Samsung has invested heavily in semiconductor manufacturing technology to provide clients with a viable alternative to TSMC and its portfolio of nodes spanning anything from mobile to high-performance computing (HPC) applications. Today, we have information that Samsung will present its SF4X node to the public in this year's VLSI Symposium. Previously known as a 4HPC node, it is designed as a 4 nm-class node with a specialized use case for HPC processors, in contrast to the standard SF4 (4LPP) node that uses 4 nm transistors designed for low-power standards applicable to mobile/laptop space. According to the VLSI Symposium schedule, Samsung is set to present more info about the paper titled "Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells."

As the brief introduction notes, "In this paper, the most upgraded 4nm (SF4X) ensuring HPC application was successfully demonstrated. Key features are (1) Significant performance +10% boosting with Power -23% reduction via advanced SD stress engineering, Transistor level DTCO (T-DTCO) and [middle-of-line] MOL scheme, (2) New HPC options: Ultra-Low-Vt device (ULVT), high speed SRAM and high Vdd operation guarantee with a newly developed MOL scheme. SF4X enhancement has been proved by a product to bring CPU Vmin reduction -60mV / IDDQ -10% variation reduction together with improved SRAM process margin. Moreover, to secure high Vdd operation, Contact-Gate breakdown voltage is improved by >1V without Performance degradation. This SF4X technology provides a tremendous performance benefits for various applications in a wide operation range." While we have no information on the reference for these claims, we suspect it is likely the regular SF4 node. More performance figures and an in-depth look will be available on Thursday, June 15, at Technology Session 16 at the symposium.