NEO Semiconductor Unveils Breakthrough 1T1C and 3T0C IGZO-Based 3D X-DRAM Technology
NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, announced today the latest advancement in its groundbreaking 3D X-DRAM technology family—the industry-first 1T1C- and 3T0C-based 3D X-DRAM cell, a transformative solution designed to deliver unprecedented density, power efficiency, and scalability for the most demanding data applications.
Built on a 3D NAND-like architecture and with proof-of-concept test chips expected in 2026, the new 1T1C and 3T0C designs combine the performance of DRAM with the manufacturability of NAND, enabling cost-effective, high-yield production with densities up to 512 Gb—a 10x improvement over conventional DRAM.
"With the introduction of the 1T1C and 3T0C 3D X-DRAM, we are redefining what's possible in memory technology," said Andy Hsu, Founder & CEO of NEO Semiconductor. "This innovation pushes past the scaling limitations of today's DRAM and positions NEO as a frontrunner in next-generation memory."
Built on a 3D NAND-like architecture and with proof-of-concept test chips expected in 2026, the new 1T1C and 3T0C designs combine the performance of DRAM with the manufacturability of NAND, enabling cost-effective, high-yield production with densities up to 512 Gb—a 10x improvement over conventional DRAM.
"With the introduction of the 1T1C and 3T0C 3D X-DRAM, we are redefining what's possible in memory technology," said Andy Hsu, Founder & CEO of NEO Semiconductor. "This innovation pushes past the scaling limitations of today's DRAM and positions NEO as a frontrunner in next-generation memory."