SK Hynix Inc. today introduced the world's fastest 2Znm 8Gb (Gigabit) GDDR6 (Graphics DDR6) DRAM. The product operates with an I/O data rate of 16 Gbps (Gigabits per second) per pin, which is the industry's fastest. With a forthcoming high-end graphics card of 384-bit I/Os, this DRAM processes up to 768 GB/s (Gigabytes of graphics data per second). SK Hynix has been planning to mass produce the product for a client to release high-end graphics card by early 2018 equipped with high performance GDDR6 DRAMs.

GDDR is specialized DRAM for processing an extensive amount of graphics data quickly according to what graphics cards command in PCs, workstations, video players and high performance gaming machines. Especially, GDDR6 is a next generation graphics solution under development of standards at JEDEC, which runs twice as fast as GDDR5 having 10% lower operation voltage. As a result, it is expected to speedily substitute for GDDR5 and GDDR5X. SK Hynix has been collaborating with a core graphics chipset client to timely mass produce the GDDR6 for the upcoming market demands.

JEDEC Solid State Technology Association, responsible for creating the standards on which all of your versions of DDR memory are based upon, recently announced that development of the DDR5 memory standard is well underway, and in time for a 2018 release. The standards body said DDR5 memory will provide double the bandwidth and density versus current generation DDR4. along with delivering improved channel efficiency. Though considering the rate at which DDR4 prices have been increasing as of late, we really should fell a little uneasy at what this new memory standard's adoption will entail.

The current highest base clock that JEDEC allows in their DDR4 memory standard before "overclocking" takes over is DDR4-2400 - with timings ranging from 15~18 for the CAS latency, as well as tRCD, and tRP. And if, as JEDEC says, DDR5 is to be "twice as fast", that could imply that we could end up seeing DDR5-4800. Consider that for a moment: DDR4 kits today only go so far as DDR4-4266, and those are so few and far between that they'll cost you a singular kidney.

Rambus Inc. today announced the availability of its High Bandwidth Memory (HBM) Gen2 PHY developed for GLOBALFOUNDRIES high-performance FX-14 ASIC Platform. Built on the GLOBALFOUNDRIES 14nm FinFET (14LPP) process technology, the Rambus HBM PHY is aimed at networking and data center applications and designed for systems that require low latency and high bandwidth memory. This PHY is fully compliant with the JEDEC HBM2 standard and supports data rates up to 2000 Mbps per data pin, enabling a total bandwidth of 256 GB/s to meet the needs of today's most data-intensive tasks.

"Data center needs are continuously changing and we are at the forefront of delivering memory interface technology designed to meet today's most demanding workloads," said Luc Seraphin, senior vice president and general manager of the Rambus Memory and Interfaces division. "Through our collaboration with GLOBALFOUNDRIES, we are delivering a comprehensive and robust solution for high-performance data center and networking applications. Our HBM offering will allow data center solution developers to bring high performance memory closer to the CPU, thus reducing latency and improving the system throughput."

Innodisk, the service driven flash and DRAM provider, introduces the new DDR4 2666 memory modules designed for server applications on the upcoming Purley platform that Intel intends to release in 2017. The DDR4 2666 RDIMM is equipped with a Samsung chip which is designed with a new system circuit architecture to deliver even higher performance with lower power consumption.

"For years, Innodisk has been dedicated to developing and manufacturing industrial grade memory modules, and we have never stopped introducing industry leading products," said Samson Chang, Vice President of Embedded DRAM Business Unit of Innodisk. "We are proud to introduce the industry's first DDR4 RDIMM with an initial speed 2666 MT/s. It will optimize the Purley platform and maximize its performance. Innodisk will continue to develop more advanced product specifications in the future, allowing us to have the most complete product line amongst our competitors. Our goal is to support our customers various needs and lead the industrial systems upgrade."

Toshiba America Electronic Components, Inc. (TAEC) has enhanced its lineup of managed NAND devices with the addition of new Embedded Multimedia Card (e-MMC) and Universal Flash Storage (UFS) embedded memory solutions. Featuring enhanced integrated controller technologies, the new 'Supreme+' e-MMC (JEDEC ver. 5.1) and UFS (JEDEC ver. 2.1) offerings deliver significant read and write speed improvements to demanding applications.

In contrast to raw NAND flash memory solutions, e-MMC and UFS devices integrate NAND flash memory and a controller chip in a single package. This saves space and relieves host processors of the burden of key memory management functions including bad block management, error correction, wear leveling, and garbage collection. As a result, e-MMC and UFS devices simplify design when compared to standalone memory ICs with a standard NAND flash interface.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today unveiled the industry's first removable memory cards based on the JEDEC Universal Flash Storage (UFS) 1.0 Card Extension Standard*, for use in high-resolution mobile shooting devices such as DSLRs, 3D VR cameras, action cams and drones. Coming in a wide range of storage capacities including 256, 128, 64 and 32 gigabyte (GB), Samsung's UFS cards are expected to bring a significant performance boost to the external memory storage market, allowing much more satisfying multimedia experiences.

"Our new 256GB UFS card will provide an ideal user experience for digitally-minded consumers and lead the industry in establishing the most competitive memory card solution," said Jung-bae Lee, senior vice president, Memory Product Planning & Application Engineering, Samsung Electronics "By launching our new high-capacity, high-performance UFS card line-up, we are changing the growth paradigm of the memory card market to prioritize performance and user convenience above all."

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of several key updates to the Universal Flash Storage (UFS) family of standards. These include JESD220C UFS version 2.1, JESD223C UFSHCI version 2.1, JESD220-1A UFS UME version 1.1 and JESD223-1A UFSHCI UME version 1.1.

Developed for mobile applications and computing systems requiring high performance with low power consumption, the new UFS updates offer key improvements over earlier versions which will provide data security through the use of inline cryptography between the SoC and UFS Storage device. All four updated standards are available for free download from the JEDEC website.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD220-2 Universal Flash Storage (UFS) Card Extension Standard. The new removable memory card standard standardizes functionality that aligns with the popular UFS embedded device standard. JESD220-2 is available for free download from the JEDEC website.

UFS is a high performance interface designed for use in computing and mobile systems such as smart phones and tablets where power consumption needs to be minimized. Its high speed serial interface and optimized protocol enable significant improvements in throughput and mobile system performance. The new UFS card standard provides a leading-edge removable storage solution while maintaining sequential and random IOPS performance that is critical for future mobile markets. Even using a single lane the UFS 1.0 card offers 600 MB/s interface speed in both directions and a state-of-the-art queuing mechanism to further increase system throughput.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD232 Graphics Double Data Rate (GDDR5X) SGRAM. Available for free download from the JEDEC website, the new memory standard is designed to satisfy the increasing need for more memory bandwidth in graphics, gaming, compute, and networking applications.

Derived from the widely adopted GDDR5 SGRAM JEDEC standard, GDDR5X specifies key elements related to the design and operability of memory chips for applications requiring very high memory bandwidth. With the intent to address the needs of high-performance applications demanding ever higher data rates, GDDR5X is targeting data rates of 10 to 14 Gb/s, a 2X increase over GDDR5. In order to allow a smooth transition from GDDR5, GDDR5X utilizes the same, proven pseudo open drain (POD) signaling as GDDR5.

"GDDR5X represents a significant leap forward for high end GPU design," said Mian Quddus, JEDEC Board of Directors Chairman. "Its performance improvements over the prior standard will help enable the next generation of graphics and other high-performance applications."

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of an update to JESD235 High Bandwidth Memory (HBM) DRAM standard. HBM DRAM is used in Graphics, High Performance Computing, Server, Networking and Client applications where peak bandwidth, bandwidth per watt, and capacity per area are valued metrics to a solution's success in the market. The standard was developed and updated with support from leading GPU and CPU developers to extend the system bandwidth growth curve beyond levels supported by traditional discrete packaged memory. JESD235A is available for free download from the JEDEC website.

JESD235A leverages Wide I/O and TSV technologies to support up to 8 GB per device at speeds up to 256 GB/s. This bandwidth is delivered across a 1024-bit wide device interface that is divided into 8 independent channels on each DRAM stack. The standard supports 2-high, 4-high and 8-high TSV stacks of DRAM at full bandwidth to allow systems flexibility on capacity requirements from 1 GB - 8 GB per stack.

Team Group Inc., the world's leading memory brand, today launched the gaming laptop upgrade memory-Neptune. The global PC market is experiencing a stagnation at this point of time. Gaming has become the essential key to push forward the sustainable development of PC/NB. In this vigorously growing market, Team Group has built the gaming memory Neptune specifically for gamers. With two frequencies DDR3 2133/1600, it ensures both performance and compatibility, providing gamers laptop upgrade and excellent solutions for customized Steam Machine.

Instead of using traditional JEDEC standard, Team Group's all new Neptune gaming laptop memory will go further into the area of gaming with previous experience in developing overclocking memory. DDR3 2133/1600 SO-DIMM is not only created for gaming laptops, but also making it possible to minimize high performance PC. No matter you want to play an epic time traveling adventure game, or battle in the thrilling frontline of a war game, Neptune is able to offer infinite possibilities for upgrading gaming performance under the existing platform.

ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash application products, today launched Premier DDR4 2133 SO-DIMM memory, optimized for best performance with new Intel Skylake processors and their chipsets, as well as the Haswell-E platform. ADATA is keen to expand DDR4 adoption and encourage the move to a new generation of DRAM on notebooks, as DDR4 offers outstanding performance and greater power efficiency, assured by meticulous ADATA testing and backed by a limited lifetime warranty.

ADATA Premier DDR4 2133 SO-DIMM modules are offered in 4GB and 8GB densities, both clocked to a high speed 2133 MHz. This represents a performance boost over DDR3, which on notebooks has typically been clocked at 1333 MHz or 1600 MHz. DDR4 therefore brings a new phase in computer memory performance and just as with desktop PCs, ADATA believes notebook users stand to gain much by choosing DDR4. This applies to new notebooks that ship with DDR4 and importantly as an upgrade option for notebooks that are compatible with DDR4 but purchased with DDR3 for cost reasons. ADATA encourages users to upgrade to DDR4 to enjoy the benefits of this essential technological advancement in personal computing.

Super Talent Technology, a leading manufacturer of NAND Flash storage solutions, announces its very low profile single rank DDR4 4GB ECC 2133 Mhz UDIMM modules. Super Talents single rank 4GB DDR4 ECC UDIMMs target environments where space is vital and low clearance modules are required. Small form factor PCs can take advantage of the extra space saved with these parts. Fewer raw materials are used and less waste is produced without any tradeoffs in functionality or price with these modules.

Very Low Profile form factor DIMMS were developed with the arrival of blade servers. Due to having limited space, standard height modules were unable to fit in the enclosures. Improved airflow, reduced thermal impact, and lowered power costs are all advantages when selecting VLP DIMMs. All modules are quality tested in house and are built to JEDEC standard specifications with high quality components. DDR4 offers modules up to double the density and speed of previous generations DDR3 DRAM while using up to 20% less power which makes it a highly efficient solution for enterprise workloads.

We are bang in the middle of an inflection point where the latest generation of CPUs, GPUs, motherboards, memory, displays, and software (Windows 10) just launched. To help our readers wanting to save big on their first gaming PC builds [and because the news is slow these days], TechPowerUp brings to you its Builder's Digest series of guides, on which components we would choose, to build a gaming or media PC from the ground up, at a given price-point.

In this episode, we're trying to build the best gaming PC possible, under $1,700. Our definition of "best" includes not just performance, but also energy-efficiency and noise. $1,700 is a great budget to get building your first serious gaming PC from scratch. Your only semblance of a PC right now is probably a notebook you take to school, and so you need to buy everything that makes up a desktop. Here's how TechPowerUp will spend that money.

Innodisk, the service-driven flash and DRAM provider, announces higher capacity 16GB versions of its DDR4 embedded and server unbuffered DRAM series. These 2133MHz UDIMMs and SODIMMS now come in industry-leading 16GB capacities, allowing more memory to be installed within space constrained embedded systems, industrial PCs and servers. Offering higher performance with lower power consumption compared to DDR3, the new DRAM modules have ECC available for reliability, as well as industrial strength features from Innodisk such as 30µ" Gold Finger connectors, thermal sensors, and protective conformal coatings. The new 16GB modules make Innodisk's range of DDR4 products the most complete line of embedded and server DDR4 memory on the market.

"16GB is the highest capacity unbuffered DDR4 module available on the market," said Samson Chang, Vice President of Embedded DRAM Business Unit of Innodisk. "We're proud that Innodisk is able to provide this memory capacity while bringing the performance and low power benefits of DDR4 to the embedded and server markets. In addition, we're bringing extra value to our industrial customers with Innodisk features like onboard thermal sensors and protective coatings.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced that its JC-64.8 Subcommittee for Solid State Drives is currently engaged in an effort to update the JESD218 standard for Solid State Drive Requirements and Endurance Test Method. Originally published in September 2010 and revised in February 2011, the new update to JESD218 will primarily address improvements in test methodologies to better reflect product expectations, reduce testing options to remove unused methods, and add clarifications to improve the readability and understanding of test methods and artifacts caused by accelerated testing. Additional topics are discussed when brought up by task group participants. JEDEC strongly encourages all interested parties to contact the JEDEC office at 703-907-7560 to become involved with SSD standards development.

JESD218 Solid-State Drive Requirements and Endurance Test Method defines the conditions of use and corresponding endurance verification requirements for both Client and Enterprise application classes, as well as providing a standard endurance rating. Workloads are described in a separate, related document: JESD219 Solid-State Drive Endurance Workloads. Both JESD218 and JESD219 are available for free download from the JEDEC website.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, has announced that its JC-45 Committee has approved the first standards for support of "hybrid" DDR4 memory modules which are defined as modules that plug into standard dual in-line memory module (DIMM) sockets and appear like a DDR4 SDRAM to the system controller, yet contain non-volatile (NV) memories such as NAND Flash on the module. These hybrid module families are referred to as Non-Volatile DIMMs, or NVDIMMs, and they may share the memory channel with other standard DDR4 DIMMs. Publication is expected later this year.

"The introduction of hybrid memory modules into system platform architectures adds new levels of functionality to the computer memory hierarchy," said Mian Quddus, Chairman of JEDEC's JC-45 Committee for Dynamic Random Access Memory (DRAM) Modules. He added, "Non-volatile memory may be used for data persistence, mass storage, and the door is now opened for innovative new applications using the high speed of the DRAM channel. NAND Flash is the first non-volatile memory to be incorporated into the channel; however, the industry is poised for other memory types to be included as well. The framework established by JEDEC is flexible enough to allow for a variety of memories to be included under the 'hybrid' umbrella."

Back in 2008, when it looked like NVIDIA owned the GPU market, and AMD seemed lagging behind on the performance and efficiency game, the company sprung a surprise. The company's RV770 silicon, the first GPU to implement GDDR5 memory, trounced NVIDIA's big and inefficient GeForce GTX 200 series, and threw AMD back in the game. GDDR5 helped the company double the memory bandwidth, with lower pin- and memory-chip counts, letting the company and its partners build graphics cards with fewer components, and earn great margins, which the company invested in development of its even better HD 5000 series, that pushed NVIDIA with its comical GeForce GTX 480, to hit its lowest ever in market-share. Could AMD be looking at a similar turnaround this summer?

Since the introduction of its Graphics CoreNext architecture in 2012, AMD has been rather laxed in its product development cycle. The company has come out with a new high-end silicon every 18-24 months, and adopted a strategy of cascading re-branding. The introduction of each new high-end silicon would relegate the existing high-end silicon to the performance segment re-branded, and the existing performance-segment silicon to mid-range, re-branded. While the company could lay out its upcoming Radeon R9 series much in the same way, with the introduction of essentially just one new silicon, "Fiji," it could just prove enough for the company. Much like RV770, "Fiji" is about to bring something that could prove to be a very big feature to the consumer graphics market, stacked high-bandwidth memory (HBM).

Transcend Information, Inc. (Transcend), a leading manufacturer of industrial-grade products, is proud to announce the launch of the new EMC210 e.MMC (embedded Multi-Media Card) storage solution. The MLC-based EMC210 features simplified interface design, enhanced storage capacities, upgraded performance and a set of comprehensive functions. The small factor e.MMC is an embedded storage ideal for mobile devices, embedded devices and industrial applications, and is compliant with JEDEC (Joint Electron Device Engineering Council) version 4.51 standards.

The e.MMC is comprised of the NAND Flash and the Flash Memory Controller in a 153-ball BGA package. By integrating the controller into the flash memory package, the e.MMC supports the MMC interface and streamlines the development of new products that comply with a simpler set of industry-standard specifications for memory management. Transcend's e.MMC solution provides greater flexibility with interface voltage of either 1.65~1.95V or 2.7V~3.6V. Consequently, manufacturers can benefit from a more efficient design process, lower costs, and reduced time-to-market for end products.

Toshiba Corporation's Semiconductor & Storage Products Company today announced the launch of JEDEC e∙MMC Version 5.1 compliant embedded NAND flash memory products supporting "command queuing" and "secure write protection". The new products integrate NAND chips fabricated with 15nm process technology and are designed for application in a wide range of digital consumer products, including smartphones, tablets and wearable devices. Sample shipment of the 16GB and 64GB products start today, with 32GB and 128GB products to follow.

The new products integrate NAND chips fabricated with Toshiba's cutting-edge 15nm generation process technology with a controller to manage basic control functions for NAND applications in a single package. In October 2014, Toshiba launched the industry's first e∙MMC products supporting all mandatory features of JEDEC e∙MMC Version 5.1, which was officially issued by JEDEC on February 24, 2015. The new additions to the line-up support two optional features of e∙MMC Version 5.1, "command queuing" and "secure write protection."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it is now mass producing the industry's first 128-gigabyte (GB) ultra-fast embedded memory based on the much-anticipated Universal Flash Storage (UFS) 2.0 standard for next-generation flagship smartphones. The new embedded memory's UFS 2.0 interface is the most advanced JEDEC-compliant, next-generation flash memory storage specification in the world.

"With our mass production of ultra-fast UFS memory of the industry's highest capacity, we are making a significant contribution to enable a more advanced mobile experience for consumers," said Jee-ho Baek, Senior Vice President of Memory Marketing, Samsung Electronics. "In the future, we will increase the proportion of high-capacity memory solutions, in leading the continued growth of the premium memory market."

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD84-B51: Embedded MultiMediaCard (e.MMC), Electrical Standard (5.1). e.MMC v5.1 defines new features and updates for this embedded mass-storage flash memory that is widely used in smartphones and other mobile devices. Intended to facilitate an enhanced end user experience, the new version of e.MMC offers command queueing for the first time, and also defines important security updates. JESD84-B51 is available for free download from the JEDEC website.

The new revision of the standard defines e.MMC Command Queueing, which supports the optimized execution of commands within the device, versus the single thread protocol defined in prior versions of the standard. Command Queueing will enable the device to analyze commands before executing them, thereby maximizing effectiveness of the e.MMC memory storage. This will result in a positive effect on random read performance and read latency, thereby improving the end user experience.

SMART Modular Technologies, Inc., a leading designer, manufacturer and supplier of specialty memory and storage solutions, including memory modules, flash memory cards and other memory and solid state storage products, today announced the expansion of its NVDIMM product line with its new 8GB and 16GB DDR4 NVDIMMs available in a single rank, four bit configuration. SMART's full lineup of DDR4 NVDIMMs now include two configurations; a single rank eight bit configuration in 4GB and 8GB densities, and the new 8GB and 16GB options. The new NVDIMMs are targeted for server and storage applications to improve performance.

NVDIMMs transform main DRAM memory into persistent memory resulting in higher performing servers by allowing big data, transaction logs, and other latency and performance-sensitive data to be accessed at DRAM speeds without the risk of data loss. Rather than reading and writing big data or transaction logs to traditional storage media such as SATA SSDs, PCIe NVMe SSDs, or HDDs, they can be written to and read from main memory without the risk of data being lost due to any sudden power loss (SPL) event. Server performance in terms of lower latency, higher IOPS, and greater endurance all increase dramatically with the use of SMART's NVDIMMs.

Transcend Information, Inc. (Transcend), a leading manufacturer of industrial-grade products, is proud to announce the launch of the DDR4 memory module series. The series includes DDR4 2133 MHz UDIMMs, RDIMMs, ECC-DIMMs and ECC SO-DIMMs, which are fully compatible with the latest Intel Xeon E5-2600 v3 server family processor, Haswell-E CPU with X99 chipset and micro servers. Transcend's DDR4 series boasts superior performance, 1.2V ultra-low power consumption, and increased reliability. All these features make it perfect for cloud computing, virtualization, and high-performance computing technologies.

Transcend's DDR4 memory modules are constructed with top-quality DRAM chips that deliver stable performance and durability. With advanced DDR4 technologies, Transcend's DDR4 memory modules utilize higher density components, allowing capacity options ranging from 4GB to 32GB. Offering high speed transmission of 2133MHz and up to 17GB/s of memory bandwidth, Transcend's DDR4 DIMMs comprehensively promote the system performance.

SMART Modular Technologies, Inc., a leading designer, manufacturer and supplier of specialty memory and storage solutions, including memory modules, flash memory cards and other memory and solid state storage products, has announced today the launch of its DDR4 Mini-DIMM, one of the industry's first Mini-DIMM form factor utilizing next generation DDR4 technology.

SMART's initial lineup of DDR4-2133 Mini-DIMMs includes 8GB and 16GB VLP Mini-UDIMM along with 8GB and 16GB standard height Mini-RDIMMs, all of which comply with JEDEC 288-pin form factor and pin-out standards. Today, Mini-DIMMs are widely used across many application segments including networking, telecom, industrial, computing and storage by OEMs who are looking to save board space or source as an alternative to SO-DIMMs. The attractiveness of Mini-DIMMs is that they are versatile; it's a small form factor offered in high densities operating at high data transfer rates. For OEMs currently using DDR3 Mini-DIMMs, SMART is pleased to offer a migration path to DDR4.