Samsung First to Begin Mass Producing 2-Gigabit DDR3 Using 40nm Class Technology
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry's first two gigabit (Gb) DDR3 devices using 40 nanometer (nm) class process technology.
"We see market adoption to DDR3 picking up steam and are accommodating that with early entry of 2Gb DDR3 using the most efficient DRAM manufacturing technology available today," said Jim Elliott, Vice President, Memory Marketing, Samsung Semiconductor, Inc. "This will set the pace for a new standard in premium, eco-friendly DRAM solutions offering the most advanced, low power RDIMM for servers anywhere."
"We see market adoption to DDR3 picking up steam and are accommodating that with early entry of 2Gb DDR3 using the most efficient DRAM manufacturing technology available today," said Jim Elliott, Vice President, Memory Marketing, Samsung Semiconductor, Inc. "This will set the pace for a new standard in premium, eco-friendly DRAM solutions offering the most advanced, low power RDIMM for servers anywhere."