SK hynix has returned to Santa Clara, California to present its full array of groundbreaking AI memory technologies at FMS: the Future of Memory and Storage (FMS) 2024 from August 6-8. Previously known as Flash Memory Summit, the conference changed its name to reflect its broader focus on all types of memory and storage products amid growing interest in AI. Bringing together industry leaders, customers, and IT professionals, FMS 2024 covers the latest trends and innovations shaping the memory industry.

Participating in the event under the slogan "Memory, The Power of AI," SK hynix is showcasing its outstanding memory capabilities through a keynote presentation, multiple technology sessions, and product exhibits.

SK hynix held a press conference unveiling its vision and strategy for the AI era today at its headquarters in Icheon, Gyeonggi Province, to share the details of its investment plans for the M15X fab in Cheongju and the Yongin Semiconductor Cluster in Korea and the advanced packaging facilities in Indiana, U.S.

The event, hosted by theChief Executive Officer Kwak Noh-Jung, three years before the May 2027 completion of the first fab in the Yongin Cluster, was attended by key executives including the Head of AI Infra Justin (Ju-Seon) Kim, Head of DRAM Development Kim Jonghwan, Head of the N-S Committee Ahn Hyun, Head of Manufacturing Technology Kim Yeongsik, Head of Package & Test Choi Woojin, Head of Corporate Strategy & Planning Ryu Byung Hoon, and the Chief Financial Officer Kim Woo Hyun.

SK hynix showcased its next-generation technologies and strengthened key partnerships at the TSMC 2024 Technology Symposium held in Santa Clara, California on April 24. At the event, the company displayed its industry-leading HBM AI memory solutions and highlighted its collaboration with TSMC involving the host's CoWoS advanced packaging technology.

TSMC, a global semiconductor foundry, invites its major partners to this annual conference in the first half of each year so they can share their new products and technologies. Attending the event under the slogan "Memory, the Power of AI," SK hynix received significant attention for presenting the industry's most powerful AI memory solution, HBM3E. The product has recently demonstrated industry-leading performance, achieving input/output (I/O) transfer speed of up to 10 gigabits per second (Gbps) in an AI system during a performance validation evaluation.

Samsung isn't the only Korean memory giant showing off its latest tech at the upcoming IEEE Solid State Circuit Conference (SSCC) in February, 2024; it will be joined by SK Hynix, which will demo competing tech across both its volatile and non-volatile memory lines. To begin with, SK Hynix will be the second company to show off a GDDR7 memory chip, after Samsung. The SK Hynix chip is capable of 35.4 Gbps speeds, which is lower than the 37 Gbps Samsung is showing off, but at the same 16 Gbit density. This density allows the deployment of 16 GB of video memory across a 256-bit memory bus. Not all next-generation GPUs will max out 37 Gbps, some may run at lower memory speeds, and they have suitable options in the SK Hynix product stack. Much like Samsung, SK Hynix is implementing PAM3 I/O signaling, and a proprietary low-power architecture (though the company wouldn't elaborate on whether it's similar to the four low-speed clock states as the Samsung chips).

GDDR7 is bound to dominate the next generation of graphics cards across the gaming and pro-vis segments; however the AI HPC processor market will continue to bank heavily on HBM3E. SK Hynix has innovated here, and will show off a new 16-high 48 GB (384 Gbit) HBM3E stack design that's capable of 1280 GB/s over a single stack. A processor with even four such stacks will have 192 GB of memory at 5.12 TB/s of bandwidth. The stack implements a new all-around power TSV (through silicon via) design, and a 6-phase RDQS (read data queue strobe) scheme, for TSV area optimization. Lastly, the SK Hynix sessions will also include the first demo of its ambitious LPDDR5T (LPDDR5 Turbo) memory standard aimed at smartphones, tablets, and thin-and-light notebooks. This chip achieves a data-rate of 10.5 Gb/s per pin, and a DRAM voltage of 1.05 V. Such high data speeds are possible thanks to a proprietary parasitic capacitance reduction technology, and a voltage offset calibrated receiver tech.

SK hynix Inc. announced today that it recorded an operating profit of 346 billion won in the fourth quarter of last year amid a recovery of the memory chip market, marking the first quarter of profit following four straight quarters of losses. The company posted revenues of 11.31 trillion won, operating profit of 346 billion won (operating profit margin at 3%), and net loss of 1.38 trillion won (net profit margin at negative 12%) for the three months ended December 31, 2023. (Based on K-IFRS)

SK hynix said that the overall memory market conditions improved in the last quarter of 2023 with demand for AI server and mobile applications increasing and average selling price (ASP) rising. "We recorded the first quarterly profit in a year following efforts to focus on profitability," it said. The financial results of the last quarter helped narrow the operating loss for the entire year to 7.73 trillion won (operating profit margin at negative 24%) and net loss to 9.14 trillion won (with net profit margin at negative 28%). The revenues were 32.77 trillion won.

SK hynix Inc. announced today that it has started supplying its customers with 16 gigabyte (GB) packages of Low Power Double Data Rate 5 Turbo (LPDDR5T), the fastest mobile DRAM available today that can transfer 9.6 gigabits per second (Gbps). Since the successful development of its LPDDR5T in January, SK hynix has been preparing to commercialize the product by conducting performance verification with global mobile application processor (AP) manufacturers.

SK hynix explained that LPDDR5T is the optimal memory to maximize the performance of smartphones, with the highest speed ever achieved. The company also emphasized that it would continue to expand the application range of this product and lead the generation shift in the mobile DRAM sector. The LPDDR5T 16 GB package operates in the ultra-low voltage range of 1.01 to 1.12 V set by the Joint Electron Device Engineering Council (JEDEC), and can process 77 GB of data per second, which is equivalent to transferring 15 full high-definition (FHD) movies in one second.

MediaTek today announced the Dimensity 9300, its newest flagship mobile chip with a one-of-a-kind All Big Core design. The unique configuration combines extreme performance with MediaTek's industry-leading power efficiency to deliver unmatched user experiences in gaming, video capture and on-device generative AI processing.

"The Dimensity 9300 is MediaTek's most powerful flagship chip yet, bringing a huge boost in raw computing power to flagship smartphones with our groundbreaking All Big Core design," said Joe Chen, President at MediaTek. "This unique architecture, combined with our upgraded on-chip AI Processing Unit, will usher in a new era of generative AI applications as developers push the limits with edge AI and hybrid AI computing capabilities."

SK hynix Inc. announced today that it has started commercialization of the LPDDR5T (Low Power Double Data Rate 5 Turbo), the world's fastest DRAM for mobile with 9.6 Gbps speed. The company said that it has obtained the validation that the LPDDR5T is compatible with Qualcomm Technologies' new Snapdragon 8 Gen 3 Mobile Platform, marking the industry's first case for such product to be verified by the U.S. company.

SK hynix has proceeded with the compatibility validation of the LPDDR5T, following the completion of the development in January, with support from Qualcomm Technologies. The completion of the process means that it is compatible with Snapdragon 8 Gen 3. With the validation process with Qualcomm Technologies, a leader in wireless telecommunication products and services, and other major mobile AP (Application Processor) providers successfully completed, SK hynix expects the range of the LPDDR5T adoption to grow rapidly.