
GLOBALFOUNDRIES Delivers Industry's First Production-ready eMRAM on 22FDX Platform
GLOBALFOUNDRIES (GF ) today announced its embedded magnetoresistive non-volatile memory (eMRAM) on the company's 22 nm FD-SOI (22FDX ) platform has entered production, and GF is working with several clients with multiple production tape-outs scheduled in 2020. Today's announcement represents a significant industry milestone, demonstrating the scalability of eMRAM as a cost-effective option at advanced process nodes for Internet of Things (IoT), general-purpose microcontrollers, automotive, edge-AI (Artificial Intelligence), and other low-power applications.
Designed as a replacement for high-volume embedded NOR flash (eFlash), GF's eMRAM allows designers to extend their existing IoT and microcontroller unit architectures to access the power and density benefits of technology nodes below 28 nm.
Designed as a replacement for high-volume embedded NOR flash (eFlash), GF's eMRAM allows designers to extend their existing IoT and microcontroller unit architectures to access the power and density benefits of technology nodes below 28 nm.