Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) 3.0 for next-generation mobile devices. In line with the latest eUFS 3.0 specification, the new Samsung memory delivers twice the speed of the previous eUFS storage (eUFS 2.1), allowing mobile memory to support seamless user experiences in future smartphones with ultra-large high-resolution screens.

"Beginning mass production of our eUFS 3.0 lineup gives us a great advantage in the next-generation mobile market to which we are bringing a memory read speed that was before only available on ultra-slim laptops," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "As we expand our eUFS 3.0 offerings, including a 1-Terabyte (TB) version later this year, we expect to play a major role in accelerating momentum within the premium mobile market."

Toshiba Memory Corporation, the world leader in memory solutions, today announced the development of a bridge chip that realizes high-speed and large-capacity SSDs. Using developed bridge chips with a small occupied area and low-power consumption, the company has succeeded in connecting more flash memory chips with fewer high-speed signal lines than with the conventional method of no bridge chips. This result was announced in San Francisco on February 20, at the International Solid-State Circuits Conference 2019 (ISSCC 2019).

In SSDs, multiple flash memory chips are connected to a controller that manages their operation. As more flash memory chips are connected to a controller interface, operating speed degrades, so there are limits to the number of chips that can be connected. In order to increase capacity, it is necessary to increase the number of interfaces, but that results in an enormous number of high-speed signal lines connected to the controller, making it more difficult to implement the wiring on the SSD board.

CORSAIR, a world leader in PC gaming peripherals and enthusiast components, today announced the launch of DOMINATOR PLATINUM RGB DDR4 Memory, raising the bar once again for premium, world-class DRAM. DOMINATOR PLATINUM RGB delivers the high performance that custom PC enthusiasts demand for their cutting-edge systems, while renewing the celebrated and iconic design of DOMINATOR PLATINUM. A fully updated aluminum heatspreader, hand-sorted memory chips, frequencies up to a record-setting 4,800 MHz, and individually addressable RGB lighting - a first for a DOMINATOR PLATINUM module - combine to create DDR4 memory that's in a class of its own.

A report via EETimes slates Intel's own working MRAM (Magnetoresistive Random-Access Memory) is ready for production in high-volume manufacturing. MRAM is a nonvolatile memory technology, meaning that it retains information even if there is a change in powerstate (ie, power loss), meaning that it's more akin to a storage device than to, say, RAM.

But why does MRAM matter, really? Well, MRAM is being developed as a long-term candidate to a universal memory solution, replacing both DRAM (a volatile memory technology) and NAND flash (a nonvolatile one), since node scaling with these technologies is becoming increasingly harder. MRAM promises better-scaling (at the foundry level) processes, with much higher yield rates. The fact that MRAM has been demonstrated to be able to achieve 1 ns settling times, better than the currently accepted theoretical limits for DRAM, and much higher write speeds (as much as thousands of times faster) compared to NAND flash.

T-FORCE gaming memory from TEAMGROUP goes beyond the limit and receives international awards again. After receiving COMPUTEX Golden Pin Design Award last year, T-FORCE XCALIBUR RGB gaming memory has won the iF International Design Award again earlier this year. The award-winning T-FORCE XCALIBUR RGB gaming memory has the Taiwan utility model patent (number: M565883). This memory is incomparable as a king's sword and it shines globally with its excellent all-round design.

The German iF Product Design Award is known as the Oscar Award in design field. This globally well-known product design award was founded in 1953 and it is also the world's top design quality indicator. This year, the German IF Award has gathered the world's top 67 international jury members and received 6375 entries from 52 countries. The T-FORCE XCALIBUR won the award over numerous outstanding entries. A remarkable result like this, once again proves the T-FORCE gaming memory has both top performance and a solid design strength that can stun everyone in the world stage.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD209-5, Low Power Double Data Rate 5 (LPDDR5). LPDDR5 will eventually operate at an I/O rate of 6400 MT/s, 50% higher than that of the first version of LPDDR4, which will significantly boost memory speed and efficiency for a variety of applications including mobile computing devices such as smartphones, tablets, and ultra-thin notebooks. In addition, LPDDR5 offers new features designed for mission critical applications such as automotive. Developed by JEDEC's JC-42.6 Subcommittee for Low Power Memories, LPDDR5 is available for download from the JEDEC website.

With the doubling of memory throughput over the previous version of the standard (LPDDR5 is being published with a data rate of 6400 MT/s, compared to 3200 MT/s for LPDDR4 at its publication in 2014), LPDDR5 promises to have an enormous impact on the performance and capabilities of the next generation of portable electronic devices. To achieve this performance improvement, LPDDR5 architecture was redesigned; moving to 16Banks programmable architecture and multi-clocking architecture.

Corsair unveiled four new Vengeance LPX series DDR4 memory kits tailored for high-end desktops based on the Xeon W-3175X processor. Of these, one is a 96 GB (12 x 8 GB) kit, and the other four 192 GB (12 x 16 GB), which max out the processor's memory support. The 96 GB kit (CMK96GX4M12P4000C19) ticks at DDR4-4000 MHz, and 19-23-23-45 timings at 1.35 V. The 192 GB kit comes in four flavors based on speed: DDR4-2667, DDR4-3200, DDR4-3600, and DDR4-4000. Corsair has tested the XMP 2.0 profiles of these modules to work on the ASUS ROG Dominus motherboard.

The top-dog 192 GB DDR4-4000 kit (CMK192GX4M12P4000C19) is priced at USD $2,999. It achieves DDR4-4000 with 19-23-23-45 timings and 1.35 V. The 192 GB DDR4-3600 kit (CMK192GX4M12P3600C18) goes for $2,319, with 18-19-19-39 timings, and 1.35 V. The 192 GB DDR4-3200 kit (CMK192GX4M12P3200C16) is significantly cheaper at $1,719, and ticks at 16-18-18-36. Lastly, the most "affordable" 192 GB DDR4-2666 kit (CMK192GX4M12P2666C16) can be yours for $1,584. You get 16-18-18-35 timings at 1.2 V. The DDR4-4000 models of both the 96 GB and 192 GB kits include a set of two Vengeance Airflow memory coolers.

Advantech, a leading global flash storage and memory solutions provider in the embedded market, announces the industry's most comprehensive lineup of 32GB DDR4 unbuffered DIMM memory. Advantech SQRAM offers single 32GB DRAM modules in various DIMM types including SODIMM, UDIMM, ECC DIMM, and extremely robust Rugged DIMM with guaranteed wide temperature operation for high performance computing in applications such as networking and military.

As the global IoT market gradually embraces big data and edge computing, demand for high data and performance processing is increasing. SQRAM 32 GB unbuffered DIMM memory uses Samsung's 16 Gb 2666 MT/s IC chips for high reliability requirements in mission critical applications. SQRAM 32 GB wide temperature operation (-40~85 °C) Rugged DIMM offers extreme vibration resistance, plus ECC checking to ensure data accuracy.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first one-terabyte (TB) embedded Universal Flash Storage (eUFS) 2.1, for use in next-generation mobile applications. Just four years after introducing the first UFS solution, the 128-gigabyte (GB) eUFS, Samsung has passed the much-anticipated terabyte threshold in smartphone storage. Smartphone enthusiasts will soon be able to enjoy storage capacity comparable to a premium notebook PC, without having to pair their phones with additional memory cards.

"The 1 TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "What's more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market."

G.SKILL International Enterprise Co., Ltd., the world's leading manufacturer of extreme performance memory and gaming peripherals, is exhilarated to announce new ultra-fast, ultra-high capacity Trident Z Royal DDR4 RGB memory specifications designed for use with the latest unlocked 28-core Intel Xeon W-3175X processor. Operating in hexa-channel with 6- or 12-module kit configurations, these new 6-channel Trident Z Royal memory kits can reach insane memory speeds of up to DDR4-4000 CL17-18-18-38 at 1.35V, which feature extreme performance Samsung B-die memory ICs. With fast memory speed and massive capacity, these hexa-channel memory kits are perfect for heavy-workload workstations when paired with the 28-core Xeon processor.

As computing technology improves, the amount of processed data also increases, leading to a demand for more memory channels and higher bandwidth. For the first time, this new platform introduces hexa-channel memory support to the larger consumer market, which was previously only found in server-class systems. While operating under 6-channels, the extreme performance DDR4-4000 CL17 96GB (8GBx12) memory kit reaches a blazing fast read bandwidth speed of 122GB/s - a substantial increase over currently available quad-channel platforms. See below for a screenshot of the bandwidth result from the AIDA64 memory benchmark:

The Intel Xeon W-3175X processor is available today. This unlocked 28-core workstation powerhouse is built for select, highly-threaded and computing-intensive applications such as architectural and industrial design and professional content creation. Built for handling heavily threaded applications and tasks, the Intel Xeon W-3175X processor delivers uncompromising single- and all-core world-class performance for the most advanced professional creators and their demanding workloads.

G.SKILL, the world's leading manufacturer of extreme performance memory and gaming peripherals, is delighted to announce high-frequency, high-capacity RGB memory kits at DDR4-4266MHz CL18-22-22-42 with 64GB (8x8GB) capacity. These ultimate specification memory kits are built with high performance Samsung B-die components and will be available under both Trident Z RGB and Trident Z Royal series.

GIGABYTE TECHNOLOGY Co. Ltd, a leading manufacturer of motherboards and graphics cards, announced that its Z390 and C246 motherboards now fully support 32GB Unbuffered memory per DIMM slot for up to 128GB total memory capacity on 4DIMM configurations, providing increased memory capacity for users. Additional BIOS updates will soon be rolled out to enable support for other 300 series motherboards.

Up until now, 32GB memory per DIMM slot was primarily limited to workstation ready motherboards with registered memory for users to fulfill memory-intensive tasks on their system. GIGABYTE has worked closely with Intel to ensure that GIGABYTE Z390 series motherboards paired with 9th Gen. processors can support 32GB memory per DIMM slot.

Sapphire has reportedly developed an odd-ball Radeon RX 570 graphics card, equipped with 16 GB of GDDR5 memory, double the memory amount the SKU is possibly capable of. The card is based on the company's NITRO+ board design common to RX 570 thru RX 590 SKUs, and uses sixteen 8 Gbit GDDR5 memory chips that are piggybacked (i.e. chips on both sides of the PCB). When Chinese tech publication MyDrivers reached out to Sapphire for an explanation behind such a bizarre contraption, the Hong Kong-based AIB partner's response was fascinating.

Sapphire in its response said that they wanted to bolster the card's crypto-currency mining power, and giving the "Polaris 20" GPU additional memory would improve its performance compared to ASIC miners using the Cuckoo Cycle algorithm. This can load up the video memory anywhere between 5.5 GB to 11 GB, and giving the RX 570 16 GB of it was Sapphire's logical next step. Of course Cuckoo Cycle is being defeated time and again by currency curators. This card will be a stopgap for miners until ASIC mining machines with expanded memory come out, or the proof-of-work systems are significantly changed.

SUSE today announced support for Intel Optane DC persistent memory with SAP HANA . Running on SUSE Linux Enterprise Server for SAP Applications, SAP HANA users can now take advantage of high-capacity Intel Optane DC persistent memory in the data center. Users can optimize their workloads by moving and maintaining larger amounts of data closer to the processor and minimizing the higher latency of fetching data from system storage during maintenance. Support for Intel Optane DC persistent memory, currently available in beta from multiple cloud service providers and hardware vendors, is another way SUSE is helping customers transform their IT infrastructures to reduce costs, deliver higher performance and compete more efficiently.

"Persistent memory technology will spark new applications for data access and storage," said Thomas Di Giacomo, SUSE CTO. "By offering a fully supported solution built on Intel Optane DC persistent memory, businesses can take greater advantage of the performance of SAP HANA. SUSE continues to partner with companies like SAP and Intel to serve customers worldwide who are looking to fuel growth by transforming their IT infrastructure. It is their needs that drive the direction of our innovation."

ASUS today announced that its Z390 motherboards will support a maximum DRAM capacity of 128GB via a UEFI BIOS update that's being rolled out from today on the ASUS support site. ASUS will bring this increased memory support to all Z390 motherboards via additional BIOS updates that will be available soon.

Previously, support for 128GB of DRAM was available only on high-end desktop (HEDT) motherboards with eight DIMM slots, such as the Intel X299 platform. Intel recently updated its memory reference code (MRC), enabling the memory controller in 9th Gen Intel Core processors to increase the supported capacity of each DIMM from 16GB to 32GB, resulting in a total system memory capacity of 128GB when populated with two DIMMs per channel (2DPC) on both memory channels. This increased memory support gives users more flexibility for running memory-intensive applications and tasks.

Akasa unveiled the Vegas RAM Mate, the company's entry to the lucrative RGB memory heatspreader market. Borrowing a lot of design ideas from G.Skill's Trident-Z series, this heatspreader consists of two brushed aluminium plates that sandwich a silicone RGB LED diffuser at the top, with eight diodes. The RGB setup supports both 4-pin RGB and 3-pin addressable-RGB connectors. The heatspreader itself supports both VLP 18.3~18.7 mm-tall, and standard 30 mm-tall memory modules, which could be anything DDR1-thru-DDR4, as long as it's standard width (and not SO-DIMM). Akasa appears to be selling these in single-unit quantities, as opposed to some other companies selling their products in 2-piece kits. We expect it to be priced around USD $20-25.

A quick trip to see Patriot at CES 2019 netted us a chance to look over a massive number of products from SSDs and DDR4 memory, to flash drives and Micro SD cards. In general, when it comes to anything memory or storage related they had everything but the kitchen sink on hand. That said, let's start with system memory. To begin with, they had their Signature Line on hand which uses a simple black aluminum heatshield and comes in capacities up to 16 GB per module with speeds up to 2666 MHz. For a single 16 GB stick at 2666 MHz the listed the timings at 19-19-19-43. Next was the new Viper Steel DDR4 SODIMMs with capacity that ranged from 8 GB to 32 GB and feature XMP 2.0 support for automatic overclocking. As for speeds they top out at 3000 MHz for these kits. Next up was the Viper RGB memory which comes in speeds of up to 4133 MHz and with timings listed at 19-21-21-41. They are also compatible with motherboard RGB sync applications and have been tested on the latest Intel and AMD platforms. Last but not least were the Viper Steel kits which top out at 4400 MHz with 19-19-19-39 timings.

TEAMGROUP, the world's leading memory brand, today joins forces with motherboard leader ASRock and release the cobranded Phantom Gaming RGB solid state drive and RGB memory. Both of them are certified and strictly tested by ASRock Phantom Gaming and their lighting effects can be both synchronized with motherboard and officially presented in CES 2019.

The read/write speed performance of T-FORCE DELTA Phantom Gaming RGB SSD(5V) is fully evolved, you can upgrade your computer easily; T-FORCE XCALIBUR Phantom Gaming RGB luminous memory uses high quality OEM IC chips, and also has an eye-catching 120° wide angle RGB lighting range. The easy overclocking feature also receives top recommendations from gamers.

Capellix is an innovation new RGB LED design by Corsair, which has significantly reduced size, power-draw, while offering increased brightness and durability, compared to conventional SMD LEDs. You can read all about these in our older article. The first product to implement Capellix is Corsair's upcoming flagship memory series, the 2019 Dominator Platinum RGB. These modules each feature 12 individually addressable Capellix aRGB LEDs, which take up significantly lower PCB real-estate than SMD LEDs on older generations of Corsair memory modules.

A silicone diffuser puts out light from these diodes through slits along the sides and top of the modules. The LEDs are fully compatible with Corsair iCUE software, in addition to pretty much any addressable-RGB software. The modules themselves feature hand-binned DRAM chips, cooled by die-cast, micro-arc oxidized anodized aluminium heatspreaders. The first of these could be out in February 2019.

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today announces that it will be in Las Vegas during this year's CES to showcase its exciting new products for gamers, overclockers, PC enthusiasts, and general users. Under the theme of "Innovating the Future," ADATA will be presenting its latest hardware including solid-state drives (SSD), memory modules, and gaming accessories. ADATA will be showcasing its products from January 9-12, 2019.

RAIDMAX launched the MX-902F, a set of two heatspreaders for full-length DDR4 thru DDR2 memory modules, which add RGB multi-color LED bling. The heatspreaders are made of an aluminium alloy, with silicone diffusers for five addressable RGB LEDs that can put out 16.7 million colors. Each of the two heatspreaders take in standardized 3-pin addressable-RGB input, and daisy-chain a single aRGB source between the two heatspreaders. The heatspreaders are 51 mm tall (factor in some additional height when installed with a module), 8 mm-thick, and 127 mm long. The company didn't reveal pricing.

TEAMGROUP is proudly announcing the T-FORCE has done to the apex again, work with world's Korean renown overcloker, SAFEDISK, by using the T-FORCE XTREEM DDR4 4500 MHz modules all the way grabbed the world record of SUPER PI 32m calculation, successfully beat all the powerful professional overclockers from HWBOT and all over the world. This excellent performance of T-FORCE XTREEM made the possibility of completion on SUPER PI 32m calculation within 4 minutes and 5 seconds which is unbelievably amazing!

SUPER PI is a significant DRAM module overclocking benching application, also a way to check the overall module specification stability. This time T-FORCE understands need to show the high performance and stability in front of all the users. Thus works with SAFEDISKset up the test environment including T-FORCE XTREEM DDR4 4500 MHz module, Intel Core i9 9900K "Coffee Lake Refresh" CPU and ASUS ROG Maximus IX Apex motherboard. Without a doubt, the world record has been posted at HWBOT and all over the public platform in front of everyone to be the witness of all this awesome performance record from T-FORCE module.

When GIGABYTE originally launched the Aorus RGB Memory DDR4-3200 16GB dual-channel memory kit, it included a pair of dummy modules that resemble the real thing, and let you fill up the blank memory slots of your motherboard. Dummy modules add to the cost, and some users simply don't prefer them, and so the company introduced a new kit bearing the SKU "GP-AR32C16S8K2HU416R," which lacks these dummies.

You get two 8 GB memory modules making up the 16 GB dual-channel kit, each with a chunky 2 mm-thick aluminium heatspreader capped by an acrylic diffuser that puts out light from five addressable RGB LEDs. These modules pack an XMP 2.0 profile that runs them at DDR4-3200 with 16-18-18-38 timings, at 1.35 V. Although the company doesn't specify which brand of DRAM chips it's using, it mentions support for both Intel and AMD platforms.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of an update to JESD235 High Bandwidth Memory (HBM) DRAM standard. HBM DRAM is used in Graphics, High Performance Computing, Server, Networking and Client applications where peak bandwidth, bandwidth per watt, and capacity per area are valued metrics to a solution's success in the market. The standard was developed and updated with support from leading GPU and CPU developers to extend the system bandwidth growth curve beyond levels supported by traditional discrete packaged memory. JESD235B is available for download from the JEDEC website.

JEDEC standard JESD235B for HBM leverages Wide I/O and TSV technologies to support densities up to 24 GB per device at speeds up to 307 GB/s. This bandwidth is delivered across a 1024-bit wide device interface that is divided into 8 independent channels on each DRAM stack. The standard can support 2-high, 4-high, 8-high, and 12-high TSV stacks of DRAM at full bandwidth to allow systems flexibility on capacity requirements from 1 GB - 24 GB per stack.