GeIL (Golden Emperor International Ltd.), one of the world's leading PC components and peripheral manufacturers, has announced a partnership with ASRock to expand their gaming product line and launch the EVO SPEAR Phantom Gaming Edition Memory. This new memory module delivers the hardcore gaming experience gamers and enthusiasts demand for their SFF (small form factor) systems.

The all-new EVO SPEAR Phantom Gaming Edition Memory is fully compatible with ASRock Phantom Gaming motherboards, including the latest Z390 Phantom Gaming X, Z390 Phantom Gaming 7 and X399 Phantom Gaming 6. It is available as single modules and kits up to 64GB and runs as low as 1.2V and at max 1.35V, thereby resulting in less power consumption and higher reliability. Featuring a stylish and stealthy standard-height heat spreader, EVO SPEAR Phantom Gaming Edition Memory can be used in most case designs especially the SFF (small form factor) systems and full-sized gaming PCs. It's ideal for gamers, enthusiasts, and case modders looking to maximize gaming performance with minimum investment.

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today announces that the XPG Overclocking Lab (XOCL) has overclocked the SPECTRIX D60G RGB DDR4 memory module to a frequency of 5634 MT/s, a new record. The previous record was 5608 MT/s. The milestone was achieved with an Intel Core i9 chipset and MSI MPG Z390I GAMING EDGE AC motherboard in an LN2-cooled configuration. The results have been certified and published on HWBOT.

The D60G is built with high-quality chips and a metal heat sink for excellent signal integrity, reliability, and stability, which effectively extends the lifespan of the memory module. What's more, Intel Extreme Memory (XMP) 2.0 profiles make overclocking a snap and enhance system stability. Instead of adjusting individual parameters in BIOS, users can do it right through their PC's operating system.

AMD's 3rd generation Ryzen (3000-series) processors will overcome a vast number of memory limitations faced by older Ryzen chips. With Zen 2, the company decided to separate the memory controller from the CPU cores into a separate chip, called "IO die". Our resident Ryzen memory guru Yuri "1usmus" Bubliy, author of DRAM Calculator for Ryzen, found technical info that confirms just how much progress AMD has been making.

The third generation Ryzen processors will be able to match their Intel counterparts when it comes to memory overclocking. In the Zen 2 BIOS, the memory frequency options go all the way up to "DDR4-5000", which is a huge increase over the first Ryzens. The DRAM clock is still linked to the Infinity Fabric (IF) clock domain, which means at DDR4-5000, Infinity Fabric would tick at 5000 MHz DDR, too. Since that rate is out of reach for IF, AMD has decided to add a new 1/2 divider mode for their on-chip bus. When enabled, it will run Infinity Fabric at half the DRAM actual clock (eg: 1250 MHz for DDR4-5000).

Apacer releases an all-new DDR4 desktop PC gaming memory with ultra-wide angle RGB lighting effects, built specifically for desktop gaming, overclocking and MOD enthusiasts. Designed with unique RGB lighting, high-class aluminum alloy heat sink, and based on the world's best industrial memory module and storage technologies, this state-of-the-art memory solution uses ICs that were meticulously selected for high gaming requirements and supports Intel XMP 2.0 for one-button overclocking. NOX RGB DDR4 has a mysterious, minimalist design for top gamers to unleash mysterious forces and enjoy ultimate gaming and overclocking experiences.

Apacer NOX RGB DDR4 uses unique ultra-wide angle RGB lighting effects featuring exquisitely carved lighting bar with natural, flowing RGB colors displayed in full view. NOX RGB DDR4 is certified by the software of major motherboard manufacturers such as ASUS AURA sync, GIGABYTE RGB Fusion, MSI Mystic Light Sync and ASRock Polychrome Sync. The RGB memory light effects can be easily controlled and synchronized with system lights, so that gamers have the freedom to configure light designs according to personal preferences to display unique styles, completely making your rig truly yours in bright fashion, day or night.

SK Hynix Inc., announced today that it has delivered samples of new 1Tb (Terabit) QLC (Quadruple Level Cell) product to major SSD (Solid State Drive) Controller companies. The Company applied its own QLC technology to its world's first 96-Layer "CTF (Charge Trap Flash) based 4D (Four-Dimensional) NAND Flash (or 4D NAND)." SK Hynix intends to expand its NAND portfolio to 96-layer-based 1Tb QLC products in time for the QLC market opening and strengthen its responsiveness to the next-generation high-density memory market.

QLC stores four bits of data in one NAND cell, allowing higher density compared to TLC (Triple Level Cell) that stores three bits per cell. Using QLC, it is possible to develop high-density products with cost competitiveness. SK Hynix is able to secure the industry's top-level cost competitiveness through this product, which has reduced the area to less than 90% of the existing 3D-based QLC products.

As the world becomes more and more centered on data, as well as its processing and storage, increased memory density across products is becoming more of a necessity. It seems that out of this necessity and a need to streamline its memory production towards favoring denser outputs, Samsung is killing of the famous B-die chips, which were - and still are - part of a love affair with any enthusiast's Ryzen desktop.

Memory compatibility issues with the first gen Ryzen took a while to dissipate, and didn't vanish entirely; however, overclockers quickly found that the most stable and overclockable memory ICs all were of the Samsung B-die type. Now, the company has updated its product catalogue to reflect EOL (End of Life) status for B-dies, replacing it with denser M-Die and A-Die products. M-dies were supposed to bring 32 GB densities to a single rank of memory - and have apparently been siphoned off to server applications and left out in the cold for consumer purchase), while the new A dies increase memory density per IC, meaning less of these are necessary to achieve the same final memory footprint. Whether or not these will feature the same Ryzen compatibility and overclockability as their B-die predecessors is unknown at this point, but it would make a lot of enthusiasts slightly unhappy - and increase the value of B-die offerings in any sort of discerning second-hand market - if they did not.

PATRIOT , a global leader in performance memory, SSDs, gaming peripherals, and flash storage solutions, today has announced the release of their latest Signature Premium series line of DDR4 UDIMM memory, which are Non-ECC unbuffered memory designed to deliver outstanding quality, rock solid stability and great performance expected by today's mainstream PC builder.

Signature Premium DDR4 memory provides a wide range of capacities allowing the builder to choose from a variety of speeds and capacities starting with 4GB single modules up to 32GB dual channel kits. The minimalist heat spreader design offers great heat dissipation and is made from high-purity aluminum. Signature Premium DDR4 series modules offer reliability to those who upgrade or build systems for work or business and are cost effective too.

HyperX, the gaming division of Kingston Technology, Inc., today announced the release of two new high speed Predator DDR4 memory kits in 4266 MHz and 4600 MHz frequency versions. The new frequency options will be available as 8GB modules in kits of two and include a black aluminum heat spreader and black PCB to complement the look of the latest PC builds by system builders and DIY PC enthusiasts.

"The HyperX team is excited to offer Predator DDR4 for the next generation of PC enthusiasts who want the best performance from their systems," said Kristy Ernt, DRAM business manager, HyperX. "As HyperX continues to support the world of gaming and esports, the community sees us as a trusted leader for high speed memory in the gaming hardware industry."

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today announces the launch of the SPECTRIX D60G DDR4 memory module. The XPG SPECTRIX D60G DDR4 memory features a unique dual RGB light diffuser design that gives it the largest RGB surface area of any memory module! What's more, it sports a wide frequency range from 3200-4133MHz and supports Intel XMP 2.0 profiles for easy overclocking.

The D60G sports more RGB lighting per mm² than any other memory module out there, which equates to over 60% of the module's surface area. The fully exposed light diffusers are extra-wide for maximum effect, and combined with a mesmerizing multi-colored flow effect users will outshine their competition! The unique avant-garde styling of the D60G will also turn heads. It includes XPG's signature X-light design with a diamond-inspired, multi-faceted surface that is a cut above the rest.

VIPER GAMING, a trademarked brand of PATRIOT and a global leader in performance memory, solid state drives, and flash storage solutions, today announced the release of Viper Steel Series DDR4 SODIMM Performance Memory featuring cutting-edge performance with speeds up to 3000 MHz, available from 8GB to 16GB.

Gamers bring their full tower desktop PC to a LAN party to enjoy a whole week of gaming, staying up late, and honing their gaming performance. However, they dread moving that large tower to and from the event. Gamers attend LAN events because they are a great way to socialize and strive to strike a balance between gaming, performance, and portability. Many gamers have been pushed to adopt a high-performance ITX desktop or gaming laptop instead of a clumsy full tower PC while sacrificing the performance they need.

Optane Persistent Memory is being touted by Intel as the "hottest" storage medium between DRAM and NVMe SSDs in the short-term, and a successor to DRAM-based memory in the long-term, aided by its ability to hold data even in the absence of power. The company's latest Xeon Scalable "Cascade Lake" processors support Optane Persistent Memory, allowing data-centers to cram larger amounts of data accessible at DRAM-like speeds, even if at much higher latencies. It remains significantly faster than NVMe SSDs. Component retails began listing 512 GB modules of the Optane Persistent Memory, and its prices are nothing like your 512 GB NVMe SSD. CompSource lists the 512 GB module (model: NMA1XXD512GPSU4) for a whopping USD $7,816, although the product is out of stock.

Prices of PC DDR4 memory modules are normalizing to 3-year lows as the pre-Summer PC upgrade season looms and several AAA game launches line up. 8 GB (2x 4 GB) dual-channel DDR4 memory kits have dropped to around USD $50 on popular PC component retailers such as Newegg, 16 GB (2x 8 GB) kits can be had for $80 at DDR4-2667 speeds. Premium 16 GB dual-channel kits (DDR4-3200 and above) start at $99. Premium 16 GB kits with RGB embellishments now typically start at $120.

Perhaps the biggest news from these memory price drops come in the form of capacity. 32 GB dual-channel (2x 16 GB) memory kits now start for as little as $144, for a kit with two dual-rank DDR4-2667 modules. Premium 32 GB kits, with RGB lighting and speeds as high as DDR4-3000 now start at $180. HEDT builders also have reason to cheer, as 32 GB quad-channel (4x 8 GB) kits start for as little as $150, and premium kits with DDR4-3000 frequency can be had for as little as $184. Newegg and the US aren't the only places you can find sharp drops in memory prices. Even across the big pond in Germany, we've been tracking significant drops in memory prices, with 16 GB dual-channel kits starting at 79€, premium 16 GB kits around 100€, 32 GB kits at 160€, and premium 32 GB kits around 190€.

Intel Tuesday unveiled a new portfolio of data-centric solutions consisting of 2nd-Generation Intel Xeon Scalable processors, Intel Optane DC memory and storage solutions, and software and platform technologies optimized to help its customers extract more value from their data. Intel's latest data center solutions target a wide range of use cases within cloud computing, network infrastructure and intelligent edge applications, and support high-growth workloads, including AI and 5G.

Building on more than 20 years of world-class data center platforms and deep customer collaboration, Intel's data center solutions target server, network, storage, internet of things (IoT) applications and workstations. The portfolio of products advances Intel's data-centric strategy to pursue a massive $300 billion data-driven market opportunity.

Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has begun sampling new Automotive JEDEC UFS Version 2.1 embedded memory solutions utilizing 3D flash memory. The new products are embedded flash memory devices that integrate the company's BiCS FLASH 3D flash memory and a controller in a single package. The sequential read and write performance are improved by approximately 6 percent and 33 percent, respectively, over existing devices.

The company's Automotive UFS supports a wide temperature range (-40°C to +105°C), meets AEC-Q100 Grade 2 requirements and offers the enhanced reliability required by various automotive applications. The lineup consists of four capacities: 32GB, 64GB, 128GB, and 256GB.

AMD will launch its 3rd generation Ryzen 3000 Socket AM4 desktop processors in 2019, with a product unveiling expected mid-year, likely on the sidelines of Computex 2019. AMD is keeping its promise of making these chips backwards compatible with existing Socket AM4 motherboards. To that effect, motherboard vendors such as ASUS and MSI began rolling out BIOS updates with AGESA-Combo 0.0.7.x microcode, which adds initial support for the platform to run and validate engineering samples of the upcoming "Zen 2" chips.

At CES 2019, AMD unveiled more technical details and a prototype of a 3rd generation Ryzen socket AM4 processor. The company confirmed that it will implement a multi-chip module (MCM) design even for their mainstream-desktop processor, in which it will use one or two 7 nm "Zen 2" CPU core chiplets, which talk to a 14 nm I/O controller die over Infinity Fabric. The two biggest components of the IO die are the PCI-Express root complex, and the all-important dual-channel DDR4 memory controller. We bring you never before reported details of this memory controller.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the highest-capacity mobile DRAM - the industry's first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) package - optimized for tomorrow's premium smartphones. Featuring higher capacity than most ultra-thin notebooks, the new mobile DRAM will enable smartphone users to take full advantage of all the features in next-generation smartphones.

"With mass production of the new LPDDR4X, Samsung is now providing a comprehensive lineup of advanced memory to power the new era of smartphones, from 12GB mobile DRAM to 512GB eUFS 3.0 storage," said Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics. "Moreover, with the LPDDR4X, we're strengthening our position as the premium mobile memory maker best positioned to accommodate rapidly growing demand from global smartphone manufacturers."

The latest analysis of the PC DRAM market from DRAMeXchange, a division of TrendForce, finds that most contracts are now monthly deals rather than quarterly deals, with February even seeing a most unusual, large down-correction in prices. The current quarterly decline dropped from the originally projected 25% to nearly 30%, resulting in the sharpest decline in a single season since 2011.

DRAMeXchange points out that, according to the most recent market observations, inventory levels have kept climbing ever since overall contract prices dropped in the fourth quarter of last year, and most DRAM suppliers are currently holding around a whopping six weeks' worth of inventory (wafer banks included). Meanwhile, Intel's low-end CPU supply shortage is expected to last until the end of 3Q19, and PC-OEMs are unable to carry out the consumption of DRAM chips under demand suppression. The overall market has thus entered freefall, meaning that large reductions in prices aren't going to be effective in driving sales. The excessively high inventory will continue to cause down-corrections in prices this year if demand doesn't make a strong comeback.

NVIDIA's upcoming entry-mainstream graphics card based on the "Turing" architecture, the GeForce GTX 1650, will feature 4 GB of GDDR5 memory, according to tech industry commentator Andreas Schilling. Schilling also put out mast box-art by NVIDIA for this SKU. The source does not mention memory bus width. In related news, Schilling also mentions NVIDIA going with 6 GB as the memory amount for the GTX 1660. NVIDIA is expected to launch the GTX 1660 mid-March, and the GTX 1650 late-April.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) 3.0 for next-generation mobile devices. In line with the latest eUFS 3.0 specification, the new Samsung memory delivers twice the speed of the previous eUFS storage (eUFS 2.1), allowing mobile memory to support seamless user experiences in future smartphones with ultra-large high-resolution screens.

"Beginning mass production of our eUFS 3.0 lineup gives us a great advantage in the next-generation mobile market to which we are bringing a memory read speed that was before only available on ultra-slim laptops," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "As we expand our eUFS 3.0 offerings, including a 1-Terabyte (TB) version later this year, we expect to play a major role in accelerating momentum within the premium mobile market."

Toshiba Memory Corporation, the world leader in memory solutions, today announced the development of a bridge chip that realizes high-speed and large-capacity SSDs. Using developed bridge chips with a small occupied area and low-power consumption, the company has succeeded in connecting more flash memory chips with fewer high-speed signal lines than with the conventional method of no bridge chips. This result was announced in San Francisco on February 20, at the International Solid-State Circuits Conference 2019 (ISSCC 2019).

In SSDs, multiple flash memory chips are connected to a controller that manages their operation. As more flash memory chips are connected to a controller interface, operating speed degrades, so there are limits to the number of chips that can be connected. In order to increase capacity, it is necessary to increase the number of interfaces, but that results in an enormous number of high-speed signal lines connected to the controller, making it more difficult to implement the wiring on the SSD board.

CORSAIR, a world leader in PC gaming peripherals and enthusiast components, today announced the launch of DOMINATOR PLATINUM RGB DDR4 Memory, raising the bar once again for premium, world-class DRAM. DOMINATOR PLATINUM RGB delivers the high performance that custom PC enthusiasts demand for their cutting-edge systems, while renewing the celebrated and iconic design of DOMINATOR PLATINUM. A fully updated aluminum heatspreader, hand-sorted memory chips, frequencies up to a record-setting 4,800 MHz, and individually addressable RGB lighting - a first for a DOMINATOR PLATINUM module - combine to create DDR4 memory that's in a class of its own.

A report via EETimes slates Intel's own working MRAM (Magnetoresistive Random-Access Memory) is ready for production in high-volume manufacturing. MRAM is a nonvolatile memory technology, meaning that it retains information even if there is a change in powerstate (ie, power loss), meaning that it's more akin to a storage device than to, say, RAM.

But why does MRAM matter, really? Well, MRAM is being developed as a long-term candidate to a universal memory solution, replacing both DRAM (a volatile memory technology) and NAND flash (a nonvolatile one), since node scaling with these technologies is becoming increasingly harder. MRAM promises better-scaling (at the foundry level) processes, with much higher yield rates. The fact that MRAM has been demonstrated to be able to achieve 1 ns settling times, better than the currently accepted theoretical limits for DRAM, and much higher write speeds (as much as thousands of times faster) compared to NAND flash.

T-FORCE gaming memory from TEAMGROUP goes beyond the limit and receives international awards again. After receiving COMPUTEX Golden Pin Design Award last year, T-FORCE XCALIBUR RGB gaming memory has won the iF International Design Award again earlier this year. The award-winning T-FORCE XCALIBUR RGB gaming memory has the Taiwan utility model patent (number: M565883). This memory is incomparable as a king's sword and it shines globally with its excellent all-round design.

The German iF Product Design Award is known as the Oscar Award in design field. This globally well-known product design award was founded in 1953 and it is also the world's top design quality indicator. This year, the German IF Award has gathered the world's top 67 international jury members and received 6375 entries from 52 countries. The T-FORCE XCALIBUR won the award over numerous outstanding entries. A remarkable result like this, once again proves the T-FORCE gaming memory has both top performance and a solid design strength that can stun everyone in the world stage.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD209-5, Low Power Double Data Rate 5 (LPDDR5). LPDDR5 will eventually operate at an I/O rate of 6400 MT/s, 50% higher than that of the first version of LPDDR4, which will significantly boost memory speed and efficiency for a variety of applications including mobile computing devices such as smartphones, tablets, and ultra-thin notebooks. In addition, LPDDR5 offers new features designed for mission critical applications such as automotive. Developed by JEDEC's JC-42.6 Subcommittee for Low Power Memories, LPDDR5 is available for download from the JEDEC website.

With the doubling of memory throughput over the previous version of the standard (LPDDR5 is being published with a data rate of 6400 MT/s, compared to 3200 MT/s for LPDDR4 at its publication in 2014), LPDDR5 promises to have an enormous impact on the performance and capabilities of the next generation of portable electronic devices. To achieve this performance improvement, LPDDR5 architecture was redesigned; moving to 16Banks programmable architecture and multi-clocking architecture.

Corsair unveiled four new Vengeance LPX series DDR4 memory kits tailored for high-end desktops based on the Xeon W-3175X processor. Of these, one is a 96 GB (12 x 8 GB) kit, and the other four 192 GB (12 x 16 GB), which max out the processor's memory support. The 96 GB kit (CMK96GX4M12P4000C19) ticks at DDR4-4000 MHz, and 19-23-23-45 timings at 1.35 V. The 192 GB kit comes in four flavors based on speed: DDR4-2667, DDR4-3200, DDR4-3600, and DDR4-4000. Corsair has tested the XMP 2.0 profiles of these modules to work on the ASUS ROG Dominus motherboard.

The top-dog 192 GB DDR4-4000 kit (CMK192GX4M12P4000C19) is priced at USD $2,999. It achieves DDR4-4000 with 19-23-23-45 timings and 1.35 V. The 192 GB DDR4-3600 kit (CMK192GX4M12P3600C18) goes for $2,319, with 18-19-19-39 timings, and 1.35 V. The 192 GB DDR4-3200 kit (CMK192GX4M12P3200C16) is significantly cheaper at $1,719, and ticks at 16-18-18-36. Lastly, the most "affordable" 192 GB DDR4-2666 kit (CMK192GX4M12P2666C16) can be yours for $1,584. You get 16-18-18-35 timings at 1.2 V. The DDR4-4000 models of both the 96 GB and 192 GB kits include a set of two Vengeance Airflow memory coolers.