Samsung has invested heavily in semiconductor manufacturing technology to provide clients with a viable alternative to TSMC and its portfolio of nodes spanning anything from mobile to high-performance computing (HPC) applications. Today, we have information that Samsung will present its SF4X node to the public in this year's VLSI Symposium. Previously known as a 4HPC node, it is designed as a 4 nm-class node with a specialized use case for HPC processors, in contrast to the standard SF4 (4LPP) node that uses 4 nm transistors designed for low-power standards applicable to mobile/laptop space. According to the VLSI Symposium schedule, Samsung is set to present more info about the paper titled "Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells."

As the brief introduction notes, "In this paper, the most upgraded 4nm (SF4X) ensuring HPC application was successfully demonstrated. Key features are (1) Significant performance +10% boosting with Power -23% reduction via advanced SD stress engineering, Transistor level DTCO (T-DTCO) and [middle-of-line] MOL scheme, (2) New HPC options: Ultra-Low-Vt device (ULVT), high speed SRAM and high Vdd operation guarantee with a newly developed MOL scheme. SF4X enhancement has been proved by a product to bring CPU Vmin reduction -60mV / IDDQ -10% variation reduction together with improved SRAM process margin. Moreover, to secure high Vdd operation, Contact-Gate breakdown voltage is improved by >1V without Performance degradation. This SF4X technology provides a tremendous performance benefits for various applications in a wide operation range." While we have no information on the reference for these claims, we suspect it is likely the regular SF4 node. More performance figures and an in-depth look will be available on Thursday, June 15, at Technology Session 16 at the symposium.

Historically, AMD was working with two semiconductor manufacturing companies: TSMC and GlobalFoundries. According to the latest report coming from Gokul Hariharan, an analyst at J.P. Morgan, AMD could soon tap another semiconductor manufacturer to produce the company's growing list of processors. As the report indicates, AMD could start working with the South Korean giant Samsung and utilize the firm's 4LPP process that represents a second generation of the low-power 4 nm silicon node. This specific node is allegedly the choice for AMD APUs designed to fit inside Google's Chromebook devices, which require low-power designs to achieve excellent battery life.

AMD could realize this move in late 2022, as Samsung's 4LPP node goes into mass production at that point. It means that we could see the first Samsung-made AMD APUs in late 2022 or the beginning of 2023. And apparently, the two company's collaboration could be much more significant as AMD is evaluating Samsung's 3 nm nodes for other products spanning more segments in 2023/2024. There are no official, definitive agreements between the two, so we have to wait for more information and official responses from these parties. Anyways, if AMD decides to produce a part of its lineup at Samsung, the remaining TSMC capacity would ensure that the supply of every incoming chip remains sufficient.

During its Q3 earnings call, Samsung Electronics has provided everyone with an update on its foundry and node production development. In the past year or so, Samsung's foundry has been a producer of a 7 nm LPP (Low Power Performance) node as its smallest node. That is now changed as Samsung has started the production of the 5 nm LPE (Low Power Early) semiconductor manufacturing node. In the past, we have reported that the company struggled with yields of its 5 nm process, however, that seems to be ironed out and now the node is in full production. To contribute to the statement that the new node is doing well, we also recently reported that Samsung will be the sole manufacturer of Qualcomm Snapdragon 875 5G SoC.

The new 5 nm semiconductor node is a marginal improvement over the past 7 nm node. It features a 10% performance improvement that is taking the same power and chip complexity or a 20% power reduction of the same processor clocks and design. When it comes to density, the company advertises the node with x1.33 times increase in transistor density compared to the previous node. The 5LPE node is manufactured using the Extreme Ultra-Violet (EUV) methodology and its FinFET transistors feature new characteristics like Smart Difusion Break isolation, flexible contact placement, and single-fin devices for low power applications. The node is design-rule compatible with the previous 7 nm LPP node, so the existing IP can be used and manufactured on this new process. That means that this is not a brand new process but rather an enhancement. First products are set to arrive with the next generation of smartphone SoCs, like the aforementioned Qualcomm Snapdragon 875.

TSMC had been working super hard in the past few years and has been investing in lots of new technologies to drive the innovation forward. At TSMC's Technology Symposium held this week was, the company has presented various things like the update on its 12 nm node, as well as future plans for node development. One of the most interesting announcements made this week was TSMC's state and ownership of Extreme Ultra-Violet (EUV) machines. ASML, the maker of these EUV machines used to etch the pattern on silicon, has been the supplier of the Taiwanese company. TSMC has announced that they own an amazing 50% of all EUV machine installations.

What is more important is the capacity that the company achieves with it. It is reported that TSMC achieves 60% of all EUV wafer capacity in the world, which is a massive achievement of what TSMC can do with the equipment. The company right now has only two nodes on EUV in high-volume manufacturing, the 7 nm+ node and 5 nm node (which is going HVM in Q4), however, that is more than any of its competitors. All of the future nodes are to be manufactured using the EUV machines and the smaller nodes require it. As far as the competitors go, only Samsung is currently making EUV silicon on the 7 nm LPP node. Intel is yet to release some products on a 7 nm node of its own, which is the first EUV node from the company.

Samsung Electronics announced today that their 8 nm FinFET process technology, 8LPP (Low Power Plus), has been qualified and is ready for production. Samsung's newest process node provides up to 10-percent lower power consumption with up to 10-percent area reduction from 10LPP through a narrower metal pitch. 8LPP is expected to provide benefits for applications including mobile, cryptocurrency and network/server. Samsung expects this 8 nm node to be the last feasible one with current fabrication technology - shown by the fact it's actually employing much of the same design and production processes and philosophy as the 10 nm node. Samsung is counting on EUV (Extreme Ultra Violet) technology to enable 7 nm and smaller process nodes.

"With the qualification completed three months ahead of schedule, we have commenced 8LPP production," said Ryan Lee, Vice President of Foundry Marketing at Samsung Electronics. "Samsung Foundry continues to expand its process portfolio in order to provide distinct competitive advantages and excellent manufacturability based on what our customers and the market require." Details of the recent update to Samsung's foundry roadmap, including 8LPP availability and 7nm EUV development, will be presented at the Samsung Foundry Forum Europe on October 18, 2017, in Munich, Germany.