Montage Technology, a leading data processing and interconnect IC design company, today announced that it has delivered the world's first Compute Express Link (CXL ) Memory eXpander Controller (MXC). The device is designed to be used in Add-in Cards (AIC), Backplanes or EDSFF memory modules to enable significant scaling of memory capacity and bandwidth for data-intensive applications such as high-performance computing (HPC) and artificial intelligence (AI). The MXC is a Type 3 CXL DRAM memory controller. The MXC supports and is compliant with both DDR4 & DDR5 JEDEC standards. It is also designed to the CXL 2.0 specification and supports PCIe 5.0 specification speeds. The MXC provides high-bandwidth and low-latency interconnect between the CPU and the CXL-based devices, allowing them to share memory for higher performance, reduced software stack complexity, and lower data center TCO.

Montage Technology's President, Stephen Tai said, "CXL is a key technology that enables innovative ways to do memory expansion and pooling which will play an important role in next-generation server platforms. I'm very excited that Montage is the first company in the industry to successfully deliver the MXC chip, which signals we are making a critical step towards advancing the CXL interconnect technology to the memory market." CXL Consortium's President, Siamak Tavallaei said, "The CXL Consortium is excited to see continued CXL specification adoption to enable technologies and solutions such as the CXL DRAM Memory eXpander Controller." Montage Technology is working closely with industry-leading memory manufacturers to deliver advanced memory products based on the CXL MXC and help develop a robust memory ecosystem around CXL.

Samsung has announced the implementation of the latest JEDEC standard specification with the adoption of UFS (Universal Flash Storage) standard 4.0. The new standard offers a number of improvements over the previous UFS 3.1 specification related to either performance or power savings. The new standard increases speeds of up to 23.2 Gbps per lane, double that of the previous UFS 3.1 standard. Additionally, UFS 4.0 unlocks sequential read speeds as high as 6.0 MB/s per mA - a 46% improvement over the previous spec, promising decreased battery drain even as workload time is reduced.

Samsung's UFS 4.0 implementation will leverage the company's 7th Gen V-NAND alongside a proprietary controller, which should ultimately enable speeds of up to 4,200 MB/s. Sequential write speeds are nothing to scoff at either, promising up to 2,800 MB/s. The improved performance doesn't translate to increased package sizes, however, as UFS 4.0 will be distributed in compact packages with a maximum dimension of 11 mm x 13 mm x 1 mm for more effective space utilization and design convenience - with capacities reaching the 1 TB per package. Mass production is expected in 3Q2022. Samsung expects its new UFS 4.0-based products to deliver new experiences with increased data throughput of 5G smartphones, future automotive applications, and even AR and VR.

SMART Modular Technologies, Inc. ("SMART"), a division of SGH and a global leader in memory solutions, solid-state drive (SSD) and hybrid storage products announces the next generation of its DuraFlash ME2 family of SATA SSD products, which includes industry-standard M.2 2242, M.2 2280, mSATA, Slim SATA and 2.5" form factors. These SSDs are available in both industrial and commercial temperature grades and have versions that implement SMART's SafeDATA power-loss, data-protection technology for graceful handling of power fluctuations and sudden power loss events.

The new ME2 SSDs incorporate the latest generation 3D NAND-technology and SMART Modular's proprietary NVMSentry firmware to deliver high performance SSD products with endurance up to one drive writes per day (DWPD) for five years using JEDEC JESD219A enterprise endurance workload. The new NAND device offers better cost per bit over previous 64-layer and 96-layer NAND generations without sacrificing performance and reliability.

AMD's upcoming Socket AM5 Ryzen 7000-series "Raphael" desktop processors will ship with native support for DDR5-5200 memory speed, according to a marketing slide by memory maker Apacer (which also owns the overclocking memory brand ZADAK). The "Zen 4" based desktop processors will feature a dual-channel DDR5 (4 sub-channel) interface, just like the 12th Gen Core "Alder Lake," but with no backwards compatibility with DDR4.

AMD already stated that Ryzen 7000 processors have a design focus on memory overclocking capabilities, including AMD EXPO, a custom memory module SPD extension standard rivaling Intel XMP 3.0, which will come with fine-grained settings specific to the AMD memory controller architecture. Until now, AMD relied on A-XMP, a motherboard vendor-enabled feature based in the UEFI firmware setup program, which translates Intel XMP SPD profiles of memory modules into AMD-approximate settings.

TEAMGROUP, has announced today the upgrade of TEAMGROUP ELITE U-DIMM DDR5 Standard Memory in response to the evolution of future DDR5 memory specifications and development trends. Developed from TEAMGROUP's outstanding R&D capabilities and excellent product quality, the TEAMGROUP ELITE U-DIMM DDR5 Standard Memory complies with JEDEC standards and supports high-performance specifications of frequency 5600 MHz and 1.1 V voltage. The TEAMGROUP ELITE U-DIMM DDR5 Standard Memory has also been sent to major motherboard manufacturers for verification. As the world welcomes the advent of the DDR5 era, TEAMGROUP will continue to launch memory products with comprehensive compatibility and upgraded specifications.

TEAMGROUP is making an early play in the field of DDR5s. Last year, the company launched the TEAMGROUP ELITE U-DIMM DDR5 4800 MHz 1.1 V Standard Memory ahead of the industry and is now announcing an increased frequency from 4,800 MHz to 5,600 MHz with the same 1.1 V voltage, ensuring users can enjoy high-performance experiences while still conserving energy. The latest TEAMGROUP ELITE U-DIMM DDR5 Standard Memory will also be available in different storage capacities, including 2X8GB, 2X16GB, and 2X32GB, to deliver smooth multi-tasking and an outstanding product that is stable, high-performance, and energy-efficient.

Sabrent Rocket 8 GB, 16 GB, and 32 GB DDR4 SO-DIMM 3200 MHz Memory Module for laptop, Ultrabook, and mini-PC. Expand your horizons with Sabrent Rocket DDR4 memory. Your favorite SSD company wants to make sure the rest of your system feels responsive, too. We provide affordable, high-capacity DRAM options to make sure you never feel left behind. Our passion for memory matches your desire to exceed the limits of your imagination. Our design is tight and cool, making sure never to get in the way of your dreams.

Running out of memory? Providing up to 32 GB of memory per stick, Sabrent's Rocket DDR4 has all your needs covered. You're just a single upgrade away from a lag-free experience. Don't let your lack of memory slow you down - realize the potential to multi-task like never before. Our DRAM will improve your productivity and your gaming experience, all at the same time.

ATP Electronics, the global leader in specialized storage and memory solutions, has introduced its latest line of e.MMC devices built on 3D triple level cell (TLC) NAND. Using a new die package, the E750Pi/Pc and E650Si/Sc Series offer long-life performance, optimized power consumption and customizable configuration options. ATP's new E750Pi/Pc Series e.MMC offerings are built with 3D TLC NAND flash but are configured as pseudo SLC (pSLC) to offer endurance on par with SLC NAND, while E650Si/Sc Series in native TLC has near-MLC endurance.

The E750Pi and E650Si Series are industrial temperature-operable (-40°C to 85°C), making them ideal for deployment in scenarios with extreme thermal challenges and harsh environments, while E750Pc and E650Sc support -25°C to 85°C operating temperatures for applications with non-critical thermal requirements.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of the next version of its High Bandwidth Memory (HBM) DRAM standard: JESD238 HBM3, available for download from the JEDEC website. HBM3 is an innovative approach to raising the data processing rate used in applications where higher bandwidth, lower power consumption and capacity per area are essential to a solution's market success, including graphics processing and high-performance computing and servers.

AMD is preparing a round of updates to its desktop Radeon RX 6000 series in the wake of RTX 30-series models by NVIDIA, according to Greymon55, a reliable source with GPU rumors. The company could be leveraging faster 18 Gbps GDDR6 memory chips for the task. This wouldn't be the first RX 6000 series products with 18 Gbps memory, as the liquid-cooled MBA (made-by-AMD) RX 6900 XT that's exclusive to OEMs, already comes with 18 Gbps memory clocks.

Mass-production of JEDEC-standard GDDR6 memory chips with data-rates as high as 20 Gbps and 24 Gbps by Samsung is expected to get underway later this year. The company is already sampling these chips, and it's likely that they may feature in the next round of product-stack updates by AMD and NVIDIA. In the run up to its next-gen RDNA3 graphics architecture, AMD is rumored to be working on a refresh of RDNA2 on the new TSMC N6 (6 nm) foundry node that it already leverages for the entry-level "Navi 24" ASIC. This is expected to open up headroom to dial up engine clocks, and possibly support faster memory. As for this latest refresh with 18 Gbps memory, if AMD's naming convention for its mobile RX 6850M is anything to go by, the new SKUs could feature a similar "xx50" model numbering.

Since 2020, data centers have seen additional development opportunities driven by new infrastructure. For this reason, DDRs have been developed to become faster and more efficient. On July 14, 2020, JEDEC released the DDR5 SDRAM standard, marking the industry-wide transition to DDR5 server dual in-line memory modules (DIMMs). In China, mainstream manufacturers are gradually focusing on DDR5, striving to promote its widespread commercialization. DDR5 brings with it a series of crucial improvements to help empower next-gen servers with better performance and lower power consumption.

With 22 years of experience in the storage industry, Longsys is constantly accumulating industrial experience while remaining centered on R&D technology. As the first company in China to do so, it has made multiple DDR5 test data items publicly available. FORESEE, the industrial storage brand of Longsys, has recently launched commercial DDR5 U-DIMM, available in 16 GB and 32 GB options.

Apacer's consumer and gaming DDR5 memory modules are finally available! The DDR5-4800 delivers 16 GB of DRAM at 4800 MHz and draws just 1.1 V. That leaves DDR4 modules far behind in the rear-view mirror. Performance, capacity, stability and power efficiency are all taken to the next level. In addition to the standard DDR5 memory module, Apacer is launching a NOX DDR5 gaming memory module. This will provide gamers with extremely stable overclocking capabilities with a single click. Power consumption management is also upgraded in DDR5.

Apacer's DDR5-4800 modules are compliant with the JEDEC standard. And their operating frequency of 4800 MHz is a 50% increase in bandwidth compared to the standard DDR4 upper frequency limit of 3200 MHz.

Samsung has started sampling high-speed 24 Gbps-rated GDDR6 memory chips. Just to be clear, these are standard GDDR6 chips built to JEDEC-specifications, and not GDDR6X, a derivative standard co-developed by NVIDIA and Micron leveraging PAM4 signaling. The 24 Gbps chips by Samsung can be used by both NVIDIA and AMD, if their GPU designs can handle the data-rates. The specific part number for the chip is "K4ZAF325BC-SC24." This chip has a density of 16 Gb (2 GB), which means 8 of these make up 16 GB across a 256-bit wide memory bus, and 12 of these make 24 GB across a 384-bit bus.

At 24 Gbps, these chips offer 50% more bandwidth than 16 Gbps, and 71% more than 14 Gbps. A hypothetical 6 nm refresh of the "Navi 21" paired with these chips, would hence have 768 GB/s of memory bandwidth on top of its Infinity Cache bandwidth, compared to 512 GB/s on the current Radeon RX 6800 XT. Since the chip is sampling, it's likely that both AMD and NVIDIA have their hands on it. There's no word on when the chip hits mass-production, but this could definitely happen within 2022.

KINGMAX, has introduced the latest DDR5 4800 MHz 16 GB desktop memory. Fully compatible with Intel's 12th-generation Alder Lake and Z690 platform, it has secured the QVL certification of a good number of main stream motherboard manufacturers, thereby attesting to its platform compatibility essential for this new era for PCs already here.

Compared with its predecessors, DDR5 4800 MHz memory stands out as an utter upgrade in overall performance. In terms of speed, DDR5 starts with a base frequency of 4800 MHz and its bandwidth of 38.4 MB/s is at least 1.5 times faster than the maximum of 25.6 MB/s offered by its DDR4 3200 MHz peers. Coupled with dual sub-channels (32-bit) that run independently, data processing becomes substantially more efficient as the memory controller enjoys a much lower data access latency.

Micron Technology, Inc. announced today that MediaTek Inc. has validated Micron's low-power double data rate 5X (LPDDR5X) DRAM for MediaTek's new Dimensity 9000 5G flagship chipset for smartphones. Micron is the first semiconductor company to sample and validate this fastest, most advanced mobile memory in the industry and has shipped the first batch of samples of LPDDR5X built on its first-to-market 1α (1-alpha) node. Designed for high-end and flagship smartphones, Micron's LPDDR5X allows the smartphone ecosystem to unlock the next wave of data-intensive applications powered by artificial intelligence (AI) and 5G innovation.

The market delivery and validation of Micron's industry-leading 1α-based LPDDR5X solidifies its product innovation and leadership in the mobile ecosystem, following industry-first launches for LPDDR5, 1α-based LPDDR4X, 176-layer NAND-based UFS 3.1 and uMCP5 solutions. This most recent milestone follows quickly on the heels of JEDEC's July release of the LPDDR5X extension to LPDDR5, created to offer higher bandwidth and memory speed for enhanced 5G communication and performance while still conserving power. Micron has validated samples supporting data rates up to 7.5 Gb/s, with samples supporting data rates up to 8.533 Gb/s to follow. Peak LPDDR5X speeds of 8.533 Gb/s deliver up to 33% faster performance than previous-generation LPDDR5.

"Innovating cutting-edge smartphone experiences requires memory technology built to address the massive bandwidth demands of the mobile market," said Raj Talluri, senior vice president and general manager of Micron's Mobile Business Unit. "Our collaboration with MediaTek to validate the world's most advanced mobile memory empowers the ecosystem to deliver the next wave of rich mobile features enhanced by 5G and AI."

During Samsung's Tech Day 2021, the company presented some interesting insights about the future of system memory technologies and how it plans to execute its production. Starting with the latest DDR5 standard, the company intends to follow JEDEC documents and offer some overclocking modules that surpass the specification advised by JEDEC. While the DDR5 standard specifies memory modules with 6,400 MT/s, Samsung will develop modules capable of overclocking up to 8,400 MT/s. These are not yet confirmed as they are still in the development phase. However, we can expect to see them in the later life of DDR5 memory.

The company also talked about the DDR6 standard, which is supposedly twice as fast as DDR5. The new DDR6 standard is still in early development, and all we know so far is that the number of memory channels per module is seeing a twofold increase over DDR5 to four channels. The number of memory banks also increases to 64. In addition to DDR6 for desktop and server use cases, the company is also working on Low Power DDR6 (LPDDR6) for mobile applications. While the company's LPDDR5 memory goes into volume production using the 1a-nm process at the beginning of 2022, the LPDDR6 is still in early development. The base speed for DDR6 modules will allegedly arrive at 12,800 MT/s, while overclocking modules will join the party at up to 17,000 MT/s. Mobile-oriented LPDDR6 version is also supposed to come with up to 17,000 MT/s speeds.

PNY today announces specifications and availability for its upcoming Desktop Performance and XLR8 Gaming DDR5 memory products. The three models include the overclocked XLR8 Gaming MAKO and MAKO RGB models, running at 5600 MHz and a CAS latency of 36, as well as the PNY Performance model that follows JEDEC standards.

The XLR8 Gaming MAKO and MAKO RGB modules have been designed to meet the needs of gamers and enthusiasts. The designs for both modules feature aluminium heat spreaders with elements inspired by the powerful, fast and aggressive Mako shark from which they get their name. An XLR8 logo and GAMING text is proudly emblazoned on the side of the module and silver angled relief lines are machined into the heatspreader to reflect other components' lighting and provide unmatched flair and style.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced publication of the JESD79-5A DDR5 SDRAM standard. This update to the JEDEC DDR5 SDRAM standard includes features designed to enhance reliability and performance in a wide range of applications involving client systems and high-performance servers. JESD79-5A is now available for download from the JEDEC website.

Added features designed to meet industry demand for improved system reliability include bounded fault error-correction support, Soft Post-Package Repair (sPPR) undo and lock, Memory Built-In Self-Test Post Package Repair (MBIST and mPPR), Adaptive RFM, and an MR4 extension. JESD79-5A expands the timing definition and transfer speed of DDR5 up to 6400 MT/s for DRAM core timings and 5600 MT/s for IO AC timings to enable the industry to build an ecosystem up to 5600 MT/s. The nomenclature for core timing parameters and their respective definitions has been revamped to closely align with the upcoming JEDEC JESD400-5 DDR5 Serial Presence Detect (SPD) Contents V1.0 standard. The document can be accessed here.

ADATA Technology, a manufacturer of high-performance DRAM modules, NAND Flash products, mobile accessories, gaming products, electric power trains, and industrial solutions today announces the ADATA DDR5-4800, a next-generation DDR5 memory module that is capable of reaching frequencies of up to 4800MT/s and comes with up to 32 GB of capacity. In addition, ADATA has worked with six major motherboard brands, including AORUS, ASROCK, ASUS, GIGABYTE, MSI and ROG to ensure optimal performance and compatibility across a wide range of motherboards.

"Through our strong R&D capabilities and close partnerships with the world's leading motherboard makers, we are committed to offering memory modules with next-generation performance, higher capacities, and enhanced stability," said Nick Dai, Senior Manager of DRAM Products at ADATA. "In the coming months, we will continue to launch a diverse array of DDR5 products to meet the different needs of creators, gamers, and other users."

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD233: XFM Embedded and Removable Memory Device (XFMD) standard. XFMD (XFM stands for Crossover Flash Memory) is a new universal data storage media providing an NVMe over PCI Express interface in a small, thin form factor. The device is designed to bring replaceable storage to devices typically soldered down in IoT devices and embedded applications. Developed by JEDEC's JC-64.1 Subcommittee for Electrical Specifications and Command Protocols, JESD233 is available for download from the JEDEC website.

JESD233 XFMD is a removable, versatile memory solution intended for use in a wide range of applications that require an easy device exchange. Examples include IoT devices, automotive applications, notebook PCs, gaming consoles, video recording devices (drones, surveillance systems, etc.), Extended Reality (AR, VR, MR), and more.

To maximize connectivity between the host and the device, JESD233 XFMD leverages industry-leading standards from PCI-SIG and NVM Express, Inc. The PCI Express interface provides fundamental bus connectivity and NVM Express serves as the higher level protocol for accessing the non-volatile media as a low-latency logical storage device.

PC enthusiast memory and storage brand Neo Forza, detailed its plans to roll out DDR5 memory for desktop PCs. It also sheds light on some of the possible combinations of memory speed and density under development. Q4 2021 is when the company's first DDR5 memory modules will debut. These will be basic, bare-PCB modules with specs and speeds closest to JEDEC's. The company will start out with DDR5-4800 MHz modules, with densities of 8 GB, 16 GB, and 32 GB. The starting CAS latency on these things appears to be 40T. From what we gather, 16 GB will be the new single-rank standard memory size, 8 GB single-rank will be a low-cost option; while 32 GB could be commonly dual-rank, rarely single-. These modules will likely be co-branded with authorized DRAM IC providers.

Vanilla DDR5-4800 modules are only the beginning. Neo Forza plans to develop gaming-grade memory modules, complete with chunky heatspreaders, RGB LED illumination, and more importantly, higher clock speeds. The company expects that as DDR5 matures as a standard, speeds of DDR5-6400, DDR5-7200, and DDR5-8600, will become common for the enthusiast segment. The higher frequency modules will likely be 16 GB single-rank. As densities ramp up, 64 GB dual-rank modules will be possible, and Neo Forza expects to ship 128 GB (2x 64 GB) dual-channel kits, or scale out to 4-channel thru 8-channel HEDT platforms.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD209-5B, Low Power Double Data Rate 5 (LPDDR5). JESD209-5B includes both an update to the LPDDR5 standard that is focused on improving performance, power and flexibility, and a new LPDDR5X standard, which is an optional extension to LPDDR5.

Taken together, LPDDR5 and LPDDR5X are designed to significantly boost memory speed and efficiency for a variety of uses including mobile devices, such as 5G smartphones and artificial intelligence (AI) applications. Developed by JEDEC's JC-42.6 Subcommittee for Low Power Memories, JESD209-5B is available for download from the JEDEC website.

Western Digital Corp. today announced its second-generation UFS 3.1 storage solution for 5G smartphones. The new Western Digital iNAND MC EU551 delivers the high-performance storage consumers need to be able to use their phones for emerging applications like ultra-high-resolution cameras, AR/VR, gaming and 8K video.

IDC expects 5G smartphone shipments to account for more than 40% of global volume in 2021 and grow to 69% in 2025. As networks continue to expand available bandwidth and offer lower latency to enable new user experiences, Western Digital's iNAND solutions deliver the high-capacity, high-performance embedded storage needed to power these exciting new applications.

At the end of 2020, TEAMGROUP reached a cooperation agreement with top DRAM wafer manufacturers and started working on DDR5 technology. Since then, TEAMGROUP has dedicated to the research and development of DDR5 modules, collaborating with various major motherboard manufacturers to ensure that each R&D stage undergoes comprehensive testing and to deliver products of the highest quality that the industry has ever seen. TEAMGROUP is leading the industry today as we announce our official launch of the world's first DDR5 memory module for desktops, the TEAMGROUP ELITE U-DIMM DDR5, which is estimated to be available on major EC platforms for consumers worldwide by the end of June and the beginning of July.

The initial launch of TEAMGROUP ELITE DDR5 memory module will support 16GBx2 of capacity at a frequency of 4800 MHz, with a voltage of 1.1 V CL40-40-40-77, which complies with the standard specifications defined by the JEDEC association. Compared to the maximum 3200 MHz standard frequency in the DDR4 generation, the DDR5 is able to increase the speed to up to 50%. The low 1.1 V voltage is also more energy efficient than its previous generation; to ensure minimum noise interference for the memory module, the power management is transferred from the motherboard onto the memory with an additional power management IC (PMIC) for more effective system load control. The most incredible feature of ELITE DDR5 is doubling the 16 banks of DDR4 to those of 32 in DDR5 to improve the IC structure, providing double access availability. An on-die ECC (error correction code) included in the DRAM IC is also available for self-recovery of the DRAM unit, ensuring that DRAM systems with DDR5 can obtain higher levels of stability.

At its Flash Perspective Event today, Western Digital Corp. announced its new embedded flash platform for Universal Flash Storage (UFS) 3.1 to enable new applications in mobile, automotive, IoT, AR/VR, drones and other emerging segments that are reshaping the way we live, work and play.

In an increasingly mobile world of always on, always connected and always available, Western Digital's unique UFS 3.1 platform, based on the JEDEC-compliant UFS 3.1 specification, provides the speed, reliability and feature versatility that customers count on to build small, thin and lightweight solutions. Leveraging its vertical integration capability to optimize NAND, firmware, controller design, software and drivers, Western Digital can efficiently design purpose-built solutions for a variety of markets including mobile, IoT, automotive, and more - all leveraging a common UFS 3.1 architecture. Setting a new benchmark, this new platform is expected to deliver up to 90% improvement in sequential write performance, compared to its previous generation. This improvement will help realize 5G and Wi-Fi 6 download speed potential, delivering a better experience when consuming rich media files such as 8K video, as well as improved performance for applications such as burst mode photography.

The fifth iteration of DDR technology, called DDR5, is set to arrive later this year. Many makers of DDR4 technology are announcing their plans to switch to the new standard, and CORSAIR is no exception. Known as the maker of high-quality products, CORSAIR has today posted a blog post teasing company's upcoming DDR5 products, and what they will be bringing to the table. For starters, the company has posted data about DDR5 modules that run at 6400 MHz speed, which is assumed to be the speed of the CORSAIR DDR5 modules when they arrive. At such speed, the memory can achieve a bandwidth of 51 GB/s, which is almost double the 26 GB/s that DDR4-3200 MHz memory achieves.

Another point CORSAIR wrote about is the capacity of a single DIMM. With DDR4, the company has made DIMMs that are only up to 32 GB in capacity. However, with DDR5, CORSAIR plans to quadruple that and build a single DDR5 DIMM that has up to 128 GB of memory on it. Another big point was the power required to run the new technology. The DDR4 standard required 1.2 Volts for operation, while the JEDEC specification says that DDR5 needs just 1.1 Volts to run. This will result in a cooler operation of memory modules.