JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD220F: Universal Flash Storage 4.0. In addition, an update to the complementary JESD223E UFSHCI 4.0 standard, and a new companion standard for UFS version 3.1 and above, JESD231 File Based Optimization, have also been published. Developed for mobile applications and computing systems requiring high performance with low power consumption, UFS 4.0 introduces significant bandwidth and data protection improvements over the earlier version of the standard. All three standards are available for download from the JEDEC website.

The Australasian Gaming Expo (AGE), which has been postponed for two years by the worldwide pandemic, officially returns this year. Apacer, the world's leading industrial storage and memory brand, will return to participate in the AGE in Sydney, Australia from August 9th to 11th, to celebrate the return of the AGE and demonstrate its long-term research and development capabilities in the casino gaming application market. Ultra-high-performance industrial PCIe SSDs and DDR5 memory solutions, which meet the high-definition image and data processing requirements of new gaming machines, will be displayed on-site. Aiming at durability, data integrity and power stability, which are the most important aspects of gaming applications, Apacer's latest software, firmware and hardware technologies will also be shown, and they are expected to become key players in the global gaming market.

Extending device management technology to gaming industry applications, Apacer developed the CoreSnapshot 1-second backup and recovery technology, as well as the Transformed SSD module with Scheduled Power Management. CoreSnapshot can perform remote recovery when the SSD operational status is abnormal, reducing customer complaints caused by sudden game interruptions. The Transformed SSD module with Scheduled Power Management integrates the real-time scheduling management function of power cycling with a simple and effective management interface, reducing the amount of time that operators need to check, maintain and confirm the power status of a gaming machine and effectively saving operating costs.

YMTC today at the Flash Memory Summit (FMS) 2022 unveiled its X3-9070 TLC 3D NAND flash powered by Xtacking 3.0 architecture. Since its debut show at FMS 2018, YMTC's Xtacking technology has become a hallmark of the company's vision for innovation, and the approach to hybrid bonding has been widely recognized as one of the key enablers of the industry's future growth. Built out to be a common growth platform that drives value and innovation in the semiconductor ecosystem, YMTC's Xtacking 3.0 architecture opens up a world of opportunities for diversified applications in 5G, AloT, and beyond.

From 1.0 to 3.0, YMTC's Xtacking technology, a heterogeneous 3D integration architecture, has established a proven track record of success, as evidenced by a diverse portfolio of Xtacking NAND-based system solutions, including SATA III, PCIe Gen3 & Gen4 SSDs, as well as eMMC & UFS for mobile and embedded applications, garnering recognition from leading OEMs.

Winbond Electronics Corporation, a leading global supplier of semiconductor memory solutions, today announced that its new package 100BGA LPDDR4/4X had achieved the JEDEC JED209-4 standard to ensure energy conservation and carbon reduction. The LPDDR4/4X is now available in a space-saving 100BGA package measuring only 7.5X10mm2. The device is ideal for IoT applications requiring higher throughput in a small package to allow designers to reduce the PCB size for more compact IoT designs.

Winbond's LPDDR4/4X memory is available in density of 1Gb and 2Gb, supporting speeds of up to 4267 Mbps. It is available in both Single-Die-Package (SDP) with a 2Gb density and Dual-Die-Package (DDP) with a 4Gb density. The higher speed of LPDDR4 1CH x16 4267 Mbps offers improved performance over previous DDR4 x16 3200 Mbps devices, which is especially useful for consumer applications.

Rambus Inc., a premier chip and silicon IP provider making data faster and safer, today announced the expansion of its DDR5 memory interface chip portfolio with the addition of the Rambus SPD (Serial Presence Detect) Hub and Temperature Sensor, complementing the industry-leading Rambus Registering Clock Driver (RCD). DDR5 achieves greater memory bandwidth and capacity by employing a new module architecture with an expanded chipset. The SPD Hub and Temperature Sensors improve DDR5 Dual Inline Memory Module (DIMM) system management and thermal control to deliver higher performance within the desired power envelope for servers, desktops and laptops.

"The new performance levels of DDR5 memory place an increased premium on signal integrity and thermal management for server and client DIMMs," said Sean Fan, chief operating officer at Rambus. "With over 30 years of memory subsystem design experience, Rambus is ideally positioned to deliver DDR5 chipset solutions which enable breakthrough bandwidth and capacity for advanced computing systems."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun sampling the industry's first 16-gigabit (Gb) Graphics Double Data Rate 6 (GDDR6) DRAM featuring 24-gigabit-per-second (Gbps) processing speeds. Built on Samsung's third-generation 10-nanometer-class (1z) process using extreme ultraviolet (EUV) technology, the new memory is designed to significantly advance the graphics performance for next-generation graphics cards (Video Graphics Arrays), laptops and game consoles, as well as artificial intelligence-based applications and high-performance computing (HPC) systems.

"The explosion of data now being driven by AI and the metaverse is pushing the need for greater graphics capabilities that can process massive data sets simultaneously, at extremely high speeds," said Daniel Lee, executive vice president of the Memory Product Planning Team at Samsung Electronics. "With our industry-first 24 Gbps GDDR6 now sampling, we look forward to validating the graphics DRAM on next-generation GPU platforms to bring it to market in time to meet an onslaught of new demand."

Micron today announced commercial and industrial channel partner availability of Micron DDR5 server DRAM in support of industry qualification of next-generation Intel and AMD DDR5 server and workstation platforms. The move to DDR5 memory enables up to an 85% increase in system performance over DDR4 DRAM. Micron's new server DDR5 memory maximizes performance for AI, HPC and data-intensive applications that require more CPU compute capacity and higher memory bandwidth than DDR4 technology can support.

"As data continues to grow exponentially, the need to derive insights from that data is critical to business success," said Teresa Kelley, vice president and general manager of Micron's Commercial Products Group. "Data center operators need to maximize platform performance with advanced memory capabilities and processor advancements. Micron DDR5 server DRAM provides unparalleled bandwidth to manage even the most memory-intensive applications. Micron has been on the forefront of the industry's transition to DDR5 memory technology and is committed to empowering data center customers and channel partners in their server DDR5 DRAM qualification and readiness efforts."

It seems like DDR4 has ruled the roost forever. Finally, new motherboards and architectures have allowed memory to grow wings with the advent of DDR5. Improved clock speeds promise up to twice the bandwidth of DDR4, all with lower voltage for better efficiency. To further help with that last bit, DDR5 has on-board power management to reduce motherboard cost and complexity. This is particularly nice for all-new, powerful laptops and embedded devices.

Reliability has also been improved by the introduction of on-die error-correction technology. Memory availability is improved by splitting the internal 64-bit (72-bit with ECC) channel into two independent, 32-bit channels (40-bit with ECC) and the addition of the same bank refresh. Combined with other features, including those that allow for up to four times the module capacity with consumer DRAM, DDR5 ensures your multi-core CPU won't be memory starved. You can pack more memory than ever into your portable machine and take it on the go.

KIOXIA America, Inc. today announced sampling of the industry's first XFM DEVICE Ver. 1.0-compliant removable PCIe standard attached, NVMe storage device: the XFMEXPRESS XT2. With a new form factor and connector, the XFM DEVICE Ver. 1.0 standard delivers an unparalleled combination of features designed to revolutionize ultra-mobile PCs, IoT devices and a variety of embedded applications.

First introduced in August of 2019, and then presented as a proposal to the JEDEC Subcommittee for Electrical Specifications and Command Protocols, KIOXIA XFMEXPRESS XT2 is a new form factor for PCIe/NVMe specification devices. Featuring a powerful combination of small size, speed and serviceability, XFMEXPRESS technology was developed to enhance next-generation mobile and embedded applications. The XFMEXPRESS XT2 from KIOXIA is the first product to meet the specification of the new JEDEC standard.

Montage Technology, a leading data processing and interconnect IC design company, today announced it is now producing its 5600 MT/s 2nd-generation DDR5 RCD (RCD02) chip to support memory module vendors to enable the DDR5-5600 ecosystem. The new device is targeted for demanding applications such as next-generation servers, edge computing, and AI. The RCD02 is compliant with the latest JEDEC DDR5RCD02 specification. Compared with the 1st-generation RCD (RCD01), the RCD02 boosts DDR5 data rate by 16.67%. The RCD02 chip adopts dual-channel memory architecture, supports 1.1 V VDD and 1.0 V VDDIO voltages and several power saving modes, thus enabling a great reduction in power consumption.

In addition to providing industry-leading performance, power efficiency and reliability at the device level, Montage's DDR5 RCD02 solution supports CA, CS and DFE training modes, dual frequency, as well as other advanced features to facilitate the higher speed for the next generation DDR5 platform.
"An insatiable demand for bandwidth in everything from high-performance computing to AI training, gaming, is fueling the development of the next-generation memory," said Montage Technology's President, Stephen Tai. "Montage is delighted to be the first in the industry to successfully produce the DDR5 RCD02 chip to help meet the ever-increasing demand for memory bandwidth."

Montage Technology, a leading data processing and interconnect IC design company, today announced that it has delivered the world's first Compute Express Link (CXL ) Memory eXpander Controller (MXC). The device is designed to be used in Add-in Cards (AIC), Backplanes or EDSFF memory modules to enable significant scaling of memory capacity and bandwidth for data-intensive applications such as high-performance computing (HPC) and artificial intelligence (AI). The MXC is a Type 3 CXL DRAM memory controller. The MXC supports and is compliant with both DDR4 & DDR5 JEDEC standards. It is also designed to the CXL 2.0 specification and supports PCIe 5.0 specification speeds. The MXC provides high-bandwidth and low-latency interconnect between the CPU and the CXL-based devices, allowing them to share memory for higher performance, reduced software stack complexity, and lower data center TCO.

Montage Technology's President, Stephen Tai said, "CXL is a key technology that enables innovative ways to do memory expansion and pooling which will play an important role in next-generation server platforms. I'm very excited that Montage is the first company in the industry to successfully deliver the MXC chip, which signals we are making a critical step towards advancing the CXL interconnect technology to the memory market." CXL Consortium's President, Siamak Tavallaei said, "The CXL Consortium is excited to see continued CXL specification adoption to enable technologies and solutions such as the CXL DRAM Memory eXpander Controller." Montage Technology is working closely with industry-leading memory manufacturers to deliver advanced memory products based on the CXL MXC and help develop a robust memory ecosystem around CXL.

Samsung has announced the implementation of the latest JEDEC standard specification with the adoption of UFS (Universal Flash Storage) standard 4.0. The new standard offers a number of improvements over the previous UFS 3.1 specification related to either performance or power savings. The new standard increases speeds of up to 23.2 Gbps per lane, double that of the previous UFS 3.1 standard. Additionally, UFS 4.0 unlocks sequential read speeds as high as 6.0 MB/s per mA - a 46% improvement over the previous spec, promising decreased battery drain even as workload time is reduced.

Samsung's UFS 4.0 implementation will leverage the company's 7th Gen V-NAND alongside a proprietary controller, which should ultimately enable speeds of up to 4,200 MB/s. Sequential write speeds are nothing to scoff at either, promising up to 2,800 MB/s. The improved performance doesn't translate to increased package sizes, however, as UFS 4.0 will be distributed in compact packages with a maximum dimension of 11 mm x 13 mm x 1 mm for more effective space utilization and design convenience - with capacities reaching the 1 TB per package. Mass production is expected in 3Q2022. Samsung expects its new UFS 4.0-based products to deliver new experiences with increased data throughput of 5G smartphones, future automotive applications, and even AR and VR.

SMART Modular Technologies, Inc. ("SMART"), a division of SGH and a global leader in memory solutions, solid-state drive (SSD) and hybrid storage products announces the next generation of its DuraFlash ME2 family of SATA SSD products, which includes industry-standard M.2 2242, M.2 2280, mSATA, Slim SATA and 2.5" form factors. These SSDs are available in both industrial and commercial temperature grades and have versions that implement SMART's SafeDATA power-loss, data-protection technology for graceful handling of power fluctuations and sudden power loss events.

The new ME2 SSDs incorporate the latest generation 3D NAND-technology and SMART Modular's proprietary NVMSentry firmware to deliver high performance SSD products with endurance up to one drive writes per day (DWPD) for five years using JEDEC JESD219A enterprise endurance workload. The new NAND device offers better cost per bit over previous 64-layer and 96-layer NAND generations without sacrificing performance and reliability.

AMD's upcoming Socket AM5 Ryzen 7000-series "Raphael" desktop processors will ship with native support for DDR5-5200 memory speed, according to a marketing slide by memory maker Apacer (which also owns the overclocking memory brand ZADAK). The "Zen 4" based desktop processors will feature a dual-channel DDR5 (4 sub-channel) interface, just like the 12th Gen Core "Alder Lake," but with no backwards compatibility with DDR4.

AMD already stated that Ryzen 7000 processors have a design focus on memory overclocking capabilities, including AMD EXPO, a custom memory module SPD extension standard rivaling Intel XMP 3.0, which will come with fine-grained settings specific to the AMD memory controller architecture. Until now, AMD relied on A-XMP, a motherboard vendor-enabled feature based in the UEFI firmware setup program, which translates Intel XMP SPD profiles of memory modules into AMD-approximate settings.

TEAMGROUP, has announced today the upgrade of TEAMGROUP ELITE U-DIMM DDR5 Standard Memory in response to the evolution of future DDR5 memory specifications and development trends. Developed from TEAMGROUP's outstanding R&D capabilities and excellent product quality, the TEAMGROUP ELITE U-DIMM DDR5 Standard Memory complies with JEDEC standards and supports high-performance specifications of frequency 5600 MHz and 1.1 V voltage. The TEAMGROUP ELITE U-DIMM DDR5 Standard Memory has also been sent to major motherboard manufacturers for verification. As the world welcomes the advent of the DDR5 era, TEAMGROUP will continue to launch memory products with comprehensive compatibility and upgraded specifications.

TEAMGROUP is making an early play in the field of DDR5s. Last year, the company launched the TEAMGROUP ELITE U-DIMM DDR5 4800 MHz 1.1 V Standard Memory ahead of the industry and is now announcing an increased frequency from 4,800 MHz to 5,600 MHz with the same 1.1 V voltage, ensuring users can enjoy high-performance experiences while still conserving energy. The latest TEAMGROUP ELITE U-DIMM DDR5 Standard Memory will also be available in different storage capacities, including 2X8GB, 2X16GB, and 2X32GB, to deliver smooth multi-tasking and an outstanding product that is stable, high-performance, and energy-efficient.

Sabrent Rocket 8 GB, 16 GB, and 32 GB DDR4 SO-DIMM 3200 MHz Memory Module for laptop, Ultrabook, and mini-PC. Expand your horizons with Sabrent Rocket DDR4 memory. Your favorite SSD company wants to make sure the rest of your system feels responsive, too. We provide affordable, high-capacity DRAM options to make sure you never feel left behind. Our passion for memory matches your desire to exceed the limits of your imagination. Our design is tight and cool, making sure never to get in the way of your dreams.

Running out of memory? Providing up to 32 GB of memory per stick, Sabrent's Rocket DDR4 has all your needs covered. You're just a single upgrade away from a lag-free experience. Don't let your lack of memory slow you down - realize the potential to multi-task like never before. Our DRAM will improve your productivity and your gaming experience, all at the same time.

ATP Electronics, the global leader in specialized storage and memory solutions, has introduced its latest line of e.MMC devices built on 3D triple level cell (TLC) NAND. Using a new die package, the E750Pi/Pc and E650Si/Sc Series offer long-life performance, optimized power consumption and customizable configuration options. ATP's new E750Pi/Pc Series e.MMC offerings are built with 3D TLC NAND flash but are configured as pseudo SLC (pSLC) to offer endurance on par with SLC NAND, while E650Si/Sc Series in native TLC has near-MLC endurance.

The E750Pi and E650Si Series are industrial temperature-operable (-40°C to 85°C), making them ideal for deployment in scenarios with extreme thermal challenges and harsh environments, while E750Pc and E650Sc support -25°C to 85°C operating temperatures for applications with non-critical thermal requirements.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of the next version of its High Bandwidth Memory (HBM) DRAM standard: JESD238 HBM3, available for download from the JEDEC website. HBM3 is an innovative approach to raising the data processing rate used in applications where higher bandwidth, lower power consumption and capacity per area are essential to a solution's market success, including graphics processing and high-performance computing and servers.

AMD is preparing a round of updates to its desktop Radeon RX 6000 series in the wake of RTX 30-series models by NVIDIA, according to Greymon55, a reliable source with GPU rumors. The company could be leveraging faster 18 Gbps GDDR6 memory chips for the task. This wouldn't be the first RX 6000 series products with 18 Gbps memory, as the liquid-cooled MBA (made-by-AMD) RX 6900 XT that's exclusive to OEMs, already comes with 18 Gbps memory clocks.

Mass-production of JEDEC-standard GDDR6 memory chips with data-rates as high as 20 Gbps and 24 Gbps by Samsung is expected to get underway later this year. The company is already sampling these chips, and it's likely that they may feature in the next round of product-stack updates by AMD and NVIDIA. In the run up to its next-gen RDNA3 graphics architecture, AMD is rumored to be working on a refresh of RDNA2 on the new TSMC N6 (6 nm) foundry node that it already leverages for the entry-level "Navi 24" ASIC. This is expected to open up headroom to dial up engine clocks, and possibly support faster memory. As for this latest refresh with 18 Gbps memory, if AMD's naming convention for its mobile RX 6850M is anything to go by, the new SKUs could feature a similar "xx50" model numbering.

Since 2020, data centers have seen additional development opportunities driven by new infrastructure. For this reason, DDRs have been developed to become faster and more efficient. On July 14, 2020, JEDEC released the DDR5 SDRAM standard, marking the industry-wide transition to DDR5 server dual in-line memory modules (DIMMs). In China, mainstream manufacturers are gradually focusing on DDR5, striving to promote its widespread commercialization. DDR5 brings with it a series of crucial improvements to help empower next-gen servers with better performance and lower power consumption.

With 22 years of experience in the storage industry, Longsys is constantly accumulating industrial experience while remaining centered on R&D technology. As the first company in China to do so, it has made multiple DDR5 test data items publicly available. FORESEE, the industrial storage brand of Longsys, has recently launched commercial DDR5 U-DIMM, available in 16 GB and 32 GB options.

Apacer's consumer and gaming DDR5 memory modules are finally available! The DDR5-4800 delivers 16 GB of DRAM at 4800 MHz and draws just 1.1 V. That leaves DDR4 modules far behind in the rear-view mirror. Performance, capacity, stability and power efficiency are all taken to the next level. In addition to the standard DDR5 memory module, Apacer is launching a NOX DDR5 gaming memory module. This will provide gamers with extremely stable overclocking capabilities with a single click. Power consumption management is also upgraded in DDR5.

Apacer's DDR5-4800 modules are compliant with the JEDEC standard. And their operating frequency of 4800 MHz is a 50% increase in bandwidth compared to the standard DDR4 upper frequency limit of 3200 MHz.

Samsung has started sampling high-speed 24 Gbps-rated GDDR6 memory chips. Just to be clear, these are standard GDDR6 chips built to JEDEC-specifications, and not GDDR6X, a derivative standard co-developed by NVIDIA and Micron leveraging PAM4 signaling. The 24 Gbps chips by Samsung can be used by both NVIDIA and AMD, if their GPU designs can handle the data-rates. The specific part number for the chip is "K4ZAF325BC-SC24." This chip has a density of 16 Gb (2 GB), which means 8 of these make up 16 GB across a 256-bit wide memory bus, and 12 of these make 24 GB across a 384-bit bus.

At 24 Gbps, these chips offer 50% more bandwidth than 16 Gbps, and 71% more than 14 Gbps. A hypothetical 6 nm refresh of the "Navi 21" paired with these chips, would hence have 768 GB/s of memory bandwidth on top of its Infinity Cache bandwidth, compared to 512 GB/s on the current Radeon RX 6800 XT. Since the chip is sampling, it's likely that both AMD and NVIDIA have their hands on it. There's no word on when the chip hits mass-production, but this could definitely happen within 2022.

KINGMAX, has introduced the latest DDR5 4800 MHz 16 GB desktop memory. Fully compatible with Intel's 12th-generation Alder Lake and Z690 platform, it has secured the QVL certification of a good number of main stream motherboard manufacturers, thereby attesting to its platform compatibility essential for this new era for PCs already here.

Compared with its predecessors, DDR5 4800 MHz memory stands out as an utter upgrade in overall performance. In terms of speed, DDR5 starts with a base frequency of 4800 MHz and its bandwidth of 38.4 MB/s is at least 1.5 times faster than the maximum of 25.6 MB/s offered by its DDR4 3200 MHz peers. Coupled with dual sub-channels (32-bit) that run independently, data processing becomes substantially more efficient as the memory controller enjoys a much lower data access latency.

Micron Technology, Inc. announced today that MediaTek Inc. has validated Micron's low-power double data rate 5X (LPDDR5X) DRAM for MediaTek's new Dimensity 9000 5G flagship chipset for smartphones. Micron is the first semiconductor company to sample and validate this fastest, most advanced mobile memory in the industry and has shipped the first batch of samples of LPDDR5X built on its first-to-market 1α (1-alpha) node. Designed for high-end and flagship smartphones, Micron's LPDDR5X allows the smartphone ecosystem to unlock the next wave of data-intensive applications powered by artificial intelligence (AI) and 5G innovation.

The market delivery and validation of Micron's industry-leading 1α-based LPDDR5X solidifies its product innovation and leadership in the mobile ecosystem, following industry-first launches for LPDDR5, 1α-based LPDDR4X, 176-layer NAND-based UFS 3.1 and uMCP5 solutions. This most recent milestone follows quickly on the heels of JEDEC's July release of the LPDDR5X extension to LPDDR5, created to offer higher bandwidth and memory speed for enhanced 5G communication and performance while still conserving power. Micron has validated samples supporting data rates up to 7.5 Gb/s, with samples supporting data rates up to 8.533 Gb/s to follow. Peak LPDDR5X speeds of 8.533 Gb/s deliver up to 33% faster performance than previous-generation LPDDR5.

"Innovating cutting-edge smartphone experiences requires memory technology built to address the massive bandwidth demands of the mobile market," said Raj Talluri, senior vice president and general manager of Micron's Mobile Business Unit. "Our collaboration with MediaTek to validate the world's most advanced mobile memory empowers the ecosystem to deliver the next wave of rich mobile features enhanced by 5G and AI."

During Samsung's Tech Day 2021, the company presented some interesting insights about the future of system memory technologies and how it plans to execute its production. Starting with the latest DDR5 standard, the company intends to follow JEDEC documents and offer some overclocking modules that surpass the specification advised by JEDEC. While the DDR5 standard specifies memory modules with 6,400 MT/s, Samsung will develop modules capable of overclocking up to 8,400 MT/s. These are not yet confirmed as they are still in the development phase. However, we can expect to see them in the later life of DDR5 memory.

The company also talked about the DDR6 standard, which is supposedly twice as fast as DDR5. The new DDR6 standard is still in early development, and all we know so far is that the number of memory channels per module is seeing a twofold increase over DDR5 to four channels. The number of memory banks also increases to 64. In addition to DDR6 for desktop and server use cases, the company is also working on Low Power DDR6 (LPDDR6) for mobile applications. While the company's LPDDR5 memory goes into volume production using the 1a-nm process at the beginning of 2022, the LPDDR6 is still in early development. The base speed for DDR6 modules will allegedly arrive at 12,800 MT/s, while overclocking modules will join the party at up to 17,000 MT/s. Mobile-oriented LPDDR6 version is also supposed to come with up to 17,000 MT/s speeds.