According to the latest South Korean semiconductor industry whispers, Samsung's 2 nm GAA node process (aka SF2) development team has hit another pleasing experimental production milestone. An Asia Economy SK news article has sourced insights from inside track players—one unnamed mole posited that: "the 2 nm yield currently under development at Samsung Foundry is much better than previously known...and more positive than the (reportedly abandoned) 3 nm process." A combination of relatively new leadership and a rumored welcoming of first wave High-NA EUV equipment has likely bolstered next-gen efforts, after late 2024's alleged failure of 3 nm prototypes. Leaks from earlier in 2025 indicated SF2 test yields wavering around 20-30%; far from ideal—back then, insider reports suggested that TSMC was well on the way to achieving 60% rates with a competing 2 nm product line. Asia Economy has picked up on mutterings about Samsung's current progress—latest outputs: "have exceeded 40% in the wafer testing stage at a post-processing company."

Industry watchdogs reckon that the South Korean's foundry business is making good progress; perhaps on track to commence speculated mass production by the third quarter of this year—just in time to get finalized flagship "Exynos 2600" mobile chips in the manufacturing pipeline. The Taiwanese rumor mill indicated a major milestone "completion" of TSMC's 2 nm trial phase at some point last month—insiders mentioned excellent yield rates: in the region of 70-80%. Cross-facility mass production could start later this year, but experts propose that the market leader will be implementing price hikes. These "elevated charges" could send loyal TSMC customers in the direction of an alternate source of 2 nm wafers: Samsung. Fresh semicon biz gossip has the likes of Apple, AMD and NVIDIA in the picture.

Samsung's foundry business seems to be busying itself with the rumored refinement of a 2 nm GAA (SF2) manufacturing node process—for possible mass production by the end of 2025, but company leadership will very likely be considering longer term goals. Mid-way through last month, industry moles posited that the megacorporation's semiconductor branch was questioning the future of a further out 1.4 nm (SF1.4) production line. Officially published roadmaps have this advanced technology rolling out by 2027. Despite present day "turmoil," insiders believe that a new team has been established—tasked with the creation of a so-called "dream semiconductor process." According to a fresh Sedaily news article, this fledgling department has started development of a 1 nm foundry process.

Anonymous sources claim that Samsung executives are keeping a watchful eye on a main competitor—as stated in the latest South Korean report: "there is a realistic gap with Taiwan's TSMC in technologies that are close to mass production, such as the 2 nm process, the company plans to speed up the development of the 1 nm process, a future technology, to create an opportunity for a turnaround." A portion of the alleged "1 nm development chip team" reportedly consists of veteran researchers from prior-gen projects. Semiconductor industry watchdogs theorize that a canceled SF1.4 line could be replaced by an even more advanced process. Sedaily outlined necessary hardware upgrades: "the 1.0 nanometer process requires a new technology concept that breaks the mold of existing designs as well as the introduction of next-generation equipment such as high-NA EUV exposure equipment. The company is targeting mass production after 2029." Samsung's current Advanced Technology Roadmap does not extend beyond 2027—inside sources claim that the decision to roll with 1.0 nm was made at some point last month.

Over the past weekend Jukanlosreve declared via social media that Samsung's: "Exynos 2600 (mobile SoC) is definitely back, and it will be used in the Galaxy S26 series. But the chip volume is so limited that it'll likely be similar to the Exynos 990 situation. I'm not sure if SF2 is actually any good." Mid-way through March, the keen observer of semiconductor industry conditions posited that Samsung's Foundry business could abandon a 1.4 nm (SF1.4) process node. SF2 (aka 2 nm GAA) seems to be in a healthier place, according to insiders—thanks to rumored assistance from an external AI-specialist partner. The development of next-generation flagship Exynos smartphone processors are allegedly closely tied with Samsung Foundry's 2 nm GAA manufacturing process.

As alluded to by Jukanlosreve's recent prediction, the statuses of leaked 2 nm-based "Exynos 2600" and "Exynos 2500" chips were often questioned by industry watchdogs in the past. The latter is purportedly destined for rollout in forthcoming affordable "Galaxy Z Flip FE" models, albeit in mature 4 nm form. Vhsss_God—another source of inside track info—has weighed in on the topic of Samsung's next-gen chipset roadmap. Compared to Jukanlosreve's musings, their similarly-timed weekend projection seemed to be quite fanciful: "exclusive leak...Samsung doesn't want to use Exynos or Qualcomm Snapdragon chips anymore. S26 line is targeted to launch with the new Samsung developed chip (2 nm)—formerly referred to as Exynos 2600. (The company) will try its hardest to ditch Snapdragon on the entire Galaxy line next year." Perhaps there is too much of a negative stigma attached to Samsung's long-running chipset nomenclature, but the majority of foundry moles continue to label incoming designs as Exynos processors.

Rapidus Corporation today announced that its plans and budget for fiscal year 2025 have been approved by Japan's New Energy and Industrial Technology Development Organization (NEDO). The approval covers two commissioned projects under NEDO's "Post-5G Information and Communication Systems Infrastructure Enhancement R&D Project / Development of Advanced Semiconductor Manufacturing Technology (Commissioned)." These projects are the "Research and Development of 2 nm-Generation Semiconductor Integration Technology and short TAT (turnaround time) Manufacturing Technology Based on Japan-U.S. Collaboration" and "Development of Chiplet, Package Design and Manufacturing Technology for 2 nm-Generation Semiconductors."

The first of these projects, focused on front-end processes, was launched in November 2022 as part of Japan's next-generation semiconductor R&D effort. Under this program, Rapidus has continued construction of the Innovative Integration for Manufacturing (IIM) facility in Chitose, Hokkaido, which will serve as its production base. It also sent engineers to IBM in the U.S. to jointly develop 2 nm logic semiconductor mass production technologies and continued to achieve target performance as planned. Furthermore, Rapidus has installed EUV lithography and other production equipment at the IIM facility, and started cleanroom operation. As a result of these efforts, the company achieved its performance targets for FY2024.

Rapidus Corporation, a manufacturer of advanced logic semiconductors, today announced that it signed a Memorandum of Cooperation with Quest Global Services PTE. Ltd. As part of the agreement, Rapidus will become Quest Global's new semiconductor foundry partner, enabling it to provide a wide range of solutions to its customers. Quest Global customers will be able to leverage Rapidus' 2 nm gate-all-around (GAA) manufacturing process to develop engineering design and manufacturing solutions that will support growing industry demand for low-power artificial intelligence (AI) semiconductors. Together, the two companies will deliver transformational silicon solutions as a virtual integrated device manufacturer (IDM) model for fabless companies.

The AI semiconductor industry is in its early stages, with applications just beginning to emerge and new entrants quickly coming to market. Customers will shift from general-purpose AI semiconductors to dedicated designs that reduce power consumption and maximize performance. To support these industry requirements, customers will engage design firms focused on providing custom solutions, such as Quest Global, while also collaborating with semiconductor foundries, like Rapidus, that can manufacture dedicated semiconductors with a short turnaround time.

According to The Korea Economic Daily, an unlikely alliance—involving Samsung Electronics and Palantir Technologies—was formed at the end of last year. Late last week, insiders posited that the South Korean megacorporation's Foundry business was going through troubled times. It is not clear whether the assistance provided by Palantir's AI-infused suite has produced pleasing results chez Samsung's flagship production hubs, but insiders reckon that utilization of the software started just before Christmas. Local media outlets view this unusual pairing as a "gamble"—reportedly, the new-ish initiative has targeted an improved "semiconductor yield (ratio of good products in total production), quality, and productivity."

The Samsung Foundry appears to be going "all-in" with its 2 nm GAA node process; industry moles picked up on signals transmitted by an alleged special "task force (TF)." This elite team is reportedly entrusted with a challenging two-pronged goal; get 2 nm GAA over the finish line by late 2025, alongside the (connected) finalization of a much-rumored "Exynos 2600" mobile chipset. The Korea Economic Daily news article mentions the expansion of a "Samsung DS Division AI Center" back in December (2025), but falls short of labelling this department as the aforementioned "special task force." Despite a previous reluctance to share sensitive data with external companies, the latest report suggests a significant change in strategy. Further details were disclosed: "(Samsung's) collaboration with Palantir is handled by the DS Division AI Center...The AI Center is an organization that merged the DS Division Innovation Center and SAIT (formerly Samsung Advanced Institute of Technology) AI Center, and is developing DS Division-specific technologies using AI, advancing development software, building AI platforms, and controlling and advancing facilities and infrastructure." Around late February, industry inside trackers predicted continued "smooth" progress with the 2 nm GAA node. Samsung Foundry's fully upgraded "S2" mass production line is expected to come online by Q4 2025.

Late last month, industry insiders posited that pleasing progress was being made with Samsung's cutting-edge 2 nm Gate-All-Around (GAA) node process. The rumored abandonment of an older 3 nm GAA-based project—in late 2024—has likely sent the South Korean foundry team into overdrive. A speculated Exynos 2500 flagship mobile processor was previously linked to said 3 nm node, but industry watchdogs believe that company engineers are experimenting with a 2 nm GAA manufacturing process. According to the latest insider report—from FN News SK—Samsung Foundry (SF) has assembled a special "task force (TF)." Allegedly, this elite team will be dedicated to getting a newer "Exynos 2600 chip" over the finish line—suggesting an abandonment of the older "2500" design, or a simple renaming.

Samsung's recent launch of Galaxy S25 series smartphones was reportedly viewed as a disappointing compromise—with all models being powered by Qualcomm's "first-of-its-kind customized Snapdragon 8 Elite Mobile Platform," instead of in-house devised chipsets. According to industry moles, one of the SF task force's main goals is a boosting of 2 nm GAA production yields up to "economically viable" levels (roughly 60-70%)—apparently last month's best result was ~30%. Mass production of prototype chipsets is tipped to start by May. Samsung's reported target of "stabilizing their Exynos 2600" SoC design will ensure that "Galaxy S26 series" devices will not become reliant on Qualcomm internals. Additionally, FN News proposes a bigger picture scenario: "the stabilization of 2 nm (SF2/GAA) products, is expected to speed up the acquisition of customers for Samsung Electronics' foundry division, which is thirsty for leading-edge process customers." A forthcoming rival next-gen mobile chip—Snapdragon 8 Elite Gen 2—is supposedly in the pipeline. The smartphone industry inside track reckons that Qualcomm has signed up with TSMC; with a 2 nm manufacturing process in mind.

Samsung's foundry operation has experienced many setbacks over the past six months, according to a steady feed of insider reports. Last November, industry moles leaked details of an apparent abandonment of the company's 3 nm Gate-All-Around (GAA) process. Significant yield problems prompted an alleged shift into 2 nm territories, with a next-gen flagship Exynos mobile processor linked to this cutting-edge node. According to a mid-week Chosun Daily article, Samsung and its main rival—TSMC—are in a race to establish decent yields of 2 nm wafers, ahead of predicted "late 2025" mass production kick-offs. The publication's inside track points to the Taiwanese foundry making the most progress (with an estimated 60%), but watchdogs warn that it is too early to bet against the South Korean competitor.

Despite murmurs of current 20 - 30% yields, the Samsung's Hwaseong facility is touted to make "smooth" progress over the coming months. Chosun's sources believe that Samsung engineers struggled to get 3 nm GAA "up to snuff," spending around three years on development endeavors (in vain). In comparison, the making of 2 nm GAA is reported to be less bumpy. A fully upgraded "S3" foundry line is expected to come online by the fourth quarter of this year. An unnamed insider commented on rumors of better than anticipated forward motion chez Samsung Electronics: "there are positive aspects to this as it has shown technological improvements, such as the recent increase in the yield of its 4 nm process by up to 80%." Recent-ish reports suggest that foundry teams have dealt with budget cuts, as well as mounting pressure from company leadership to hit deadlines.

Intel has unveiled some interesting advances in semiconductor manufacturing at the International Solid-State Circuits Conference (ISSCC), showcasing the capabilities of its highly anticipated Intel 18A process technology. The presentation highlighted significant improvements in SRAM bit cell density. The PowerVia system, coupled with RibbonFET (GAA) transistors, is at the heart of Intel's node. The company demonstrated solid progress with their high-performance SRAM cells, achieving a reduction from 0.03 µm² in Intel 3 to 0.023 µm² in Intel 18A. High-density cells showed similar improvement, shrinking to 0.021 µm². These advancements represent scaling factors of 0.77 and 0.88 respectively, which are significant achievements in SRAM technology, once thought to be done with scaling benefits.

Implementing PowerVia technology is an Intel-first approach to addressing voltage drops and interference in processor logic areas. Using an "around the array" scheme, Intel strategically applies PowerVias to I/O, control, and decoder elements while optimizing bit cell design without a frontal power supply. The macro bit density of 38.1 MBit/mm² achieved by Intel 18A puts the company in a strong competitive position. While TSMC reported matching figures with their N2 process, Intel's comprehensive approach with 18A, combining PowerVia and GAA transistors, could challenge Smausng and TSMC, with long-term aspirations to compete for premium clients currently served by TSMC, including giants like NVIDIA, Apple, and AMD.

Samsung Electronics today reported financial results for the fourth quarter and the fiscal year 2024. The Company posted KRW 75.8 trillion in consolidated revenue and KRW 6.5 trillion in operating profit in the quarter ended December 31, 2024. For the full year, it reported KRW 300.9 trillion in annual revenue and KRW 32.7 trillion in operating profit.

Although fourth quarter revenue and operating profit decreased on a quarter-on-quarter (QoQ) basis, annual revenue reached the second-highest on record, surpassed only in 2022. Meanwhile, operating profit was down KRW 2.7 trillion QoQ, due to soft market conditions especially for IT products, and an increase in expenditures including R&D. In the first quarter of 2025, while overall earnings improvement may be limited due to weakness in the semiconductors business, the Company aims to pursue growth through increased sales of smartphones with differentiated AI experiences, as well as premium products in the Device eXperience (DX) Division.

Intel Foundry has announced the onboarding of new defense industrial base (DIB) customers, Trusted Semiconductor Solutions and Reliable MicroSystems, as part of the third phase of the Rapid Assured Microelectronics Prototypes - Commercial (RAMP-C) efforts under the Trusted & Assured Microelectronics (T&AM) Program in the Office of the Under Secretary of Defense for Research and Engineering (OUSD (R&E)). The RAMP-C project, awarded through the Strategic & Spectrum Missions Advanced Resilient Trusted Systems (S²MARTS) Other Transaction Authority (OTA), allows DIB customers to take advantage of Intel Foundry's leading-edge Intel 18A process technology and advanced packaging for prototypes and high-volume manufacturing of commercial and DIB products for the U.S. Department of Defense (DoD).

"We are very excited to welcome Trusted Semiconductor Solutions and Reliable MicroSystems to the RAMP-C project we are engaged in with the DoD. The collaboration will drive cutting-edge, secure semiconductor solutions essential for our nation's security, economic growth and technological leadership. We are proud of the pivotal role Intel Foundry plays in supporting U.S. national defense and look forward to working closely with our newest DIB customers to enable their innovations with our leading-edge Intel 18A technology," said Kapil Wadhera, vice president of Intel Foundry and general manager of Aerospace, Defense and Government Business Group.

Samsung's native foundry operations have wrestled with the 3 nm Gate-All-Around (GAA) process—these problems have persisted since the first reports of "missed production targets" emerged late last year—online speculators floated a very disappointing yield figure: only 20%. Last December, industry moles proposed that the South Korean technology giant had devised plans to form an Exynos-centric "multi-channel partnership" with rival chipmakers. Speculation pointed to TSMC being the only valid ally. Semiconductor industry tipster—Jukanlosreve—believes that negotiations have taken place, and the answer was a firm "no." TSMC's most advanced node process order books are likely filled up with more important customers—industry watchdogs reckon that Apple usually gets first dibs.

Taiwan's top semiconductor manufacturer leads the market with its cutting-edge lithography techniques. Insiders believe that Samsung was impressed by TSMC's 2 nm trial production runs achieving (rumored) 60% yields. The higher-end Exynos chipsets are normally produced with the best node process available, but missed manufacturing goals have caused Samsung to drop in-house tech. In the recent past, Qualcomm's most powerful Snapdragon mobile chipsets have been deployed on flagship Galaxy S smartphones. Jukanlosreve believes that TSMC rejected Samsung's proposed Exynos deal due to a fear of revealing too many "trade secrets." Potentially, the South Koreans could have learned a thing or two about improving yields—courtesy of TSMC's expert knowledge.

Rapidus Corporation, a manufacturer of advanced logic semiconductors, today announced the delivery and installation of ASML's EUV lithography equipment at its Innovative Integration for Manufacturing (IIM-1) foundry, an advanced semiconductor development and manufacturing fab currently under construction in Chitose, Hokkaido. To commemorate the installation, a ceremony was held at Portom Hall in the New Chitose Airport.

This is a significant milestone for Japan's semiconductor industry, marking the first time that an EUV lithography tool will be used for mass production in the country. In addition to the EUV lithography machinery, Rapidus will install additional complementary advanced semiconductor manufacturing equipment, as well as full automated material handling systems in its IIM-1 foundry to optimize 2 nm generation gate-all-around (GAA) semiconductor manufacturing.

Being the leading-edge semiconductor manufacturing company, TSMC actively works on increasing the efficiency of its upcoming nodes, even when they are finalized and ready for high-volume manufacturing. According to a TSMC employee identified as Dr. Kim on X, recent test runs of the 2 nm N2 nodes show a 6% improvement in production yields compared to baseline expectations. This advancement could translate into substantial cost savings for the company's customers when mass production begins in late 2025. However, specific details about whether the gains were achieved in SRAM or logic test chips remain undisclosed. The timing is particularly noteworthy as TSMC prepares to launch its shuttle test wafer services for 2 nm technology in January. The N2 process represents a giant leap for TSMC, marking its first gate-all-around (GAA) nanosheet transistors implementation, the first step to derive from the classical FinFET design.

According to TSMC's projections, chips manufactured using the N2 process will consume 25-30% less power while maintaining the same transistor count and frequency as its N3E node. Additionally, the technology is expected to deliver 10-15% performance improvements and achieve a 15% increase in transistor density. A key innovation in the N2 process is the enhanced design of its GAA nanosheet transistors, which offers improved electrostatic control and reduced gate leakage compared to 3 nm FinFET transistors, given that the gate can be controlled from all sides. This advancement enables smaller high-density transistors to maintain reliable performance through better threshold voltage tuning capabilities. With approximately seven to eight months until full-scale volume production begins, the company has a substantial window to optimize the manufacturing process further and potentially achieve additional yield improvements, although that is less likely.

Samsung's latest semiconductor manufacturing technology is falling short of expectations, as the company struggles to achieve acceptable production rates for its cutting-edge 3 nm chips. The latest rumors indicate that both versions of Samsung's 3 nm Gate-All-Around (GAA) process produce fewer viable chips than anticipated. The initial targets set by the South Korean tech giant were aimed at a 70% yield rate in volume production. However, the first "SF3E-3GAE" iteration of the technology has only managed to achieve between 50-60% viable yield output. More troubling is the performance of the second-generation process, which is reportedly yielding only 20% of usable chips—a figure that falls dramatically short of production goals. The timing is particularly challenging for Samsung as major clients begin to reevaluate their manufacturing partnerships.

Qualcomm has opted to produce its latest Snapdragon 8 Elite processors exclusively through rival TSMC's 3 nm facilities. Even more telling is the exodus of South Korean companies, traditionally loyal to Samsung, who are now turning to TSMC's more reliable manufacturing processes. While Samsung can claim the achievement of bringing 3 nm GAA technology to market before TSMC's competing N3B process, this technical victory rings hollow without the ability to mass-produce chips efficiently. The gap between Samsung's aspirations and manufacturing reality continues to widen. However, Samsung is shifting its focus toward its next technological milestone. Development efforts are reportedly intensifying around a 2 nm manufacturing process, with plans to debut this technology in a new Exynos processor (codenamed 'Ulysses') for the 2027 Galaxy S27 smartphone series.

Last time we reported on Samsung Foundry, the company publicly apologized for its setbacks in the memory and foundry divisions, especially as its 3 nm GAA FET node has failed to attract new customers. On the other hand, Intel has also been struggling with its Foundry unit bleeding billions of Dollars in a bid to secure its spot as one of the best foundries for companies to manufacture their chips. There is no better pair than two struggling foundries looking for customers and new ways to conduct research than Intel and Samsung. According to an exclusive by South Korean media outlet "MK," it has reportedly been confirmed that Intel approached Samsung to form a "Foundry Alliance" to boost their foundry business units.

According to the source, Intel CEO Pat Gelsinger is reportedly eager to meet with Samsung Electronics Chairman Lee Jae-yong face-to-face to discuss "comprehensive collaboration in the foundry sector." What exactly will happen between the two is still unclear. Back in 2014, GlobalFoundries and Samsung formed a partnership for 14 nm FinFET offerings, and that was a wide success. Jointly developing a node and offering it in their foundry units could be the target goal for Intel and Samsung. At some level, research and development, as well as sharing valuable manufacturing information on yield improvements, should be beneficial for both to put together the final pieces of the semiconductor puzzle.

Yesterday, Arm has announced significant progress in its Total Design initiative. The program, launched a year ago, aims to accelerate the development of custom silicon for data centers by fostering collaboration among industry partners. The ecosystem has now grown to include nearly 30 participating companies, with recent additions such as Alcor Micro, Egis, PUF Security, and SEMIFIVE. A notable development is a partnership between Arm, Samsung Foundry, ADTechnology, and Rebellions to create an AI CPU chiplet platform. This collaboration aims to deliver a solution for cloud, HPC, and AI/ML workloads, combining Rebellions' AI accelerator with ADTechnology's compute chiplet, implemented using Samsung Foundry's 2 nm Gate-All-Around (GAA) FET technology. The platform is expected to offer significant efficiency gains for generative AI workloads, with estimates suggesting a 2-3x improvement over the standard CPU design for LLMs like Llama3.1 with 405 billion parameters.

Arm's approach emphasizes the importance of CPU compute in supporting the complete AI stack, including data pre-processing, orchestration, and advanced techniques like Retrieval-augmented Generation (RAG). The company's Compute Subsystems (CSS) are designed to address these requirements, providing a foundation for partners to build diverse chiplet solutions. Several companies, including Alcor Micro and Alphawave, have already announced plans to develop CSS-powered chiplets for various AI and high-performance computing applications. The initiative also focuses on software readiness, ensuring that major frameworks and operating systems are compatible with Arm-based systems. Recent efforts include the introduction of Arm Kleidi technology, which optimizes CPU-based inference for open-source projects like PyTorch and Llama.cpp. Notably, as Google claims, most AI workloads are being inferenced on CPUs, so creating the most efficient and most performant CPUs for AI makes a lot of sense.

Samsung Electronics is grappling with significant challenges in its semiconductor division, particularly in its memory and foundry businesses. The company's top management, led by DS Division Vice Chairman Jeon Young-hyun, recently issued a public apology for the division's underwhelming performance. The tech giant's struggles are best seen in its advanced 3 nm Gate-All-Around (GAA) FET node, which reportedly yields only 10-20% of working silicon. This low yield rate has made potential customers hesitant to partner with Samsung, dealing a blow to its foundry business. Samsung Securities projects a 500 billion won (approximately $385 million) loss this year for Samsung Foundry and the LSI division combined. In the global foundry market, Samsung's position has weakened considerably. The company currently holds just 11.5% of the market share in Q2, while industry leader TSMC dominates with a commanding 62.3%. This disparity has led to speculation about the possible spinoff of Samsung Foundry, as the company reevaluates its strategy in the advanced semiconductor manufacturing sector.

Memory unit, one of Samsung's biggest assets, is slowly being one-upped by SK Hynix, which could overtake Samsung as the number one memory maker thanks to strong HBM demand. The management's apology acknowledges the concerns raised about the company's technological competitiveness and future prospects. Vice Chairman Jeon emphasized the need to restore fundamental competitiveness in technology and quality, which he described as the company's "lifeblood." Despite these challenges, Samsung's leadership remains optimistic about turning the crisis into an opportunity. They have pledged to focus on long-term solutions, invest in pioneering technologies, and foster a culture of innovation and open communication within the organization. As one of only three companies left in the advanced semiconductor manufacturing field, alongside TSMC and Intel, Samsung's ability to overcome these hurdles will be crucial not only for the company but for the entire industry.

The grass isn't always greener on the other side, especially as we're running out of sides in the advanced semiconductor manufacturing sector. A recent report by Business Korea highlights Samsung Securities' July publication titled "Geopolitical Paradigm Shift and Industry," which paints a less-than-optimistic picture of Samsung's current state of affairs. The report even evaluates a possible spinoff of Samsung Foundry. The Korean tech giant has faced various business setbacks related to its state-of-the-art 3 nm Gate-All-Around (GAA) FET node. Reports indicate that this node only manages to yield 10-20% of working silicon, making potential customers reluctant to secure partnerships with Samsung. Samsung Securities projects that Samsung Foundry, along with the LSI division, will suffer a 500 billion won (about $385 million) loss this year.

Poor yields and difficulty securing customers have left Samsung facing tough choices, including the possible sale of its massive Foundry unit, which manufactures logic for external customers. It's noteworthy that Samsung is one of only three companies left in the advanced semiconductor manufacturing field, alongside TSMC and Intel. Many companies struggled to deliver results when transitioning to sub-7 nm nodes. Global Foundries dropped out of the race to focus on mature nodes, while Intel faced delays. TSMC has been the only company so far to consistently set and execute its goals, positioning itself as the industry leader. With low yields on the 3 nm GAA FET node, Samsung currently holds 11.5% of the global foundry market share in Q2, while TSMC dominates with 62.3%.

Samsung's foundry plans have again hit a major setback. The company notified staff at its Taylor, Texas facility that it was temporarily removing workers from the site because it is still experiencing challenges with 2 nm semiconductor yields, delaying mass production timelines from late 2024 to 2026. The Taylor site had been anticipated as the flagship facility for Samsung's sub-4 nm production, allowing access to potential customers near the facility. While Samsung has moved rapidly in terms of process development, its yields for advanced nodes have outstripped them, the company's yields for sub-3 nm processes hover around 50%, with Gate-All-Around (GAA) technology witnessing yields of only 10-20%, significantly lower than neighboring competitor TSMC's 60-70% for corresponding nodes.

The yield gaps that the company is experiencing have exacerbated the gap in market share, with TSMC capturing 62.3% of the global foundry market share in Q2 versus Samsung's 11.5%. The company is struggling to gain share despite efforts by Chairman Lee Jae-yong - including visits to component suppliers ASML, and Zeiss - and these yields put at risk as much as 9 trillion won in U.S. CHIP Act potential subsidies that are dependent upon operational milestones.

Intel Corporation today reported second-quarter 2024 financial results. "Our Q2 financial performance was disappointing, even as we hit key product and process technology milestones. Second-half trends are more challenging than we previously expected, and we are leveraging our new operating model to take decisive actions that will improve operating and capital efficiencies while accelerating our IDM 2.0 transformation," said Pat Gelsinger, Intel CEO. "These actions, combined with the launch of Intel 18A next year to regain process technology leadership, will strengthen our position in the market, improve our profitability and create shareholder value."

"Second-quarter results were impacted by gross margin headwinds from the accelerated ramp of our AI PC product, higher than typical charges related to non-core businesses and the impact from unused capacity," said David Zinsner, Intel CFO. "By implementing our spending reductions, we are taking proactive steps to improve our profits and strengthen our balance sheet. We expect these actions to meaningfully improve liquidity and reduce our debt balance while enabling us to make the right investments to drive long-term value for shareholders."

Samsung Electronics today reported financial results for the second quarter ended June 30, 2024. The Company posted KRW 74.07 trillion in consolidated revenue and operating profit of KRW 10.44 trillion as favorable memory market conditions drove higher average sales price (ASP), while robust sales of OLED panels also contributed to the results.

Memory Market Continues To Recover; Solid Second Half Outlook Centered on Server Demand
The DS Division posted KRW 28.56 trillion in consolidated revenue and KRW 6.45 trillion in operating profit for the second quarter. Driven by strong demand for HBM as well as conventional DRAM and server SSDs, the memory market as a whole continued its recovery. This increased demand is a result of the continued AI investments by cloud service providers and growing demand for AI from businesses for their on-premise servers.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that it will provide turnkey semiconductor solutions using the 2-nanometer (nm) foundry process and the advanced 2.5D packaging technology Interposer-Cube S (I-Cube S) to Preferred Networks, a leading Japanese AI company.

By leveraging Samsung's leading-edge foundry and advanced packaging products, Preferred Networks aims to develop powerful AI accelerators that meet the ever-growing demand for computing power driven by generative AI.

Samsung Electronics, a world leader in advanced semiconductor technology, today unveiled its latest foundry innovations and outlined its vision for the AI era during Samsung Foundry Forum (SFF) U.S., an annual event held at the company's Device Solutions America headquarters in San Jose, California. Under the theme "Empowering the AI Revolution," Samsung announced its reinforced process technology roadmap, including two new cutting-edge nodes—SF2Z and SF4U—as well as its integrated Samsung AI Solutions platform harnessing the unique strengths of its Foundry, Memory and Advanced Package (AVP) businesses.

"At a time when numerous technologies are evolving around AI, the key to its implementation lies in high-performance, low-power semiconductors," said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics. "Alongside our proven GAA process optimized for AI chips, we plan to introduce integrated, co-packaged optics (CPO) technology for high-speed, low-power data processing, providing our customers with the one-stop AI solutions they need to thrive in this transformative era."

According to sources familiar with the matter and reported by Bloomberg, the Biden administration is considering imposing further export controls to limit China's ability to acquire advanced semiconductor technologies crucial for developing AI systems. Gate-all-around (GAA) transistor technology and high-bandwidth memory (HBM) chips are at the center of the proposed restrictions. These cutting-edge components play a pivotal role in creating powerful AI accelerators. GAA transistors, a key feature in next-generation chips, promise substantial improvements in power efficiency and processing speeds. Meanwhile, HBM chips enable high-speed data transfer between a processor and memory. While existing sanctions prevent American firms from supplying Chinese companies with equipment for manufacturing leading-edge chips, concerns persist that China could still attain advanced capabilities through other means.

For instance, China's leading chipmaker, SMIC, could potentially integrate GAA transistors into its existing 7 nm process node, markedly enhancing performance. Access to HBM would further augment China's ability to develop AI accelerators on par with cutting-edge offerings from US firms. The reflections within the Biden administration show a strategic effort to preserve America's technological edge by denying China access to key semiconductor innovations. However, implementing such stringent export controls is a delicate balancing act, as it risks heightening tensions and prompting Chinese retaliation. No final decision has been made, and officials continue weighing the proposed restrictions' pros and cons. Nonetheless, the discussions highlight the pivotal role that semiconductor technology plays in the great power rivalry between the US and China, especially in the AI era.