADATA will be showcasing its latest XPG Series V3, DDR3 3000 8GB x 4, whose 32GB capacity can match ASRock Z97 OC Formula motherboard bringing out a steady speed of 3000MHz, and fulfill overclockers' picky needs of high capacity and high performance as well. In addition, its replaceable heat sink design allows users to customize the memory modules' color to complement their high performance system. ADATA is the first one who is able to steadily provide customers with 8GB x 4 pack memory module house in the industry.

Diablo Technologies today announced that it will present on Memory Channel Storage (MCS) at EMC World 2014 in Las Vegas. Experts at Diablo will demonstrate the performance of MCS-based devices for virtualized environments in the VMware Theatre on May 7 at 4:15 p.m. PDT.

According to TechNavio, the global enterprise server virtualization market will grow 32 percent over the period 2010-2014. With the increasing adoption of virtualized computing, the need for higher I/O throughput and capacity has reached an important turning point. Traditionally, storage architectures have been unable to leverage the vast processing capabilities of modern CPUs. As a result, the number of virtual machines (VMs) that can be serviced on a single physical server is limited by the properties of pre-existing storage solutions. By leveraging the parallelism of the memory subsystem, Diablo's MCS technology enables ultra-low response times to VMs while simultaneously servicing heavy I/O workloads.

Micron Technology, Inc., a leading provider of advanced memory and storage solutions for enterprise data centers and high-performance computing applications, today announced it is ramping production of DDR4 memory to support upcoming Intel CPU launches. The improved power and performance of DDR4 technology is a critical requirement for the growing enterprise computing market, delivering a power improvement of up to 35% compared to standard DDR3.

Micron is ramping its 4 Gb-based DDR4 module production at 2133 megatransfers per second (MT/s) in support of Intel's Xeon processor E5-2600 v3 product family-based systems. Micron is also sampling a 2400 MT/s device in anticipation of follow-on products targeted for 2015.

SMART Modular Technologies, Inc., a leading independent designer, manufacturer and supplier of value added subsystems including memory modules, flash memory cards and other solid state storage products, has been actively involved in developing and standardizing DDR4 module technology and today announced the first products in its DDR4 DRAM module portfolio.

SMART's initial lineup of DDR4-2133 modules are loaded with technology advancements inherent to the DDR4 platform. Those advancements include power efficiencies, faster speeds and higher densities, all key benefits for next generation server, storage and networking applications.