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Samsung PM9B1 1 TB

1 TB
Capacity
88SS1322
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Samsung PM9B1 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung PM9B1 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the 88SS1322 Whistler Plus from Marvell, a DRAM cache is not available. Samsung has installed 128-layer TLC NAND flash on the PM9B1, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The PM9B1 is rated for sequential read speeds of up to 3,600 MB/s and 3,000 MB/s write; random IOPS reach up to 500K for reads and 420K for writes.
The SSD's price at launch is unknown. The TBW rating for the Samsung PM9B1 1 TB is unknown, too.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Unknown
Released: 2022
Part Number: MZVL41T0HBLB-00B07
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Marvell
Name: 88SS1322 Whistler Plus
Architecture: Arm® Cortex®-R5
Core Count: Triple-Core
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 4 @ 1,200 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Part Number: K9DVGY8J5B-DCK0
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: 1 chip @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 102 mm²
(5.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,600 MB/s
Sequential Write: 3,000 MB/s
Random Read: 500,000 IOPS
Random Write: 420,000 IOPS
Endurance: Unknown
Warranty: Unknown
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism.
Endurance: Could be from 1.500 to 3.000 P.E.C. depending on NAND binning

Dec 18th, 2024 01:54 EST change timezone

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