GEIL is yet another company to undertake a green initiative with an appropriately branded product that appeals to the environment-conscious computer enthusiast (apparently the species does exist). After a similar line of memory kits with its DDR2 segment, GEIL announced four new dual-channel DDR3 memory kits based on capacity and speeds. The two come in 4 GB (2x 2 GB) and 2 GB (2x 1 GB) capacities, and two speeds each: PC3-8500 (DDR3 1066 MHz) and PC3-10660 (DDR3 1333 MHz). The biggest USP of these kits are that they offer JEDEC standard memory timings at module voltages 10~20 percent lower than JEDEC specifications. The PC3-10660 kits runs at 9-9-9-24, while the PC3-8500 ones do 8-8-8-20, both at a mere 1.3 V. This allows GEIL to do away with a heatspreader. The modules go through GEIL's rigorous quality-assurance testings and hence carry lifetime warranties. Another part of the green initiative is the product packing, which makes use of recycled paper, a trend which is catching up. GEIL will deck up shelves with these kits shortly, so you could know the price. Model number details follow:

• GG32GB1066C8DC - 2x 1 GB, PC3-8500, 8-8-8-20, 1.3 V
• GG34GB1066C8DC - 2x 2 GB, PC3-8500, 8-8-8-20, 1.3 V
• GG32GB1333C9DC - 2x 1 GB, PC3-10660, 9-9-9-24, 1.3 V
• GG32GB1333C9DC - 2x 2 GB, PC3-10660, 9-9-9-24, 1.3 V

Silicon Power's DDR3-1333/1066 dual channel memory module packs not only support the new Intel / AMD platforms but also benefits from Intel's Core i7 Quick Path Interconnect (QPI) technology boosting bandwidths up to 6.4GB/s. It is best suited for gaming, HD multimedia, intense graphic and video editing / processing work.

Silicon Power's DDR3-1333 /1066 memory modules are in compliance with JEDEC DDR3 standards. Using the new Fly-by circuit design for efficient communications between DRAM modules and the controller; its On-DIE Termination (ODT) technology dramatically reduces unwanted reflection signals and maximizes speed. Silicon Power insists on using original memory modules and FBGA packaging for better heat dissipation and accurate data transfer. Tested 100% proof for dual channel operation, Silicon Power's dual channel DDR3 memory pack is stable, durable and highly compatible.

Samsung Electronics Co., Ltd. and Numonyx B.V. today announced they are jointly developing market specifications for Phase Change Memory (PCM) products, a next generation memory technology that will help enable makers of feature-rich handsets and mobile applications, embedded systems* and high-end computing devices to meet the increasing performance and power demands for platforms loaded with content and data. Creating common hardware and software compatibility for PCM products should help simplify designs and shorten development time, enabling manufacturers to quickly transition to high-performance, low-power PCM products from both companies.

Phase change memory produces very fast read and write speeds at lower power than conventional NOR and NAND flash memory, and allows for bit alterability normally seen in RAM.

"Our joint efforts with Numonyx will enable a more secure path for introducing PCM into the mobile environment," said SeiJin Kim, vice president, mobile memory technology planning and enabling, Samsung Electronics. "We anticipate that PCM will eventually be a major addition to our family of memory products, one that will nicely compliment our other mobile memory solutions and ultimately increase our leadership in the industry," he added.

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology, announced today that it is now sampling a SATA-interface mini-card solid state drive (SSD) with some of its customers, for use in the expanding netbook marketplace. The Samsung SATA mini-card SSD expands the use of SSDs from not only being a primary storage medium, but also as a complementary drive to boost the performance of PCs with dual drive capabilities.

Samsung's new mini-card form factor, with a highly robust interface, makes an already rugged SSD even less susceptible to damage from jarring, jostling and dropping.

JEDEC Solid State Technology Association and the SFF Committee today announced that they have entered into a Memorandum of Understanding (MOU) for the development of joint standards and publications related to solid state drives, with particular emphasis on the development of registered outlines for SSDs.

Recognizing the pressing need for comprehensive SSD standards, the partnership between JEDEC and SFF is intended to help unify the industry with respect to solid state storage standards. SSDs offer a growth opportunity to the industry, but widely adopted standards addressing a number of critical areas are seen as essential to more mainstream use.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced that it has published the first official standard for solid-state drives. MO-297 defines the dimensions, layout and connector position for 54mm x 39mm 1.8-inch solid-state drives with a standard SATA connector. Adopting a standard form factor for these types of solid state drives will enable interoperability throughout the supply chain, benefiting drive manufacturers, product designers and consumers. Conforming to a single standard will further simplify the product design process, and increase the adoption of SSD storage solutions among different segments as replacement for the traditional hard disk drives or as complementing storage options. The MO-297 registered outline also corresponds with the SFF Committee specification SFF-8156, and the Serial ATA International Organization's (SATA-IO) Revision 2.6 specification for connector dimension and tolerance. The document with the new MO-297 standard is now available for free download here, as part of JEDEC Publication 95: Registered and Standard Outlines for Solid State and Related Products.