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Samsung Reveals GDDR7 Memory Uses PAM3 Signalling to Achieve 36 Gbps Data-Rate

The next-generation GDDR7 memory standard is shaping up nicely, to double bandwidth and density over the current GDDR6. In a company presentation detailing upcoming memory technologies, Samsung revealed that GDDR7 uses PAM3 signalling. While ones and zeroes are stored in DRAM memory cells, it is transmitted between devices (such as the DRAM chip and the GPU) in electrical waveforms known as "signals." Ones and zeroes are interpreted by patterns in the signal waveform.

Conventional GDDR6 memory uses NRZ (non-return to zero) or PAM2 signalling to achieve data-rates starting from 14 Gbps, with 24 Gbps expected to be the fastest production GDDR6 memory speed on offer, however some of the faster GDDR6 speeds such as 18 Gbps, 20 Gbps, and 22 Gbps couldn't hit production soon enough for the development phase of the GeForce RTX 30-series "Ampere" GPU, and so NVIDIA and Micron Technology co-developed the GDDR6X standard leveraging PAM4 signalling, to offer speeds ranging between 18 Gbps to 23 Gbps (or higher) several quarters ahead of this faster JEDEC-standard GDDR6.

Samsung Develops GDDR6W Memory Standard: Double the Bandwidth and Density of GDDR6 Through Packaging Innovations

As advanced graphics and display technologies develop, they are blurring the lines between metaverse and our everyday experience. Much of this important shift is being made possible by the advancement of memory solutions designed for graphics products. One of the biggest challenges for improving virtual reality is taking the complexities of real-world objects and environments and recreating them in a virtual space. Doing so requires massive memory and increased computing power. At the same time, the benefits of creating more true-to-life metaverse will be far reaching, including real-life simulations of complicated scenarios and more, sparking innovation across a number of industries.

This is the central idea behind one of the most popular concepts in virtual reality: digital twin. A digital twin is a virtual representation of an object or space. Updated in real-time in accordance with the actual environment, a digital twin spans the lifecycle of its source and uses simulation, machine learning and reasoning to help decision-making. While until recently this was not feasible proposition due to limitations on data processing and transference, digital twins are now gaining traction thanks to availability of high bandwidth technologies.

SK hynix Announces the World's first 1anm 8.5 Gbps LPDDR5x DRAM with HKMG Process

SK hynix has developed LPDDR5X (Low Power Double Data Rate 5X), the world's first-ever mobile DRAM with an integrated HKMG (High-K Metal Gate) process, which was just recently introduced to the market. The LPDDR5X boasts the industry's highest energy-efficiency as SK hynix succeeded in reducing power consumption by 25% compared to the previous generation and operates in the ultra-low voltage range of 1.01 V to 1.12 V set by the JEDEC (Joint Electron Device Engineering Council).
For the LPDDR, which is also called a mobile DRAM, having a low power consumption is its greatest asset, just as its standard name—LP (Low Power)—suggests. As power is limited in mobile devices, it's necessary to reduce power consumption as much as possible to extend the usage time.

This is why lowering power consumption is just as important as increasing operating speed. LPDDR5X was the first among mobile DRAMs to integrate the HKMG process and see improved performance and a reduction in power consumption, essentially killing two birds with one stone. As the power consumption of DRAM gets lowered by LPDDR5X, mobile devices can be used for a longer time with a single charge. The reduction in power consumption of such products can subsequently lead to a reduction in the power used by consumers, which is in line with the value of SK hynix's ESG-centered business management.

Micron Ships World's Most Advanced DRAM Technology With 1-Beta Node

Micron Technology, Inc., announced today that it is shipping qualification samples of its 1β (1-beta) DRAM technology to select smartphone manufacturers and chipset partners and has achieved mass production readiness with the world's most advanced DRAM technology node. The company is debuting its next generation of process technology on its low-power double data rate 5X (LPDDR5X) mobile memory, delivering top speed grades of 8.5 gigabits (Gb) per second. The node delivers significant gains across performance, bit density and power efficiency that will have sweeping market benefits. Beyond mobile, 1β delivers the low-latency, low-power, high-performance DRAM that is essential to support highly responsive applications, real-time services, personalization and contextualization of experiences, from intelligent vehicles to data centers.

The world's most advanced DRAM process node, 1β represents an advancement of the company's market leadership cemented with the volume shipment of 1α (1-alpha) in 2021. The node delivers around a 15% power efficiency improvement and more than a 35% bit density improvement with a 16Gb per die capacity. "The launch of our 1-beta DRAM signals yet another leap forward for memory innovation, brought to life by our proprietary multi-patterning lithography in combination with leading-edge process technology and advanced materials capabilities," said Scott DeBoer, executive vice president of technology and products at Micron. "In delivering the world's most advanced DRAM technology with more bits per memory wafer than ever before, this node lays the foundation to usher in a new generation of data-rich, intelligent and energy-efficient technologies from the edge to the cloud."

ASUS Announces More Intel Z790 ROG, TUF Gaming and ProArt Motherboards

ASUS today announced the availability of new Intel Z790 motherboards, including the ROG Maximus Z790 Apex, TUF Gaming Z790-PLUS WiFi and ProArt Z790-Creator WiFi - all of which provide DDR5 memory module support and PCIe 5.0 slots for video cards and storage.ASUS Z790 motherboards offer tremendous value to anyone assembling an Intel 13th Gen machine that includes AEMP II, AI Overclocking, AI Cooling II, PCIe 5.0 M.2 slots, Thunderbolt 4, WiFi 6E, Quick Charge 4+ technology and comprehensive connectivity. Overall, new ASUS Z790 motherboards are ideal solutions for any user who wants to build a next-gen machine or upgrade their existing system.

First up is the ROG Maximus Z790 Apex. The ultimate option for memory overclocking enthusiasts, this motherboard boasts a cutting-edge feature set. Then, for creative professionals of all kinds, ASUS offers the ProArt Z790-Creator WiFi. This motherboard offers premium connectivity and bespoke style, and it's fully ready for next-gen graphics cards and ultra-fast PCIe 5.0 storage. Finally, ASUS is bolstering its TUF Gaming lineup with the TUF Gaming Z790-Plus WiFi, which brings DDR5 support to the family.

SK Hynix Shows Off Odd-sized 48GB and 96GB DDR5 RDIMMs at InnovatiON

SK Hynix at the 2022 Intel InnovatiON event, showed off some unconventional server memory capacities. The company presented DDR5 RDIMMs in 48 GB and 96 GB densities, besides the usual 32 GB, 64 GB, and 128 GB ones. These are being offered in data-rates of DDR5-5600 and DDR5-6400, which indicates that DDR5-5600 (JEDEC-standard) could be the standard memory speed supported by Xeon Scalable "Sapphire Rapids" processors, with some (or all) models also supporting DDR5-6400. These are not XMP or overclocking SPDs, but JEDEC-standard ones that the processors can automatically train to. The flagship product among SK Hynix's booth would have to be a mammoth 256 GB DDR5-5600 RDIMM, which should enable servers with up to 4 TB of memory per socket (@2 RDIMMs per channel).

Montage Technology Delivers World's First Gen1 DDR5 Clock Driver Engineering Samples

Montage Technology, a leading data processing and interconnect IC design company, today announced that it is delivering the world's first Gen1 DDR5 Clock Driver (CKD or DDR5CK01) samples to the top DRAM memory vendors for their development of memory modules used in new-generation desktop and notebook computers.

For a long time, the clock driver functions have been integrated onto the register clock driver (RCD) device, which is used in the server platforms, rather than the PC computers. With the boost of the DDR5 data rate, the frequency of the clock signal becomes higher and higher, and the signal integrity issue of the clock becomes more and more challenging. As the DDR5 data rate reaches 6400MT/s and above, the memory modules such as UDIMMs and SODIMMs used in desktop and notebook computers, will need an on-DIMM clock driver to buffer and re-drive the clock signal of the memory modules, to meet the signal integrity and reliability requirement of the high-speed clock signal.

KIOXIA Strengthens Lineup of Embedded Flash Memory Products for Consumer Applications

KIOXIA America, Inc. today announced that it has begun sampling the latest generation of its JEDEC e-MMC Ver. 5.1-compliant embedded flash memory products for consumer applications. The new products are available in capacities of 64 and 128 gigabytes (GB) and integrate the company's BiCS FLASH 3D flash memory and a controller in a single package.

Demand for mid-range capacities in consumer products such as tablets and IoT devices continues to grow, and though the market continues to shift to UFS, there are cases where e-MMC may still be used. The new KIOXIA e-MMC devices expand the available options. A leading provider of flash memory and storage for consumer applications and mobile devices, KIOXIA has been supporting e-MMC since 2007 and was the first supplier to introduce the higher performance follow-on solution to e-MMC, UFS, in early 2013. Today, the broad KIOXIA lineup of e-MMC and UFS solutions provides support across a wide range of densities (4 GB-1 TB).

Intel 700-series Chipset Motherboards Feature Higher Memory OC Headroom Complementing That of "Raptor Lake"

Intel 700-series chipset motherboards could come with improved memory overclocking capabilities, suggest an alleged leaked specs-sheet of an MSI Intel Z790 chipset motherboard. As the pioneering platform for DDR5, Intel 600-series chipset motherboards, particularly those based on the Z690, typically marketed DDR5 memory overclock speeds of around DDR5-6000 or DDR5-6200 in their specs sheets, as the then-expensive DDR5 memory kits started at JEDEC-spec speeds of DDR5-4800 in the entry-level, with performance-segment kits around the DDR5-6000 mark.

The unnamed MSI Z790 chipset motherboard supports DDR5 overclocked frequencies of over DDR5-6800 at 1DPC (one DIMM per channel) with single-rank modules; over DDR5-6400 with 1DPC + dual-rank modules; over DDR5-6400 with 2DPC + single-rank modules; and over DDR5-5600 with 2DPC + dual-rank. Earlier reports suggested that Intel is "discouraging" motherboard vendors from coming up with 700-series motherboards that feature DDR4 memory slots, but this doesn't mean there won't be any. MSI has an Intel Z790 motherboard with DDR4 slots in the works, and it's capable of overclocks of up to DDR4-5000 in the most optimal configuration, and DDR4-4000 in the least optimal one.

CXL Consortium and JEDEC Sign MOU Agreement to Advance DRAM and Persistent Memory Technology

JEDEC Solid State Technology Association and Compute Express Link (CXL) Consortium today announced the signing of a Memorandum of Understanding (MOU) to formalize collaboration between the two organizations. The agreement outlines the formation of a joint work group to provide a forum that facilitates communication and sharing of information, requirements, recommendations and requests with the intent that this exchange of information will help standards developed by each organization augment one another.

"The MOU between JEDEC and CXL Consortium will establish a framework for ongoing communication to align future efforts between the two organizations. The joint work group will collaborate on useful solutions for form factors, management, security, and DRAM and other memory technologies," said Siamak Tavallaei, CXL Consortium President.

JEDEC Updates Universal Flash Storage (UFS) and Supporting Memory Interface Standard

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD220F: Universal Flash Storage 4.0. In addition, an update to the complementary JESD223E UFSHCI 4.0 standard, and a new companion standard for UFS version 3.1 and above, JESD231 File Based Optimization, have also been published. Developed for mobile applications and computing systems requiring high performance with low power consumption, UFS 4.0 introduces significant bandwidth and data protection improvements over the earlier version of the standard. All three standards are available for download from the JEDEC website.

Apacer Returns to the AGE; Showcasing new Transformed SSDs with Scheduled Power Management

The Australasian Gaming Expo (AGE), which has been postponed for two years by the worldwide pandemic, officially returns this year. Apacer, the world's leading industrial storage and memory brand, will return to participate in the AGE in Sydney, Australia from August 9th to 11th, to celebrate the return of the AGE and demonstrate its long-term research and development capabilities in the casino gaming application market. Ultra-high-performance industrial PCIe SSDs and DDR5 memory solutions, which meet the high-definition image and data processing requirements of new gaming machines, will be displayed on-site. Aiming at durability, data integrity and power stability, which are the most important aspects of gaming applications, Apacer's latest software, firmware and hardware technologies will also be shown, and they are expected to become key players in the global gaming market.

Extending device management technology to gaming industry applications, Apacer developed the CoreSnapshot 1-second backup and recovery technology, as well as the Transformed SSD module with Scheduled Power Management. CoreSnapshot can perform remote recovery when the SSD operational status is abnormal, reducing customer complaints caused by sudden game interruptions. The Transformed SSD module with Scheduled Power Management integrates the real-time scheduling management function of power cycling with a simple and effective management interface, reducing the amount of time that operators need to check, maintain and confirm the power status of a gaming machine and effectively saving operating costs.

YMTC Introduces X3-9070 3D NAND Flash Powered by Innovative Xtacking 3.0 Architecture

YMTC today at the Flash Memory Summit (FMS) 2022 unveiled its X3-9070 TLC 3D NAND flash powered by Xtacking 3.0 architecture. Since its debut show at FMS 2018, YMTC's Xtacking technology has become a hallmark of the company's vision for innovation, and the approach to hybrid bonding has been widely recognized as one of the key enablers of the industry's future growth. Built out to be a common growth platform that drives value and innovation in the semiconductor ecosystem, YMTC's Xtacking 3.0 architecture opens up a world of opportunities for diversified applications in 5G, AloT, and beyond.

From 1.0 to 3.0, YMTC's Xtacking technology, a heterogeneous 3D integration architecture, has established a proven track record of success, as evidenced by a diverse portfolio of Xtacking NAND-based system solutions, including SATA III, PCIe Gen3 & Gen4 SSDs, as well as eMMC & UFS for mobile and embedded applications, garnering recognition from leading OEMs.

Winbond's LPDDR4/4X 100BGA achieves JEDEC standard for improved energy conservation and carbon reduction in a smaller package size

Winbond Electronics Corporation, a leading global supplier of semiconductor memory solutions, today announced that its new package 100BGA LPDDR4/4X had achieved the JEDEC JED209-4 standard to ensure energy conservation and carbon reduction. The LPDDR4/4X is now available in a space-saving 100BGA package measuring only 7.5X10mm2. The device is ideal for IoT applications requiring higher throughput in a small package to allow designers to reduce the PCB size for more compact IoT designs.

Winbond's LPDDR4/4X memory is available in density of 1Gb and 2Gb, supporting speeds of up to 4267 Mbps. It is available in both Single-Die-Package (SDP) with a 2Gb density and Dual-Die-Package (DDP) with a 4Gb density. The higher speed of LPDDR4 1CH x16 4267 Mbps offers improved performance over previous DDR4 x16 3200 Mbps devices, which is especially useful for consumer applications.

Rambus Expands Portfolio of DDR5 Memory Interface Chips for Data Centers and PCs

Rambus Inc., a premier chip and silicon IP provider making data faster and safer, today announced the expansion of its DDR5 memory interface chip portfolio with the addition of the Rambus SPD (Serial Presence Detect) Hub and Temperature Sensor, complementing the industry-leading Rambus Registering Clock Driver (RCD). DDR5 achieves greater memory bandwidth and capacity by employing a new module architecture with an expanded chipset. The SPD Hub and Temperature Sensors improve DDR5 Dual Inline Memory Module (DIMM) system management and thermal control to deliver higher performance within the desired power envelope for servers, desktops and laptops.

"The new performance levels of DDR5 memory place an increased premium on signal integrity and thermal management for server and client DIMMs," said Sean Fan, chief operating officer at Rambus. "With over 30 years of memory subsystem design experience, Rambus is ideally positioned to deliver DDR5 chipset solutions which enable breakthrough bandwidth and capacity for advanced computing systems."

Samsung Launches Industry's First 24Gbps GDDR6 Memory

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun sampling the industry's first 16-gigabit (Gb) Graphics Double Data Rate 6 (GDDR6) DRAM featuring 24-gigabit-per-second (Gbps) processing speeds. Built on Samsung's third-generation 10-nanometer-class (1z) process using extreme ultraviolet (EUV) technology, the new memory is designed to significantly advance the graphics performance for next-generation graphics cards (Video Graphics Arrays), laptops and game consoles, as well as artificial intelligence-based applications and high-performance computing (HPC) systems.

"The explosion of data now being driven by AI and the metaverse is pushing the need for greater graphics capabilities that can process massive data sets simultaneously, at extremely high speeds," said Daniel Lee, executive vice president of the Memory Product Planning Team at Samsung Electronics. "With our industry-first 24 Gbps GDDR6 now sampling, we look forward to validating the graphics DRAM on next-generation GPU platforms to bring it to market in time to meet an onslaught of new demand."

Micron Launches Industrial DDR5 Server DRAM

Micron today announced commercial and industrial channel partner availability of Micron DDR5 server DRAM in support of industry qualification of next-generation Intel and AMD DDR5 server and workstation platforms. The move to DDR5 memory enables up to an 85% increase in system performance over DDR4 DRAM. Micron's new server DDR5 memory maximizes performance for AI, HPC and data-intensive applications that require more CPU compute capacity and higher memory bandwidth than DDR4 technology can support.

"As data continues to grow exponentially, the need to derive insights from that data is critical to business success," said Teresa Kelley, vice president and general manager of Micron's Commercial Products Group. "Data center operators need to maximize platform performance with advanced memory capabilities and processor advancements. Micron DDR5 server DRAM provides unparalleled bandwidth to manage even the most memory-intensive applications. Micron has been on the forefront of the industry's transition to DDR5 memory technology and is committed to empowering data center customers and channel partners in their server DDR5 DRAM qualification and readiness efforts."

Sabrent announces High-Performance DDR5-4800 SO-DIMM CL40 Memory Modules

It seems like DDR4 has ruled the roost forever. Finally, new motherboards and architectures have allowed memory to grow wings with the advent of DDR5. Improved clock speeds promise up to twice the bandwidth of DDR4, all with lower voltage for better efficiency. To further help with that last bit, DDR5 has on-board power management to reduce motherboard cost and complexity. This is particularly nice for all-new, powerful laptops and embedded devices.

Reliability has also been improved by the introduction of on-die error-correction technology. Memory availability is improved by splitting the internal 64-bit (72-bit with ECC) channel into two independent, 32-bit channels (40-bit with ECC) and the addition of the same bank refresh. Combined with other features, including those that allow for up to four times the module capacity with consumer DRAM, DDR5 ensures your multi-core CPU won't be memory starved. You can pack more memory than ever into your portable machine and take it on the go.

KIOXIA First to Introduce JEDEC XFM Removable Storage Device Compliant with Ver.1.0 PCIe/NVMe Spec

KIOXIA America, Inc. today announced sampling of the industry's first XFM DEVICE Ver. 1.0-compliant removable PCIe standard attached, NVMe storage device: the XFMEXPRESS XT2. With a new form factor and connector, the XFM DEVICE Ver. 1.0 standard delivers an unparalleled combination of features designed to revolutionize ultra-mobile PCs, IoT devices and a variety of embedded applications.

First introduced in August of 2019, and then presented as a proposal to the JEDEC Subcommittee for Electrical Specifications and Command Protocols, KIOXIA XFMEXPRESS XT2 is a new form factor for PCIe/NVMe specification devices. Featuring a powerful combination of small size, speed and serviceability, XFMEXPRESS technology was developed to enhance next-generation mobile and embedded applications. The XFMEXPRESS XT2 from KIOXIA is the first product to meet the specification of the new JEDEC standard.

Montage Technology Starts Producing 2nd-Gen DDR5 RCDs

Montage Technology, a leading data processing and interconnect IC design company, today announced it is now producing its 5600 MT/s 2nd-generation DDR5 RCD (RCD02) chip to support memory module vendors to enable the DDR5-5600 ecosystem. The new device is targeted for demanding applications such as next-generation servers, edge computing, and AI. The RCD02 is compliant with the latest JEDEC DDR5RCD02 specification. Compared with the 1st-generation RCD (RCD01), the RCD02 boosts DDR5 data rate by 16.67%. The RCD02 chip adopts dual-channel memory architecture, supports 1.1 V VDD and 1.0 V VDDIO voltages and several power saving modes, thus enabling a great reduction in power consumption.

In addition to providing industry-leading performance, power efficiency and reliability at the device level, Montage's DDR5 RCD02 solution supports CA, CS and DFE training modes, dual frequency, as well as other advanced features to facilitate the higher speed for the next generation DDR5 platform.
"An insatiable demand for bandwidth in everything from high-performance computing to AI training, gaming, is fueling the development of the next-generation memory," said Montage Technology's President, Stephen Tai. "Montage is delighted to be the first in the industry to successfully produce the DDR5 RCD02 chip to help meet the ever-increasing demand for memory bandwidth."

Montage Technology Delivers the World's First CXL Memory eXpander Controller

Montage Technology, a leading data processing and interconnect IC design company, today announced that it has delivered the world's first Compute Express Link (CXL ) Memory eXpander Controller (MXC). The device is designed to be used in Add-in Cards (AIC), Backplanes or EDSFF memory modules to enable significant scaling of memory capacity and bandwidth for data-intensive applications such as high-performance computing (HPC) and artificial intelligence (AI). The MXC is a Type 3 CXL DRAM memory controller. The MXC supports and is compliant with both DDR4 & DDR5 JEDEC standards. It is also designed to the CXL 2.0 specification and supports PCIe 5.0 specification speeds. The MXC provides high-bandwidth and low-latency interconnect between the CPU and the CXL-based devices, allowing them to share memory for higher performance, reduced software stack complexity, and lower data center TCO.

Montage Technology's President, Stephen Tai said, "CXL is a key technology that enables innovative ways to do memory expansion and pooling which will play an important role in next-generation server platforms. I'm very excited that Montage is the first company in the industry to successfully deliver the MXC chip, which signals we are making a critical step towards advancing the CXL interconnect technology to the memory market." CXL Consortium's President, Siamak Tavallaei said, "The CXL Consortium is excited to see continued CXL specification adoption to enable technologies and solutions such as the CXL DRAM Memory eXpander Controller." Montage Technology is working closely with industry-leading memory manufacturers to deliver advanced memory products based on the CXL MXC and help develop a robust memory ecosystem around CXL.

Samsung Announces UFS 4.0 to Deliver up to 4,200 MB/s Read, 2,800 MB/s Write Speeds for Memory Cards

Samsung has announced the implementation of the latest JEDEC standard specification with the adoption of UFS (Universal Flash Storage) standard 4.0. The new standard offers a number of improvements over the previous UFS 3.1 specification related to either performance or power savings. The new standard increases speeds of up to 23.2 Gbps per lane, double that of the previous UFS 3.1 standard. Additionally, UFS 4.0 unlocks sequential read speeds as high as 6.0 MB/s per mA - a 46% improvement over the previous spec, promising decreased battery drain even as workload time is reduced.

Samsung's UFS 4.0 implementation will leverage the company's 7th Gen V-NAND alongside a proprietary controller, which should ultimately enable speeds of up to 4,200 MB/s. Sequential write speeds are nothing to scoff at either, promising up to 2,800 MB/s. The improved performance doesn't translate to increased package sizes, however, as UFS 4.0 will be distributed in compact packages with a maximum dimension of 11 mm x 13 mm x 1 mm for more effective space utilization and design convenience - with capacities reaching the 1 TB per package. Mass production is expected in 3Q2022. Samsung expects its new UFS 4.0-based products to deliver new experiences with increased data throughput of 5G smartphones, future automotive applications, and even AR and VR.

SMART Modular Technologies Announces Next Generation of ME2 Flash

SMART Modular Technologies, Inc. ("SMART"), a division of SGH and a global leader in memory solutions, solid-state drive (SSD) and hybrid storage products announces the next generation of its DuraFlash ME2 family of SATA SSD products, which includes industry-standard M.2 2242, M.2 2280, mSATA, Slim SATA and 2.5" form factors. These SSDs are available in both industrial and commercial temperature grades and have versions that implement SMART's SafeDATA power-loss, data-protection technology for graceful handling of power fluctuations and sudden power loss events.

The new ME2 SSDs incorporate the latest generation 3D NAND-technology and SMART Modular's proprietary NVMSentry firmware to deliver high performance SSD products with endurance up to one drive writes per day (DWPD) for five years using JEDEC JESD219A enterprise endurance workload. The new NAND device offers better cost per bit over previous 64-layer and 96-layer NAND generations without sacrificing performance and reliability.

AMD Ryzen 7000 "Raphael" to Ship with DDR5-5200 Native Support

AMD's upcoming Socket AM5 Ryzen 7000-series "Raphael" desktop processors will ship with native support for DDR5-5200 memory speed, according to a marketing slide by memory maker Apacer (which also owns the overclocking memory brand ZADAK). The "Zen 4" based desktop processors will feature a dual-channel DDR5 (4 sub-channel) interface, just like the 12th Gen Core "Alder Lake," but with no backwards compatibility with DDR4.

AMD already stated that Ryzen 7000 processors have a design focus on memory overclocking capabilities, including AMD EXPO, a custom memory module SPD extension standard rivaling Intel XMP 3.0, which will come with fine-grained settings specific to the AMD memory controller architecture. Until now, AMD relied on A-XMP, a motherboard vendor-enabled feature based in the UEFI firmware setup program, which translates Intel XMP SPD profiles of memory modules into AMD-approximate settings.

TEAMGROUP Announces ELITE U-DIMM DDR5 Standard Memory with 5600 MHz Speed

TEAMGROUP, has announced today the upgrade of TEAMGROUP ELITE U-DIMM DDR5 Standard Memory in response to the evolution of future DDR5 memory specifications and development trends. Developed from TEAMGROUP's outstanding R&D capabilities and excellent product quality, the TEAMGROUP ELITE U-DIMM DDR5 Standard Memory complies with JEDEC standards and supports high-performance specifications of frequency 5600 MHz and 1.1 V voltage. The TEAMGROUP ELITE U-DIMM DDR5 Standard Memory has also been sent to major motherboard manufacturers for verification. As the world welcomes the advent of the DDR5 era, TEAMGROUP will continue to launch memory products with comprehensive compatibility and upgraded specifications.

TEAMGROUP is making an early play in the field of DDR5s. Last year, the company launched the TEAMGROUP ELITE U-DIMM DDR5 4800 MHz 1.1 V Standard Memory ahead of the industry and is now announcing an increased frequency from 4,800 MHz to 5,600 MHz with the same 1.1 V voltage, ensuring users can enjoy high-performance experiences while still conserving energy. The latest TEAMGROUP ELITE U-DIMM DDR5 Standard Memory will also be available in different storage capacities, including 2X8GB, 2X16GB, and 2X32GB, to deliver smooth multi-tasking and an outstanding product that is stable, high-performance, and energy-efficient.
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