While Intel's primary product focus is on the processors, or brains, that make computers work, system memory (that's DRAM) is a critical component for performance. This is especially true in servers, where the multiplication of processing cores has outpaced the rise in memory bandwidth (in other words, the memory bandwidth available per core has fallen). In heavy-duty computing jobs like weather modeling, computational fluid dynamics and certain types of AI, this mismatch could create a bottleneck—until now.

After several years of development with industry partners, Intel engineers have found a path to open that bottleneck, crafting a novel solution that has created the fastest system memory ever and is set to become a new open industry standard. The recently introduced Intel Xeon 6 data center processors are the first to benefit from this new memory, called MRDIMMs, for higher performance—in the most plug-and-play manner imaginable.

In actively verifying its next-generation CAMM2 (Compression Attached Memory Module 2) memory modules, global memory leader Team Group Inc. today announced two specifications: consumer-grade CAMM2 DDR5 7200 MHz and industrial-grade CAMM2 DDR5 6400 MHz. These new products provide expanded options for the memory market, delivering faster data transfer speeds, enhanced performance, and greater user flexibility.

The consumer-grade CAMM2 memory from Team Group operates at DDR5 7200 MHz CL34-42-42-84 under manual overclocking, delivering exceptional performance. Compared to the default JEDEC specification, the module offers write, copy, and read speeds of up to 108,000 MB/s, 106,000 MB/s, and 117,000 MB/s, respectively, while reducing overall latency to 55ns. The module delivers smoother performance when running large applications, gaming, or multitasking. The potential to achieve ultra-high frequencies of 8000-9000 MHz in the future further underscores its superior capabilities. In addition, Team Group Industrial is developing an industrial-grade CAMM2 memory, optimized for DDR5 6400 MHz, which is designed for industrial control, edge computing, and AI applications, providing robust support for high-performance computing and real-time data processing. The module will play a critical role in the development of technologies such as smart manufacturing, autonomous driving, and smart cities by improving both performance and reliability.

Innodisk, a leading global AI solution provider, announces its DDR5 6400 DRAM series, featuring the industry's largest 64 GB single-module capacity. This 6400 series is purpose-built for data-intensive applications in AI, telehealth, and edge computing, where high performance at the edge is crucial. Available in versatile form factors, including CUDIMM, CSODIMM, and RDIMM, the series delivers unmatched speed, stability, and capacity to meet the rigorous demands of modern edge AI and industrial applications.

The DDR5 6400 series delivers a data transfer rate of 6400 MT/s, offering a 14% boost in speed over previous generations and doubling the maximum capacity to 64 GB. These enhancements make it an optimal choice for applications like Large Language Models (LLMs), generative AI, autonomous vehicles, and mixed reality, which require high-speed, reliable data processing in real time.

Kingston Technology Company, Inc., a world leader in memory products, announced the upcoming release of Kingston FURY Renegade DDR5 CUDIMMs, compatible with Intel's new 800-series chipset (formerly codenamed Arrow Lake). Intel's 800-series chipset is the first platform to utilize Clock Drivers on CUDIMMs (Clocked Unbuffered Dual Inline Memory Modules). At 6400 MT/s DDR5, JEDEC mandates the inclusion of a Client Clock Driver (CKD) on UDIMMs and SODIMMs. This component buffers and redrives the clock signal from the processor, enhancing signal integrity to the module. To distinguish these advanced modules from standard DDR5 UDIMMs and SODIMMs, JEDEC has designated them as CUDIMMs and CSODIMMs, respectively.

Kingston FURY Renegade RGB and non-RGB CUDIMM modules start at an overclocked speed of 8400 MT/s and are available as 24 GB single modules and 48 GB dual channel kits. Since CUDIMMs and UDIMMs share the same 288-pin connector, Kingston FURY UDIMMs with XMP and EXPO profiles are also compatible with Intel 800-series motherboards. However, it's recommended to verify compatibility through the motherboard manufacturer's QVL (Qualified Vendor List) or by checking the Kingston Configurator for supported speeds and capacities.

Team Group Industrial has officially introduced the industry's first industrial-grade DDR5 6400 MHz CU-DIMM/CSO-DIMM memory modules. The innovative product addresses challenges posed by high-frequency operation on signal stability by incorporating a specialized component known as the Client Clock Driver (CKD), which effectively buffers and drives clock signals, ensuring the signals remain stable and complete even under high-frequency conditions. This advancement sets a new benchmark in industrial storage technology, enhancing reliability and performance for demanding applications.

Team Group utilizes DDR5 Clocked Unbuffered Dual Inline Memory Module technology, which enables frequency and voltage adjustments based on system load and operating conditions, facilitating exceptional data transmission speeds and optimized power consumption performance, fully supporting the dynamic load requirements prevalent in industrial applications, and delivering solutions with outstanding performance and reliability.

SK hynix is showcasing its leading AI and data center memory products at the 2024 Open Compute Project (OCP) Global Summit held October 15-17 in San Jose, California. The annual summit brings together industry leaders to discuss advancements in open source hardware and data center technologies. This year, the event's theme is "From Ideas to Impact," which aims to foster the realization of theoretical concepts into real-world technologies.

In addition to presenting its advanced memory products at the summit, SK hynix is also strengthening key industry partnerships and sharing its AI memory expertise through insightful presentations. This year, the company is holding eight sessions—up from five in 2023—on topics including HBM and CMS.

KLEVV, the leading consumer memory and storage brand introduced by Essencore, today announces its first-ever CU-DIMM & CSO-DIMM memory modules, which work seamlessly with the latest Intel Core Ultra (Series 2) "Arrow Lake-S" Processors/ Z890 platform to unleash the true DDR5 performance. KLEVV's next-generation DDR5 memory lineup receives a substantial performance boost with the integration of advanced Client Clock Driver (CKD) technology. Incorporated via a small integrated circuit (IC) directly on the DIMM, CKD IC enhances the module's speed and efficiency for both desktop and laptop applications. By regenerating the memory chips' clock signal, it improves stability, supports higher operating frequencies, and minimizes electrical interference and signal degradation—pushing the boundaries of memory performance.

Designed for both performance desktop and laptop systems, KLEVV's new Standard CU-DIMM and CSO-DIMM memory modules combine the brand's renowned quality with cutting-edge DDR5 technology, making them ideal for both casual and professional users. Leveraging the innovative CKD architecture, these modules deliver exceptional stability and reliability, even at high speeds, effectively mitigating electrical interference that could otherwise hinder performance. With this advanced design, users can count on smooth, efficient operation, even under heavy workloads.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced upcoming raw card designs currently in development in JEDEC's JC-45 Committee for DRAM Modules in collaboration with the JC-40 and JC-42 Committees. These raw card memory device standards are intended for use in client computing applications such as laptops and desktops and will be supported by related appendix specifications. The forthcoming raw cards will also complement two DDR5 Clock Driver standards published earlier this year: JESD323: DDR5 Clocked Unbuffered Dual Inline Memory Module (CUDIMM) Common Specification and JESD324: DDR5 Clocked Small Outline Dual Inline Memory Module (CSODIMM) Common Specification.

Integrating a Clock Driver (CKD) into a DDR5 DIMM provides numerous advantages, particularly in memory stability and performance, and enhances signal integrity and reliability at high speeds. By regenerating the clock signal locally on the DIMM, a CKD ensures stable operation even at elevated clock speeds. With a DDR5 CKD, DIMM data rates can be increased from 6400 Mbps to 7200 Mbps in the initial version of the standard, and targeting up to 9200 Mbps in future versions.

Rambus Inc., a premier chip and silicon IP provider making data faster and safer, today unveiled industry-first, complete memory interface chipsets for Gen 5 DDR5 RDIMMs and next-generation DDR5 Multiplexed Rank Dual Inline Memory Modules (MRDIMMs). These innovative new products for RDIMMs and MRDIMMs will seamlessly extend DDR5 performance with unparalleled bandwidth and memory capacity for compute-intensive data center and AI workloads.

"The voracious memory demands of AI and HPC require the relentless pursuit of higher performance through continued innovation and technology leadership," said Sean Fan, chief operating officer at Rambus. "With our 30-plus years of renowned high-speed signal integrity and memory system expertise, the Rambus Gen5 RCD, and next-generation MRCD, MDB, and PMIC will be critical enabling chips in future-generation servers leveraging DDR5 RDIMM 8000 and MRDIMM 12800."

Advantech, a global leader in embedded computing, is excited to announce the release of the SQRAM CXL 2.0 Type 3 Memory Module. Compute Express Link (CXL) 2.0 is the next evolution in memory technology, providing memory expansion with a high-speed, low-latency interconnect designed to meet the demands of large AI Training and HPC clusters. CXL 2.0 builds on the foundation of the original CXL specification, introducing advanced features such as memory sharing, and expansion, enabling more efficient utilization of resources across heterogeneous computing environments.

Memory Expansion via E3.S 2T Form Factor
Traditional memory architectures are often limited by fixed allocations, which can result in underutilized resources and bottlenecks in data-intensive workloads. With the E3.S form factor, based on the EDSFF standard, the CXL 2.0 Memory Module overcomes these limitations, allowing for dynamic resource management. This not only improves performance but reduces costs by maximizing existing resources.

BIWIN unveils the DW100 RGB DDR5 OC CUDIMM, innovative CUDIMM technology that delivers the fastest speed of 9200 MT/s with an ultra-low CAS latency of CL42. Biwin DW100 RGB DDR5 OC CUDIMM brings high-end features including peak speeds, advanced thermal management, and customizable RGB lighting for a superior memory upgrade that gamers dream of.

Designed for high-speed computing, this module leverages the expertise of the Biwin OC Lab to deliver top-tier overclocking performance. At the core of the lab's innovation is the advanced manufacturing process that meticulously selects the finest semiconductor materials to meet extreme performance standards.

Innodisk, a leading global AI solution provider, continues to push the boundaries of innovation with the launch of its cutting-edge Compute Express Link (CXL) Memory Module, which is designed to meet the rapid growth demands of AI servers and cloud data centers. As one of the few module manufacturers offering this technology, Innodisk is at the forefront of AI and high-performance computing.

The demand for AI servers is rising quickly, with these systems expected to account for approximately 65% of the server market by 2024, according to Trendforce (2024). This growth has created an urgent need for greater memory bandwidth and capacity, as AI servers now require at least 1.2 TB of memory to operate effectively. Traditional DDR memory solutions are increasingly struggling to meet these demands, especially as the number of CPU cores continues to multiply, leading to challenges such as underutilized CPU resources and increasing latency between different protocols.

V-COLOR is set to revolutionize the future of memory technology with the launch of the world's first RGB DDR5 O CUDIMM (High Speed Overclocked CUDIMM). This groundbreaking innovation for the next-generation desktop platform, offering unmatched speeds and efficiency for desktop applications. This memory module has a new heatsink patent (Patent No. 113208127) to increase heat dissipation efficiency to a new level, and the introduction of the exclusive light guide rod patented coating technology (Patent No. M653290) allows the light guide rod to attract attention regardless of whether it has RGB effects or not.

The DDR5 Clocked Unbuffered Dual Inline Memory Module (CUDIMM) technology dynamically adjusts clock frequency and voltage based on workload and system conditions. This cutting-edge capability results in faster data transmission, lower power consumption, and enhanced stability, making it a game-changer in the industry.

Samsung Electronics Co. is putting a lot of effort into securing its involvement in next-generation memory technology, CXL (Compute Express Link). In a media briefing on Thursday, Jangseok Choi, vice president of Samsung's new business planning team, announced plans to mass-produce 256 GB DRAM supporting CXL 2.0 by the end of this year. CXL technology promises to significantly enhance the efficiency of high-performance server systems by providing a unified interface for accelerators, DRAM, and storage devices used with CPUs and GPUs.

The company projects that CXL technology will increase memory capacity per server by eight to ten times, marking a significant leap in computing power. Samsung's long investment in CXL development is now in the final stages with the company currently testing products with partners for performance verification, Samsung recently established the industry's first CXL infrastructure certified by Red Hat. "We expect the CXL market to start blooming in the second half and explosively grow from 2028," Choi stated, highlighting the technology's potential to expand memory capacity and bandwidth far beyond current limitations.

SK hynix presented its leading AI memory solutions at COMPUTEX Taipei 2024 from June 4-7. As one of Asia's premier IT shows, COMPUTEX Taipei 2024 welcomed around 1,500 global participants including tech companies, venture capitalists, and accelerators under the theme "Connecting AI". Making its debut at the event, SK hynix underlined its position as a first mover and leading AI memory provider through its lineup of next-generation products.

"Connecting AI" With the Industry's Finest AI Memory Solutions
Themed "Memory, The Power of AI," SK hynix's booth featured its advanced AI server solutions, groundbreaking technologies for on-device AI PCs, and outstanding consumer SSD products. HBM3E, the fifth generation of HBM1, was among the AI server solutions on display. Offering industry-leading data processing speeds of 1.18 terabytes (TB) per second, vast capacity, and advanced heat dissipation capability, HBM3E is optimized to meet the requirements of AI servers and other applications. Another technology which has become crucial for AI servers is CXL as it can increase system bandwidth and processing capacity. SK hynix highlighted the strength of its CXL portfolio by presenting its CXL Memory Module-DDR5 (CMM-DDR5), which significantly expands system bandwidth and capacity compared to systems only equipped with DDR5. Other AI server solutions on display included the server DRAM products DDR5 RDIMM and MCR DIMM. In particular, SK hynix showcased its tall 128-gigabyte (GB) MCR DIMM for the first time at an exhibition.

On June 4th, COMPUTEX 2024 was successfully held at the Taipei Nangang Exhibition Center. Mnemonic Electronic Co., Ltd., the Taiwanese subsidiary of Longsys, showcased industry-leading high-capacity SSDs under the theme "Embracing the Era of High-Capacity SSDs." The products on display included the Mnemonic MS90 8TB SATA SSD, FORESEE ORCA 4836 series enterprise NVMe SSDs, FORESEE XP2300 PCIe Gen 4 SSDs, and rich product lines comprising embedded storage, memory modules, memory cards, and more. The company offers reliable industrial-grade, automotive-grade, and enterprise-grade storage products, providing high-capacity solutions for global users.

High-Capacity SSDs
For SSDs, Mnemonic Electronic presented products in various form factors and interfaces, including PCIe M.2, PCIe BGA, SATA M.2, and SATA 2.5-inch. The Mnemonic MS90 8 TB SATA SSD supports the SATA interface with a speed of up to 6 Gb/s (Gen 3) and is backward compatible with Gen 1 and Gen 2. It also supports various SATA low-power states (Partial/Sleep/Device Sleep) and can be used for nearline HDD replacement, surveillance, and high-speed rail systems.

SK hynix participated in the first-ever Compute Express Link Consortium Developers Conference (CXL DevCon) held in Santa Clara, California from April 30-May 1. Organized by a group of more than 240 global semiconductor companies known as the CXL Consortium, CXL DevCon 2024 welcomed a majority of the consortium's members to showcase their latest technologies and research results.

CXL is a technology that unifies the interfaces of different devices in a system such as semiconductor memory, storage, and logic chips. As it can increase system bandwidth and processing capacity, CXL is receiving attention as a key technology for the AI era in which high performance and capacity are essential. Under the slogan "Memory, The Power of AI," SK hynix showcased a range of CXL products at the conference that are set to strengthen the company's leadership in AI memory technology.

Rambus Inc. (NASDAQ: RMBS), a premier chip and silicon IP provider making data faster and safer, today announced the availability of its new family of state-of-the-art DDR5 server Power Management ICs (PMICs), including an industry-leading extreme current device for high-performance applications. With this new family of server PMICs, Rambus offers module manufacturers a complete DDR5 RDIMM memory interface chipset supporting a broad range of data center use cases.

"Advanced data center workloads like generative AI require the highest bandwidth and capacity server RDIMMs tailored to meet ever-increasing memory needs of a growing data pipeline," said Sean Fan, chief operating officer at Rambus. "With the addition of this new family of server PMICs, we expand our foundational technology and offer customers a comprehensive memory interface chipset that supports multiple DDR5 server platform generations."

Samsung Electronics, a world leader in advanced semiconductor technology, unveiled the expansion of its Compute Express Link (CXL) memory module portfolio and showcased its latest HBM3E technology, reinforcing leadership in high-performance and high-capacity solutions for AI applications.

In a keynote address to a packed crowd at Santa Clara's Computer History Museum, Jin-Hyeok Choi, Corporate Executive Vice President, Device Solutions Research America - Memory at Samsung Electronics, along with SangJoon Hwang, Corporate Executive Vice President, Head of DRAM Product and Technology at Samsung Electronics, took the stage to introduce new memory solutions and discuss how Samsung is leading HBM and CXL innovations in the AI era. Joining Samsung on stage was Paul Turner, Vice President, Product Team, VCF Division at VMware by Broadcom and Gunnar Hellekson, Vice President and General Manager at Red Hat to discuss how their software solutions combined with Samsung's hardware technology is pushing the boundaries of memory innovation.

SMART Modular Technologies, Inc. ("SMART"), a division of SGH (Nasdaq: SGH) and a global leader in memory solutions, solid-state drives, and hybrid storage products, introduces its ultra-high reliability memory solution, Zefr ZDIMM memory modules. ZDIMM modules are ideally suited for data centers, hyperscalers, high performance computing (HPC) platforms and other environments that run large memory applications that demand maximum availability of the compute platform. Memory reliability is a critical factor in data centers due to the high costs associated with downtime. ZDIMM modules are offered in both DDR4-3200 and DDR5-5600 form factors and are available in mainstream densities.

ZDIMM modules employ SMART's proprietary Zefr screening process that delivers the highest levels of uptime and reliability, typically performing 90% better than industry standard memory modules. ZDIMM modules undergo a screening process that replicates real-world conditions which ensures the robustness and resilience of ZDIMM modules in the most demanding computing scenarios.

A Crucial "CT12G56C46S5" Non-ECC Small Outline Dual In-line Memory Module (SODIMM) is available to pre-order from Amazon UK—the 12 GB capacity product was spotted by everyone's favorite PC hardware sleuth;—momomo_us. March 31 appears to be the official shipping out date—current pricing is £44.99 ($57.50). Additionally, customers have the option to reserve a related 24 GB Kit (2x 12 GB) kit (CT2K12G56C46S5), priced at £87.99 (~$112.36). According to product descriptions, Crucial's upcoming laptop 5600 MHz RAM "can downclock if system specification only supports 5200 MHz or 4800 MHz."

"Non-binary modules" DDR5 modules hit retail last year—we have witnessed a slow trickle out of 24 GB and 48 GB capacity sticks, granting unusual memory configurations on compatible AMD and Intel platforms. The CT12G56C46S5 and CT2K12G56C46S5 are supported by "Core 13th Gen and Ryzen 6000 Series laptop CPUs and above." Crucial's latest DDR5 SODIMM could be the first 12 GB capacity model to reach retail, unless a rival manufacturer sneaks out an equivalent item prior to March 31.

In a surprising turn of events, SK Hynix has hinted at the possibility of the Compression Attached Memory Module (CAMM) standard, initially designed for laptops, being introduced to desktop PCs. This revelation came from a comment made by an SK Hynix representative at the CES 2024 in Las Vegas for the Korean tech media ITSubIssub. According to the SK Hynix representative, the first implementation is underway, but there are no specific details. CAMM, an innovative memory standard developed by Dell in 2022, was certified to replace SO-DIMM as the official standard for laptop memory. However, the transition to desktop PCs could significantly disrupt the desktop memory market. The CAMM modules, unlike the vertical DRAM sticks currently in use, are horizontal and are screwed into a socket. This design change would necessitate a complete overhaul of the desktop motherboard layout.

The thin, flat design of the CAMM modules could also limit the number that can be installed on an ATX board. However, the desktop version of the standard CAMM2 was announced by JEDEC just a month ago. It is designed for DDR5 memory, but it is expected to become mainstream with the introduction of DDR6 around 2025. While CAMM allows for higher speeds and densities for mobile memory, its advantages for desktops over traditional memory sticks are yet to be fully understood. Although low-power CAMM modules could offer energy savings, this is typically more relevant for mobile devices than desktops. As we move towards DDR6 and DDR7, more information about CAMM for desktops will be needed to understand its potential benefits. JEDEC's official words on the new standard indicate that "DDR5 CAMM2s are intended for performance notebooks and mainstream desktops, while LPDDR5/5X CAMM2s target a broader range of notebooks and certain server market segments." So, we can expect to see CAMM2 in both desktops and some server applications.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD318: Compression Attached Memory Module (CAMM2) Common Standard. This groundbreaking standard defines the electrical and mechanical requirements for both Double Data Rate, Synchronous DRAM Compression-Attached Memory Modules (DDR5 SDRAM CAMM2s) and Low Power Double Data Rate, Synchronous DRAM Compression-Attached Memory Modules (LPDDR5/5X SDRAM CAMM2s) in a single, comprehensive document. JESD318 CAMM2 is available for download from the JEDEC website.

DDR5 and LPDDR5/5X CAMM2s cater to distinct use cases. DDR5 CAMM2s are intended for performance notebooks and mainstream desktops, while LPDDR5/5X CAMM2s target a broader range of notebooks and certain server market segments.

Lexar, a leading global brand of flash memory solutions, is excited to announce THOR OC DDR5 Desktop Memory. Featuring a complete redesign that pays homage to Thor's hammer, this memory also boasts a durable, solid aluminium heatsink that more than stands up to the challenges of overclocking by providing superior heat dissipation. Lexar THOR OC DDR5 Desktop Memory delivers up to 6000MT/s with timing as low as CL32 for a truly next-gen experience. It features a low-profile form factor that is perfect for compact PC builds. It also supports Intel XMP 3.0 and AMD EXPO overclocking and is compatible with most DDR5 motherboards.

Lexar THOR OC DDR5 Desktop Memory's on-die Error Correction Code (ECC) offers improved stability and reliability while its on-board Power Management IC (PMIC) enhances power efficiency. Another option for PC users is THOR OC DDR4 Desktop Memory. It offers 3200MT/s performance with timing of CL16 and is designed for PC enthusiasts and extreme gamers. It has an aluminium heat spreader with a winged design to keep systems running cool and is compatible with INTEL XMP 2.0 and AMD Ryzen.

Jung-Bae Lee, President and Head of Memory Business of Samsung Electronics, the world's largest NAND memory supplier, has noted in the blog post that Samsung plans to develop its 9th Generation V-NAND memory with over 300 layers, aiming for mass production in 2024. Samsung's V-NAND uses a double-stack structure and is expected to have more active layers than its competitors' 3D NAND memory, such as SK Hynix's forthcoming 321-layer memory. The increase in layers allows Samsung to enhance storage density and performance in its future 3D NAND devices, focusing on input/output (I/O) speed. While the specific performance details of Samsung's 9th Generation V-NAND remain undisclosed, the memory is expected to be used in next-generation PCIe SSDs with the PCIe 5.0 standard.

Jung-Bae Lee has noted: "New structural and material innovations will be critical in the upcoming era of sub-10-nanometer (nm) DRAM and 1,000-layer vertical V-NAND. As such, we are developing 3D stacked structures and new materials for DRAM while increasing layer count, decreasing height, and minimizing cell interference for V-NAND." The 9th installment of V-NAND, scheduled for 2024, is utilizing 11 nm-class DRAM. Additionally, the blog post reassures the commitment to CXL Memory Modules (CMM), which will enable the composable infrastructure of next-generation systems, especially with high-capacity SSDs powered by V-NAND.