There could be light at the end of the tunnel for Intel's silicon fabrication business after all, as the company reported that its 7 nanometer silicon fabrication node, which incorporates EUV (extreme ultraviolet) lithography, is on track. The company stressed in its Nasdaq Investors' Conference presentation that its 7 nm EUV process is de-linked from its 10 nm DUV (deep ultraviolet) node, and that there are separate teams working on their development. The 10 nm DUV node is qualitatively online, and is manufacturing small batches of low-power mobile "Cannon Lake" Core processors.

Cannon Lake is an optical shrink of the "Skylake" architecture to the 10 nm node. Currently there's only one SKU based on it, the Core i3-8121U. Intel utilized the electrical gains from the optical shrink to redesign the client-segment architecture's FPU to support the AVX-512 instruction-set (although not as feature-rich as the company's enterprise-segment "Skylake" derivatives). The jump from 10 nm DUV to 7 nm EUV will present a leap in transistor densities, with Intel expecting nothing short of a doubling. 10 nm DUV uses a combination of 193 nm wavelength ultraviolet lasers and multi-patterning to achieve its transistor density gains over 14 nm++. The 7 nm EUV node uses an extremely advanced 135 nm indirect laser, reducing the need for multi-patterning. The same laser coupled with multi-patterning could be Intel's ticket to 5 nm.

For years Intel was able to maintain their endless tick-tock cycle however with the switch from 14nm to 10nm Intel realized all too late that they had bitten off more than they could chew. According to Robert Swan, Intel's Interim Chief Executive Officer and Chief Financial Officer, "we set out in the transition to 10 nm to attempt to scale much faster than we ever had at a time when I think most would argue the technology and the science and the challenges are more challenging they've ever been. So, we took a fairly aggressive scaling factor, roughly 2x of what the competitors do. So, we went for the analogy that a grand slam, I think, when the competition was hitting really solid singles."

Essentially Intel had hedged their bets that they could take a revolutionary step instead of the more typical evolutionary one thereby leaving their competition behind. Instead, it's resulted in the current situation that we are all very much aware of, that Intel is far behind their original predicted schedule. While that timeline has since been revised and they are now on course to release 10nm products in 2019, and 2020 Intel has also made it known that they plan to regain their leadership position as that transition begins.

NVIDIA could launch successors to its GeForce GTX 1060 series and GTX 1050 series only by 2019, according to a statement by an ASUS representative, speaking with PC Watch. This could mean that the high-end RTX 2080 Ti, RTX 2080, and RTX 2070, could be the only new SKUs for Holiday 2018 from NVIDIA, alongside cut-rate GeForce GTX 10-series SKUs. This could be a combination of swelling inventories of 10-series GPUs, and insufficient volumes of mid-range RTX 20-series chips, should NVIDIA even decide to extend real-time ray-tracing to mid-range graphics cards.

The way NVIDIA designed the RTX 2070 out of the physically smaller TU106 chip instead of TU104 leads us to believe that NVIDIA could carve out the GTX 1060-series successor based on this chip, since the RTX 2070 maxes it out, and NVIDIA needs to do something with imperfect chips. An even smaller chip (probably half-a-TU104?) could power the GTX 1050-series successor.

A former employee of TSMC, Taiwan's premier silicon fabrication foundry, has been charged with stealing trade-secrets to his next employer across the straits. Mentioned as "Chou" by DigiTimes, the employee has been charged with IP theft and smuggling trade-secrets of vital 10 nanometer and 16 nanometer silicon fabrication technologies over to his next job at Shanghai Huali Microelectronics (HLMC).

Before Chou could flee TSMC to HLMC, he was arrested by Taiwan Police, and indicted for breach of trust. With the matter now in the hands of the applicable District Prosecutors' Office, it has become subjudice and TSMC isn't issuing comments. Development of 10 nanometer (and newer) silicon fabrication nodes is proving exceedingly costly and painstaking for foundry companies, and it hurts their future just that much worse when someone does away with billions of dollars worth R&D.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 2nd-generation of 10-nanometer-class (1y-nm), LPDDR4X (Low Power, Double Data Rate, 4X) DRAM to improve the efficiency and lower the battery drain of today's premium smartphones and other mobile applications. Compared to the mobile DRAM memory chips most used in current flagship mobile devices (1x-nm 16Gb LPDDR4X), the 2nd- generation LPDDR4X DRAM features up to a 10 percent power reduction while maintaining the same data rate of 4,266 megabits per second (Mb/s).

"The advent of 10nm-class mobile DRAM will enable significantly enhanced solutions for next-generation, flagship mobile devices that should first hit the market late this year or the first part of 2019." said Sewon Chun, senior vice president of Memory Sales & Marketing at Samsung Electronics. "We will continue to grow our premium DRAM lineup to lead the 'high-performance, high capacity, and low power' memory segment to meet the market demand and strengthen our business competitiveness."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has started mass producing the industry's first 32-gigabyte (GB) double data rate 4 (DDR4) memory for gaming laptops in the widely used format of small outline dual in-line memory modules (SoDIMMs). The new SoDIMMs are based on 10-nanometer (nm)-class process technology that will allow users to enjoy enriched PC-grade computer games on the go, with significantly more capacity, higher speeds and lower energy consumption.

Using the new memory solution, PC manufacturers can build faster top-of-the-line gaming-oriented laptops with longer battery life at capacities exceeding conventional mobile workstations, while maintaining existing PC configurations. "Samsung's 32GB DDR4 DRAM modules will deliver gaming experiences on laptops more powerful and immersive than ever before," said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. "We will continue to provide the most advanced DRAM portfolios with enhanced speed and capacity for all key market segments including premium laptops and desktops."

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing 10-nanometer (nm)-class 16-gigabit (Gb) LPDDR4X DRAM for automobiles. The latest LPDDR4X features high performance and energy efficiency while significantly raising the thermal endurance level for automotive applications that often need to operate in extreme environments. The 10nm-class DRAM will also enable the industry's fastest automotive DRAM-based LPDDR4X interface with the highest density.

"The 16Gb LPDDR4X DRAM is our most advanced automotive solution yet, offering global automakers outstanding reliability, endurance, speed, capacity and energy efficiency, ," said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. "Samsung will continue to closely collaborate with manufacturers developing diverse automotive systems, in delivering premium memory solutions anywhere."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has started mass production of the industry's first 16-gigabit (Gb) Graphics Double Data Rate 6 (GDDR6) memory for use in advanced graphics processing for gaming devices and graphics cards as well as automotive, network and artificial intelligence systems.

"Beginning with this early production of the industry's first 16 Gb GDDR6, we will offer a comprehensive graphics DRAM line-up, with the highest performance and densities, in a very timely manner," said Jinman Han, senior vice president, Memory Product Planning & Application Engineering at Samsung Electronics. "By introducing next-generation GDDR6 products, we will strengthen our presence in the gaming and graphics card markets and accommodate the growing need for advanced graphics memory in automotive and network systems."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry's first 2nd-generation of 10-nanometer class (1y-nm), 8-gigabit (Gb) DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8 Gb DDR4 features the highest performance and energy efficiency for an 8 Gb DRAM chip, as well as the smallest dimensions.

"By developing innovative technologies in DRAM circuit design and process, we have broken through what has been a major barrier for DRAM scalability," said Gyoyoung Jin, president of Memory Business at Samsung Electronics. "Through a rapid ramp-up of the 2nd-generation 10 nm-class DRAM, we will expand our overall 10 nm-class DRAM production more aggressively, in order to accommodate strong market demand and continue to strengthen our business competitiveness."

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that its Foundry Business has commenced mass production of System-on-Chip (SoC) products built on its second generation 10-nanometer (nm) FinFET process technology, 10LPP (Low Power Plus).

10LPP process technology allows up to 10-percent higher performance or 15-percent lower power consumption compared to its first generation 10nm process technology, 10LPE (Low Power Early). As this process is derived from the already proven 10LPE technology, it offers competitive advantages by greatly reducing turn-around time from development to mass production and by providing significantly higher initial manufacturing yield. SoCs designed with 10LPP process technology will be used in digital devices scheduled to launch early next year and are expected to become more widely available throughout the year.

At a press conference held today in San Jose, Calif., Qualcomm Datacenter Technologies, Inc., a subsidiary of Qualcomm Incorporated (NASDAQ: QCOM), officially announced commercial shipment of the world's first and only 10 nanometer server processor series: the Qualcomm Centriq 2400 processor family. The Qualcomm Centriq 2400 processor family is the first high-performance Arm-based processor series designed to offer groundbreaking throughput performance for cloud workloads running in today's datacenters. Purpose built for cloud, the Qualcomm Centriq 2400 server processor family delivers exceptional performance-per-watt and performance-per dollar.

"Today's announcement is an important achievement and the culmination of more than four years of intense design, development and ecosystem enablement effort," said Anand Chandrasekher, senior vice president and general manager, Qualcomm Datacenter Technologies, Inc. "We have designed the most advanced Arm-based server processor in the world that delivers high performance coupled with the highest energy efficiency, enabling our customers to realize significant cost savings."

Intel is reportedly delaying the roll-out of its first processors built on its 10 nanometer silicon fabrication process, codenamed "Cannon Lake" for the third time since its inception. The first products based on the silicon will now come out only by late-2018. In the meantime, Intel could continue to ride on its new 8th generation Core "Coffee Lake" processors, including the augmentation of an 8-core mainstream desktop (MSDT) part in the second-half of 2018.

Notebook manufacturers are less than enthusiastic about "Cannon Lake," and plan to skip it altogether for its successor, codenamed "Ice Lake," which could come out in 2019. It won't be the first time OEMs have done this, as Intel's 5th generation Core "Broadwell" architecture was mostly skipped over in the notebook and MSDT segments.

Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, announced today that its second generation 10-nanometer (nm) FinFET process technology, 10LPP (Low Power Plus), has been qualified and is ready for production. With further enhancement in 3D FinFET structure, 10LPP allows up to 10-percent higher performance or 15-percent lower power consumption compared to the first generation 10LPE (Low-Power Early) process with the same area scaling.

Samsung was the first in the industry to begin mass production of system-on-chips (SoCs) products on 10LPE last October. The latest Samsung Galaxy S8 smartphones are powered by some of these SoCs. To meet long-term demand for the 10nm process for a wide range of customers, Samsung has started installing production equipment at its newest S3-line in Hwaseong, Korea. The S3-line is expected to be ready for production by the fourth quarter of this year.

In an announcement that's sure to stir the foundry gods, Samsung Electronics, a world leader in advanced semiconductor technology, announced today that it is expanding its advanced foundry process technology offerings with the fourth-generation 14-nanometer (nm) process (14LPU) and the third-generation 10nm process (10LPU). The announcement comes as Samsung increases investment so as to meet the requirements of next generation products, ranging from mobile and consumer electronics (Snapdragon 830 and Samsung's own Exynos 8895 come to mind) to data centers and automotives.

Ben Suh, Senior Vice President of foundry marketing at Samsung Electronics, issued the following statement: "After we announced the industry's first 10nm mass production in mid-October, we have now also expanded our lineup with new foundry offerings, 14LPU and 10LPU. Samsung is very confident with our technology definitions that provide design advantages on an aggressive process with manufacturability considerations. We have received tremendous positive market feedback and are looking forward to expanding our leadership in the advanced process technology space."